Method for reading and writing logical information in a superconducting memory cell

Abstract

The subject of the application presented in the drawing is a method for reading and writing logical information using a single current pulse in a superconducting elementary memory cell system consisting of a superconducting trap integrated with a Dayem bridge detector and superconducting leads. According to the method, for an elementary memory cell at a fixed ambient temperature T, where T≤TC and TC is the critical temperature of the superconductor, after determining the values ​​of the magnetic fields of the input of the first (B0) and second (B1) magnetic vortex to the superconducting trap, a constant value of the external magnetic field, perpendicular to the surface of the superconducting trap, is established from the range (B0,B1).Next, the detector is exposed to a sequence of N current pulses with a period ô ranging from 10 ns to 1 s, after which the current amplitude ISW is determined, corresponding to a given number of pulse counts P•N on the counter, where P is any fixed number from the range (0,1). The procedure is repeated for all given values ​​of the control pulse amplitude IK. Next, a calibration curve ISW(IK) is prepared, from which the amplitude values ​​for the read (IODCZYT) and write (IZAPIS0 and IZAPIS1) pulses of logical information are read. Next, to write logical information "0" or "1" in an elementary superconducting memory cell, the detector is exposed to a single current pulse with an amplitude of IZAPIS0 or IZAPIS1, respectively. To read the logical information stored in an elementary superconducting memory cell, a single current pulse with an amplitude of IODCZYT is applied to the detector and the number of counts recorded by the counter is read.