Method for Producing Local Polycrystalline Silicon Passivation Contacts and Incorporating Them in Solar Silicon Cells

By localizing p-type polycrystalline silicon under metal contacts through selective etching, the recombination losses at silicon-metal interfaces are mitigated, enhancing the efficiency of crystalline silicon solar cells, particularly in TOPCon, TOPCoRE, and PERC architectures.

TR202611110TPending Publication Date: 2026-10-21ODTÜ-GÜNAM +1
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Patent Information

Application Number
TR202611110
Authority / Receiving Office
TR · TR
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-10-30
Publication Date
2026-10-21

AI Technical Summary

Technical Problem

Recombination losses at direct silicon-metal contacts in crystalline silicon solar cells lead to reduced efficiency and high thermal budget processes, particularly in TOPCon, TOPCoRE, and PERC solar cells, limiting the performance of single-junction and tandem solar cell architectures.

Method used

Implementing local p-type doping followed by selective alkaline etching to create a localized polycrystalline silicon layer under metal contacts, reducing direct silicon-metal contact and minimizing parasitic light absorption, thereby enhancing open circuit voltage.

Benefits of technology

The solution effectively reduces recombination losses, enabling high open circuit voltage and efficient operation of single-junction and tandem crystalline silicon solar cells with improved performance and efficiency.

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Abstract

The invention relates to the formation of a local p-type polycrystalline silicon by a local p-type doping and subsequent selective alkaline etching approach, thereby providing five different crystalline silicon-based single-junction and sub-cell structures for tandem-architectural solar cells.
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Description

1 TARIFF LOCAL POLYCRYSTALLINE SILICONE PASSIVATION CONTACT AND THIS METHOD FOR PRODUCING SOLAR SILICON CELLS CONTAINING Technical Area The invention relates to local p-type doping followed by selective alkaline etching, resulting in local p-type 5. the creation of a polycrystalline silicon and thus five solar cells with tandem architecture It is concerned with providing different crystalline silicon-based single-link and sub-cellular structures. Previous Technique Today, photovoltaic technologies are used to develop sustainable energy sources. It is of vital importance. Crystalline silicon-based solar cells are highly efficient and stable. And due to their cost-effectiveness, they are widely used in this field. These solar cells, Thanks to the photovoltaic effect, it converts sunlight directly into electricity, which in turn... This makes it an indispensable component of solar energy systems. In this field... Research and development efforts to meet the growing demand for renewable energy. to improve the performance, efficiency and manufacturing processes of these batteries 15 It focuses on advancements in materials science, doping techniques, and battery architectures. Improvements in the efficiency and affordability of crystalline silicon solar cells. They continue to do so and strengthen their roles in the global transition to clean energy. Patent document number CN114597285A describes a method for manufacturing a solar cell, the solar cell itself. and describes a photovoltaic module, related to the technical field of solar cells. Preparation 20 The method includes the following steps: cleaning and texturing an N-type silicone substrate. This involves creating a P-type diffusion layer on the front surface of the silicone substrate. Formation of an undoped polycrystalline silicon wafer, N-type doping, the wrapping coating on the front surface and the pure material positioned on the front surface Removal of the polycrystalline silicon layer and doped glass positioned on the back surface 25 the preservation of at least part of the layer, on the front and back sides respectively. A first passivation layer and a second passivation layer are created, the first A primary electrode is formed on one side of the passivation layer, and a secondary passivation is performed. A second electrode is created on one side of the layer. 2 Patent document number WO2016049245A1 describes semiconductor devices, specifically solar cells and It describes the manufacturing methods of solar cells. They have passivation contacts and A device capable of withstanding processing temperatures above 700°C, along with passivation. equipped with contacts and capable of converting solar energy into electrical energy with at least 20% efficiency. A solar cell is described. Furthermore, the production of the device and solar cell described here is detailed in section 5. The methods are also explained. Patent document number WO2014180471A1, with a rough back and preferably on top A solar cell substrate with a back-side contact containing printed aluminum, preferably a a solar cell with a silicon solar cell substrate and at least the back of the solar cell substrate texturing one side, diffusion of boron to the back of the solar cell substrate and 10 aluminum is applied to the back of the solar cell substrate to create a back-side contact. It describes a method of producing a solar cell that involves pressing a paste containing a specific ingredient. Front and rear contact photovoltaic (PV) crystalline silicon solar cells: TOPCon (Tunnel Oxide) Passivation Contact), TOPCoRE (TOPCon rear emitter), PERC (Passivation Emitter Rear Emitter) These batteries, produced using high thermal budget methods, feature directly localized metal-15 on the front. Silicon is subject to recombination losses. Furthermore, PERC solar cells have a backend. Local direct metal-silicon recombination losses occur on this side. In addition, perovskite / silicon and, more importantly, III / V / silicon tandem offer high thermal budget. Silicon-based substructures, local direct metal-silicon recombination on the back. It suffers from losses. TOPCon and 20, which have full-area polycrystalline silicon on the front. For TOPCoRE PV solar cells, harmful effects are due to parasitic absorption of polycrystalline silicon. The localization of p-type polycrystalline silicon under metal contacts leads to current losses. It can remove the restriction. Direct silicon-metal contact silicon PV with ultra-high open circuit voltage (Voc). It induces significant recombination losses that prevent the realization of the structure. 25 Having local p-type polycrystalline silicon allows for efficient single-link crystalline silicon solar power. their batteries (on the front of the TOPCon, on the front of the TOPCoRE, on the back of the PERC) as well as an efficient subcellular crystalline silicon structure for various tandem integrations. This constitutes a prerequisite for its realization. Brief Description of the Invention 30 3 The invention relates to metal contacts and crystalline silicon chips for single-junction crystalline silicon solar cells. direct contact between plates and crystalline silicon-based solar cells It aims to solve recombination problems arising from the structure of solar cells. The invention consists of local p-type doping followed by selective alkaline etching processes. a novel approach provides a local p-type polycrystalline silicon layer, thus five 5 different new crystalline silicon-based solar cells with single-junction and tandem architectures It makes its creation possible. The invention relates to metal contacts and crystalline silicon in high thermal budget crystalline silicon-based solar cells. Recombination problems arising from direct contact between silicon wafers By solving this, it provides a high Voc voltage from the solar cell. 10 Shapes Figure 1. Appearance of the subcell battery structure for III / V / silicon and perovskite / silicon tandem. Figure 2. Appearance of a fully passivated PERC battery structure. Figure 3. Front-side emitter double-sided polycrystalline silicon passivation contact battery structure. appearance. 15 Figure 4. Rear-side emitter double-sided polycrystalline silicon passivation contact battery structure. appearance. Figure 5. Appearance of IBC or back-polycrystalline passivation contact cell structure. 1. P-type crystalline silicon absorber 2. Pyramid-shaped silicone surface 20 3. Tunnel oxide 4. p-type polycrystalline silicon 5. n-type polycrystalline silicon 6. Al2Ox passivation layer 7. SiNx passivation layer 25 8. Metal contact 9. n-type crystalline silicon absorber 10. Bor 11. Phosphorus 12. Back side 30 13. Pyramid surface 14. Flat surface 4 Detailed Description of the Invention The invention consists of local p-type doping followed by selective alkaline etching processes. a new approach to create a local p-type polycrystalline silicon layer and thus 5 different new crystalline silicon-based solar cells with single-junction and tandem architectures It is related to its production. For front surface emitters (n-type crystalline silicon absorbers), p-type under metal contact on the front surface. Localization of polycrystalline silicon enables high aperture without inducing parasitic light absorption. This will eliminate the direct metal-silicon contact that supplies the circuit voltage. For back surface emitters (p-type crystalline silicon absorbers), metal 10 of p-type polycrystalline silicon. Localization under contact, high open circuit without inducing parasitic light absorption. This will eliminate the direct metal-silicon contact that provides the voltage. P-type on the back surface. Localization of polycrystalline silicon under metal contacts, sub-cell battery and PERC structures. by eliminating direct metal-silicon contact for high open circuit voltage will provide. 15 In this invention, local p-type polycrystalline silicon is masked through a layer of undoped polycrystalline silicon. It is prepared by local boron doping and then, masked undoped polycrystalline selective silicon where the etching rate is higher than that of boron-doped polycrystalline silicon Alkaline etching process is applied. The invention provides five different crystalline silicon-based solar cells. The crystalline silicon absorber has 20 One surface is a pyramidal surface (13), and the other is a flat surface (14). Pyramid surface (13), multiple pyramid-shaped protrusions and multiple inverted pyramid-shaped recesses It includes pyramid-shaped protrusions arranged symmetrically side by side, in a regular pattern. It forms a grid-like pattern. Each protrusion corresponds to a square sub-cell and a single vertex. It has four triangular sides that converge towards a point, giving it a distinct pyramid shape. 25 It is formed by these pyramid-shaped protrusions, and the indentations between them are also pyramid-shaped. It is reversed, creating grooves that mirror the shape of the protrusions. Pyramid-shaped. The protrusions are arranged symmetrically in rows and columns, along the surface. It forms a uniform pattern. The height of each pyramid is fixed, and the dimensions of the lower cells are different. equal in depth, which contributes to symmetry. The depth of each indentation is equal to that of the adjacent 30 It matches the height of the pyramid-shaped protrusions and the lower cell dimensions are also equal, this This ensures that the indentations are symmetrical and aligned with the protrusions. General construction. It is symmetrical, with each pyramidal protrusion creating a reflection with the adjacent recess, elevated and It reveals a repeating pattern of indented pyramids. Or these pyramids Their size and shape can be random. 5 The aforementioned subcell battery consists of the following: a flat surface on one side (14) and on the other Crystalline silicon absorber with a pyramid surface (13) on one side, Al2Ox passivation layer (6) and a flat surface (14) or pyramidal surface (13) in contact with the SiNx passivation layer (7) p-type polycrystalline silicon positioned on (4), crystalline silicon absorber contacting the side of the p-type polycrystalline silicon (4) that is not looking at a flat surface (14) or 10 At least one metal contact (8) placed on a pyramidal surface (13), a flat surface (14) or Al2Ox passivation layer (6) positioned on pyramidal surface (13) and a flat SiNx passivation layer positioned on surface (14) or pyramid surface (13) (7). Crystalline silicon absorber, p-type crystalline silicon absorber (1) or n-type crystalline silicon It is an absorber (9). When stimulated by sunlight, it enables electrical conduction and electron movement. 15 Structured to create blocking positive charge carriers and Al2Ox passivation p-type polycrystalline silicon (4) in contact with the layer (6) and the SiNx passivation layer (7). Figure 1 shows the subcell battery structure for III / V / silicon and perovskite / silicon tandem. The method for preparing the sub-cell battery structure shown in Figure 1 involves the following steps: 1. Planarization of the back side (12) and pyramidal structure of p-type crystalline silicon absorber 20 Formation of pyramids on silicon surface (2), P-type crystalline silicon absorber (1) has two types: flat surface (14) and pyramidal surface (13). It has a surface. P-type crystalline silicon absorber (1) can be doped with gallium or boron. P- Back side (12) of the type crystalline silicon absorber (1), acidic and alkaline processes is planarized and pyramidal silicone surface (front) (2), alkaline texturing 25 They are structured by creating micron-sized or nano-sized pyramids with lasers. Nanostructuring can be achieved through processes or reactive ion etching. 2. Ultra-thin tunnel oxide (SiOx) on the flat surface (14) under p-type polycrystalline silicon (4) (3) placement, 6 In this process, tunnel oxide (3), p-type polycrystalline silicon (4) under p-type crystalline silicon It is placed on the back side (12) of the absorber (1). Under the p-type polycrystalline silicon (4). tunnel oxide (3) is present. The growth process of tunnel oxide (3) involves nitric acid or hydrogen wet chemical oxidation in peroxide, ozone oxidation, thermal oxidation, or atomic oxidation. Layer deposition can occur. 5 3. Deposition of p-type polycrystalline silicon (4) on the entire surface, In this process, polycrystalline silicon is p-type polycrystalline silicon (4). P-type polycrystalline The process of deposition of the local area of ​​silicon (4) is LPCVD (low pressure chemical vapor deposition). (deposition), PECVD (plasma-assisted chemical vapor deposition) or PVD (spray or deposition) (electron beam deposition) to transfer 10% of the surface area of ​​undoped polycrystalline silicon or amorphous silicon. This is achieved by accumulation. This is done via ion implantation using B or BF or By using BF2 or BF3, or via diffusion of BBr3 or BCl3 through a rigid mask. Boron doping is followed. Local p-type polycrystalline silicon (4) is etched by selective alkaline etching. is being created. 4. Ultra-thin tunnel oxide (SiOx) (3) on the front side on the pyramidal silicon surface (2) 15 creation, 5. Phosphorus (11) on the pyramidal silicon surface (2) of the p-type crystalline silicon absorber (1). deposition of doped n-type polycrystalline silicon (5), The deposition process of phosphorus-doped n-type polycrystalline silicon (5) is LPCVD (low pressure chemical vapor deposition), PECVD (plasma-assisted chemical vapor deposition) or PVD 20 This is achieved through (spraying or electron beam deposition). This process, LPCVD (low-pressure chemical vapor deposition), or PECVD (plasma-assisted chemical deposition) during vapor deposition (VAP) or PVD processes (in-situ doping) phosphorus atoms by adding and then oven annealing or deposition of a pure thin silicon layer and then the diffusion process, spin-on doping of phosphorus atoms or phosphorus ion 25 by doping the silicone layer with phosphorus using implantation is being carried out. 6. Depositing of Al2Ox passivation layer (6) on the back surface (12). 7. Applying SiNx passivation layer (7) on top of Al2Ox passivation layer (6) accumulation, 30 7 Depositing the Al2Ox passivation layer (6) on the back surface (12) results in ALD (atomic via sheet deposition (SDF) or PECVD (plasma-assisted chemical vapor deposition) It is carried out. Al2Ox passivation layer (6) on flat surface (14). It is being positioned. 8. Applying SiNx passivation layer (7) on top of Al2Ox passivation layer (6) 5 accumulation, Depositing of SiNx passivation layer (7) on top of Al2Ox passivation layer (6), This is achieved via PECVD (plasma-assisted chemical vapor deposition). 9. p-type crystalline silicon absorber (1) on the back flat surface (12) not in contact with the p-type Deposit of at least one metal contact (8) in contact with polycrystalline silicon (4). 10 During metal contact deposition, metal-containing materials form an Al2Ox passivation layer (6) and can erode the SiNx passivation layer (7) and local p-type polycrystalline silicon It can reach the absorber (1). Alternatively, laser opening process or photolithography process Al2Ox passivation layer (6) and SiNx on top of p-type polycrystalline silicon (4) using The passivation layer (7) can be locally eroded and direct metal contact formation 15 Local p-type polycrystalline silicon can be produced for this purpose. The method for preparing the PERC battery structure shown in Figure 2 includes the following steps: 1. Planarization of the back side (12) and front of the p-type crystalline silicon absorber (1). on the side (2) the creation of pyramids, P-type crystalline silicon absorber (1) has two surfaces: flat surface (14) and pyramidal surface (13). It has. P-type crystalline silicon absorber (1) can be doped with gallium or boron. P-type The back side (12) of the crystalline silicon absorber (1) can be treated with acidic and alkaline processes. is planarized and pyramidal structured silicone surface (2), micron by alkaline texturing They are structured by creating three-dimensional or nano-dimensional pyramids using laser processes. Alternatively, nanostructuring can be achieved by reactive ion etching. 25 2. On the pyramidal silicon surface (front) (2) of the p-type crystalline silicon absorber (1) the creation of a high phosphorus (11) additive, 8 This is the diffusion process, spin-on doping of phosphorus (11) atoms or phosphorus (11) ion It can be achieved through implantation. Phosphorus (11) is placed on the pyramid surface (13). It is being positioned. 3. Formation of ultra-thin tunnel oxide (SiOx) (3) on a flat surface (14), The formation process is wet chemical oxidation in nitric acid or hydrogen peroxide, ozone 5 Oxidation can occur through thermal oxidation or atomic layer deposition. 4. Local deposition of p-type polycrystalline silicon (4), In this process, polycrystalline silicon is p-type polycrystalline silicon (4). P-type polycrystalline The process of deposition of the local area of ​​silicon (4) is LPCVD (low pressure chemical vapor deposition). (deposition), PECVD (plasma-assisted chemical vapor deposition) or PVD (spray or 10 (electron beam deposition) via full field undoped polycrystalline silicon or amorphous This is achieved by depositing silicon. This can be done via ion implantation using B or... Diffusion of BBr3 or BCl3 using BF or BF2 or BF3, or through a rigid mask. Boron doping is followed by local p-type polycrystalline silicon, selective alkaline etching. It is created with. 15 5. Deposit of Al2Ox passivation layer (6) on flat surface (14), Al2Ox passivation layer on the flat side surface (14) of p-type crystalline silicon absorber (1) (6) deposition process, ALD (atomic layer deposition) or PECVD (plasma-assisted deposition) It is carried out by chemical vapor deposition. Al2Ox passivation layer (6), flat It is positioned on the surface (14). 20 6. SiNx on the Al2Ox passivation layer (6) and on the heavily doped phosphorus (11). accumulation of passivation layer (7), SiNx passivation layer (7) and densely doped on Al2Ox passivation layer (6) The process of deposition of phosphorus (11) is PECVD (plasma-assisted chemical vapor deposition) This is done through this method. 25 7. Deposit of metal contact (8) on flat surface (14) and pyramid surface (13), During metal contact deposition, metal-containing materials form an Al2Ox passivation layer (6) and can erode the SiNx passivation layer (7) and the local on the back flat surface (12). 9 p-type polycrystalline silicon (4) can be reached. Or, by laser opening process or photolithography Using the process, the Al2Ox passivation layer (6) on top of p-type polycrystalline silicon (4) and the SiNx passivation layer (7) can be locally eroded and directly contact metal. Local p-type polycrystalline silicon can be exposed for its formation. For the front side (2), Materials containing metal can corrode SiNx (7) and highly doped phosphorus (11) 5 It is accessible. The front view in Figure 3 shows a double-sided emitting polycrystalline silicon passivation contact battery structure. The preparation method includes the following steps: 1. Planarization of the back side (12) and front of the n-type crystalline silicon absorber (9). on the side (2) the creation of the pyramids, 10 Crystalline silicon absorber is an n-type crystalline silicon absorber (9). N-type crystalline silicon absorber (9) may be doped with arsenic or phosphorus. N-type crystalline silicon absorber (9), flat It has two surfaces, namely the surface (14) and the pyramidal surface (13). n-type crystalline silicon The back side (12) of the absorber (9) is planarized by acidic and alkaline processes and pyramid structured silicon surface (2), micron-sized or nano-sized pyramids by alkaline texturing 15 They are formed and structured through laser processes or reactive ion etching. Nanostructuring is possible. For the front side, boron is used to create the front surface area. (10) Doping can be used, this is optional. 2. Formation of a boron (10) doped pyramid surface (13), This is the diffusion process, spin-on doping of boron (10) atoms or boron (10) ion 20 This can be achieved through implantation. 3. Ultra-thin tunnel oxide (SiOx) (3) on pyramidal silicon surface (2) placement, Tunnel oxide (3) is the base of p-type polycrystalline silicon (4) on a pyramidal silicon surface (2). It is placed underneath. The formation process involves wetting the 25 in nitric acid or hydrogen peroxide. chemical oxidation, ozone oxidation, thermal oxidation, or atomic layer deposition It is possible. 4. Local deposition of p-type polycrystalline silicon (4), In this process, polycrystalline silicon is p-type polycrystalline silicon (4). P-type polycrystalline The process of deposition of the local area of ​​silicon (4) is LPCVD (low pressure chemical vapor deposition). (deposition), PECVD (plasma-assisted chemical vapor deposition) or PVD (spray or deposition) (electron beam deposition) via full field undoped polycrystalline silicon or amorphous 5 This is achieved by depositing silicon. This can be done via ion implantation using B or... Diffusion of BBr3 or BCl3 using BF or BF2 or BF3, or through a rigid mask. Boron doping is followed by local p-type polycrystalline silicon, selective alkaline etching. It is created with. 5. Rear 10 of the n-type crystalline silicone absorber (9) under the n-type polycrystalline silicone (5) (12) tunnel oxide (SiOx) (3) formation, The production process involves wet chemical oxidation in nitric acid or hydrogen peroxide, ozone. Oxidation can occur through thermal oxidation or atomic layer deposition. 6. Phosphorus-doped n-type polycrystalline on flat surface (14) on tunnel oxide (3) accumulation of silicon (5), 15 The deposition of phosphorus-doped n-type polycrystalline silicon (5) was achieved by LPCVD (low pressure chemical vapor deposition), PECVD (plasma-assisted chemical vapor deposition) or PVD (sputtering) This is done via LPCVD (low-pressure or electron beam deposition). chemical vapor deposition) or PECVD (plasma-assisted chemical vapor deposition) or Addition of phosphorus (11) atoms during PVD processes (in-situ doping), followed by furnace 20 annealing or deposition of a thin, pure silicon layer followed by diffusion process, silicon by spin-on doping of phosphorus atoms or phosphorus ion implantation This is achieved by doping the layer with phosphorus (11). 7. Al2Ox passivation layer (6) on pyramid surface (13) and local p-type Deposition of polycrystalline silicon (4), 25 Al2Ox passivation layer (6) on pyramid surface (13) and local p-type polycrystalline deposition of silicon (4) on ALD (atomic layer deposition) or PECVD (plasma This is achieved through assisted chemical vapor deposition. 11 8. On the front Al2Ox passivation layer (6) and on the back n-type Deposition of SiNx passivation layer (7) on polycrystalline silicon (5), Front Al2Ox passivation layer (6) and back n-type polycrystalline silicon (5) The process of depositing a SiNx passivation layer (7) on it is called PECVD (plasma-assisted This is achieved through chemical vapor deposition. 5 9. At least one metal contact (8) on the pyramid-shaped silicone surface (2) and the back side (12) accumulation. During metal contact deposition on the front surface, metal-containing materials undergo Al2Ox passivation. It can erode the layer (6) and the SiNx passivation layer (7) and the local p- on the front surface. It can reach polycrystalline silicon (4). Or, laser opening process or photolithography 10 Using the process, Al2Ox passivation layer (6) and SiNx passivation layer (7) local p-type Polycrystalline silicon (4) can be locally etched and directly onto the metal Local p-type polycrystalline silicon (4) can be exposed for contact formation. Back side For this reason, metal-containing materials erode the SiNx passivation layer (7) and phosphorus (11) It reaches doped n-type polycrystalline silicon (5). 15 The rear emitter in Figure 4 is a double-sided polycrystalline silicon passivated contact battery structure. The preparation method includes the following steps: 1. Planarization of the back side (12) and front side (2) of the crystalline silicon absorber. the construction of pyramids Crystalline silicon absorber is a p-type crystalline silicon absorber (1). P-type crystalline silicon absorber 20 (1) It has two surfaces, flat surface (14) and pyramidal surface (13). P-type crystalline The silicon absorber (1) can be doped with gallium or boron. P-type crystalline silicon absorber (1) the back side (12) is planarized by acidic and alkaline processes and the front side (2), micron-sized or nano-sized pyramids are formed by alkaline texturing. is being structured. Nanostructuring via laser processes or reactive ion etching 25 This can be done. For the front, light reinforcement is used to create the front surface area. It is available, but it is optional. 2. Ultra-thin tunnel on the front pyramid surface (13) of the p-type crystalline silicon absorber (1). oxide (SiOx) (3) placement, 12 The production process involves wet chemical oxidation in nitric acid or hydrogen peroxide, ozone. Oxidation can occur through thermal oxidation or atomic layer deposition. 3. Local deposition of p-type polycrystalline silicon (4), Polycrystalline silicon is p-type polycrystalline silicon (4). Local application of P-type polycrystalline silicon (4) the process of deposition of the area, LPCVD (low-pressure chemical vapor deposition), PECVD 5 (plasma-assisted chemical vapor deposition) or PVD (sputtering or electron beam) full-field undoped polycrystalline silicon or amorphous silicon by (deposition) This is achieved by accumulation. This is done via ion implantation using B or BF or By using BF2 or BF3, or via diffusion of BBr3 or BCl3 through a rigid mask. Boron doping is followed. Local p-type polycrystalline silicon is obtained by selective alkali etching 10 is being created. 4. Formation of ultra-thin tunnel oxide (SiOx) (3) on a flat surface (14), The production process involves wet chemical oxidation in nitric acid or hydrogen peroxide, ozone. Oxidation can occur through thermal oxidation or atomic layer deposition. 5. Phosphorus-doped n-type polycrystalline 15 on flat surface (14) on tunnel oxide (3). silicon (5) deposition, The deposition of phosphorus-doped n-type polycrystalline silicon (5) was achieved by LPCVD (low pressure chemical vapor deposition), PECVD (plasma-assisted chemical vapor deposition) or PVD (sputtering) This is done via LPCVD (low-pressure or electron beam deposition). chemical vapor deposition) or PECVD (plasma-assisted chemical vapor deposition) or 20 Addition of phosphorus (11) atoms during PVD processes (in-situ doping) and then furnace annealing or deposition of a pure thin silicon layer followed by diffusion The process uses spin-on doping of phosphorus atoms or phosphorus ion implantation. This is achieved by doping the silicon layer with phosphorus (11). 6. Al2Ox passivation layer (6) on pyramid surface (13) and local p-type 25 deposition of polycrystalline silicon (4), Al2Ox passivation layer (6) on pyramid surface (13) and local p-type polycrystalline The process of depositing silicon (4) on the surface is ALD (atomic layer deposition) or PECVD. This is achieved using the plasma-assisted chemical vapor deposition (PAD) method. 13 7. On Al2Ox (6) on the front and on n-type polycrystalline silicon (5) on the back Deposition of SiNx passivation layer (7), Front Al2Ox passivation layer (6) and back n-type polycrystalline silicon (5) The process of depositing a SiNx passivation layer (7) on it is called PECVD (plasma-assisted This is achieved through chemical vapor deposition. 5 8. At least one metal contact (8) on the pyramid-shaped silicone surface (2) and the back side (12) accumulation. During metal contact deposition on the front surface, metal-containing materials undergo Al2Ox passivation. It can erode the layer (6) and the SiNx passivation layer (7) and the local p- on the front surface. It can reach polycrystalline silicon (4). Or, laser opening process or photolithography 10 Using the process, Al2Ox passivation layer on local p-type polycrystalline silicon (4) (6) and SiNx passivation layer (7) can be locally eroded and directly metal Local p-type polycrystalline silicon (4) can be exposed for contact formation. Back side For this, metal-containing materials can corrode SiNx (7) and phosphorus (11) doped n-type It can reach polycrystalline silicon (5). 15 Figure 5 shows an IBC (Interlocking Back Contact) or back polycrystalline passivation contact. The method for preparing the battery structure includes the following steps: 1. a p-type crystalline silicon absorber (1) or an n-type crystalline silicon absorber (9) preparation, P-type crystalline silicon absorber (1) can be doped with gallium or boron. N-type crystalline 20 The silicon absorber (9) can be doped with arsenic or phosphorus. The p-type crystalline silicon absorber (1) or back side of n-type crystalline silicon absorber (9) (12), by acidic and alkaline processes is planarized and pyramidal structured silicone surface (2), by alkaline texturing They are structured by creating micron-sized or nano-sized pyramids. Laser Nanostructuring can be achieved through processes or reactive ion etching. P-type 25 light to create front surface area on the front pyramid surface (13) of crystalline silicon absorber (1) Boron (10) additive can be used, this is optional. N-type polycrystalline silicon absorber (9) Addition of light phosphorus (11) is optional. 2. p-type crystalline silicon absorber (1) or n-type crystalline silicon absorber (9) on the back side (12) formation of ultra-thin tunnel oxide (SiOx) (3), 30 14 The production process involves wet chemical oxidation in nitric acid or hydrogen peroxide, ozone. Oxidation can occur through thermal oxidation or atomic layer deposition. 3. Local deposition of p-type polycrystalline silicon (4), Polycrystalline silicon is p-type polycrystalline silicon (4). Local application of P type polycrystalline silicon (4) the process of deposition of the area, LPCVD (low-pressure chemical vapor deposition), PECVD 5 (plasma-assisted chemical vapor deposition) or PVD (sputtering or electron beam) full-field undoped polycrystalline silicon or amorphous silicon by (deposition) This is achieved by accumulation. This is done via ion implantation using B or BF or By using BF2 or BF3, or via diffusion of BBr3 or BCl3 through a rigid mask. Boron doping is followed. Local p-type polycrystalline silicon is obtained by selective alkaline etching 10 is being created. 4. On the local p-type polycrystalline silicon (4) and the p-type crystalline silicon absorber (1) or ultra-fine tunnel oxide on the back flat side (12) of the n-type crystalline silicon absorber (9). (SiOx) (3) formation, The formation process is wet chemical oxidation in nitric acid or hydrogen peroxide, ozone 15 Oxidation can occur through thermal oxidation or atomic layer deposition. 5. Local deposition of n-type polycrystalline silicon (5) on tunnel oxide (3), Polycrystalline silicon is n-type polycrystalline silicon (5). p-type with n-type polycrystalline silicon (5) Polycrystalline silicon (4) is physically separated from each other by a gap. Local area n-type polycrystalline silicon (5) deposition process, local area n-type amorphous silicon or n-type 20 Direct deposition of polycrystalline silicon through a mask and subsequent polycrystalline The process of forming silicon is achieved through thermal furnace annealing. Local area n-type. low-function polymers such as polycrystalline silicon, alkali metal fluorides, or ion crystals. The materials can be exchanged by accumulating them through a mask. 6. Al2Ox passivation layer (6) on local area p-type polycrystalline silicon (4) 25 and local area n-type polycrystalline silicon (5) and local area p-type polycrystalline flat surface (14) between silicon (4) and local area n-type polycrystalline silicon (5) accumulation on it, Al2Ox passivation layer (6) on local area p-type polycrystalline silicon (4) and local area local area n-type polycrystalline silicon (5) and local area p-type polycrystalline silicon (4) and deposition of local area n-type polycrystalline silicon (5) on flat surface (14) the process is ALD (atomic layer deposition) or PECVD (plasma-assisted chemical vapor deposition). This is achieved through accumulation. 5 7. Al2Ox passivation onto the pyramid surface (13) of p-type crystalline silicon absorber (1). Deposit of the layer (6). p-type crystalline silicon surface slightly coated with boron (10). It can be contributed to. 8 On the back Al2Ox passivation layer (6) and p-type crystalline silicon n-type crystalline silicon 10 was placed on the Al2Ox layer on the front side of the absorber (1). Depositing of SiNx passivation layer (7) on the front side (2) of the absorber (9). On the back side, Al2Ox passivation layer (6) and p-type crystalline silicon absorber (1) Al2Ox on the front side and SiNx on the front side (2) of the n-type crystalline silicon absorber (9) The process of depositing the passivation layer (7) is PECVD (plasma-assisted chemical vapor deposition). This is done through accumulation. 15 9. At least one metal contact (8) with local area p-type polycrystalline silicon (4) and n-type Deposition of polycrystalline silicon (5). During metal contact deposition, metal-containing materials form an Al2Ox passivation layer (6) and by eroding the SiNx passivation layer (7), it produces local p-type polycrystalline silicon (4) and local n- It can reach type polycrystalline silicon (5). Or, p-type polycrystalline silicon (4) and n-type 20 Al2Ox passivation layer (6) and SiNx passivation on polycrystalline silicon (5) to locally erode back the layer (7) and to form a local p-type direct metal contact. to reveal polycrystalline silicon (4) and local n-type polycrystalline silicon (5) with laser Opening process or photolithography process can be used.

Claims

16 REQUESTS 1. A solar cell is characterized by its ability to generate positive charge carriers for electrical conduction. It is structured to block electron movement when stimulated by sunlight, and At least one p- in contact with the Al2Ox passivation layer (6) and the SiNx passivation layer (7) The type is that it contains polycrystalline silicon (4). 5 2. A solar cell according to claim 1, whose characteristic is that a crystalline silicon absorber (1,9) has a flat surface. (14) or p-type polycrystalline silicon positioned on the pyramid surface (13) (4) It contains at least one metal contact (8) that is in contact.

3. It is a solar cell according to claim 2, and its characteristic is that the number of the aforementioned metal contacts (8) is three that is. 10 4. It is a solar cell according to claim 3, and its characteristic is that the aforementioned crystalline silicon absorber is a p-type... It is a crystalline silicon absorber (1).

5. It is a solar cell according to claim 4, and its characteristic is that the aforementioned p-type crystalline silicon absorber (1) It is doped with gallium or boron.

6. It is a solar cell according to claim 3, and its characteristic is that it is positioned on a pyramid surface (13) 15 It contains an n-type polycrystalline silicon (5).

7. According to claim 3, it is a solar cell whose characteristic is that it is positioned on a flat surface (14). It contains an Al2Ox passivation layer (6).

8. According to claim 3, it is a solar cell whose characteristic is that it is positioned on a flat surface (14). It contains a SiNx passivation layer (7). 20 9. It is a solar cell according to claim 3, and its characteristic is that it is made of the aforementioned p-type polycrystalline silicon (4) The tunnel oxide (3) is located underneath.

10. According to claim 9, it is a solar cell whose characteristic is that the mentioned tunnel oxide (3) is on a flat surface (14) and its positioning on a pyramid surface (13).

11. It is a solar cell according to claim 2, and its characteristic is that the number of the mentioned metal contacts (8) is two 25 and one of them is n-type polycrystalline silicon (5) and the other is p-type polycrystalline It is contact with silicone (4).

12. According to claim 11, it is a solar cell with the characteristic of being; n-type polycrystalline silicon (5) and p-type It is the presence of tunnel oxide (3) under polycrystalline silicon (4).

13. It is a solar cell according to claim 12, and its characteristic is that it has 30 on a pyramid surface (13). It contains a positioned SiNx passivation layer (7).

14. A solar cell according to claim 13, whose characteristic is that the aforementioned crystalline silicon absorber is of the p-type. It is either a crystalline silicon absorber (1) or an n-type crystalline silicon absorber (9). 17 15. It is a solar cell according to claim 2, and its characteristic is that the number of the mentioned metal contacts (8) five of them and three of them are flat surfaces in contact with p-type polycrystalline silicon (4) (14) is positioned on the pyramid surface (13) and the remaining two are positioned on the pyramid surface (14). It is positioning.

16. It is a solar cell according to claim 15, and its characteristic is that it has 5 on a pyramid surface (13). It contains positioned phosphorus (11).

17. It is a solar cell according to claim 15, and its characteristic is that it is made of the aforementioned p-type polycrystalline silicon (4) The tunnel oxide (3) is located underneath.

18. According to claim 17, it is a solar cell with the characteristics of a pyramid surface (13) and a flat surface (14) It contains a SiNx passivation layer (7) positioned on it. 10 19. It is a solar cell according to claim 18, and its characteristic is that it is positioned on a flat surface (14). It contains an Al2Ox passivation layer (6).

20. A solar cell according to claim 1, whose characteristic is that a crystalline silicon absorber is arranged in a pyramid. at least one p-type polycrystalline silicon (4) in contact with the surface (13) It contains metal contacts (8). 15 21. A solar cell according to claim 20, whose characteristic is that the aforementioned crystalline silicon absorber is of the p-type. It is a crystalline silicon absorber (1).

22. According to claim 21, it is a solar cell, the characteristic of which is that it is positioned on a flat surface (14). It contains an n-type polycrystalline silicon (5).

23. According to claim 22, it is a solar cell with the characteristic of being 20 under p-type polycrystalline silicon (4). It contains tunnel oxide (3).

24. A solar cell according to claim 20, characterized by having an n-type crystalline silicon absorber. It is a crystalline silicon absorber (9).

25. It is a solar cell according to claim 24, and its characteristic is that it is on a pyramid surface (13). It contains positioned boron (10). 25 26. It is a sub-cell according to claim 1, and its characteristic is that the mentioned Al2Ox passivation layer (6) via atomic layer deposition or plasma-assisted chemical vapor deposition It is the accumulation of.

27. According to claim 1, it is a sub-cell and its characteristic is that the SiNx passivation layer (7) plasma It is deposition via assisted chemical vapor deposition. 30