GADOLINIUM (Gd) COATED DOUBLE PEROVSKITE BASE SOLID-STATE NEUTRON DETECTOR

Abstract

The invention relates to a new generation detector architecture for the detection and measurement of neutron radiation, which directly converts secondary radiation or charge carriers resulting from neutron-matter interactions into electrical signals. Instead of bulky and high-capacity solutions like scintillators or gas detectors, the developed system offers a compact, low-cost, and portable measurement technology that can be integrated into various structures. It provides a highly sensitive, stable, and reliable detection method for neutron source characterization, material analysis, and radiation monitoring applications.

Description

1 TARIFF GADOLINIUM (Gd) COATED DOUBLE PEROVSKITE BASE SOLID-STATE NEUTRON DETECTOR TECHNICAL AREA 5 The invention is a neutron-matter system for the detection and measurement of neutron radiation. secondary radiation or charge carriers resulting from interaction are directly electrically transmitted. It involves a new generation detector architecture that converts signals. The developed system, Classic solutions requiring bulky and high infrastructure, such as scintillators or gas detectors. instead, a measurement that can be integrated into compact, low-cost and portable structures. 10 It offers technology for the characterization of neutron sources, material analysis and Highly sensitive, stable and reliable for radiation monitoring applications. It reveals a detection method. PREVIOUS TECHNIQUE 15 When the literature and patent databases in the field of neutron detectors are examined, In most commonly used approaches, neutrons are first used to atomize gadolinium (Gd), boron This interaction is absorbed by a converter layer containing (¹⁰B) or lithium (⁶Li). As a result, gamma photons or charged particles are produced, and this secondary radiation or charge carriers, a separate scintillator, gas chamber or semiconductor sensor layer 20 It is read by. These structures include the transducer layer and the active sensor. The physical separation of the material, at the surface interface of signal carriers This results in transport losses, which in turn leads to a decrease in device efficiency. For example, according to patent number EP2700980, a boron-coated neutron detector. It is defined as follows: This detector consists of 25 multiple passages with inner surfaces lined with boron material. a cathode tube, an array consisting of a front-end anode in the middle, and high voltage It operates using the application. The inner wall of each passage is covered with a film containing ¹⁰B; thermal Neutron capture occurs via the reaction of boron with n → α + ⁷Li, and the resulting charged electron is captured. The particles form ionization in the gaseous environment, leading to detection. This The modification offers a similar 30 at a lower cost compared to classic ³He cylinders of the same volume. It is not, but it aims to offer sufficient detection efficiency. However, this structure, Carrier losses due to the converter film and the gas / sensor environment still being separate, and Due to limited efficiency, your proposed "single crystal / integrated detector" vision is not fully supported. It does not correspond to the meaning. 2 Similarly, patent number US8507872 concerns a microchannel plate. The microchannel (MCP) plate proposes a neutron detector design. In this detector, microchannel neutron-sensitive material layer on its walls, semiconductor layer and electron emitter Layers are deposited sequentially; neutron capture creates a “neutron-sensitive” wall. This occurs as a result of interaction with the layer, and the secondary electrons produced travel along the channel 5 They collide to create avalanche (multiplication); this electron flow is outside the sensor. The gas is collected and generates a detector signal. This approach is different from classic gas cylinder detectors. While it offers advantages such as compact structure, potentially high sensitivity and gamma discrimination The processes of regenerating and replicating the payload carrier are still in a passive environment, that is The sensor and transducer are implemented as separate layers. 10 US10107924 and “High-Efficiency Microstructured Semiconductor” Neutron Detectors and Process to Fabricate High-Efficiency Microstructured The patent, titled "Semiconductor Neutron Detectors," describes microstructured semiconductors. This document describes semiconductor substrate-based neutron detectors. Deep grooves are made in it and a neutron converter (e.g., boron or lithium 15) is placed in these grooves. (compounds) filled into a “microstructured semiconductor neutron detector (MSND)” It is recommended that this structure be created. This structure aims to facilitate the collection of load-bearing elements, Reducing neutron transport losses and achieving high detection accuracy with low leakage current. It aims to achieve this. However, this solution also involves different layers of material. It envisages a combination, meaning the converter + semiconductor infrastructure are still separate elements. 20 It remains as it is. Finally, application number US10613238, a thin surface with a ¹⁰B coated interior. neutron capture using walled gas cylinders, followed by reaction particles in the gas. It is based on the detection of ionization in the environment and the principle of a classic gas meter. solutions, ³Disadvantages such as Hexadecimal scarcity, gas toxicity and high operating voltage are a 25 Although it alleviates the problem somewhat, the converter and the ionization gas still need to be in separate environments. This represents a limitation, especially for sensitive, low-background, and high-efficiency detectors. is doing. In summary, the current technique involves physically connecting the transducer layer and the sensor layer. Separation leads to signal carrier losses and limited detection efficiency; bulky 30 (Bulk), complex and poorly portable systems, toxic in gas cylinder-based solutions gas usage or dependence on rare gases and sensor + transducer integration. lack of architecture leads to dependence on high infrastructure and production costs. This opens up the features of the transducer and sensor within a single structure. 3 combining, minimizing carrier losses, high neutron capture efficiency. There is a need for compact and portable detector technologies. THE PURPOSE OF THE INVENTION The invention relates to the physical design of transducer and sensor layers in neutron detectors. energy losses resulting from separation in gamma photon transmission It aims to eliminate inefficiencies and surface carrier losses. The architecture developed as part of the invention is a neutron converter containing gadolinium (Gd). based on the principle of coating the film directly onto the active sensing surface of the detector It is based on this integrated structure. Thanks to this structure, the Gd layer is at zero distance from the sensor surface. Since it is located at a distance (d = 0), the interaction of neutrons with Gd nuclei The resulting gamma photons cannot pass through any interface, air gap or optics. It is transferred directly to the dual perovskite sensing volume without any absorption loss. Thus, the penetration depth of gamma photons into the crystal and the carrier production density are increased, The signal amplitude increases significantly. 15 In the aforementioned structure, the Gd layer is directly coated onto the perovskite surface. The "carrier loss between Gd thin film and semiconductor" observed in current systems, fundamental issues such as "scattering of gamma photons at the surface" and "energy absorption imbalance" It eliminates problems. The transducer layer and the sensing layer are a single unit. By behaving like a continuous structure, the neutron → gamma → electron–hole transformation chain is intermediate 20 This is achieved without layer losses, thus maximizing energy transfer efficiency. This elevates it to the highest level. The lower layer features an adjustable Ag / Au ratio band. The gradient Cs₂AgₓAu₁₋ₓBiCl₆ layer emits high-energy gamma rays from the Gd layer. By enabling the directional and rapid transport of carriers formed by photons, it provides high payload capacity. This enables the achievement of high collection efficiency and a superior signal-to-noise ratio. 25 Thus, the detector exhibits high current variations with significant changes even at low neutron doses. It shows sensitivity and is used in scintillators, light guides, photon multiplier tubes (PMTs), or silicon. Compact, low-powered, without the need for additional optical components such as photomultipliers (SiPM). It offers a cost-effective and portable design. Additionally, it addresses issues encountered with gas-filled detectors. High voltage, toxic gas, or pressure requirements are completely eliminated. 30 In conclusion, the invention enables the electrical conduction of a neutron within a crystal structure in a single step. where the signal is converted, and the transducer and sensor functions are performed within the same material system. a new lead-free neutron detector that combines different components and offers high stability and sensitivity. Its architecture reveals this. 4 LIST OF FIGURES Figure 1. Illustration of the layered structure of the invention. The corresponding numbers in the figures are: 1. Gd layer 5 2. p-type HTL 3. Cs₂AgₓAu₁₋ₓBiCl₆ perovskite crystal 4. n-type ETL 5. ITO layer DETAILED DESCRIPTION OF THE INVENTION The neutron detector described in the invention converts neutrons into electrical signals. a multi-layer system that provides and integrates the transducer and sensor layers in a single structure. It is based on a layered sensing architecture. The invention utilizes high cross-section neutrons. Any 15 gamma photons produced by trapping them in a gadolinium (Gd) layer the transmission of this gamma directly to the sensing volume without interface loss, and this gamma by collecting the carriers generated by their interactions in a controlled and measurable manner It enables the generation of electric current. The invention, as can be seen from the schematic structure shown in Figure 1, consists of the following: Gd layer (1), p-type hole conduction layer (HTL) (2), Cs₂AgₓAu₁₋ₓBiCl₆ perovskite 20 five layers: crystal (3), n-type electron conduction layer (ETL) (4) and ITO layer (5) It consists of a basic component. The Gd layer (1) has a high cross-section for neutrons. by capturing and producing high-energy gamma photons; p-type HTL layer (2), Gd by collecting hole carriers formed as a result of gamma interactions from the layer It enables charge separation between the top electrode and the perovskite. Cs₂AgₓAu₁₋ₓBiCl₆ 25 perovskite crystal (3) absorbs gamma photons produced by the Gd layer It constitutes the main sensing volume that forms electron-hole pairs. This crystal (3), High carrier collection thanks to the adjustable band gap gradient via the Ag / Au ratio. It provides efficiency and low noise. n-type ETL layer (4), produced in perovskite. By transferring electron carriers towards the lower electrode, efficient carrier collection is achieved. 30 in carrying out; ITO layer (5) acts as a transparent and conductive bottom electrode. It enables the transfer of electrons to the external circuit. The invention works on the principle that neutrons are directed onto the Gd coated on the upper surface of the detector. high-energy gamma photons interact with the layer (1) It is based on the production of neutrons and their absorption in ¹⁵⁵Gd and ¹⁵⁷Gd nuclei. The resulting gamma cascade, Gd, has a total energy in the range of 7.9–8.5 MeV. any interface or air gap between the film and the sensing volume Thanks to its absence, it is directly into the Cs₂AgₓAu₁₋ₓBiCl₆ perovskite crystal (3) They are directed and interact here. These gamma photons pass through the perovskite crystal 5 (3) electron-hole pairs as a result of gamma-matter interaction This is formed by the band gradient of the perovskite crystal, which is adjusted according to the Ag / Au ratio. This enables the rapid and directional separation of carriers without recombining. In this direction, hole carriers towards the p-type HTL layer (2) located on the top. electron carriers are directed to the n-type ETL layer below (4) 10 It is transported correctly. The HTL layer (2) holes are efficiently transported towards the top electrode. It enables the transfer of electrons and the ETL layer (4) enables the transfer of electrons to the lower electrode. It maintains energy level balance by regulating it. All carrier flow passes through the bottom conductive ITO layer (5) to the outside. a measurable electric current is generated in the circuit. In this way, the system, 15 The neutron–gamma conversion initiated by the Gd layer (1) in the perovskite crystal (3) It combines carrier production within it; directional through HTL (2) and ETL (4) layers. The carrier performs transport. This integrated structure is resistant to neutron dose. It produces a linear, stable and highly accurate electrical response, Thanks to the combination of converter and sensor layers in the same structure, the classical neutron 20 energy loss, carrier inefficiency, and signal attenuation observed in detectors It eliminates their problems. 30

Claims

6 REQUESTS 1. A multilayer that enables the conversion of neutrons into an electrical signal. It is a neutron detector characterized by its high cross-section gadolinium (Gd) layer. (1), neutrons in a high cross-section gadolinium (Gd) layer (1) 5 the transmission of gamma photons produced by capture to the sensing volume The aim is to provide highly sensitive and low-loss detection. the absorption of gamma photons and the formation of electron-hole pairs Cs₂AgₓAu₁₋ₓBiCl₆ perovskite crystal (3), the hole formed in this crystal p-type hole conduction layer (HTL) (2) which directs the carriers to the upper electrode, 10 n-type electron transport layer (ETL) that transfers electron carriers to the bottom electrode (4) and containing the conductive ITO layer (5) which provides current transmission to the external circuit. It is characteristic.

2. It is a neutron detector according to claim 1, and its characteristic is that its carrier collection efficiency is... Cs₂AgₓAu₁₋ₓBiCl₆ 15 is intended to increase and reduce noise levels. band gap gradient of perovskite crystal (3) adjustable with Ag / Au ratio It is characterized by having.

3. A neutron detector according to claim 1 or 2, with the characteristic of being a hole carrier. in order to have energy level compatibility that will optimize its mobility p-type hole conduction selected from organic or inorganic semiconductor material 20 It is characterized by containing a layer (HTL) (2).

4. Is it a neutron detector according to any of the requirements 1-3? Its characteristic is that it reflects back while directing electron carriers to the lower electrode. made from a low band gap inorganic material that reduces losses It is characterized by containing an n-type electron transport layer (ETL) (4). 25 5. Is it a neutron detector according to any of the requirements 1-4? Its feature is that it is in thin film form and can be directly coated onto the detector surface to detect gamma rays. the interaction of photons with perovskite crystal (3) without interface loss It is characterized by containing the Gd layer (1) which provides

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