SEMICONDUCTOR PROCESSING SYSTEM AND METHOD FOR PROCESSING SEMICONDUCTORS

Claims

1. A semiconductor processing system, characterized in that it includes: a device for processing semiconductors, including a first part of the chamber and a second part of the chamber, configured to move relative to the first part of the chamber between an open position and a closed position, wherein, when the second part of the chamber is in a closed position relative to the first part of the chamber, a microchamber is formed between the first and second parts of the chamber, configured to accommodate a semiconductor wafer therein, when the second part of the chamber is in an open position relative to the first part of the chamber, the semiconductor wafer can be removed or placed; wherein the first part of the chamber and / or the second part of the chamber have a groove formed by a recess from the inner wall of the corresponding part of the chamber, a first through hole passing externally through the corresponding part of the chamber for communicating with the first section of the groove, and a second through hole passing externally through the corresponding part of the chamber for communicating with the second section of the groove;wherein, when the second part of the chamber is in a closed position relative to the first part of the chamber and the semiconductor plate is placed between the first and second parts of the chamber, the surface of the semiconductor plate is adjacent to the inner wall forming a groove, wherein the groove, by means of blocking with the said surface of the semiconductor plate, forms a closed channel that communicates with the external environment through the first and second through holes; a wafer transfer device comprising a manipulator and a control unit, wherein, under the control of the control unit, the manipulator performs an operation of changing the angle of orientation of a semiconductor wafer located between the first and second parts of the chamber; wherein the operation of changing the angle of orientation includes: gripping the semiconductor wafer located between the first and second parts of the chamber, when the second part of the chamber is in an open position relative to the first part of the chamber, changing the angle of orientation of the semiconductor wafer and re-placing the semiconductor wafer with the changed angle between the first and second parts of the chamber, wherein the re-placed semiconductor wafer is rotated by a predetermined angle relative to the previous position; a drive and valve unit configured to, when the second part of the chamber is in a closed position relative to the first part of the chamber and the semiconductor wafer is placed between the first and second parts of the chamber, control the supply of a fluid through one of the first and second through holes into a closed channel, wherein the fluid entering the closed channel is configured to be directed along the channel, wherein the fluid contacts a portion of the surface of the semiconductor wafer, and the fluid that has passed along the surface of the semiconductor wafer exits and is extracted through the other of the first and second through holes.

2. A semiconductor processing system according to paragraph 1, characterized in that the groove is one, and the center of this groove is located at a given distance from the center of the inner wall on which it is located, and the groove is located in a local region of the said inner wall; or there are a plurality of grooves, each groove corresponds to one first through hole and one second through hole, different grooves are located in different areas of the corresponding inner wall, wherein the center of at least one of the grooves is spaced at a given distance from the center of the inner wall on which the given at least one groove is located.

3. A semiconductor processing system according to claim 2, characterized in that there is a plurality of grooves, the centers of which are spaced at a given distance from the center of the corresponding inner wall, wherein said plurality of grooves are uniformly distributed along the periphery of the center of the corresponding inner wall, There is one groove, the center of which coincides with the center of the corresponding inner wall.

4. A device for processing semiconductors according to claim 2, characterized in that each groove is made in the form of a spiral, wherein the first through hole is located in the central region of the spiral groove, and the second through hole is located in the peripheral region of the spiral groove.

5. A semiconductor processing system according to paragraph 1, characterized in that under the control of the control unit, the manipulator is also configured to load a semiconductor wafer, wherein the operation of loading the semiconductor wafer includes: grasping the semiconductor wafer from the outside by the manipulator and placing the semiconductor wafer between the first and second parts of the chamber, when the second part of the chamber is in an open position relative to the first part of the chamber; under the control of the control unit, the manipulator is also configured to unload a semiconductor wafer, wherein the operation of unloading the semiconductor wafer includes: grasping the semiconductor wafer by the manipulator from the semiconductor processing device when the second part of the chamber is in an open position relative to the first part of the chamber, and placing it outside.

6. A semiconductor processing system according to paragraph 1, characterized in that the control unit is designed with the possibility of setting a specified angle, wherein, under the control of the control unit, the manipulator is configured to perform one or more operations of changing the orientation angle of the semiconductor plate located between the first and second parts of the chamber.

7. A semiconductor processing system according to paragraph 2, characterized in that, using a manipulator, different semiconductor wafers are placed in the microchamber at different angles, the same groove corresponds to different areas of different semiconductor wafers, when processing each semiconductor wafer, the drive and valve unit is configured to ensure the passage of fluid through each groove and its extraction, whereby, based on the extracted fluid, analysis data is obtained for each semiconductor wafer, and by combining the analysis data of different semiconductor wafers, data on the homogeneity of the semiconductor wafers is obtained.

8. A semiconductor processing system according to paragraph 2, characterized in that a plurality of grooves are selected from a plurality of grooves, and when processing one semiconductor wafer, the drive and valve unit is configured to ensure the sequential passage of the same portion of fluid through the selected plurality of grooves; or at least one groove is selected from a plurality of grooves, and when processing different semiconductor wafers, the drive and valve unit is configured to ensure repeated passage of the same portion of fluid through the selected at least one groove.

9. A semiconductor processing system according to claim 1, characterized in that the fluid is a liquid or a gas, the fluid is a reactive fluid or an extractive fluid, the reactive fluid medium is configured to react with the surface of the semiconductor wafer with which it is in contact, the extracting fluid is configured to extract contaminants from the surface of the semiconductor wafer with which it is in contact.

10. A method for processing semiconductors in a semiconductor processing system, wherein the semiconductor processing system includes a semiconductor processing device, a wafer transfer device, and a drive and valve assembly, wherein the semiconductor processing device includes a first chamber part and a second chamber part configured to move relative to the first chamber part between an open position and a closed position, wherein when the second chamber part is in a closed position relative to the first chamber part, a microchamber is formed between the first and second chamber parts, configured to accommodate a semiconductor wafer therein, when the second chamber part is in an open position relative to the first chamber part, the semiconductor wafer can be removed or placed;wherein the first part of the chamber and / or the second part of the chamber have a groove formed by a recess from the inner wall of the corresponding part of the chamber, a first through hole passing externally through the corresponding part of the chamber for communication with the first section of the groove, and a second through hole passing externally through the corresponding part of the chamber for communication with the second section of the groove; wherein when the second part of the chamber is in a closed position relative to the first part of the chamber and the semiconductor wafer is placed between the first and second parts of the chamber, the surface of the semiconductor wafer is adjacent to the inner wall forming the groove, wherein the groove, by means of blocking with the said surface of the semiconductor wafer, forms a closed channel that communicates with the external environment through the first and second through holes; the plate transfer device includes a manipulator and a control unit, characterized in that the method for processing semiconductors includes: installing the second part of the chamber in an open position relative to the first part of the chamber; under the control of the control unit, the manipulator performs an operation of changing the angle of orientation of a semiconductor wafer located between the first and second parts of the chamber, wherein the operation of changing the angle of orientation includes: gripping the semiconductor wafer located between the first and second parts of the chamber, when the second part of the chamber is in an open position relative to the first part of the chamber, changing the angle of orientation of the semiconductor wafer and re-placing the semiconductor wafer with the changed angle between the first and second parts of the chamber, wherein the re-placed semiconductor wafer is rotated by a given angle relative to the previous position; installing the second part of the chamber in a closed position relative to the first part of the chamber; feeding a fluid into the groove through one of the first and second through holes, wherein the fluid moves along the closed channel to the other of the first and second through holes, and extracting the fluid from this other through hole.

11. The method for processing semiconductors according to paragraph 10, characterized in that it also includes: under the control of the control unit, the manipulator performs an operation of loading a semiconductor wafer, wherein the operation of loading a semiconductor wafer includes: the manipulator gripping the semiconductor wafer from the outside and placing the semiconductor wafer between the first and second parts of the chamber, when the second part of the chamber is in an open position relative to the first part of the chamber; under the control of the control unit, the manipulator performs an operation of unloading a semiconductor wafer, wherein the operation of unloading the semiconductor wafer includes: the manipulator gripping the semiconductor wafer from the semiconductor processing device when the second part of the chamber is in an open position relative to the first part of the chamber, and placing it outside.

12. The method for processing semiconductors according to paragraph 10, characterized in that the groove is one, and the center of this groove is located at a given distance from the center of the inner wall on which it is located, and the groove is located in a local region of the said inner wall; or there are a plurality of grooves, each groove corresponds to one first through hole and one second through hole, different grooves are located in different areas of the corresponding inner wall, and at least one of the grooves has a center that is spaced at a given distance from the center of the inner wall on which this at least one groove is located.

13. The method for processing semiconductors according to paragraph 10, characterized in that the control unit is designed with the possibility of setting a given angle, wherein, under the control of the control unit, the manipulator performs one or more operations to change the orientation angle of the semiconductor plate located between the first and second parts of the chamber.

14. The method for processing semiconductors according to paragraph 12, characterized in that, using a manipulator, different semiconductor wafers are placed in the microchamber at different angles, the same groove corresponds to different areas of different semiconductor wafers, When processing each semiconductor wafer, the drive and valve unit ensures that the fluid passes through each groove and is extracted, and based on the extracted fluid, analysis data is obtained for each semiconductor wafer, and by combining the analysis data of different semiconductor wafers, data on the homogeneity of the semiconductor wafers is obtained.

15. The method for processing semiconductors according to paragraph 12, characterized in that selecting a plurality of grooves from a plurality of grooves, and when processing one semiconductor wafer, the drive and valve assembly ensures the sequential passage of the same portion of fluid through the selected plurality of grooves; or at least one groove is selected from a plurality of grooves, and when processing different semiconductor wafers, the drive and valve unit ensures repeated passage of the same portion of fluid through the selected at least one groove.