Ti-doped MoOx Coating on a Particulate Substrate

Abstract

The present invention relates to a method for producing a conductive, Ti-doped MoOX coating, wherein 2 s x s 3 and wherein the Ti:Mo ratio in mol% is between 1% to 99%, 1% to 66% or 1% to 33%, on a particulate substrate by gas-phase deposition, comprising the steps of: a. Providing the particulate substrate in a reaction chamber; b. contacting the particulate substrate with a mixture of a vaporised Ti precursor gas and of a vaporised Mo precursor gas, thereby forming a layer of Ti and Mo precursor material on the particulate substrate; c. contacting the layer of Ti and Mo precursor materialwith a vaporized oxidant to allow the oxidant to react with the layer of Ti and Mo precursor material on the particulate substrate at a temperature T1 allowing for removal of the ligands from the respective precursor, yielding a Ti-doped MoOX layer on the surface of the substrate; d. carrying out steps b. — c. for a natural number n 2 1 of cycles so as to stack one or more layers of a conductive, Ti-doped MoOX coating on the outer surface of the particular substrate material until a Ti-doped MoOX coating of thickness d1 between 0.1 and 50 nm as determined bytransmission electron microscopy (TEM) is obtained on the particular substrate material; and e. annealing the coating at elevated temperatures T2.