Light-emitting device package and application thereof

Abstract

A light-emitting device package comprises: a printed circuit board having a front surface and a rear surface; at least one light-emitting device provided on the front surface to emit light in the direction in which the front surface faces; and a molding layer provided on the printed circuit board to surround the light-emitting device, wherein the light-emitting device comprises: a light-emitting structure provided on the printed circuit board; a substrate provided on the light-emitting structure; and a plurality of bump electrodes disposed between the light-emitting structure and the printed circuit board. The molding layer may cover the upper surface of the substrate, and a fine concave-convex portion may be provided on the surface exposed to the outside of the molding layer.

Description

Light-emitting device packages and their applications

[0001] The present invention relates to a light emitting device package and an application using the same.

[0002] Recently, various devices using light-emitting diodes (LEDs) are being developed. Devices that use LEDs as light sources include general lighting and display devices. These devices are created by forming structures of individually grown red (R), green (G), and blue (B) light-emitting diodes (LEDs) on a final substrate.

[0003] In order to apply these light-emitting diodes to various devices, they need to have a simple structure and be easy to manufacture.

[0004] According to one embodiment of the present invention, an object is to provide a light emitting device package having a simple structure and a simple manufacturing method, and an application thereof.

[0005] A light-emitting device package according to one embodiment of the present invention comprises a printed circuit board having a front surface and a back surface, at least one light-emitting device provided on the front surface and emitting light in a direction facing the front surface, and a molding layer provided on the printed circuit board and surrounding the light-emitting device, wherein the light-emitting device comprises a light-emitting structure provided on the printed circuit board, a substrate provided on the light-emitting structure, and a plurality of bump electrodes provided between the light-emitting structure and the printed circuit board. The molding layer covers an upper surface of the substrate, and a micro-protrusion may be provided on an externally exposed surface of the molding layer.

[0006] In one embodiment of the present invention, the micro-roughness can be manufactured by at least one of plasma treatment, micro-sandblasting treatment, pattern transfer, dry polishing, and wet etching.

[0007] In one embodiment of the present invention, the molding layer may have a substantially flat upper surface.

[0008] In one embodiment of the present invention, the molding layer can reflect, scatter, or absorb a portion of external light.

[0009] In one embodiment of the present invention, the molding layer may be filled in at least a portion between the light-emitting structure and the printed circuit board.

[0010] In one embodiment of the present invention, the molding layer may have an external light reflectance, external light scattering rate, or external light absorption rate of about 50% or more.

[0011] In one embodiment of the present invention, the molding layer may have a black color.

[0012] In one embodiment of the present invention, the printed circuit board includes upper electrodes provided on the front surface, lower electrodes provided on the back surface, and via electrodes connecting the upper electrodes and the lower electrodes, and the bump electrodes can be connected to the corresponding upper electrodes.

[0013] In one embodiment of the present invention, the distance between two adjacent lower electrodes may be greater than the distance between two adjacent upper electrodes.

[0014] In one embodiment of the present invention, the light-emitting elements may be provided in multiple units. For example, the light-emitting elements may be provided in four units, and the light-emitting structure of each light-emitting element may include a plurality of epitaxial stacks sequentially stacked on the substrate to emit light of different wavelength bands and having light emission areas overlapping each other.

[0015] In one embodiment of the present invention, the plurality of epitaxial stacks may include a first epitaxial stack emitting a first light, a second epitaxial stack provided on the first epitaxial stack and emitting a second light of a different wavelength band from the first light, and a third epitaxial stack provided on the second epitaxial stack and emitting a third light of a different wavelength band from the first and second lights.

[0016] In one embodiment of the present invention, each of the first to third epitaxial stacks may include a p-type semiconductor layer, an n-type semiconductor layer, and an active layer provided between the p-type semiconductor layer and the n-type semiconductor layer.

[0017] In one embodiment of the present invention, the bump electrodes may include a first bump electrode connected to a p-type semiconductor layer of the first epitaxial stack, a second bump electrode connected to a p-type semiconductor layer of the second epitaxial stack, a third bump electrode connected to a p-type semiconductor layer of the third epitaxial stack, and a fourth bump electrode connected to n-type semiconductor layers of the first to third epitaxial stacks.

[0018] In one embodiment of the present invention, the light-emitting elements include first to fourth light-emitting elements, the lower electrodes include first to sixth scan pads and first and second data pads, the first light-emitting element is connected to the first to third scan pads and the first data pad, the second light-emitting element is connected to the first to third scan pads and the second data pad, the third light-emitting element is connected to the fourth to sixth scan pads and the first data pad, and the fourth light-emitting element can be connected to the fourth to sixth scan pads and the second data pad.

[0019] In one embodiment of the present invention, in each light-emitting element, the bump electrodes include first to fourth bump electrodes, and first to third scan signals can be applied to the first to third bump electrodes, and a data signal can be applied to the fourth bump electrode.

[0020] In one embodiment of the present invention, the molding layer can be formed by a vacuum laminate method.

[0021] In one embodiment of the present invention, the light emitting device package may be employed in a display device or a vehicle lighting device, and in this case, may include a base substrate and at least one light emitting device package provided on the base substrate.

[0022] A light-emitting device package according to one embodiment of the present invention can be manufactured by forming light-emitting devices, arranging the light-emitting devices on a printed circuit board, forming a molding layer on the printed circuit board by a vacuum lamination method to cover the light-emitting devices, treating an externally exposed surface of the molding layer to form a micro-protrusion on the surface of the molding layer, and cutting the printed circuit board and the molding layer to form a light-emitting device package, wherein the molding layer covers an upper surface of the substrate and includes a material that reflects, scatters, or absorbs a portion of external light.

[0023] According to one embodiment of the present invention, a light-emitting device package having a simple structure and a simple manufacturing method is provided. In addition, according to one embodiment of the present invention, a display device using the light-emitting device is provided.

[0024] FIG. 1 is a cross-sectional view illustrating a light-emitting element according to one embodiment of the present invention.

[0025] FIG. 2a is a plan view specifically illustrating a light-emitting element according to one embodiment of the present invention, and FIG. 2b is a cross-sectional view taken along line A-A' of FIG. 2a.

[0026] FIGS. 3A to 7B sequentially illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention, wherein FIGS. 3A, 4A, 5A, 6A, and 7A are plan views, and FIGS. 3B, 4B, 5B, 6B, and 7B are cross-sectional views taken along line A-A' of FIGS. 3A, 4A, 5A, 6A, and 7A.

[0027] Figures 8a to 8e sequentially illustrate a method for manufacturing a light emitting element package.

[0028] Figures 9a and 9b are SEM (scanning electron microscope) photographs showing cases where the molding layer was plasma-treated and cases where it was not plasma-treated, respectively.

[0029] Figures 10a to 10e are cross-sectional views sequentially illustrating a process of forming micro-protrusions on the surface of a molding layer using an imprint mold.

[0030] FIG. 11a is a plan view illustrating a light-emitting element package according to one embodiment of the present invention, and is a top view illustrating four light-emitting elements mounted in a matrix shape on one printed circuit board, and FIG. 11b is a back view of the light-emitting element package illustrated in FIG. 11a.

[0031] Fig. 12 is a circuit diagram of the light emitting element package shown in Figs. 11a and 11b.

[0032] Figure 13 is a schematic cross-sectional view showing a light source module manufactured by mounting a plurality of light emitting element packages on a base substrate for application to a display device or a vehicle lighting device.

[0033] FIG. 14 is a plan view conceptually illustrating a case where a light-emitting element package according to one embodiment of the present invention is applied to a display device.

[0034] Figure 15 is an enlarged plan view of part P1 of Figure 14.

[0035] The present invention is susceptible to various modifications and takes various forms. Specific embodiments are illustrated in the drawings and described in detail herein. However, this is not intended to limit the present invention to specific disclosed forms, but rather to encompass all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present invention.

[0036] Hereinafter, a preferred embodiment of the present invention will be described in more detail with reference to the attached drawings.

[0037] The present invention relates to a light-emitting device, and more particularly, to a light-emitting device that emits light. The light-emitting device of the present invention can be employed as a light source in various devices.

[0038] FIG. 1 is a cross-sectional view illustrating a light-emitting element according to one embodiment of the present invention.

[0039] Referring to FIG. 1, a light-emitting device according to one embodiment of the present invention includes a light-emitting structure formed of a plurality of epitaxial stacks sequentially stacked. The light-emitting structure is provided on a substrate (11).

[0040] The substrate (11) is provided in the form of a plate having a front surface and a back surface.

[0041] A plurality of epitaxial stacks included in the light-emitting structure are provided in two or more, and each can emit light of a different wavelength band. That is, a plurality of epitaxial stacks are provided, and each has the same or different energy band. In the present embodiment, the light-emitting structure is illustrated as being composed of three layers in which epitaxial stacks are sequentially stacked on the front surface of the substrate (11), and the plurality of epitaxial stacks are sequentially stacked in the order of a third epitaxial stack (40), a second epitaxial stack (30), and a first epitaxial stack (20) from the front surface of the substrate (11).

[0042] The substrate (11) can be formed of a light-transmitting insulating material.

[0043] The material of the substrate (11) may be provided as one of the growth substrates capable of growing an epitaxial stack provided on the entire surface of the substrate (11), i.e., a third epitaxial stack (40). In one embodiment of the present invention, the substrate (11) may be sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga2O3), or a silicon substrate (Si).

[0044] Each epitaxial stack emits light in the direction in which the back surface of the substrate (11) faces (downward in FIG. 1). At this time, light emitted from one epitaxial stack propagates in the direction in which the back surface of the substrate (11) faces while transmitting through another epitaxial stack located in the optical path.

[0045] In the present embodiment, the first epitaxial stack (20) can emit a first light, the second epitaxial stack (30) can emit a second light, and the third epitaxial stack (40) can emit a third light. Here, the first to third lights can be the same light or different lights. In one embodiment of the present invention, the first to third lights can be color lights in the visible light wavelength band.

[0046] In one embodiment of the present invention, the first to third lights may be lights of different wavelength bands having sequentially shorter wavelengths. That is, the first to third lights may have the same or different wavelength bands, and may be lights of shorter wavelength bands having higher energy as they go from the first light to the third light. In the present embodiment, the first light may be red light, the second light may be green light, and the third light may be blue light.

[0047] However, the first to third lights may be lights of different wavelength bands with sequentially longer wavelengths, or may be lights of different wavelength bands arranged irregularly regardless of wavelength length. In one embodiment, the first light may be red light, the second light may be blue light, and the third light may be green light.

[0048]

[0049] In a light-emitting structure according to one embodiment of the present invention having the above-described structure, signal wiring for applying a light-emitting signal is independently connected to each epitaxial stack, and accordingly, each epitaxial stack is independently driven. Accordingly, various colors can be implemented by determining whether light is emitted from each epitaxial stack. In addition, since epitaxial stacks emitting light of different wavelengths are formed by overlapping each other vertically, formation is possible in a narrow area.

[0050] To explain in more detail, in a light-emitting laminate according to one embodiment of the present invention, a third epitaxial stack (40) may be provided on a substrate (11), a second epitaxial stack (30) may be provided on the third epitaxial stack (40) with a second adhesive layer (63) interposed therebetween, and a first epitaxial stack (20) may be provided on the second epitaxial stack (30) with a first adhesive layer (61) interposed therebetween.

[0051] The first and second adhesive layers (61, 63) may be formed of a non-conductive material and include a material having light transmittance. For example, the first and second adhesive layers (61, 63) may use an optically clear adhesive. However, one embodiment of the present invention is not limited thereto, and the first and second adhesive layers (61, 63) may also be optically transparent for a specific wavelength. For example, the first and second adhesive layers (61, 63) may be color filters that display a predetermined color by transmitting only a specific wavelength. The color may be selected from various colors, and may be, for example, red, blue, or green, or may be another color.

[0052] The third epitaxial stack (40) includes an n-type semiconductor layer (41), an active layer (43), and a p-type semiconductor layer (45) sequentially arranged from the bottom to the top. The n-type semiconductor layer (41), the active layer (43), and the p-type semiconductor layer (45) of the third epitaxial stack (40) may include a semiconductor material that emits blue light. A third p-type contact electrode (45p) is provided on the p-type semiconductor layer (45) of the third epitaxial stack (40).

[0053] The second epitaxial stack (30) includes a p-type semiconductor layer (35), an active layer (33), and an n-type semiconductor layer (31) sequentially arranged from the bottom to the top. The p-type semiconductor layer (35), the active layer (33), and the n-type semiconductor layer (31) of the second epitaxial stack (30) may include a semiconductor material that emits green light. A second p-type contact electrode (35p) is provided below the p-type semiconductor layer (35) of the second epitaxial stack (30).

[0054] The first epitaxial stack (20) includes a p-type semiconductor layer (25), an active layer (23), and an n-type semiconductor layer (21) sequentially arranged from the bottom to the top. The p-type semiconductor layer (25), the active layer (23), and the n-type semiconductor layer (21) of the first epitaxial stack (20) may include a semiconductor material that emits red light. A first p-type contact electrode (25p) may be provided below the p-type semiconductor layer (25) of the first epitaxial stack (20).

[0055] A first n-type contact electrode may be provided on the upper portion of the n-type semiconductor layer (21) of the first epitaxial stack (20). The first n-type contact electrode (21n) may be formed of a single layer or a multilayer metal. For example, the first n-type contact electrode (21n) may be formed of various materials including metals such as Al, Ti, Cr, Ni, Au, Ag, Ti, Sn, Ni, Cr, W, Cu, or alloys thereof.

[0056] In this embodiment, the first to third p-type contact electrodes (25p, 35p, 45p) may be made of a transparent conductive material so as to transmit light.

[0057] In the present embodiment, a common wiring may be connected to the n-type semiconductor layers (21, 31, 41) of the first to third epitaxial stacks (20, 30, 40). Here, the common wiring is a wiring to which a common voltage is applied. In addition, a light-emitting signal wiring may be connected to the p-type semiconductor layers (25, 35, 45) of the first to third epitaxial stacks (20, 30, 40) through p-type contact electrodes (25p, 35p, 45p), respectively. Specifically, a common voltage (S) may be applied to the first n-type contact electrode (21n) and the second and third n-type semiconductor layers (31, 41) through the common wiring. C) is applied, and a light emission signal is applied to the p-type contact electrodes (25p, 35p, 45p) of the first to third epitaxial stacks (20, 30, 40) through a light emission signal wiring, thereby controlling the light emission of the first to third epitaxial stacks (20, 30, 40). Here, the light emission signal is a first to third light emission signal (S) corresponding to each of the first to third epitaxial stacks (20, 30, 40). R , S G , S B ) is included. In one embodiment of the present invention, the first light-emitting signal (S R ) is a red light, the second light emission signal (S G ) is green light, and the third light-emitting signal (S B ) may be a signal corresponding to the emission of blue light.

[0058] According to the above-described embodiment, the first to third epitaxial stacks (20, 30, 40) are driven according to the light-emitting signal applied to each epitaxial stack. That is, the first epitaxial stack (20) is driven according to the first light-emitting signal (S R ) is driven according to the second epitaxial stack (30), and the second luminescence signal (S G ) is driven according to the third epitaxial stack (40), and the third luminescence signal (S B ) is driven according to the first, second, and third driving signals (S R , S G , S B ) are independently applied to the first to third epitaxial stacks (20, 30, 40), and as a result, the first to third epitaxial stacks (20, 30, 40) are each independently driven. The light-emitting laminate can ultimately provide light of various colors and various amounts by a combination of the first to third lights emitted downward from the first to third epitaxial stacks (20, 30, 40).

[0059] In the above-described embodiment, a common voltage is provided to the n-type semiconductor layers (21, 31, 41) of the first to third epitaxial stacks (20, 30, 40), and a light emission signal is applied to the p-type semiconductor layers (25, 35, 45) of the first to third epitaxial stacks (20, 30, 40). However, the embodiment of the present invention is not limited thereto. In another embodiment of the present invention, a common voltage may be provided to the p-type semiconductor layers (25, 35, 45) of the first to third epitaxial stacks (20, 30, 40), and a light emission signal may be applied to the n-type semiconductor layers (21, 31, 41) of the first to third epitaxial stacks (20, 30, 40).

[0060] According to an embodiment of the present invention, a light-emitting stack having the above-described structure provides different light in an overlapping area rather than implementing different lights on different planes spaced apart from each other when implementing color, so that miniaturization and integration of the light-emitting element are possible. According to the present invention, since parts of light-emitting elements that implement different lights are provided as a stack by overlapping them in one area, full color implementation is possible in a significantly smaller area compared to the existing invention. Accordingly, manufacturing of a high-resolution device is possible even in a small area. In addition, in the light-emitting stack having the above-described structure, when epitaxial stacks that emit light of the same wavelength band are stacked rather than epitaxial stacks that emit different wavelength bands, manufacturing of a light-emitting device in which the intensity of the light is controlled in various ways is possible.

[0061] A light-emitting laminate according to one embodiment of the present invention sequentially laminates multilayer epitaxial stacks on a single substrate, and then forms contact portions and connects wiring portions to the multilayer epitaxial stacks through a minimal number of processes. In addition, compared to a conventional display device manufacturing method in which light-emitting elements of individual colors are manufactured separately and individually mounted, the present invention only requires mounting one light-emitting laminate instead of multiple light-emitting elements, thereby significantly simplifying the manufacturing method.

[0062] A light-emitting element according to one embodiment of the present invention can be implemented in various forms, and specific embodiments will be described with reference to FIGS. 2a and 2b.

[0063] FIG. 2a is a plan view specifically illustrating a light-emitting element according to one embodiment of the present invention, and FIG. 2b is a cross-sectional view taken along line A-A' of FIG. 2a.

[0064] Referring to FIGS. 2A and 2B, a light-emitting device according to one embodiment of the present invention includes a substrate (11), a light-emitting structure provided on the substrate and including a plurality of epitaxial stacks, and bump electrodes (20bp, 30bp, 40bp, 50bp) provided on the light-emitting structure. The light-emitting structure includes a third epitaxial stack (40), a second epitaxial stack (30), and a first epitaxial stack (20) stacked on the substrate (11).

[0065] Each of the first to third epitaxial stacks (20, 30, 40) includes a p-type semiconductor layer, an n-type semiconductor layer, and an active layer provided between the p-type semiconductor layer and the n-type semiconductor layer. In the drawing, the n-type semiconductor layer, the p-type semiconductor layer, and the active layer of each epitaxial stack are represented as a single-layer epitaxial stack.

[0066] A third p-type contact electrode (45p), a second adhesive layer (63), and a second p-type contact electrode (35p) are sequentially provided on the third epitaxial stack (40). The second p-type contact electrode (35p) is in direct contact with the second epitaxial stack (30).

[0067] A first adhesive layer (61) and a first p-type contact electrode (25p) are sequentially provided on the second epitaxial stack (30). The first p-type contact electrode (25p) is in direct contact with the first epitaxial stack (20).

[0068] A first n-type contact electrode (21n) is provided on the first epitaxial stack (20). The first n-type semiconductor layer (21) may have a structure in which a portion of the upper surface is sunken, and the first n-type contact electrode (21n) may be provided on the sunken portion.

[0069] A single-layer or multi-layer insulating film is provided on the substrate (11) on which the first to third epitaxial stacks (20, 30, 40) are laminated. In one embodiment of the present invention, a first insulating film (81) and a second insulating film (83) covering the laminate of the first to third epitaxial stacks (20, 30, 40) may be provided on the side surfaces and a portion of the upper surfaces of the first to third epitaxial stacks (20, 30, 40). The first and / or second insulating films (81, 83) may be made of various organic / inorganic insulating materials, and the material or shape thereof is not limited. For example, the first and / or second insulating films (81, 83) may be provided as a silicon oxide film, a silicon nitride film, Al2O3, or a DBR (distributed Bragg reflector). Additionally, the first and / or second insulating films (81, 83) may be black colored organic polymer films.

[0070] A pixel is provided with contact portions for connecting wiring portions to first to third epitaxial stacks (20, 30, 40). The contact portions include a first contact portion (20C) for providing a light-emitting signal to the first epitaxial stack (20), a second contact portion (30C) for providing a light-emitting signal to the second epitaxial stack (30), a third contact portion (40C) for providing a light-emitting signal to the third epitaxial stack (40), and a fourth contact portion (50C) for applying a common voltage to the first to third epitaxial stacks (20, 30, 40). In one embodiment of the present invention, the first to fourth contact portions (20C, 30C, 40C, 50C) may be provided at various positions when viewed in a plan view.

[0071] The first to fourth contact portions (20C, 30C, 40C, 50C) may each include first to fourth pads (20pd, 30pd, 40pd, 50pd) and first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp).

[0072] Each of the first to fourth pads (20pd, 30pd, 40pd, 50pd) is spaced apart from each other and insulated.

[0073] Each of the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) may be provided in an area that overlaps the first to third epitaxial stacks (20, 30, 40), i.e., a light-emitting area, while being spaced apart from each other and insulated from each other. Each of the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) may be formed across the edge of the first to third epitaxial stacks (20, 30, 40), thereby covering side surfaces of the active layers of the first to third epitaxial stacks (20, 30, 40).

[0074] The first contact portion (20C) includes a first pad (20pd) and a first bump electrode (20bp) that are electrically connected to each other. The first pad (20pd) is provided on the first p-type contact electrode (25p) of the first epitaxial stack (20) and is connected to the first p-type contact electrode (25p) through a first contact hole (20CH) provided in the first insulating film (81). The first bump electrode (20bp) overlaps at least a portion of the first pad (20pd). The first bump electrode (20bp) is connected to the first pad (20pd) through a first through-hole (20ct) with the second insulating film (83) interposed therebetween in the area overlapping the first pad (20pd).

[0075] The second contact portion (30C) includes a second pad (30pd) and a second bump electrode (30bp) that are electrically connected to each other. The second pad (30pd) is provided on the second p-type contact electrode (35p) and is connected to the second p-type contact electrode (35p) through a second contact hole (30CH) formed in the first insulating film (81). The second bump electrode (30bp) overlaps the second pad (30pd) at least partially. The second bump electrode (30bp) is connected to the second pad (30pd) through a second through-hole (30ct) with the second insulating film (83) interposed therebetween in the area overlapping the second pad (30pd).

[0076] The third contact portion (40C) includes a third pad (40pd) and a third bump electrode (40bp) that are electrically connected to each other. The third pad (40pd) is provided on the third p-type contact electrode (45p) and is connected to the third p-type contact electrode (45p) through a third contact hole (40CH) formed in the first insulating film (81). The third bump electrode (40bp) overlaps the third pad (40pd) at least partially. The third bump electrode (40bp) is connected to the third pad (40pd) through a third through-hole (40ct) with the second insulating film (83) interposed therebetween in the area overlapping the third pad (40pd).

[0077] The fourth contact portion (50C) includes a fourth pad (50pd) and a fourth bump electrode (50bp) that are electrically connected to each other. The fourth pad (50pd) is connected to the first to third epitaxial stacks (40) through first to third sub-contact holes (50CHa, 50CHb, 50CHc) provided on the first n-type contact electrode (21n) of the first to third epitaxial stacks (20, 30, 40) and the second and third n-type semiconductor layers, respectively. Here, the third epitaxial stack (40) has a portion of its upper surface removed to expose the third n-type semiconductor layer, and the fourth pad (50pd) is connected to the third n-type semiconductor layer of the third semiconductor layer.

[0078] In detail, the fourth pad (50pd) is connected to the first epitaxial stack (20) through a first sub-contact hole (50CHa) provided on a first n-type contact electrode of the first epitaxial stack (20), connected to the second epitaxial stack (30) through a second sub-contact hole (50CHb) provided on a second n-type semiconductor layer of the second epitaxial stack (30), and connected to the third epitaxial stack (40) through a third sub-contact hole (50CHc) provided on a third n-type semiconductor layer of the third epitaxial stack (40). The fourth bump electrode (50bp) overlaps at least a portion of the fourth pad (50pd). The fourth bump electrode (50bp) is connected to the fourth pad (50pd) through the fourth through-hole (50ct) with the second insulating film (83) interposed therebetween in an area overlapping the fourth pad (50pd).

[0079] In one embodiment of the present invention, although not shown, the substrate (11) may further be provided with a wiring portion (see FIG. 5) electrically connected to each of the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) corresponding to the first to fourth contact portions (20C, 30C, 40C, 50C) and / or a driving element such as a thin film transistor connected to the wiring portion. For example, the first to third epitaxial stacks (20, 30, 40) may be connected to first to third light-emitting signal wires that provide light-emitting signals to the first to third epitaxial stacks (20, 30, 40) through the first to third bump electrodes (20bp, 30bp, 40bp), respectively, and a common wire that provides a common voltage to the first to third epitaxial stacks (20, 30, 40) through the fourth bump electrode (50bp). In the present embodiment, the first to third light-emitting signal wires may correspond to the first to third scan wires, respectively, and the common wire may correspond to the data wire, respectively.

[0080] FIGS. 3A to 7B sequentially illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention, wherein FIGS. 3A, 4A, 5A, 6A, and 7A are plan views, and FIGS. 3B, 4B, 5B, 6B, and 7B are cross-sectional views taken along line A-A' of FIGS. 3A, 4A, 5A, 6A, and 7A.

[0081] Referring to FIGS. 3A and 3B, a light-emitting structure is formed on a substrate (11). The light-emitting structure may be sequentially grown by a variety of processes, such as a chemical vapor deposition method, a metal organic chemical vapor deposition method, and a molecular beam deposition method, including a third epitaxial stack (40), a third p-type contact electrode (45p), a second adhesive layer (63), a second p-type contact electrode (35p), a second epitaxial stack (30), a first adhesive layer (61), a first p-type contact electrode (25p), a first epitaxial stack (20), and a first n-type contact electrode (21n).

[0082] The light-emitting structure can be patterned into various shapes, taking into account the overall wiring connection structure, etc. For example, it can be formed into a polygonal shape when viewed on a plane, taking into account the positions of the contact holes, through-holes, and pads described above.

[0083] According to one embodiment, portions of the first to third epitaxial stacks (20, 30, 40) and the first to third p-type contact electrodes (25p, 35p, 45p) may be etched through an etching process to expose the upper surfaces at positions where the first to fourth contact holes (20CH, 30CH, 40CH, 50CH; see FIGS. 4A and 4B) are to be formed.

[0084] Referring to FIGS. 4A and 4B, a first insulating film (81) can be conformally formed on a vertically stacked light emitting structure. The first insulating film (81) can include an oxide, for example, silicon oxide and / or silicon nitride.

[0085] The first insulating film (81) is patterned and a portion thereof is removed, thereby forming the first to fourth contact holes (20CH, 30CH, 40CH, 50CH).

[0086] The first contact hole (20CH) is disposed on the first p-type contact electrode (25p) and exposes a portion of the first p-type contact electrode (25p). The second contact hole (30CH) is disposed on the second epitaxial stack (30) and exposes a portion of the second p-type contact electrode (35p). The third contact hole (40CH) is disposed on the third p-type contact electrode (45p) and exposes a portion of the third p-type contact electrode (45p). The fourth contact hole (50CH) includes first to third sub-contact holes (50CHa, 50CHb, 50CHc), and each of the first to third sub-contact holes (50CHa, 50CHb, 50CHc) is disposed on the first n-type contact electrode (21n), the second n-type semiconductor layer of the second epitaxial stack (30), and the third n-type semiconductor layer of the third epitaxial stack (40), thereby exposing a portion of the first n-type contact electrode (21n), the second n-type semiconductor layer of the second epitaxial stack (30), and the third n-type semiconductor layer of the third epitaxial stack (40).

[0087] Referring to FIGS. 5A and 5B, first to fourth pads (20pd, 30pd, 40pd, 50pd) are formed on a first insulating film (81) on which first to fourth contact holes (20CH, 30CH, 40CH, 50CH) are formed. Various conductors including metals can be used as a conductive film material for forming the first to fourth pads (20pd, 30pd, 40pd, 50pd), and for example, can be made of at least one of Ni, Ag, Au, Pt, Ti, Al, and Cr.

[0088] The first to fourth pads (20pd, 30pd, 40pd, 50pd) are formed to overlap with portions where the first to fourth contact holes (20CH, 30CH, 40CH, 50CH) are formed. Here, the fourth pad (50pd) may be formed to overlap simultaneously with portions where the first to third sub-contact holes (50CHa, 50CHb, 50CHc) are formed.

[0089] Referring to FIGS. 6A and 6B, a second insulating film (83) can be conformally formed on a first insulating film (81). The second insulating film (83) can include an oxide, for example, silicon oxide and / or silicon nitride.

[0090] The second insulating film (83) is patterned and a portion thereof is removed, thereby forming the first to fourth through-holes (20ct, 30ct, 40ct, 50ct).

[0091] The first to fourth through-holes (20ct, 30ct, 40ct, 50ct) are respectively arranged on the first to fourth pads (20pd, 30pd, 40pd, 50pd) to expose a portion of the first to fourth pads (20pd, 30pd, 40pd, 50pd).

[0092] Referring to FIGS. 7a and 7b, first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) are formed on the second insulating film (83) on which first to fourth through-holes (20ct, 30ct, 40ct, 50ct) are formed.

[0093] The first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) are formed to overlap with portions where the first to fourth through-holes (20ct, 30ct, 40ct, 50ct) are formed, respectively, and accordingly, the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) are connected to the first to fourth pads (20pd, 30pd, 40pd, 50pd) through the first to fourth through-holes (20ct, 30ct, 40ct, 50ct), respectively.

[0094] The first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) may have a wider area than the corresponding first to fourth pads (20pd, 30pd, 40pd, 50pd). In addition, the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) may overlap at least a portion of a light emitting region from which the first to third epitaxial stacks (20, 30, 40) emit light when viewed in a plan view.

[0095] The first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) can be formed by a plating method using various metals. The first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) can further include a seed layer for forming a metal layer in the plating process. Various metals, for example, metals including Cu, Ni, Ti, etc., can be used for the seed layer, and can be varied in various ways depending on the metal material to be plated.

[0096] When the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) are formed by a plating method, it is possible to form the upper surfaces of the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) flat. The light-emitting structure has an upper step due to etching, etc. to form a contact structure for connection with external wiring, and when connecting to other elements, electrical connection between other elements and the light-emitting structure may be difficult when forming a general metal layer due to the step. However, when forming by a plating method, it is possible to form electrodes having a flat upper surface even on the light-emitting structure composed of an epitaxial layer with a large step. In addition, the plated first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) may have flat upper surfaces themselves, but polishing may be additionally performed on the upper surfaces of the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) to increase the flatness.

[0097] The first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) are not particularly limited as long as they are used as wiring materials in semiconductor devices, but may be made of metals and / or metal alloys such as SnAg, Sn, CuSn, CuN, CuAg, Sb, Ni, Zn, Mo, Co, etc. In one embodiment of the present invention, the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) may be made of only Sn, or may be made of Cu / Ni / Sn. When the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) are made of Cu / Ni / Sn, internal diffusion of impurities into the light-emitting structure can be minimized, and in particular, since Cu is used as the material of the bump electrodes, penetration of Sn into the light-emitting structure can be prevented.

[0098] The first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) are formed using a plating method, and then the strength of the first to fourth bump electrodes (20bp, 30bp, 40bp, 50bp) can be increased through an additional heat treatment process, i.e., a reflow process.

[0099] In one embodiment of the present invention, a light-emitting device having the structure described above may be implemented as a package and mounted on another device, such as a printed circuit board, to function as a single light-emitting device package. Accordingly, various wiring may be additionally provided to achieve a structure that is easily mounted on another device.

[0100] FIGS. 8A to 8E sequentially illustrate a method for manufacturing a light-emitting device package. In FIGS. 8A to 8E, for convenience of explanation, the first to third epitaxial stacks are simplified and illustrated as a light-emitting structure (10), and the first to fourth pads and the first to fourth bump electrodes are also simplified and illustrated as a pad (pd) and a bump electrode (bp). In particular, in the drawing, the light-emitting structure (10) is simplified and illustrated as having a flat upper surface, but has a structure with a step and / or slope on the upper surface.

[0101] In one embodiment of the present invention, a light-emitting element package can be formed by mounting at least one light-emitting element (110) on a printed circuit board (11p) on which wiring or the like is formed. The light-emitting element package can particularly include a plurality of light-emitting elements (110).

[0102] Referring to Fig. 8a, a printed circuit board (11p) is prepared, and a plurality of light-emitting elements (110) are arranged on the printed circuit board (11p).

[0103] The printed circuit board (11p) has wires and electrodes formed thereon for electrical connection between various elements, and at least one light-emitting element (110) can be mounted on the surface of the printed circuit board (11p). The printed circuit board (11p) can be provided in various forms depending on the arrangement of the wires, but in the present embodiment, for convenience of explanation, it is illustrated that the electrodes are provided on the front surface, the back surface, and between the front and back surfaces of the board (11). However, the arrangement of the wires of the printed circuit board (11p) is not limited thereto. In one embodiment of the present invention, the printed circuit board (11p) may or may not have flexibility.

[0104] In one embodiment of the present invention, a printed circuit board (11p) has a front surface and a back surface. Upper electrodes (11pa) are provided on the front surface of the printed circuit board (11p), lower electrodes (11pc) are provided on the back surface, and via electrodes (11pb) are provided to connect the upper electrodes (11pa) and the lower electrodes (11pc) by penetrating the front and back surfaces of the printed circuit board (11p). The front surface of the printed circuit board (11p) is a surface on which light-emitting elements (110) are mounted. In one embodiment of the present invention, the upper electrodes (11pa) of the printed circuit board (11p) are formed at positions corresponding to bump electrodes (bp) of each light-emitting element (110) to be attached thereto later.

[0105] The wires and / or electrodes on the printed circuit board (11p) may be surface-treated with Electroless Nikel Immersion Gold (ENIG). For example, in one embodiment of the present invention, the upper electrodes (11pa) may be surface-treated with ENIG. When the wires and / or electrodes on the printed circuit board (11p) are subjected to ENIG treatment, they may be partially melted at high temperatures and easily connected to the bump electrodes (bp) of the light-emitting elements (110).

[0106] The light emitting elements (110) are attached to a carrier substrate (11c) and placed on top of a printed circuit board (11p). The carrier substrate (11c) is for transporting the light emitting elements (110) and has an adhesive layer (13) formed on one surface thereof, and the light emitting elements (110) are attached to the carrier substrate (11c) by the adhesive layer (13). The adhesive layer (13) may be a silicone-based polymer that is highly heat-resistant and allows the light emitting elements (110) to be detached from the carrier substrate (11c), and may be manufactured in the form of a tape or sheet and provided on the lower surface of the carrier substrate (11c). The adhesive layer (13) may be prepared to have an adhesive strength that allows the light emitting elements (110) to be stably attached to the carrier substrate (11c) but also allows the light emitting elements (110) to be easily detached when attached to the printed circuit board (11p). That is, the adhesive strength of the adhesive layer (13) to the light-emitting element (110) may have a smaller value than the adhesive strength between the light-emitting elements (110) and the printed circuit board (11p).

[0107] The light emitting elements (110) can be attached to the lower portion of the carrier substrate (11c) in an inverted form, with the substrate (11) positioned on the upper portion and the light emitting structure (10) positioned on the lower portion. Here, the light emitting element (110) attached to the carrier substrate (11c) has an inverted form, with the back surface of the substrate (11) attached to the adhesive layer (13) on the carrier substrate (11c), with the substrate (11) on the upper portion and the light emitting structure (10) on the lower portion. The light emitting elements (110) are spaced apart from each other and placed on the printed circuit board (11p) while attached to the carrier substrate (11c).

[0108] Referring to FIG. 8b, light emitting elements (110) are attached on a printed circuit board (11p), and the carrier substrate (11c) and the adhesive layer (13) are removed. The light emitting elements (110) attached on the carrier substrate (11c) can be pressed from top to bottom so that the bump electrodes (bp) contact the corresponding upper electrodes (11pa) of the printed circuit board (11p). The pressing step can be performed at a high temperature, and a portion of the upper electrodes (11pa) on the printed circuit board (11p) melts and is connected to the bump electrodes (bp) of the light emitting elements (110). The carrier substrate (11c) is then removed, and since the adhesive layer (13) on the carrier substrate (11c) has an adhesive strength that is weaker than the adhesive strength between the bump electrodes (bp) of the light-emitting elements (110) and the upper electrodes (11pa) of the printed circuit board (11p), the carrier substrate (11c) can be easily separated from the light-emitting elements (110).

[0109] In this way, by attaching the bump electrodes (bp) to the upper electrodes (11pa) of the printed circuit board (11p), the overall structure is arranged in the order of the printed circuit board (11p), bump electrodes (bp), pads (pd), light-emitting structure (10), and substrate (11) from the bottom to the top. Light from the light-emitting structure (10) travels in the direction in which the back surface of the substrate (11) faces from the light-emitting structure (10) (upward direction in the drawing), and accordingly, the direction in which the front surface of the printed circuit board (11p) faces becomes the direction in which light is emitted.

[0110] Referring to FIG. 8c, a molding layer (90) is formed on a printed circuit board (11p) on which light-emitting elements (110) are mounted. The molding layer (90) has a property of transmitting at least a portion of light, but reflects, scatters, and / or absorbs a portion of external light. The molding layer (90) covers at least a portion of the light-emitting element (110) and reflects, scatters, and / or absorbs a portion of the external light in various directions, thereby preventing the external light from being reflected in a specific direction, particularly in a direction that can be seen by a user. In addition, the molding layer (90) covers at least a portion of the light-emitting element (110), thereby preventing the light-emitting element (110) from being damaged by moisture and / or physical impact from the outside, thereby increasing the reliability of the light-emitting element (110).

[0111] The molding layer (90) is provided so as to be able to reflect, scatter, and / or absorb a portion of external light in various directions, and in particular, the molding layer (90) may have a black color. However, in addition to the black color, it may have a color other than the black color as long as it can reflect, scatter, and / or absorb a portion of external light in various directions to maximally prevent reflection of external light toward the user.

[0112] In order to prevent reflection of external light in a specific direction, the molding layer (90) also surrounds at least a portion of the light emitting element (110), and in particular, is formed to cover the back surface of the substrate (11) within the light emitting element (110). In one embodiment of the present invention, the molding layer (90) is formed to cover the back surface of the substrate (11), thereby preventing external light from being reflected by the back surface of the substrate (11) and being visible to the user's eyes. In order to prevent reflection of such external light in a specific direction, the molding layer (90) can reflect, scatter, or absorb about 50% or more of the external light in various directions. In one embodiment of the present invention, the molding layer (90) can reflect, scatter, or absorb about 80% or more of the external light.

[0113] The molding layer (90) may be formed to a thickness that can be transparent so that light directed from the light-emitting structure (10) toward the back surface (i.e., upward direction) of the substrate (11) can be maximally emitted. For example, the molding layer (90) may be formed to a thickness that allows more than 50% of the light from the light-emitting structure to be transmitted when provided on the back surface of the light-emitting structure (10), and may be provided to a thickness such that the height from the back surface of the light-emitting structure (10) is 100 micrometers or less. Alternatively, the molding layer (90) may be provided to such an extent that the height from the back surface of the light-emitting structure (10) is smaller than the thickness of the light-emitting element.

[0114] The molding layer (90) may be formed not only on the back surface of the substrate (11), but may also cover the side surface of the light-emitting element (110), that is, the side surface of the substrate (11) and the side surface of the light-emitting structure (10). Since the molding layer (90) also covers the side surface of the light-emitting element (110), at least a portion of the light emitted through the side surface of the light-emitting element (110) may be absorbed by the molding layer (90). Accordingly, the molding layer (90) may prevent light emitted from the light-emitting structure (10) from being mixed with light emitted from an adjacent light-emitting structure (10).

[0115] In one embodiment of the present invention, the molding layer (90) may be formed of an organic polymer that absorbs light. In one embodiment of the present invention, the molding layer (90) may or may not further include an organic / inorganic filler in addition to the organic polymer. For example, if the molding layer (90) includes a filler, the filler may be an inorganic filler. Various inorganic fillers may be used, and examples thereof include silica, alumina, and the like.

[0116] In addition, the molding layer (90) is filled in at least a portion between the light-emitting structure (10) and the printed circuit board (11p). That is, the molding layer (90) can fill the empty space between the light-emitting structure (10) provided with bump electrodes (bp) and the printed circuit board (11p). By filling the space between the light-emitting structure (10) and the printed circuit board (11p) with the molding layer (90), heat generated from the light-emitting structure (10) can be effectively dispersed, thereby improving the heat dissipation characteristics of the light-emitting elements (110).

[0117] In one embodiment of the present invention, the molding layer (90) can be manufactured by various methods such as a lamination method, a coating method, a chemical vapor deposition method, a printing method, and a transfer molding method. When manufacturing the molding layer (90), various thin film forming processes can be used, including an additional process for planarizing the surface of the molding layer (90). For example, in order to planarize the surface of the molding layer (90), squeegeeing can be performed before the molding layer (90) material is cured after coating, or pressure planarization can be performed using a flat plate. In addition, polishing or lapping can be performed on the surface after the molding layer (90) material is cured.

[0118] In one embodiment of the present invention, the molding layer (90) is formed by a transfer molding method, so that the upper surface of the molding layer (90) can be obtained as a flat upper surface. The transfer molding method can be performed through extrusion molding, in which a certain unit of packages on which light-emitting elements are mounted is placed in a molding mold, and then a resin that has been liquefied from a solid state is pressed into the mold to form the mold.

[0119] Among the methods for planarizing the surface of the molding layer (90), the lamination method may be a vacuum lamination method performed in a vacuum. In this case, the molding layer (90) may be formed of an organic polymer sheet in the form of a film, and may be formed by placing the organic polymer sheet on a printed circuit board (11p) on which light-emitting elements (110) are mounted, and then heating and pressurizing it in a vacuum atmosphere. The organic polymer sheet may exhibit some fluidity at high temperature and high pressure, and due to this fluidity, it may fill the area between the light-emitting elements (110) and the space between the light-emitting elements (110) and the printed circuit board (11p). Thereafter, the organic polymer sheet is cured.

[0120] In one embodiment of the present invention, the molding layer (90) is formed by a vacuum lamination method, so that the upper surface of the molding layer (90) can be obtained as a flat upper surface. Conventionally, the molding layer (90) was formed using a process of applying an organic polymer material and then curing it. In this case, a difference in the upper surface height occurred between the area where the light-emitting elements (110) were mounted and the area where the light-emitting elements (110) were not mounted. The difference in the upper surface height causes non-uniformity of the light emitted from the light-emitting elements (110). However, according to one embodiment of the present invention, by forming the upper surface of the molding layer (90) flat, the uniformity of the light is increased regardless of the position of the light-emitting elements (110).

[0121] In addition, since the molding layer (90) is provided to stably hold the light emitting elements (110), the rigidity of the light emitting element package can be increased. In particular, the molding layer (90) can fill the space between the printed circuit board (11p) and the light emitting elements (110), and thus can have the effect of increasing the adhesive strength between the printed circuit board (11p) and the light emitting elements (110). Accordingly, the rigidity of the entire light emitting element package is further increased.

[0122] Referring to FIG. 8d, the surface of the molding layer (90) is textured to form micro-roughnesses (91) on the surface exposed to the outside of the molding layer (90). The micro-roughnesses (91) are for diffuse reflection, and the purpose is to further minimize the reflection of external light in the user's field of vision by having external light diffusely reflected by the micro-roughnesses (91). When a light-emitting device package is used in applications such as various lighting or display devices, the substrate (11) of the light-emitting device is placed at a position facing the user's field of vision, and therefore, it is necessary to block the light reflected by the substrate (11) as much as possible. Accordingly, by additionally forming the micro-roughnesses (91) in addition to the molding layer (90) having light-scattering properties, light-reflecting properties, and light-absorbing properties, the user's glare caused by the reflection of external light is further reduced.

[0123] In one embodiment of the present invention, the molding layer may further include fillers such as silica or alumina, and after texturing, these filler particles may be exposed on the surface of the molding layer. In this case, the scattering of external light can be further improved by randomly exposing the filler particles on the surface.

[0124] There may be various methods for forming the micro-roughness (91). In one embodiment of the present invention, the surface of the molding layer (90) may be etched using plasma.

[0125] Figures 9a and 9b are SEM photographs showing the surface of the molding layer when plasma treatment was performed and when plasma treatment was not performed, respectively.

[0126] Looking at Figure 9a, it can be seen that a number of fillers are randomly exposed to the outside on the surface of the molding layer after plasma treatment. The multiple fillers are exposed to the outside surface in various sizes and frequencies, and thus, the external light scattering effect of the fillers can be significantly increased.

[0127] In comparison, looking at Figure 9b, it can be seen that the number of fillers exposed to the surface is significantly smaller when plasma treatment is not performed compared to after plasma treatment. This confirms that micro-roughness can be easily formed on the surface of the molding layer using plasma treatment.

[0128] Here, the analysis of the components before and after plasma treatment showed that no change in the components of the molding layer was observed, indicating that micro-roughness can be formed without degeneration of the molding layer.

[0129] In one embodiment of the present invention, in addition to plasma treatment, a micro-sandblaster may be used to roughen the surface to form fine uneven portions. When a micro-sandblaster is used, fine particles of several micrometers to several tens of micrometers are sprayed at high pressure onto the surface of the molding layer, the surface of the molding layer is cleaned using ultrasonic cleaning or the like, and then dried to form fine uneven portions on the surface of the molding layer. Alternatively, a method such as dry polishing or wet etching the surface of the molding layer (90) may be used alone or in combination with the above-described methods.

[0130] According to one embodiment of the present invention, a micro-concave pattern can be transferred to the surface of a molding layer using an imprint mold having a micro-concave pattern formed thereon, thereby forming a micro-concave portion on the surface of a molding layer.

[0131] Figures 10a to 10e are cross-sectional views sequentially illustrating a process of forming micro-protrusions on the surface of a molding layer using an imprint mold.

[0132] Referring to Fig. 10a, a master mold (MM) is first manufactured. The master mold (MM) has a pattern (indicated by 91) identical to the micro-protrusions to be transferred to the surface of the molding layer, and is used to form a reverse pattern on the imprint mold (IMP).

[0133] Referring to Fig. 10b, an imprint mold (IMP) material is applied onto a master mold (MM), the imprint mold (IMP) is cured, and then the imprint mold (IMP) is separated from the master mold (MM). Accordingly, a reverse pattern (indicated by 91R) of the micro-protrusions on the master mold (MM) is formed on the lower surface of the imprint mold (IMP).

[0134] Referring to Fig. 10c, an imprint mold (IMP) having a reverse pattern (91R) formed thereon is placed on top of a molding layer (90) and then pressure is applied from top to bottom.

[0135] Referring to FIG. 10d, the reverse pattern (91R) of the imprint mold (IMP) is transferred to the upper surface of the molding layer (90) by the pressure of the imprint mold (IMP), and after the transfer, the imprint mold (IMP) is separated from the molding layer (90).

[0136] Referring to Fig. 10e, a micro-protrusion (91) is formed on the upper surface of the molding layer (90) from which the imprint mold (IMP) has been removed.

[0137] According to this embodiment, the shape of the micro-concave portion of the final molding layer is determined based on the shape of the micro-concave portion pattern on the master mold. Accordingly, the micro-concave portion pattern of the master mold can be formed with different shapes, densities, etc. as needed. Accordingly, the shape, density, etc. of the micro-concave portion of the molding layer can also be controlled, and ultimately, the degree of scattering of external light by the micro-concave portion on the upper surface of the molding layer can be easily adjusted.

[0138] Referring again to FIG. 8e, after the molding layer (90) having the micro-protrusions is formed, the printed circuit board (11p) and the light-emitting elements (110) are cut to an appropriate size to be included in the light-emitting element package, thereby forming a light-emitting element package. At this time, the light-emitting elements (110) may be cut to be individually separated and included, or may be cut to have a large area so that a plurality of light-emitting elements (110) are included. The number of light-emitting elements (110) and their area during cutting may be set differently depending on the device in which the light-emitting elements (110) are subsequently mounted.

[0139] In a light-emitting device package, the number of light-emitting devices mounted on a printed circuit board forming one light-emitting device package can be varied. Fig. 11a is a plan view illustrating a light-emitting device package according to one embodiment of the present invention, and is a top view illustrating four light-emitting devices mounted in a matrix shape on one printed circuit board, and Fig. 11b is a rear view of the light-emitting device package illustrated in Fig. 11a. Fig. 12 is a circuit diagram of the light-emitting device package illustrated in Figs. 11a and 11b.

[0140] Referring to FIGS. 11a, 11b, and 12, a light-emitting device package (110D) includes a printed circuit board (11p) and four light-emitting devices (110) mounted in a 2X2 configuration on the printed circuit board (11p). However, the number and arrangement of the light-emitting device packages (110D) are not limited thereto, and may be arranged in various matrix configurations, for example, 1X1, 3X3, 4X4, etc. Each light-emitting device (110) has a structure in which first to third epitaxial stacks are vertically stacked, as described above. Accordingly, the first to third epitaxial stacks each correspond to a light-emitting diode that generates light. For example, the first to third epitaxial stacks may correspond to a first light-emitting diode that emits red light, a second light-emitting diode that emits green light, and a third diode that emits blue light, respectively.

[0141] First, referring to FIG. 12, in order to drive four light-emitting elements, first to sixth scan wires (SC1, SC2, SC3, SC4, SC5, SC6) and first and second data wires (DT1, DT2) are connected to four light-emitting elements. When the four light-emitting elements are referred to as first to fourth light-emitting elements (110p, 110q, 110r, 110s), the first light-emitting element (110p) is connected to the first to third scan wires (SC1, SC2, SC3) and the first data wire (DT1), and the second light-emitting element (110q) is connected to the first to third scan wires (SC1, SC2, SC3) and the second data wire (DT2). The third light-emitting element (110r) is connected to the fourth to sixth scan wires (SC4, SC5, SC6) and the first data wire (DT1), and the fourth light-emitting element (110s) is connected to the fourth to sixth scan wires (SC4, SC5, SC6) and the second data wire (DT2).

[0142] The three light-emitting diodes included in each of the first to fourth light-emitting elements (110p, 110q, 110r, 110s) selectively emit light in response to a data signal input through a data wire when a scan signal is supplied through a scan wire. Each diode is connected between the scan wire and the data wire, and when a voltage higher than a threshold voltage is applied between the p-type semiconductor layer and the n-type semiconductor layer, the diodes emit light with a brightness corresponding to the magnitude of the applied voltage. That is, the light-emitting of each light-emitting diode can be controlled by adjusting the voltage of the scan signal applied to the scan wire and / or the data signal applied to the data wire. For example, during each frame period, each light-emitting diode emits light with a brightness corresponding to the input data signal. The light-emitting diodes that are supplied with a data signal corresponding to the black brightness do not emit light during the corresponding frame period, thereby displaying black.

[0143] In one embodiment of the present invention, by providing six scan wires and two data wires in this way, the first to fourth light-emitting elements (110p, 110q, 110r, 110s) can be individually driven.

[0144] To this end, the light-emitting elements are mounted at corresponding positions on the printed circuit board (11p). Referring again to FIGS. 11a and 11b, upper electrodes (11pa) are provided at positions corresponding to each light-emitting element (110) on the front surface of the printed circuit board (11p). That is, one light-emitting element (110) has four bump electrodes (bp), and four upper electrodes (11pa) are provided for one light-emitting element (110) on the printed circuit board (11p). The four bump electrodes (bp) of each light-emitting element (110) are arranged one-to-one to overlap and connect to the four upper electrodes (11pa).

[0145] In one embodiment of the present invention, among the first to fourth bump electrodes of the first light-emitting element (110), the first to third bump electrodes are connected to the first to third scan wires, respectively, and the fourth bump electrode is connected to the first data wire. Among the first to fourth bump electrodes of the second light-emitting element (110), the first to third bump electrodes are connected to the first to third scan wires, respectively, and the fourth bump electrode is connected to the second data wire. Among the first to fourth bump electrodes of the third light-emitting element (110), the first to third bump electrodes are connected to the fourth to sixth scan wires, respectively, and the fourth bump electrode is connected to the first data wire. Among the first to fourth bump electrodes of the fourth light-emitting element (110), the first to third bump electrodes are connected to the fourth to sixth scan wires, respectively, and the fourth bump electrode is connected to the second data wire.

[0146] A total of eight lower electrodes are arranged on the back surface of the printed circuit board (11p). The eight lower electrodes correspond to first to sixth scan pads that provide scan signals to the first to sixth scan lines, and first and second data pads that provide data signals to the first and second data lines. For example, if the eight lower electrodes formed on the back surface of the printed circuit board (11p) are referred to as first to eighth lower electrodes (11pc_1, 11pc_2, …, 11pc_8), the first to sixth lower electrodes (11pc_1, 11pc_2, …, 11pc_6) correspond to the first to sixth scan pads, and the seventh and eighth lower electrodes (11pc_7, 11pc_8) correspond to the first and second data pads. However, the arrangement and order of the first to sixth scan pads and the first and second data pads are not limited thereto, and they may be arranged in various shapes and areas on the back surface of the printed circuit board (11p), and their order may be set differently.

[0147] In one embodiment of the present invention, the distance between two adjacent lower electrodes may be greater than the distance between two adjacent upper electrodes. In forming a light-emitting device package, the lower electrodes of the printed circuit board can function as connecting electrodes for electrical connection with other electronic devices when the light-emitting device package is mounted on other electronic devices. Therefore, the distance between the two adjacent lower electrodes is formed relatively wide, thereby enabling the light-emitting device package to be mounted on other electronic devices more easily.

[0148] As described above, a light-emitting device package according to one embodiment of the present invention uses a printed circuit board having a simple structure, and light-emitting devices capable of being individually driven can be easily mounted on the printed circuit board. In addition, since only eight input terminals (i.e., eight lower electrodes) are required to drive four light-emitting devices, driving a plurality of light-emitting devices is possible with a simple structure.

[0149] According to one embodiment of the present invention, the light emitting element package can be applied to other devices in various forms, such as using a single element as a light source, or mounting multiple light emitting element packages on a base substrate to form a module, and then using the module as a light source. Devices using the light emitting element package(s) include display devices, home lighting devices, vehicle lighting (vehicle headlights, lights, taillights, etc.), and various decorative lighting devices.

[0150] Fig. 13 is a schematic cross-sectional view showing a light source module manufactured by mounting a plurality of light emitting element packages (110D) on a base substrate (110b) for application to a display device or a vehicle lighting device, etc.

[0151] Referring to Fig. 13, a base substrate (110b) on which wirings are formed is prepared, and a plurality of light emitting element packages (110D) can be mounted on the base substrate (110b). The base substrate (110b) may or may not be flexible.

[0152] The wirings on the base substrate (110b) are provided to correspond to the bottom electrodes of the light emitting element packages (110D). The wirings on the base substrate (110b) may be connected to the bottom electrodes of the light emitting element packages via the connecting electrodes (11s). In one embodiment of the present invention, the connecting electrodes (11s) may be provided in the form of solder.

[0153] When light-emitting element packages are mounted on a base substrate as in Fig. 13, if a defect occurs in one of the light-emitting element packages, repair is easily possible by exchanging only that light-emitting element package for a good product.

[0154] FIG. 14 is a plan view conceptually illustrating a case where a light-emitting element package according to one embodiment of the present invention is applied to a display device, and FIG. 15 is a plan view enlarged to illustrate part P1 of FIG. 14.

[0155] Referring to FIGS. 14 and 15, a light-emitting element according to one embodiment of the present invention can be employed as a pixel in a display device capable of expressing various colors. A plurality of light-emitting elements can be mounted on a base substrate in the form of the light-emitting element packages (110D) described above.

[0156] A display device (100) according to one embodiment of the present invention displays any visual information, for example, text, video, photo, two-dimensional or three-dimensional image, etc.

[0157] The display device (100) may be provided in various shapes, such as a closed polygon including straight sides such as a rectangle, a circle including curved sides, an ellipse, etc., a semicircle including straight and curved sides, a semi-ellipse, etc. In one embodiment of the present invention, the display device is illustrated as being provided in a rectangular shape.

[0158] The display device (100) has a plurality of pixels that display an image. Each pixel, as the minimum unit for displaying an image, can be implemented as a single light-emitting element. Accordingly, in the present embodiment, each pixel is indicated as 110. Each pixel (110) includes a light-emitting element having the above-described structure and can emit white light and / or colored light.

[0159] In one embodiment of the present invention, each pixel is a first pixel (110) that emits red light. R ), the second pixel (110) emitting green light G ), and a third pixel (110) emitting blue light B ) includes the first to third pixels (110 R , 110 G , 110 B ) can correspond to the first to third epitaxial stacks of the above-described light-emitting element, respectively.

[0160] 3rd pixel (110 R , 110 G , 110 B ) is not limited to this, and at least two pixels may emit light of the same color, or may emit light of different colors, but may also emit light of colors other than the colors described above, such as yellow, magenta, cyan, etc.

[0161] Pixels (110) are arranged in a row-column shape. Here, the meaning that pixels (110) are arranged in a row-column shape does not only mean that pixels (110) are arranged in an exact line along a row or column. Although they are arranged along a row or column as a whole, the detailed positions may change, such as being arranged in a zigzag shape.

[0162] According to the present embodiment, lighting devices of various sizes can be easily manufactured simply by mounting a plurality of light-emitting device packages on a base substrate. For example, a large-area display device can be easily manufactured using a plurality of light-emitting device packages. In addition, if the base substrate or printed circuit board is flexible, the display device can also be flexible, so that display devices of various shapes, such as rollable display devices, foldable display devices, and curved display devices, can be easily manufactured.

[0163] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes to the present invention can be made without departing from the spirit and technical scope of the present invention as set forth in the claims to be described below.

[0164] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the patent claims.

[0165]

Claims

1. A printed circuit board having a front and a back surface; At least one light-emitting element provided on the front surface and emitting light in a direction toward the front surface; and Provided on the printed circuit board and including a molding layer surrounding the light emitting element, The above light emitting element A light emitting structure provided on the printed circuit board; a substrate provided on the above light-emitting structure; and A plurality of bump electrodes are included between the light-emitting structure and the printed circuit board, A light emitting device package in which the molding layer covers the upper surface of the substrate, and a micro-protrusion is provided on the surface exposed to the outside of the molding layer.

2. In paragraph 1, A light emitting device package in which the micro-roughness is manufactured by at least one of plasma treatment, micro-sandblasting treatment, pattern transfer, dry polishing, and wet etching.

3. In paragraph 2, A light emitting device package having a substantially flat upper surface, wherein the molding layer is 4. In paragraph 3, The above molding layer is a light-emitting element package that reflects, scatters, or absorbs a portion of external light.

5. In paragraph 4, A light emitting device package in which the molding layer is filled at least in a portion between the light emitting structure and the printed circuit board.

6. In paragraph 5, A light emitting device package having an external light reflectance, external light scattering rate, or external light absorption rate of about 50% or more, wherein the molding layer is a light emitting element package.

7. In paragraph 6, The above molding layer is a light emitting element package having a black color.

8. In paragraph 1, A light emitting device package in which the printed circuit board includes upper electrodes provided on the front surface, lower electrodes provided on the back surface, and via electrodes connecting the upper electrodes and the lower electrodes, and each of the bump electrodes is connected to each of the corresponding upper electrodes.

9. In paragraph 8, A light emitting device package wherein the distance between two adjacent lower electrodes among the lower electrodes is greater than the distance between two adjacent upper electrodes among the upper electrodes.

10. In paragraph 8, A light emitting device package in which the above light emitting device is provided in multiple pieces.

11. In paragraph 10, A light emitting device package comprising four light emitting devices, each light emitting structure sequentially stacked on the substrate to emit light of different wavelength bands and having a plurality of epitaxial stacks with overlapping light emitting areas.

12. In paragraph 1, The above multiple epitaxial stacks are, A first epitaxial stack emitting the first light; A second epitaxial stack provided on the first epitaxial stack and emitting second light of a different wavelength band from the first light; and A light emitting device package comprising a third epitaxial stack provided on the second epitaxial stack and emitting third light of a wavelength band different from the first and second lights.

13. In paragraph 12, Each of the first to third epitaxial stacks p-type semiconductor layer; n-type semiconductor layer; and A light-emitting device package including an active layer provided between the p-type semiconductor layer and the n-type semiconductor layer.

14. In paragraph 13, The above bump electrodes A first bump electrode connected to the p-type semiconductor layer of the first epitaxial stack; A second bump electrode connected to the p-type semiconductor layer of the second epitaxial stack; a third bump electrode connected to the p-type semiconductor layer of the third epitaxial stack; and A light emitting device package comprising a fourth bump electrode connected to the n-type semiconductor layers of the first to third epitaxial stacks.

15. In paragraph 11, The above light emitting elements include first to fourth light emitting elements, The lower electrodes include first to sixth scan pads and first and second data pads, The first light-emitting element is connected to the first to third scan pads and the first data pad, The second light-emitting element is connected to the first to third scan pads and the second data pad, The third light-emitting element is connected to the fourth to sixth scan pads and the first data pad, The fourth light-emitting element is a light-emitting element package connected to the fourth to sixth scan pads and the second data pad.

16. In paragraph 15, A light emitting device package, wherein, in each light emitting device, the bump electrodes include first to fourth bump electrodes, and first to third scan signals are applied to the first to third bump electrodes and a data signal is applied to the fourth bump electrode.

17. In paragraph 1, The above molding layer is a light emitting element package formed by a vacuum laminate method.

18. Base substrate; and A display device comprising at least one light emitting element package of claim 1 provided on the base substrate.

19. Base substrate; and A lighting device comprising at least one light emitting element package of claim 1 provided on the base substrate.

20. Step of forming light-emitting elements; A step of arranging the light emitting elements on a printed circuit board; A step of forming a molding layer using a vacuum lamination method on the printed circuit board to cover the light emitting elements; A step of forming a micro-uneven portion on the surface of the molding layer by treating the surface exposed to the outside of the molding layer; A step of forming a light emitting element package by cutting the printed circuit board and molding layer is included. A method for manufacturing a light-emitting device package, wherein the molding layer covers the upper surface of the substrate and includes a material that reflects, scatters, or absorbs a portion of external light.