A semiconductor power package and a method of manufacturing such a semiconductor power package

Abstract

A semiconductor power package and a method of manufacturing one. The semiconductor power package comprises a substrate, at least one semiconductor die mounted to the substrate, bonding means mounted to the at least one semiconductor die and to the substrate, and at least one thermal conductive cover element mounted to the substrate and over the at least one semiconductor die, wherein the substrate comprises at least one opening and wherein the thermal conductive cover element comprises at least one protrusion configured to be accommodated in the at least one opening of the substrate. Figure 1