Semiconductor processing device

Abstract

FIELD: semiconductor devices.SUBSTANCE: semiconductor processing device includes a first chamber portion and a second chamber portion. The first chamber portion has a first groove, and the second chamber portion has a second groove. When the second chamber portion is in a closed position relative to the first chamber portion and the silicon wafer is placed between the second chamber portion and the first chamber portion, the first groove and the second groove communicate and jointly form an edge channel, wherein the edge of the silicon wafer enters the edge channel. The second chamber portion or the first chamber portion has a first through hole, a second through hole and a third through hole, communicating the edge channel with the external environment, as well as an insulating protrusion located between the first through hole and the second through hole, wherein the extracting liquid entering the edge channel through the first through hole flows from the first through hole into the third through hole and flows out of the third through hole, and the extracting liquid entering the edge channel through the second through hole flows from the second through hole into the third through hole and flows out of the third through hole.EFFECT: it is possible to carry out high-precision and convenient extraction and detection of impurity contaminants at the edge of a silicon wafer.18 cl, 31 dwg

Description

[0001] Technical field

[0002] The present invention relates to the field of semiconductor technology, in particular to a semiconductor processing system and a semiconductor processing method.

[0003] Technology Level

[0004] As semiconductor sizes continue to shrink, impurities contained within the silicon wafer material itself become a factor requiring quality control and detection. However, current methods for detecting silicon wafer contaminants are limited to either extracting and detecting contaminants on the silicon wafer surface or performing destructive testing of the entire silicon wafer material.

[0005] Chinese Patent Application No. 201510836143.0 discloses a method for extracting and detecting contaminants from silicon wafers using a closed channel in a microchamber. The closed channel allows for the extraction and detection of only surface contaminants and metallic contaminants on the silicon wafer. However, some applications require separate extraction and detection of contaminants at the edge of the silicon wafer.

[0006] Chinese Patent Application No. 201811040519.7 discloses a method and device for processing the outer edge of a semiconductor silicon wafer using an edge micromachining space. However, in some applications, it is impossible or difficult to extract and detect ultra-trace impurities from the edge of the silicon wafer.

[0007] Therefore, there is a need for a new solution that would overcome the shortcomings of the existing state of the art.

[0008] It should be noted that the above description of the prior art is provided solely to facilitate a clear and complete explanation of the technical solution of this application and to facilitate understanding by those skilled in the art. It should not be assumed that the above technical solution is known to those skilled in the art, despite being described in the "Background of the Art" section of this application.

[0009] Essence of the invention

[0010] The object of the present invention is to provide a semiconductor processing device and a semiconductor processing method that can achieve high-precision and convenient extraction and detection of impurity contaminants at the edge of a silicon wafer.

[0011] To achieve the above-mentioned object, the present invention provides a semiconductor processing device, including: a first chamber portion; a second chamber portion, configured to move relative to the first chamber portion between an open position and a closed position. When the second chamber portion is in a closed position relative to the first chamber portion, a silicon wafer can be placed between the first chamber portion and the second chamber portion, and when the second chamber portion is in an open position relative to the first chamber portion, the silicon wafer can be removed or placed.The first chamber portion has a first groove formed on the surface of its inner wall, and the second chamber portion has a second groove formed on the surface of its inner wall, wherein when the second chamber portion is in a closed position relative to the first chamber portion and the silicon wafer is placed between the second chamber portion and the first chamber portion, the first groove and the second groove communicate and jointly form an edge channel, wherein the edge of the silicon wafer enters the edge channel.The second chamber portion or the first chamber portion has a first through hole, a second through hole and a third through hole, communicating the edge channel with the external environment, as well as an insulating protrusion located between the first through hole and the second through hole, wherein the first through hole and the second through hole are located adjacently, wherein the extracting liquid entering the edge channel through the first through hole flows from the first through hole into the third through hole and flows out of the third through hole, and the extracting liquid entering the edge channel through the second through hole flows from the second through hole into the third through hole and flows out of the third through hole.

[0012] According to another aspect, the present invention provides a method for processing semiconductors based on the above-mentioned semiconductor processing device, including: feeding a first portion of an extracting liquid through a first through hole into a first portion of an edge channel, feeding a second portion of the extracting liquid through a second through hole into a second portion of the edge channel, wherein, under the action of a tension force, the first portion of the extracting liquid and the second portion of the extracting liquid are capable of filling corresponding positions of the edge channel in which they are located;when the second part of the extracting liquid is located in the second section of the edge channel, advancing the first part of the extracting liquid to the third through hole by supplying the displacing gas through the first through hole into the first section of the edge channel and collecting the first part of the extracting liquid through the third through hole, after which supplying the third part of the liquid through the first through hole into the first section of the edge channel, wherein under the action of the tension force the third part of the liquid is capable of filling the corresponding position of the edge channel in which it is located, and then advancing the second part of the extracting liquid to the third through hole by supplying the displacing gas through the second through hole into the second section of the edge channel and collecting the second part of the extracting liquid through the third through hole;or, when the first portion of the extracting liquid is located in the first section of the edge channel, advancing the second portion of the extracting liquid to the third through hole by supplying the displacing gas through the second through hole into the second section of the edge channel and collecting the second portion of the extracting liquid through the third through hole, after which supplying the fourth portion of the liquid through the second through hole into the second section of the edge channel, wherein under the action of the tension force the fourth portion of the liquid is capable of filling the corresponding position of the edge channel in which it is located, and then advancing the first portion of the extracting liquid to the third through hole by supplying the displacing gas through the first through hole into the first section of the edge channel and collecting the first portion of the extracting liquid through the third through hole.

[0013] According to another aspect, the present invention provides a semiconductor processing device, including: a first chamber portion; a second chamber portion configured to move relative to the first chamber portion between an open position and a closed position, wherein when the second chamber portion is in the closed position relative to the first chamber portion, a silicon wafer can be placed between the first chamber portion and the second chamber portion, and when the second chamber portion is in the open position relative to the first chamber portion, the silicon wafer can be removed or placed; the first chamber portion has a first groove portion and a second groove portion formed on the surface of its inner wall, and the second chamber portion has a third groove portion and a fourth groove portion formed on the surface of its inner wall,wherein when the second chamber portion is in a closed position relative to the first chamber portion and the silicon wafer is placed between the second chamber portion and the first chamber portion, the first section of the groove and the third section of the groove communicate and jointly form the first section of the edge channel, and the second section of the groove and the fourth section of the groove communicate and jointly form the second section of the edge channel, wherein one section of the edge of the silicon wafer enters the first section of the edge channel, and the other section of the edge of the silicon wafer enters the second section of the edge channel; the second chamber portion or the first chamber portion has a first through hole and a third through hole communicating the first section of the edge channel with the external environment, as well as a second through hole and a fourth through hole communicating the second section of the edge channel with the external environment,wherein one of the first through hole and the third through hole serves as an inlet for the first section of the edge channel, and the other of the first through hole and the third through hole serves as an outlet for the first section of the edge channel, and one of the second through hole and the fourth through hole serves as an inlet for the second section of the edge channel, and the other of the second through hole and the fourth through hole serves as an outlet for the second section of the edge channel, wherein the extracting liquid is supplied through the corresponding inlet to the first section of the edge channel, flows through the first section of the edge channel and flows out through the corresponding outlet, and the extracting liquid is supplied through the corresponding inlet to the second section of the edge channel, flows through the second section of the edge channel and flows out through the corresponding outlet.

[0014] Compared with the existing prior art, in the present invention, the extraction liquid entering the edge channel through the first through hole flows from the first through hole to the third through hole and flows out from the third through hole, and the extraction liquid entering the edge channel through the second through hole flows from the second through hole to the third through hole and flows out from the third through hole, which can effectively carry out the extraction and detection of impurity contaminants on the edge of the silicon wafer.

[0015] It should be understood, therefore, that this summary is intended only to summarize some embodiments in order to provide a basic understanding of some aspects of the present invention. Therefore, the above-mentioned embodiments are merely examples and should not be construed as limiting the scope or idea of ​​the present invention in any way. The features, appearance, and advantages of the embodiments will become apparent from the following detailed description and the accompanying drawings, which illustrate, by way of example, the principles of some embodiments.

[0016] Description of drawings

[0017] The present invention will become more clearly understood from the following description and the accompanying drawings, in which like reference numerals designate like structural elements, and where:

[0018] Fig. 1 is a stereoscopic structural diagram of the first camera portion according to the first embodiment of the present invention;

[0019] Fig. 2 is a structural diagram from above of the first chamber portion according to the first embodiment of the present invention;

[0020] Fig. 3 is a stereoscopic structural diagram of the second camera portion according to the first embodiment of the present invention;

[0021] Fig. 4 is a structural diagram from above of the second chamber portion according to the first embodiment of the present invention;

[0022] Fig. 5 is an enlarged diagram of region A shown in Fig. 4;

[0023] Fig. 6 is a sectional diagram of a semiconductor processing device in one position according to the first embodiment of the present invention, in which the section line corresponds to the line EE shown in Fig. 4;

[0024] Fig. 7 is an enlarged diagram of the region B shown in Fig. 6;

[0025] Fig. 8 is an enlarged diagram of the region C shown in Fig. 6;

[0026] Fig. 9 is a sectional diagram of a semiconductor processing device in another one position according to the first embodiment of the present invention, in which the section line corresponds to the line FF shown in Fig. 4;

[0027] Fig. 10 is an enlarged diagram of the region D shown in Fig. 9;

[0028] Fig. 11 is a sectional diagram of a semiconductor processing device in another position according to the first embodiment of the present invention, in which the section line corresponds to the GG line shown in Fig. 4;

[0029] Fig. 12 is an enlarged diagram of the region H shown in Fig. 11;

[0030] Fig. 13 is a structural diagram of an edge channel and related structures in a semiconductor processing device according to the present invention;

[0031] Fig. 14-15 show the basic diagrams of the operation of the edge channel and the structures associated with it, shown in Fig. 13;

[0032] Fig. 16 is a flow chart of a method for processing semiconductors according to the first embodiment of the present invention;

[0033] Fig. 17 is a stereoscopic structural diagram of the first camera portion according to the second embodiment of the present invention;

[0034] Fig. 18 shows a structural diagram from above of the first chamber part shown in Fig. 17;

[0035] Fig. 19 is a stereoscopic structural diagram of the second camera portion according to the second embodiment of the present invention;

[0036] Fig. 20 shows a structural diagram from above of the second chamber part shown in Fig. 19;

[0037] Fig. 21 is an enlarged diagram of the region L shown in Fig. 20;

[0038] Fig. 22 is an enlarged diagram of the region M shown in Fig. 20;

[0039] Fig. 23 is a sectional diagram of a semiconductor processing device in one position according to a second embodiment of the present invention, in which the section line corresponds to the line XX shown in Fig. 20;

[0040] Fig. 24 is an enlarged diagram of the region N shown in Fig. 23;

[0041] Fig. 25 is a sectional diagram of a semiconductor processing device in one position according to a second embodiment of the present invention, in which the section line corresponds to the YY line shown in Fig. 20;

[0042] Fig. 26 is an enlarged diagram of the region O shown in Fig. 25;

[0043] Fig. 27 is a sectional diagram of a semiconductor processing device in one position according to a second embodiment of the present invention, in which the section line corresponds to the ZZ line shown in Fig. 20;

[0044] Fig. 28 is an enlarged diagram of the region P shown in Fig. 27;

[0045] Fig. 29-30 show the basic operation diagrams of the first section of the edge channel and the second section of the edge channel in the semiconductor processing device shown in Fig. 25;

[0046] Fig. 31 is a flow chart of a method for processing semiconductors according to a second embodiment of the present invention.

[0047] Specific embodiments

[0048] Below, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which show some, but not all, embodiments. In fact, the embodiments of the present invention can be realized in many different forms and should not be construed as limited to the embodiments set forth herein; on the contrary, these embodiments are presented in order to make the present invention exhaustive and complete, and to fully disclose its scope to those skilled in the art. For example, unless otherwise indicated, the designation of something as "first," "second," and the like should not be construed as indicating a specific order. Furthermore, something may be described as being above something (unless otherwise indicated) and actually be below something, and vice versa; similarly, something described as being on the left may be on the right, and vice versa. The same reference numeral in Fig. always denotes the same element.

[0049] First embodiment

[0050] The present invention provides a semiconductor processing apparatus that can efficiently and conveniently perform extraction and detection of impurity contaminants on the edge of a silicon wafer.

[0051] Fig. 6 is a sectional diagram of a semiconductor processing device according to a first embodiment of the present invention. As shown in Fig. 6, the semiconductor processing device 100 includes a first chamber portion 110 and a second chamber portion 120 configured to move relative to the first chamber portion 110 between an open position and a closed position. In the present embodiment, the first chamber portion 110 is an upper chamber portion, and the second chamber portion 120 is a lower chamber portion, wherein the lower chamber portion is driven up and down, thereby moving the second chamber portion 120 relative to the first chamber portion 110 between an open position and a closed position.In another embodiment, the first chamber portion 110 may also be a lower chamber portion, and the second chamber portion 120 may be an upper chamber portion, wherein the upper chamber portion may be driven up and down, thereby moving the second chamber portion 120 relative to the first chamber portion 110 between an open position and a closed position. The movement between the second chamber portion 120 and the first chamber portion 110 is relative, and the second chamber portion 120 can move or the first chamber portion 110 can move. When the second chamber portion 120 is in a closed position relative to the first chamber portion 110, the silicon wafer 200 can be placed between the first chamber portion 110 and the second chamber portion 120, and when the second chamber portion 120 is in an open position relative to the first chamber portion 110, the silicon wafer 200 can be removed or placed.

[0052] Fig. 1 is a stereoscopic block diagram of the first camera portion 110 according to one embodiment of the present invention; Fig. 2 is a top block diagram of the first camera portion 110 according to one embodiment of the present invention. Fig. 3 is a stereoscopic block diagram of the second camera portion 120 according to one embodiment of the present invention. Fig. 4 is a top block diagram of the second camera portion 120 according to one embodiment of the present invention; Fig. 5 is an enlarged diagram of the region A shown in Fig. 4. Fig. 6 is a sectional diagram of the semiconductor processing device at one position according to one embodiment of the present invention, in which the section line corresponds to the line EE shown in Fig. 4; Fig. 7 is an enlarged diagram of the region B shown in Fig. 6; Fig.8 is an enlarged diagram of the region C shown in Fig. 6. Fig. 9 is a sectional diagram of the semiconductor processing device in another position according to an embodiment of the present invention, in which the section line corresponds to the line FF shown in Fig. 4; Fig. 10 is an enlarged diagram of the region D shown in Fig. 9. Fig. 11 is a sectional diagram of the semiconductor processing device in yet another position according to an embodiment of the present invention, in which the section line corresponds to the line GG shown in Fig. 4. Fig. 12 is an enlarged diagram of the region H shown in Fig. 11. Fig. 13 is a structural diagram of the edge channel and related structures in the semiconductor processing device according to the present invention. Figs. 14-15 are schematic diagrams of the operation of the edge channel and related structures shown in Fig. 13. In Fig.16 is a flow chart of a method for processing semiconductors according to one embodiment of the present invention.

[0053] As shown in Fig. 1-12, the first chamber portion 110 has a first groove 111 formed on the surface of its inner wall, and the second chamber portion 120 has a second groove 121 formed on the surface of its inner wall. As shown in Fig. 7, 8 and 10, when the second chamber portion 120 is in a closed position relative to the first chamber portion 110 and the silicon wafer 200 is located between the second chamber portion 120 and the first chamber portion 110, the first groove 111 and the second groove 121 communicate and jointly form an edge channel 130, and the edge 210 of the silicon wafer 200 enters the edge channel 130.

[0054] In one embodiment, as shown in Fig. 3, 4, 5, 8, 12, the second chamber portion 120 has a first through hole 122, a second through hole 123 and a third through hole 124 that communicate the edge channel 130 with the external environment, as well as an insulating protrusion 125 located between the first through hole 122 and the second through hole 123. The first through hole 122 and the second through hole 123 are located adjacent. As shown in Fig. 13-15, the extracting liquid entering the edge channel 130 through the first through hole 122 flows from the first through hole 122 into the third through hole 124 and flows out of the third through hole 124, and the extracting liquid entering the edge channel 130 through the second through hole 123 flows from the second through hole 123 into the third through hole 124 and flows out of the third through hole 124.

[0055] As shown in Fig. 5, 8 and 13, the insulating projection 125 interrupts the edge channel 130, so that the edge channel 130 forms an open ring. The section of the edge channel between the first through hole 122 and the third through hole 124 is called the first section 131 of the edge channel, and the section of the edge channel between the second through hole 123 and the third through hole 124 is called the second section 132 of the edge channel.

[0056] In one embodiment, the first through hole 122 and the second through hole 123 are located on one side of the edge channel, and the third through hole 124 is located on the other side of the edge channel. Preferably, in Fig. 13, the length of the first portion 131 of the edge channel and the length of the second portion 132 of the edge channel are equal. Of course, in other embodiments, it can also be provided that the length of the first portion 131 of the edge channel and the length of the second portion 132 of the edge channel are not equal.

[0057] In one embodiment, the semiconductor processing device 100 can be used to extract contaminants on the edge 210 of the silicon wafer 200. Fig. 16 is a flow chart of a method for processing semiconductors 500 according to one embodiment of the present invention, wherein the method for processing semiconductors 500 uses the semiconductor processing device 100 to extract contaminants on the edge 210 of the silicon wafer 200. The method for processing semiconductors 500 includes the following steps.

[0058] Step 510: as shown in Fig. 14, feeding the first portion of the extracting liquid 141 through the first through hole 122 into the first portion 131 of the edge channel, feeding the second portion of the extracting liquid 142 through the second through hole 123 into the second portion 132 of the edge channel. Moreover, under the action of the tension force, the first portion of the extracting liquid 141 and the second portion of the extracting liquid 142 are able to fill the corresponding positions of the edge channel in which they are located.

[0059] Step 520: In one embodiment, as shown in Fig. 15, when the second part of the extracting liquid 142 is in the second portion 132 of the edge channel, advancing the first part of the extracting liquid 141 to the third through hole 124 by supplying the expelling gas through the first through hole 122 into the first portion 131 of the edge channel and collecting the first part of the extracting liquid 141 through the third through hole 124, after which supplying the third part of the liquid (not shown in Fig.) through the first through hole into the first portion 131 of the edge channel (to the same position as the first part of the extracting liquid 141 shown in Fig.12), wherein under the action of the tension force the third part of the liquid is able to fill the corresponding position of the edge channel in which it is located, and then the advancement of the second part of the extracting liquid 142 to the third through hole 124 by supplying the expelling gas through the second through hole 123 into the second section 132 of the edge channel and collecting the second part of the extracting liquid 142 through the third through hole 124. In another alternative embodiment, when the first part of the extracting liquid 141 is located in the first section 131 of the edge channel, the advancement of the second part of the extracting liquid 142 to the third through hole 124 by supplying the expelling gas through the second through hole 123 into the second section 132 of the edge channel and collecting the second part of the extracting liquid 142 through the third through hole 124, after which the supply of the fourth part of the liquid (not shown in Fig.) through the second through hole 123 into the second section 132 of the edge channel (to the same position as the second portion of the extracting liquid 142 shown in Fig. 12), whereby under the action of the tension force the fourth portion of the liquid is capable of filling the corresponding position of the edge channel in which it is located, and then advancing the first portion of the extracting liquid 141 to the third through hole 124 by feeding the expelling gas through the first through hole 122 into the first section 131 of the edge channel and collecting the first portion of the extracting liquid 141 through the third through hole 124.

[0060] Step 530: Conducting impurity detection based on the collected first portion of the extracting liquid, the collected second portion of the extracting liquid, or a mixture of the collected first portion of the extracting liquid and the collected second portion of the extracting liquid. That is, impurity detection can be performed either on the collected first portion of the extracting liquid or the collected second portion of the extracting liquid separately, or on a mixture obtained after mixing the collected first portion of the extracting liquid and the collected second portion of the extracting liquid. Said impurities may be metallic impurities, which may also be referred to as metallic impurities, and, of course, said impurities may also be other impurities.

[0061] Step 540: in one embodiment, after collecting the first portion of the extracting liquid 141 and the second portion of the extracting liquid 142, advancing the third portion of the liquid to the third through hole 124 by supplying the expelling gas through the first through hole 122 into the first portion 131 of the edge channel and collecting the waste liquid through the third through hole 124. In another embodiment, advancing the fourth portion of the liquid to the third through hole 124 by supplying the expelling gas through the second through hole 123 into the second portion 132 of the edge channel and collecting the waste liquid through the third through hole 124. In another embodiment, providing a negative pressure in the third through hole 124, thereby ensuring that the third portion of the liquid or the fourth portion of the liquid is collected in the waste liquid bottle.It should be understood that a third of a liquid and a fourth of a liquid cannot exist at the same time: either a third of a liquid or a fourth of a liquid.

[0062] To obtain a larger amount of extracting liquid, steps 510-520, 540 can be repeated, thereby sequentially passing several first portions of the extracting liquid through the first portion 131 of the edge channel and several second portions of the extracting liquid through the second portion 132 of the edge channel.

[0063] Before step 510, the semiconductor processing method 500 further includes:

[0064] feeding a gas mixture containing hydrogen fluoride through the first through hole 122 and the second through hole 123, respectively, into the first portion 131 of the edge channel and into the second portion 132 of the edge channel, and collecting the exhaust gas through the third through hole 124, to etch the edge of the silicon wafer 200, thereby facilitating the subsequent extraction of contaminants.

[0065] When the first portion of the extraction liquid 141 moves from the first through hole 122 to the third through hole 124, the first portion of the extraction liquid 141 flows through the edge of the portion of the silicon wafer 200 that enters the first portion 131 of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer 200. When the second portion of the extraction liquid 142 moves from the second through hole 123 to the third through hole 124, the second portion of the extraction liquid 142 flows through the edge of the portion of the silicon wafer 200 that enters the second portion 132 of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer 200. In particular, the extraction liquid can enter into a physical or chemical interaction with contaminants, thereby dissolving and removing them.

[0066] As shown in Fig. 14, after feeding the first portion of the extracting liquid 141 through the first through hole 122 into the first portion 131 of the edge channel, the first portion of the extracting liquid 141 is stopped in the first position, and after feeding the third portion of the liquid through the first through hole 122 into the first portion 131 of the edge channel, the third portion of the extracting liquid is stopped in the first position, wherein the first position is the position in which the first through hole 122 is located. After feeding the second portion of the extracting liquid 142 through the second through hole 123 into the second portion 132 of the edge channel, the second portion of the extracting liquid 142 is stopped in the second position, and after feeding the fourth portion of the liquid through the second through hole 123 into the second portion 132 of the edge channel, the fourth portion of the liquid is stopped in the second position, wherein the second position is the position in which the second through hole 123 is located.

[0067] The first portion of the extracting liquid 141 and the third portion of the liquid (if present) provide a liquid seal at the first position of the edge channel to prevent the expelling gas from passing through the first position when the expelling gas is supplied through the second through hole. The second portion of the extracting liquid 142 and the fourth portion of the liquid (if present) provide a liquid seal at the second position of the edge channel to prevent the gas from passing through the second position when the expelling gas is supplied through the first through hole.

[0068] If, in the process of advancing the first portion of the extracting liquid 141 to the third through hole 124 by feeding the expelling gas through the first through hole 122 into the first portion 131 of the edge channel, the second portion of the extracting liquid 142 is not in the second portion 132 of the edge channel, then, due to the lack of a sealing action of the second portion of the extracting liquid 142, a portion of the expelling gas may penetrate through the gap between the insulating projection 125 and the first chamber portion 110 into the second portion 132 of the edge channel, so that the advance speed of the first portion of the extracting liquid 141 cannot be accurately controlled, and this may even result in the first portion of the extracting liquid 141 failing to advance to the third through hole 124. If the first through hole 122 and the second through hole 123 are combined into one through hole, i.e.Since the edge channel 130 forms a closed ring, it is impossible to accurately control the movement of a portion of the extracting liquid along the edge channel 130.

[0069] In one embodiment, each of the first portion of the extraction liquid, the second portion of the extraction liquid, the third portion of the liquid, and the fourth portion of the liquid has a volume of less than 3 ml. For example, the volume of the first portion of the extraction liquid and the second portion of the extraction liquid can be 0.5 ml, so that the total volume of the first portion of the extraction liquid and the second portion of the extraction liquid is 1 ml, thereby facilitating subsequent detection and calculation. The volume of the first portion of the extraction liquid is equal to the volume of the second portion of the extraction liquid, wherein the first portion 131 of the edge channel and the second portion 132 of the edge channel are equal, which allows the first portion of the extraction liquid and the second portion of the extraction liquid to be mixed to calculate the contaminants on the edge 210 of the silicon wafer 200. In the present invention, the volume of each portion of the extraction liquid is very small, thereby increasing the concentration of contaminants and improving the detection limit.

[0070] In the present invention, the edge channel 130 is a closed channel, so that the extracting liquid entering the edge channel 130 through the first through hole 122 can flow only from the first through hole 122 to the third through hole 124 along the edge channel 130, and the extracting liquid entering the edge channel 130 through the second through hole 123 can flow only from the second through hole 123 to the third through hole 124 along the edge channel. The flow rate of the extracting liquid in the edge channel 130 is less than 5 ml / min, for example 3 ml / min. In the present invention, it is possible to control the uniform and slow movement of the first portion of the extraction liquid 141 and the second portion of the extraction liquid 142 along the edge channel 130 in order to provide sufficient time for the extraction liquid to interact with the contaminants at the edge of the silicon wafer.

[0071] As shown in Fig. 1, 2, 7, 8, the first chamber portion 110 has a fourth through hole 112 located opposite the third through hole 124, and a fifth through hole 113 located opposite the insulating projection 125. After the extraction liquid enters the third through hole 124, the expelling gas is supplied through the fourth through hole 112 to accelerate the output of the extraction liquid from the edge channel 130. When extracting contaminants at the edge 210 of the silicon wafer 200, the gas is supplied inward through the fifth through hole 113 to maintain a certain pressure to prevent the penetration of the expelling gas supplied through the first through hole 122, through the insulating projection 125 into the second portion 132 of the edge channel, and the expelling gas supplied through the second through hole 123, through the insulating protrusion 125 into the first section 131 of the marginal channel.

[0072] As shown in Fig. 7 and 13, the third through hole 124 includes a mating portion 1241 of the recess communicating with the edge channel 130, and a tubular portion 1242 of the through hole communicating with the mating portion of the recess, wherein the mating portion 1241 of the recess serves as a funnel-shaped inlet for the tubular portion 1242 of the through hole, which facilitates the collection of the extracting liquid and prevents the leaking extracting liquid from flowing through the third through hole 124.

[0073] Second embodiment

[0074] Fig. 23 is a sectional diagram of a semiconductor processing device according to a second embodiment of the present invention. As shown in Fig. 23, the semiconductor processing device 300 includes a first chamber portion 310 and a second chamber portion 320 configured to move relative to the first chamber portion 310 between an open position and a closed position. A more detailed description of the semiconductor processing device 300 can be found in the description of the semiconductor processing device 100, and identical parts thereof will not be repeated.

[0075] Fig. 17 is a stereoscopic block diagram of the first camera portion according to the second embodiment of the present invention. Fig. 18 is a top block diagram of the first camera portion according to the second embodiment of the present invention. Fig. 19 is a stereoscopic block diagram of the second camera portion according to the second embodiment of the present invention. Fig. 20 is a top block diagram of the second camera portion according to the second embodiment of the present invention. Fig. 21 is an enlarged diagram of the region L shown in Fig. 20. Fig. 22 is an enlarged diagram of the region M shown in Fig. 20. Fig. 23 is a sectional diagram of the semiconductor processing device at one position according to the second embodiment of the present invention, in which the section line corresponds to the line XX shown in Fig. 20; in Fig.24 is an enlarged diagram of the region N shown in Fig. 23; Fig. 25 is a sectional diagram of the semiconductor processing device in one position according to the second embodiment of the present invention, in which the section line corresponds to the YY line shown in Fig. 20; Fig. 26 is an enlarged diagram of the region O shown in Fig. 25; Fig. 27 is a sectional diagram of the semiconductor processing device in one position according to the second embodiment of the present invention, in which the section line corresponds to the ZZ line shown in Fig. 20; Fig. 28 is an enlarged diagram of the region P shown in Fig. 27; Figs. 29-30 are basic diagrams of the operation of the first edge channel portion and the second edge channel portion in the semiconductor processing device shown in Fig. 25;

[0076] As shown in Fig. 17-30, the first chamber portion 310 has a first groove portion 311 and a second groove portion 315 formed on the surface of its inner wall, and an annular protruding rib 314 located outside of the first groove portion 311 and the second groove portion 315. The second chamber portion 320 has a third groove portion 321 and a fourth groove portion 328 formed on the surface of its inner wall, a positioning portion 329 for a silicon wafer formed in the middle of the third groove portion 321 and the fourth groove portion 328, and an annular recess 341 located outside of the third groove portion 321 and the fourth groove portion 328. As shown in Fig.23-28, when the second chamber portion 320 is in a closed position relative to the first chamber portion 310 and the silicon wafer 200 is placed between the second chamber portion 320 and the first chamber portion 310, the annular protruding rib 314 and the annular recess 341 interact with each other, the positioning portion 329 for the silicon wafer positions the silicon wafer 200, the first portion 311 of the groove and the third portion 321 of the groove communicate and jointly form the first portion 331 of the edge channel, and the second portion 315 of the groove and the fourth portion 328 of the groove communicate and jointly form the second portion 332 of the edge channel. One portion of the edge of the silicon wafer 200 enters the first portion 331 of the edge channel, and the other portion of the edge of the silicon wafer 200 enters the second portion 332 of the edge channel. The positioning portion 329 for the silicon wafer does not prevent the flow of liquid through the first section 331 of the edge channel and the second section 332 of the edge channel.

[0077] In the second embodiment, the second chamber portion 320 has a first through hole 322 and a third through hole 324 communicating the first portion 331 of the edge channel with the external environment, as well as a second through hole 323 and a fourth through hole 326 communicating the second portion 332 of the edge channel with the external environment, a first insulating projection 325 located between the first through hole 322 and the second through hole 323, and a second insulating projection 327 located between the third through hole 324 and the fourth through hole 326. The first through hole 322 and the second through hole 323 are located adjacent, and the third through hole 324 and the fourth through hole 326 are located adjacent. The first insulating projection 325 and the second insulating projection 327 ensure that the first section 331 of the edge channel and the second section 332 of the edge channel do not form a closed ring.

[0078] In one embodiment, one of the first through hole 322 and the third through hole 324 serves as an inlet for the first portion 331 of the edge channel, and the other of the first through hole 322 and the third through hole 324 serves as an outlet for the first portion 331 of the edge channel, and one of the second through hole 323 and the fourth through hole 326 serves as an inlet for the second portion 332 of the edge channel, and the other of the second through hole 323 and the fourth through hole 326 serves as an outlet for the second portion of the edge channel.

[0079] As shown in Fig. 29-30, the extracting liquid is supplied through a corresponding inlet to the first portion 331 of the edge channel, flows through the first portion 331 of the edge channel and flows out through a corresponding outlet, and the extracting liquid is supplied through a corresponding inlet to the second portion 332 of the edge channel, flows through the second portion 332 of the edge channel and flows out through a corresponding outlet. In the preferred embodiments shown in Fig. 29-30, the first through hole 322 serves as an inlet for the first portion 331 of the edge channel, the third through hole 324 serves as an outlet for the first portion 331 of the edge channel, the fourth through hole 326 serves as an inlet for the second portion 332 of the edge channel, and the second through hole 323 serves as an outlet for the second portion 332 of the edge channel.In other embodiments, the third through-hole 324 may serve as an inlet for the first portion 331 of the edge channel, and the second through-hole 323 may serve as an inlet for the second portion 332 of the edge channel.

[0080] Preferably, the through hole serving as an inlet for the first portion 331 of the edge channel is located adjacent to the through hole serving as an outlet for the second portion 332 of the edge channel, and the through hole serving as an outlet for the first portion 331 of the edge channel is located adjacent to the through hole serving as an inlet for the second portion 332 of the edge channel, due to which the flow direction of the extracting liquid in the first portion 331 of the edge channel and the flow direction of the extracting liquid in the second portion 332 of the edge channel can be either clockwise or counterclockwise, which makes it possible to more accurately and easily control the extracting liquid.

[0081] Preferably, the length of the first edge channel section 331 and the length of the second edge channel section 332 are equal. Of course, in other embodiments, it may also be provided that the length of the first edge channel section 331 and the length of the second edge channel section 332 are not equal.

[0082] In one embodiment, the semiconductor processing device 300 can be used to extract contaminants at the edge of the silicon wafer 200. Fig. 31 is a flow chart of a method for processing semiconductors 600 according to a second embodiment of the present invention, wherein this method for processing semiconductors 600 uses the semiconductor processing device 300 to extract contaminants at the edge of the silicon wafer 200. The method for processing semiconductors 600 includes the following steps.

[0083] Step 610: as shown in Fig. 29, feeding the first portion of the extracting liquid 351 through the corresponding inlet into the first portion 331 of the edge channel, feeding the second portion of the extracting liquid 352 through the corresponding inlet into the second portion 332 of the edge channel, wherein, under the action of the tension force, the first portion of the extracting liquid 351 and the second portion of the extracting liquid 352 are able to fill the corresponding positions of the corresponding portions of the edge channel in which they are located.

[0084] Step 620: in one embodiment, as shown in Fig. 30, when the second portion of the extracting liquid 352 is in the second portion 332 of the edge channel, advancing the first portion of the extracting liquid 351 to the corresponding outlet by supplying the expelling gas through the corresponding inlet to the first portion 331 of the edge channel and collecting the first portion of the extracting liquid 351 through the corresponding outlet, followed by supplying the third portion of the liquid through the corresponding inlet to the first portion of the edge channel, wherein under the action of the tension force the third portion of the liquid is able to fill the corresponding position of the first portion of the edge channel in which it is located, and then advancing the second portion of the extracting liquid 352 to the corresponding outlet by supplying the expelling gas through the corresponding inlet to the second portion 332 of the edge channel and collecting the second portion of the extracting liquid 352 through the corresponding outlet.In another alternative embodiment, when the first portion of the extracting liquid 351 is located in the first section 331 of the edge channel, the second portion of the extracting liquid 352 is advanced to the corresponding outlet by supplying the displacing gas through the corresponding inlet into the second section 332 of the edge channel and collecting the second portion of the extracting liquid 352 through the corresponding outlet, followed by supplying the fourth portion of the liquid through the corresponding inlet into the second section 332 of the edge channel, wherein under the action of the tension force the fourth portion of the liquid is capable of filling the corresponding position of the second section 332 of the edge channel in which it is located, and then advancing the first portion of the extracting liquid 351 to the corresponding outlet by supplying the displacing gas through the corresponding inlet into the first section 331 of the edge channel and collecting the first portion of the extracting liquid through the corresponding outlet. The said displacing gas may be nitrogen or another gas.

[0085] Step 630: Performing impurity detection based on the collected first portion of the extracting liquid 351, or the collected second portion of the extracting liquid 352, or a mixture of the collected first portion of the extracting liquid 351 and the collected second portion of the extracting liquid 352. That is, the impurity detection can be performed either on the collected first portion of the extracting liquid or the collected second portion of the extracting liquid separately, or on a mixture obtained after mixing the collected first portion of the extracting liquid and the collected second portion of the extracting liquid. Said impurities may be metallic impurities, which may also be referred to as metallic impurities, and, of course, said impurities may also be other impurities.

[0086] Step 640: in one embodiment, after collecting the first portion of the extracting liquid 351 and the second portion of the extracting liquid 352, moving the third portion of the liquid to the corresponding outlet by supplying the expelling gas through the corresponding inlet into the first portion of the edge channel and collecting the waste liquid through the corresponding outlet, or moving the fourth portion of the liquid to the corresponding outlet by supplying the expelling gas through the corresponding inlet into the second portion of the edge channel and collecting the waste liquid through the corresponding outlet. It should be understood that the third portion of the liquid and the fourth portion of the liquid cannot exist simultaneously: either the third portion of the liquid or the fourth portion of the liquid.

[0087] To obtain a larger amount of extracting liquid, steps 610-620, 640 can be repeated, thus sequentially passing several first portions of the extracting liquid 351 through the first section 331 of the edge channel and several second portions of the extracting liquid 352 through the second section 332 of the edge channel.

[0088] Before step 610, the semiconductor processing method 600 further includes:

[0089] Feeding a gas mixture containing hydrogen fluoride into the first section 331 of the edge channel and the second section 332 of the edge channel, respectively, and collecting the exhaust gas through a corresponding outlet, to etch the edge of the silicon wafer 200, thereby facilitating subsequent contaminant extraction. Said gas mixture containing hydrogen fluoride chemically reacts with the natural oxide layer on the surface of the edge of the silicon wafer.

[0090] When the first part of the extraction liquid 351 moves from the inlet of the first portion 331 of the edge channel to the corresponding outlet, the first part of the extraction liquid 351 flows through the edge of the portion of the silicon wafer 200 that enters the first portion 331 of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer 200. When the second part of the extraction liquid 352 moves from the inlet of the second portion 332 of the edge channel to the corresponding outlet, the second part of the extraction liquid 352 flows through the edge of the portion of the silicon wafer 200 that enters the second portion 332 of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer 200. In particular, the extraction liquid can enter into a physical or chemical interaction with contaminants, thereby dissolving and removing them.

[0091] As shown in Fig. 29, after feeding the first portion of the extracting liquid 351 through the corresponding inlet into the first portion 331 of the edge channel, the first portion of the extracting liquid is stopped in the first position, and after feeding the third portion of the liquid through the corresponding inlet into the first portion 331 of the edge channel, the third portion of the extracting liquid is stopped in the first position, wherein the first position is the position in which the inlet of the first portion 331 of the edge channel is located. After feeding the second portion of the extracting liquid 352 through the corresponding inlet into the second portion 332 of the edge channel, the second portion of the extracting liquid is stopped in the second position, and after feeding the fourth portion of the liquid through the corresponding inlet into the second portion 332 of the edge channel, the fourth portion of the liquid is stopped in the second position, wherein the second position is the position in which the inlet of the second portion of the edge channel is located.

[0092] The first portion of the extracting liquid 351 and the third portion of the liquid (if present) provide a liquid seal at the first position of the first portion of the edge channel to prevent gas from passing through the first position; the second portion of the extracting liquid 352 and the fourth portion of the liquid (if present) provide a liquid seal at the second position of the second portion of the edge channel to prevent gas from passing through the second position.

[0093] If, in the process of advancing the first portion of the extracting liquid 351 to the corresponding outlet by feeding the expelling gas through the corresponding inlet to the first portion 331 of the edge channel, the second portion of the extracting liquid 352 is not in the second portion 332 of the edge channel, then, due to the lack of a sealing action of the second portion of the extracting liquid 352, a portion of the expelling gas may penetrate through the gap between the first insulating projection 325 and the first chamber portion 110 into the second portion 352 of the edge channel, so that the advancing speed of the first portion of the extracting liquid 351 cannot be accurately controlled, and this may even lead to the fact that the first portion of the extracting liquid 351 cannot advance to the corresponding outlet or the advancing speed cannot be accurately controlled.

[0094] In one embodiment, each of the first portion of the extraction liquid, the second portion of the extraction liquid, the third portion of the liquid, and the fourth portion of the liquid has a volume of less than 3 ml. For example, the volume of the first portion of the extraction liquid and the second portion of the extraction liquid can be 0.5 ml, so that the total volume of the first portion of the extraction liquid and the second portion of the extraction liquid is 1 ml, thereby facilitating subsequent detection and calculation. The volume of the first portion of the extraction liquid is equal to the volume of the second portion of the extraction liquid, wherein the first portion 331 of the edge channel and the second portion 332 of the edge channel are located, which allows the first portion of the extraction liquid and the second portion of the extraction liquid to be mixed to calculate the contaminants on the edge 210 of the silicon wafer 200.In the present invention, the volume of each portion of the extraction liquid is very small, thereby increasing the contaminant concentration and improving the detection limit, ensuring highly accurate detection of ultra-trace elements. The first portion of the extraction liquid and the second portion of the extraction liquid can be dosed to a predetermined volume using a dosing loop, i.e., the volume of the first portion of the extraction liquid and the second portion of the extraction liquid can be precisely controlled using the dosing loop.

[0095] In the present invention, the first portion of the edge channel and the second portion of the edge channel are closed channels, so that the extraction liquid entering the first portion 331 of the edge channel can only flow from the inlet to the corresponding outlet along the first portion 331 of the edge channel, and the extraction liquid entering the second portion 332 of the edge channel can only flow from the inlet to the corresponding outlet along the second portion of the edge channel. The flow rate of the extraction liquid in each portion of the edge channel is from 3 to 20 ml / min, for example, 3 ml / min, 5 ml / min. In the present invention, it is possible to control the uniform and slow movement of the first portion of the extraction liquid 351 and the second portion of the extraction liquid 352 along the first portion of the edge channel and the second portion of the edge channel to ensure sufficient time for the extraction liquid to interact with the contaminants on the edge of the silicon wafer.

[0096] As shown in Figs. 23 and 24, the inner wall surface of the first chamber portion 110 contacts the first insulating protrusion 325 and the second insulating protrusion 327, which allows the first portion of the edge channel to be completely isolated from the second portion of the edge channel. However, even in this case, gas can still pass through the gaps between the first insulating protrusion 325 and the second insulating protrusion 327 and the inner wall surface of the first chamber portion 110, therefore, before the extraction liquid advances in one portion of the edge channel, it is necessary to seal the other portion of the edge channel with liquid.

[0097] Thus, the extraction and detection of impurity contaminants on the edge of the silicon wafer can be carried out efficiently and conveniently.

[0098] When combined with the accompanying drawings and descriptions of specific embodiments of the present invention, the details of the present invention can be more clearly understood. However, the specific embodiments of the present invention described herein are intended only to explain the essence of the invention and should in no way be construed as limiting the present invention. In light of the above description of the present invention, one skilled in the art can develop any possible modifications based on the present invention, which should be considered as falling within the scope of the present invention. It should be noted that when an element is said to be "disposed" on another element, it may be located directly on the other element, or there may also be an element located in the middle.When an element is considered to be "connected" to another element, it may be directly connected to the other element, or there may also be an element located in the middle at the same time. The terms "installed," "communicated," and "connected" should be understood in a broad sense, for example, as a mechanical or electrical connection, as well as as an internal communication between two elements; they may be a direct connection or an indirect connection through an intermediate medium, and those skilled in the art may understand the specific meanings of the aforementioned terms according to the specific circumstances. The terms "vertically," "horizontally," "above," "below," "left," "right," and similar expressions used in this description are intended for illustrative purposes only and are not the only embodiments.

[0099] Unless otherwise defined, all technical and scientific terms used herein have the same meanings as commonly understood by those skilled in the art of this application. The terms used in this description are intended only to illustrate particular embodiments and are not intended to limit the present application. The terms "and / or" used in this description include any and all combinations of one or more related listed elements.

[0100] Many modifications and other embodiments of the present invention will become apparent to those skilled in the art, having relevant industry knowledge and some of the background data. Therefore, it should be understood that the present invention is not limited to the specific embodiments disclosed, but also covers other embodiments modified within the scope of the appended claims. Furthermore, although the above description and the corresponding drawings describe the implementation of specific embodiments of elements and functions, various combinations of elements and functions realized by substitution are also covered within the scope of the appended claims. The appended claims also include combinations of elements and functions other than those expressly described above. Although specific terms are used herein, they are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A device for processing semiconductors, characterized in that it includes the first chamber part; a second chamber portion configured to move relative to the first chamber portion between an open position and a closed position, wherein when the second chamber portion is in a closed position relative to the first chamber portion, the silicon wafer can be placed between the first chamber portion and the second chamber portion, and when the second chamber portion is in an open position relative to the first chamber portion, the silicon wafer can be removed or placed; the first chamber portion has a first groove formed on the surface of its inner wall, and the second chamber portion has a second groove formed on the surface of its inner wall, wherein, when the second chamber portion is in a closed position relative to the first chamber portion and the silicon wafer is placed between the second chamber portion and the first chamber portion, the first groove and the second groove communicate and jointly form an edge channel, wherein the edge of the silicon wafer enters the edge channel, The second chamber portion or the first chamber portion has a first through hole, a second through hole and a third through hole communicating the edge channel with the external environment, as well as an insulating protrusion located between the first through hole and the second through hole, wherein the first through hole and the second through hole are located adjacently, wherein the extracting liquid entering the edge channel through the first through hole flows from the first through hole into the third through hole and flows out of the third through hole, and the extracting liquid entering the edge channel through the second through hole flows from the second through hole into the third through hole and flows out of the third through hole.

2. The semiconductor processing device according to claim 1, characterized in that the insulating projection interrupts the edge channel so that the edge channel forms an open ring, wherein the portion of the edge channel between the first through hole and the third through hole is called the first portion of the edge channel, and the portion of the edge channel between the second through hole and the third through hole is called the second portion of the edge channel.

3. A device for processing semiconductors according to claim 2, characterized in that the first through hole and the second through hole are located on one side of the edge channel, and the third through hole is located on the other side of the edge channel, wherein the length of the first section of the edge channel and the length of the second section of the edge channel are equal.

4. A device for processing semiconductors according to paragraph 2, characterized in that the following operations are performed during the extraction of contaminants at the edge of the silicon wafer: feeding a first portion of the extracting liquid through a first through hole into a first section of the edge channel, feeding a second portion of the extracting liquid through a second through hole into a second section of the edge channel, wherein, under the action of the tension force, the first portion of the extracting liquid and the second portion of the extracting liquid are capable of filling the corresponding positions of the edge channel in which they are located; when the second part of the extracting liquid is located in the second section of the edge channel, advancing the first part of the extracting liquid to the third through hole by supplying the displacing gas through the first through hole into the first section of the edge channel and collecting the first part of the extracting liquid through the third through hole, after which supplying the third part of the liquid through the first through hole into the first section of the edge channel, wherein under the action of the tension force the third part of the liquid is capable of filling the corresponding position of the edge channel in which it is located, and then advancing the second part of the extracting liquid to the third through hole by supplying the displacing gas through the second through hole into the second section of the edge channel and collecting the second part of the extracting liquid through the third through hole;or, when the first portion of the extracting liquid is located in the first section of the edge channel, advancing the second portion of the extracting liquid to the third through hole by supplying the displacing gas through the second through hole into the second section of the edge channel and collecting the second portion of the extracting liquid through the third through hole, after which supplying the fourth portion of the liquid through the second through hole into the second section of the edge channel, wherein under the action of the tension force the fourth portion of the liquid is capable of filling the corresponding position of the edge channel in which it is located, and then advancing the first portion of the extracting liquid to the third through hole by supplying the displacing gas through the first through hole into the first section of the edge channel and collecting the first portion of the extracting liquid through the third through hole.

5. The semiconductor processing device according to claim 4, characterized in that, when the first portion of the extraction liquid moves from the first through hole to the third through hole, the first portion of the extraction liquid flows through the edge of the portion of the silicon wafer entering the first section of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer, when the second portion of the extraction liquid moves from the second through hole to the third through hole, the second portion of the extraction liquid flows through the edge of the portion of the silicon wafer entering the second section of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer, conducting contamination detection based on the collected first portion of the extracting liquid, or the collected second portion of the extracting liquid, or a mixture of the collected first portion of the extracting liquid and the collected second portion of the extracting liquid.

6. A device for processing semiconductors according to paragraph 4, characterized in that after feeding the first portion of the extracting liquid through the first through hole into the first section of the edge channel, the first portion of the extracting liquid is stopped in the first position, and after feeding the third portion of the liquid through the first through hole into the first section of the edge channel, the third portion of the extracting liquid is stopped in the first position, wherein the first position is the position in which the first through hole is located, after feeding the second portion of the extracting liquid through the second through hole into the second section of the edge channel, the second portion of the extracting liquid is stopped in the second position, and after feeding the fourth portion of the liquid through the second through hole into the second section of the edge channel, the fourth portion of the liquid is stopped in the second position, wherein the second position is the position in which the second through hole is located, wherein the first portion of the extracting liquid and the third portion of the liquid provide a liquid seal at the first position of the edge channel to prevent gas from passing through the first position; the second portion of the extracting liquid and the fourth portion of the liquid provide a liquid seal at the second position of the edge channel to prevent gas from passing through the second position.

7. A device for processing semiconductors according to claim 4, characterized in that each of the first part of the extracting liquid, the second part of the extracting liquid, the third part of the liquid and the fourth part of the liquid has a volume of less than 3 ml, the volume of the first part of the extracting liquid is equal to the volume of the second part of the extracting liquid, wherein the edge channel is a closed channel, so that the extracting liquid entering the edge channel through the first through hole can flow only from the first through hole into the third through hole along the edge channel, and the extracting liquid entering the edge channel through the second through hole can flow only from the second through hole into the third through hole along the edge channel, after collecting the first portion of the extracting liquid and the second portion of the extracting liquid, moving the third portion of the liquid to the third through hole by supplying the expelling gas through the first through hole into the first portion of the edge channel and collecting the waste liquid through the third through hole, or moving the fourth portion of the liquid to the third through hole by supplying the expelling gas through the second through hole into the second portion of the edge channel and collecting the waste liquid through the third through hole, or providing a negative pressure in the third through hole, thereby ensuring the collection of the third portion of the liquid or the fourth portion of the liquid in the waste liquid bottle.

8. A device for processing semiconductors according to paragraph 4, characterized in that before feeding the first portion of the extracting liquid and the second portion of the extracting liquid into the edge channel, first feeding a gas mixture containing hydrogen fluoride through the first through hole and the second through hole, respectively, into the first section of the edge channel and into the second section of the edge channel, and collecting the exhaust gas through the third through hole, the first chamber portion or the second chamber portion has a fourth through hole located opposite the third through hole, and after the extracting liquid enters the third through hole, the expelling gas is supplied through the fourth through hole to accelerate the exit of the extracting liquid from the edge channel, the first chamber portion or the second chamber portion has a fifth through hole located opposite the insulating protrusion, and when extracting contaminants at the edge of the silicon wafer, gas is supplied inside through the fifth through hole to maintain a certain pressure, the third through hole includes a mating portion of the recess communicating with the edge channel and a tubular portion of the through hole communicating with the mating portion of the recess, wherein the mating portion of the recess serves as a funnel-shaped entrance for the tubular portion of the through hole.

9. A method for processing semiconductors based on a semiconductor processing device according to any of paragraphs 1-8, characterized in that it includes: feeding a first portion of the extracting liquid through the first through hole into the first section of the marginal channel, feeding a second portion of the extracting liquid through the second through hole into the second section of the marginal channel, wherein, under the action of the tension force, the first portion of the extracting liquid and the second portion of the extracting liquid are capable of filling the corresponding positions of the marginal channel in which they are located; when the second part of the extracting liquid is located in the second section of the edge channel, advancing the first part of the extracting liquid to the third through hole by supplying the displacing gas through the first through hole into the first section of the edge channel and collecting the first part of the extracting liquid through the third through hole, after which supplying the third part of the liquid through the first through hole into the first section of the edge channel, wherein under the action of the tension force the third part of the liquid is capable of filling the corresponding position of the edge channel in which it is located, and then advancing the second part of the extracting liquid to the third through hole by supplying the displacing gas through the second through hole into the second section of the edge channel and collecting the second part of the extracting liquid through the third through hole;or, when the first portion of the extracting liquid is located in the first section of the edge channel, advancing the second portion of the extracting liquid to the third through hole by supplying the displacing gas through the second through hole into the second section of the edge channel and collecting the second portion of the extracting liquid through the third through hole, after which supplying the fourth portion of the liquid through the second through hole into the second section of the edge channel, wherein under the action of the tension force the fourth portion of the liquid is capable of filling the corresponding position of the edge channel in which it is located, and then advancing the first portion of the extracting liquid to the third through hole by supplying the displacing gas through the first through hole into the first section of the edge channel and collecting the first portion of the extracting liquid through the third through hole.

10. The method for processing semiconductors according to paragraph 9, characterized in that it additionally includes: conducting contamination detection based on the collected first portion of the extracting liquid, or the collected second portion of the extracting liquid, or a mixture of the collected first portion of the extracting liquid and the collected second portion of the extracting liquid, wherein when the first portion of the extraction liquid moves from the first through hole to the third through hole, the first portion of the extraction liquid flows through the edge of the portion of the silicon wafer entering the first portion of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer, and when the second portion of the extraction liquid moves from the second through hole to the third through hole, the second portion of the extraction liquid flows through the edge of the portion of the silicon wafer entering the second portion of the edge channel, thereby ensuring the extraction of contaminants on this portion of the edge of the silicon wafer, After collecting the first portion of the extracting liquid and the second portion of the extracting liquid, the method for processing semiconductors further includes: moving a third portion of the liquid toward the third through hole by supplying a displacing gas through the first through hole into the first portion of the edge channel and collecting the waste liquid through the third through hole, or moving a fourth portion of the liquid toward the third through hole by supplying a displacing gas through the second through hole into the second portion of the edge channel and collecting the waste liquid through the third through hole, or providing a negative pressure in the third through hole, thereby ensuring the collection of a third portion of the liquid or a fourth portion of the liquid in a bottle for waste liquid, wherein before feeding the first portion of the extracting liquid and the second portion of the extracting liquid into the edge channel, the method for processing semiconductors additionally includes: feeding a gas mixture containing hydrogen fluoride through the first through hole and the second through hole, respectively, into the first section of the edge channel and into the second section of the edge channel, and collecting the exhaust gas through the third through hole.

11. A device for processing semiconductors, characterized in that it includes: the first chamber part; a second chamber portion configured to move relative to the first chamber portion between an open position and a closed position, wherein when the second chamber portion is in a closed position relative to the first chamber portion, the silicon wafer can be placed between the first chamber portion and the second chamber portion, and when the second chamber portion is in an open position relative to the first chamber portion, the silicon wafer can be removed or placed; the first chamber portion has a first groove section and a second groove section formed on the surface of its inner wall, and the second chamber portion has a third groove section and a fourth groove section formed on the surface of its inner wall, wherein when the second chamber portion is in a closed position relative to the first chamber portion and the silicon wafer is placed between the second chamber portion and the first chamber portion, the first groove section and the third groove section communicate and jointly form the first section of the edge channel, and the second groove section and the fourth groove section communicate and jointly form the second section of the edge channel, wherein one section of the edge of the silicon wafer enters the first section of the edge channel, and the other section of the edge of the silicon wafer enters the second section of the edge channel, the second chamber portion or the first chamber portion has a first through hole and a third through hole communicating the first section of the marginal channel with the external environment, as well as a second through hole and a fourth through hole communicating the second section of the marginal channel with the external environment, wherein one of the first through hole and the third through hole serves as an inlet for the first section of the marginal channel, and the other of the first through hole and the third through hole serves as an outlet for the first section of the marginal channel, and one of the second through hole and the fourth through hole serves as an inlet for the second section of the marginal channel, and the other of the second through hole and the fourth through hole serves as an outlet for the second section of the marginal channel, wherein the extracting liquid is fed through the corresponding inlet into the first section of the marginal channel, flows through the first section of the marginal channel and flows out through the corresponding outlet, and the extracting liquid is fed through the corresponding inlet into the second section of the marginal channel, flows through the second section of the marginal channel and flows out through the corresponding outlet.

12. A device for processing semiconductors according to paragraph 11, characterized in that the first through hole is located adjacent to the second through hole, and a first insulating projection is provided between the first through hole and the second through hole, and the third through hole is located adjacent to the fourth through hole, and a second insulating projection is provided between the third through hole and the fourth through hole, wherein the first insulating projection and the second insulating projection ensure that the first section of the edge channel and the second section of the edge channel do not form a closed ring, a through hole serving as an entrance for the first section of the marginal canal is located adjacent to a through hole serving as an exit for the second section of the marginal canal, a through hole serving as an outlet for the first section of the marginal canal is located adjacent to a through hole serving as an inlet for the second section of the marginal canal.

13. A device for processing semiconductors according to paragraph 12, characterized in that the following operations are performed during the extraction of contaminants at the edge of the silicon wafer: feeding a first portion of the extracting liquid through a corresponding inlet into the first section of the marginal channel, feeding a second portion of the extracting liquid through a corresponding inlet into the second section of the marginal channel, whereby, under the action of the tension force, the first portion of the extracting liquid and the second portion of the extracting liquid are capable of filling the corresponding positions of the corresponding sections of the marginal channel in which they are located; when the second portion of the extracting liquid is located in the second section of the edge channel, advancing the first portion of the extracting liquid to the corresponding outlet by supplying a displacing gas through the corresponding inlet into the first section of the edge channel and collecting the first portion of the extracting liquid through the corresponding outlet, after which supplying a third portion of the liquid through the corresponding inlet into the first section of the edge channel, wherein under the action of the tension force the third portion of the liquid is capable of filling the corresponding position of the first section of the edge channel in which it is located, and then advancing the second portion of the extracting liquid to the corresponding outlet by supplying a displacing gas through the corresponding inlet into the second section of the edge channel and collecting the second portion of the extracting liquid through the corresponding outlet; or, when the first part of the extracting liquid is located in the first section of the edge channel, moving the second part of the extracting liquid to the corresponding outlet by feeding the displacing gas through the corresponding inlet into the second section of the edge channel and collecting the second part of the extracting liquid through the corresponding outlet, after which feeding the fourth part of the liquid through the corresponding inlet into the second section of the edge channel, wherein under the action of the tension force the fourth part of the liquid is capable of filling the corresponding position of the second section of the edge channel in which it is located, and then moving the first part of the extracting liquid to the corresponding outlet by feeding the displacing gas through the corresponding inlet into the first section of the edge channel and collecting the first part of the extracting liquid through the corresponding outlet.

14. A device for processing semiconductors according to paragraph 13, characterized in that when the first portion of the extracting liquid moves from the inlet of the first portion of the edge channel to the corresponding outlet, the first portion of the extracting liquid flows through the edge of the portion of the silicon wafer entering the first portion of the edge channel, thereby ensuring the extraction of contaminants on that portion of the edge of the silicon wafer, when the second portion of the extracting liquid moves from the inlet of the second portion of the edge channel to the corresponding outlet, the second portion of the extracting liquid flows through the edge of the portion of the silicon wafer entering the second portion of the edge channel, thereby ensuring the extraction of contaminants on that portion of the edge of the silicon wafer, conducting contamination detection based on the collected first portion of the extracting liquid, or the collected second portion of the extracting liquid, or a mixture of the collected first portion of the extracting liquid and the collected second portion of the extracting liquid.

15. A device for processing semiconductors according to paragraph 13, characterized in that after feeding the first portion of the extracting liquid through the corresponding inlet into the first section of the marginal channel, the first portion of the extracting liquid is stopped in the first position, and after feeding the third portion of the liquid through the corresponding inlet into the first section of the marginal channel, the third portion of the extracting liquid is stopped in the first position, wherein the first position is the position in which the inlet of the first section of the marginal channel is located, after feeding the second portion of the extracting liquid through the corresponding inlet into the second section of the marginal channel, the second portion of the extracting liquid is stopped in the second position, and after feeding the fourth portion of the liquid through the corresponding inlet into the second section of the marginal channel, the fourth portion of the liquid is stopped in the second position, wherein the second position is the position in which the inlet of the second section of the marginal channel is located, wherein the first portion of the extracting liquid and the third portion of the liquid provide a liquid seal at the first position of the first portion of the edge channel to prevent gas from passing through the first position; the second portion of the extracting liquid and the fourth portion of the liquid provide a liquid seal at the second position of the second portion of the edge channel to prevent gas from passing through the second position.

16. A device for processing semiconductors according to paragraph 13, characterized in that each of the first part of the extracting liquid, the second part of the extracting liquid, the third part of the liquid and the fourth part of the liquid has a volume of less than 3 ml, the first portion of the extracting liquid may be dosed using a dosing loop so that the volume of the first portion of the extracting liquid is equal to a given value, the second portion of the extracting liquid can be dosed using a dosing loop so that the volume of the second portion of the extracting liquid is equal to a given value, the volume of the first part of the extracting liquid is equal to the volume of the second part of the extracting liquid, the first section of the marginal channel and the second section of the marginal channel are closed channels, so that the extracting liquid entering the first section of the marginal channel can flow only from the inlet to the corresponding outlet along the first section of the marginal channel, and the extracting liquid entering the second section of the marginal channel can flow only from the inlet to the corresponding outlet along the second section of the marginal channel, after collecting the first portion of the extracting liquid and the second portion of the extracting liquid, moving the third portion of the liquid to the corresponding outlet by supplying the displacing gas through the corresponding inlet into the first section of the edge channel and collecting the waste liquid through the corresponding outlet, or moving the fourth portion of the liquid to the corresponding outlet by supplying the displacing gas through the corresponding inlet into the second section of the edge channel and collecting the waste liquid through the corresponding outlet.

17. A device for processing semiconductors according to paragraph 13, characterized in that before feeding the first portion of the extracting liquid into the first section of the edge channel and before feeding the second portion of the extracting liquid into the second section of the edge channel, a gas mixture containing hydrogen fluoride is first fed into the first section of the edge channel and into the second section of the edge channel, respectively.

18. A device for processing semiconductors according to paragraph 11, characterized in that the length of the first section of the marginal canal and the length of the second section of the marginal canal are equal.

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