Method for manufacturing ohmic contacts to silicon carbide
PL451496A1Pending Publication Date: 2026-09-21POLITECHN ODZKA
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Patent Information
- Application Number
- PL2025451496
- Authority / Receiving Office
- PL · PL
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-18
- Publication Date
- 2026-09-21
Abstract
The subject of the application is a method for manufacturing ohmic contacts for silicon carbide, which is characterized in that a silicon carbide substrate is exposed to a laser beam with a wavelength of 355 nm (UV laser) to 1064 nm (IR laser) and an energy density of 10 J / cm2 to 50 J / cm2, with a single pulse duration of 10 ns to 50 ns, a pulse frequency of 10 kHz to 100 kHz, and the number of repetitions is from 1 to 30, and a metallic layer is subsequently applied to the modified substrate.
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Citation Information
Patent Citations
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Method of manufacturing semiconductor device
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Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
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