A semiconductor device

Abstract

A B S T R A C T A semiconductor device has a top surface and a bottom surface opposite to the top surface. The semiconductor device comprises a first layer having a first conductivity type located at the top surface and a second layer having a second conductivity type located under the first layer. The semiconductor device further comprises a drift layer under the second layer which further extends to the bottom surface and a conductive element having a third conductivity type. In the semiconductor device there is at least one pair of first trenches, wherein each first trench extends from the top surface through the first layer further through the second layer and partially into the drift layer, each of the trenches comprises an isolating layer and a conductive element having a third conductivity type, wherein the isolating layer is arranged between the conductive element and the first layer and the second layer, one second trench that extends from the top surface through the first layer further through the second layer and partially into the drift layer, each of the trenches comprises an isolating layer and a conductive element having a third conductivity type, wherein the isolating layer is arranged between the conductive element and the first layer and the second layer wherein second trench is located between the first trenches. [Figure 1]