Resin composition, laminate, semiconductor chip with resin composition layer, mounting board for semiconductor chip with resin composition layer, and semiconductor device

Abstract

A resin composition containing: an aminotriazine novolac resin (A), at least one compound (B) selected from the group consisting of maleimide compounds (BA) and citraconimide compounds (BB), and an inorganic filler (D), wherein the inorganic filler (D) contains an inorganic filler (D1) having at least one functional group (d) selected from the group consisting of a (meth)acryl group, vinyl group, styryl group, and phenyl group, the compound (B) contains a compound (B1) and a compound (B2), the compound (B1) is at least one compound selected from the group consisting of maleimide compounds (BA-1) with a weight average molecular weight of at least

Description

[Technical Field]

[0001] This invention relates to a resin composition, a laminate, a semiconductor wafer having a resin composition layer, a substrate for mounting a semiconductor wafer having a resin composition layer, and a semiconductor device. More specifically, this invention relates to a resin composition useful as a bottom filler. [Previous Technology]

[0002] In recent years, with the miniaturization and high performance of semiconductor devices, flip-chip mounting has attracted attention as a method for mounting semiconductor wafers (hereinafter sometimes referred to as "wafers") on semiconductor wafer mounting substrates (hereinafter sometimes referred to as "substrates"). In flip-chip mounting, the process of filling the gap between the wafer and the substrate with an underfill material and then hardening it is common. Alternatively, there is a process of filling the wafer or substrate with an underfill material (also called pre-coated underfill material) and then bonding the wafer, underfill material, and substrate together.

[0003] In flip-chip mounting, among the important characteristics required of the underfill material are: maintaining reliable insulation. Therefore, in the process of manufacturing semiconductor devices, there must be no voids (bubbles) between the underfill material and the wafer and substrate, and the hardened underfill material must be prevented from peeling off from the wafer and substrate.

[0004] Patent Document 1 describes the use of a free radical polymerizable monomer as a bottom filler in the main resin. Patent Document 1 also describes the incorporation of a silane coupling agent to improve adhesion to the wafer. [Prior Art Documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2015-503220 [Summary of the Invention]

[0006] [The problem the invention aims to solve]

[0007] However, generally speaking, free radical polymerizable monomers harden quickly, and thus harden before a sufficient number of bonds are formed between the reaction sites of the silane coupling agent and the silanol groups on the wafer surface. Therefore, the underfill material described in Patent Document 1 cannot achieve sufficient adhesion and bonding between the resin composition and the substrate such as the wafer and printed circuit board, resulting in a tendency to generate voids. Furthermore, since the resin composition hardens before filling the unevenness on the surface of the wafer and substrate, the underfill material described in Patent Document 1 also has the problem of not being able to sufficiently achieve an anchoring effect useful for adhesion.

[0008] This invention was made in view of the aforementioned problems, and aims to provide a resin composition with low porosity and excellent wafer adhesion, a laminate, a semiconductor wafer having a resin composition layer, a substrate for mounting the semiconductor wafer having a resin composition layer, and a semiconductor device. [Means for Solving the Problem]

[0009] After in-depth research in order to solve the above-mentioned problems existing in the prior art, the inventors discovered that a resin composition containing specific components can solve the aforementioned problems and even complete the present invention.

[0010] That is, the present invention includes the following. [1] A resin composition comprising: an aminotriphenyl phenolic varnish resin (A), a compound (B) selected from the group consisting of maleimide compound (BA) and limonene imide compound (BB), and an inorganic filler (D); the aforementioned inorganic filler (D) comprises an inorganic filler (D1) having a functional group (d) selected from the group consisting of (meth)acrylate, vinyl, styrene, and phenyl; the aforementioned compound (B) comprises compound (B1) and compound (B2); the aforementioned compound (B1) is a compound (BA-1) selected from the group consisting of maleimide compound (BA-1) with a weight average molecular weight of 3,000 or more and 9,500 or less, and limonene imide compound (BB-1) with a weight average molecular weight of 3,000 or more and 9,500 or less. The aforementioned compound (B2) is selected from one or more of the group consisting of maleimide compounds (BA-2) with a weight average molecular weight of 300 or more but less than 3,000 and limonimide compounds (BB-2) with a weight average molecular weight of 300 or more but less than 3,000, wherein the aforementioned weight average molecular weight is a value converted to standard polystyrene by gel permeation chromatography. [2] The resin composition described in [1] further contains silicon atoms in the aforementioned functional group (d). [3] The resin composition described in [1] or [2] contains the aforementioned inorganic filler (D1) comprising the reaction product of a compound (d1) having the aforementioned functional group (d) and an inorganic filler (d2) not having the aforementioned functional group (d). [4] The resin composition as described in [3], wherein the aforementioned compound (d1) having a functional group (d) comprises one or more silane compounds selected from the group consisting of silane compounds having (meth)acrylic acid groups and / or vinyl groups and silane compounds having styrene groups. [5] The resin composition as described in [3] or [4], wherein the aforementioned inorganic filler (d2) comprises one or more silane compounds selected from the group consisting of silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide. [6] The resin composition described in any one of [3] to [5], wherein the aforementioned compound (d1) having a functional group (d) comprises one or more silane compounds selected from the group consisting of silane compounds having (meth)acrylic acid groups and / or vinyl groups and silane compounds having styrene groups, and the aforementioned inorganic filler (d2) comprises one or more silane compounds selected from the group consisting of silicon dioxide, aluminum hydroxide, aluminum oxide, borosilicate, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide. [7] The resin composition described in any one of [1] to [6], wherein the average particle size of the aforementioned inorganic filler (D) is 3 μm or less.[8] The resin composition described in any one of [1] to [7], wherein the content of the aforementioned inorganic filler (D) is 20 to 500 parts by mass relative to 100 parts by mass of the aforementioned aminotriphenolic varnish resin (A) and the aforementioned compound (B). [9] The resin composition described in any one of [1] to [8], wherein the aforementioned aminotriphenolic varnish resin (A) comprises one or more compounds selected from the group consisting of compounds represented by formula (1) and compounds represented by formula (2). [Chemical 1] In formula (1), R1 independently represents a hydrogen atom, methyl, or ethyl, l, m, and n independently represent integers from 0 to 10, and (l+m+n) represents integers from 1 to 20. [Chemical 2] In formula (2), R2 independently represents a hydrogen atom, methyl, or ethyl, o, p, q, r, and s independently represent integers from 0 to 10, and (o+p+q+r+s) represents integers from 1 to 20.

[10] The resin composition described in any of [1] to [9] is wherein the content of the aforementioned compound (B1) is 45 parts by mass or more and 90 parts by mass or less relative to the total of 100 parts by mass of the aforementioned compound (B1) and the aforementioned compound (B2), and the content of the aforementioned compound (B2) is 10 parts by mass or more and 55 parts by mass or less relative to the total of 100 parts by mass of the aforementioned compound (B1) and the aforementioned compound (B2).

[11] The resin composition described in any one of [1] to

[10] , wherein the aforementioned maleimide compound (BA-1) comprises one or more of the group consisting of a maleimide compound represented by the following formula (3), a bismaleimide compound containing a constituent unit represented by the following formula (4), and a bismaleimide compound containing maleimide groups at both ends of the molecular chain. [Chemical 3] In the formula, n3 represents an integer from 1 to 30. [Chemical 4] In the formula, R 11 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms; R 12 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms; R 13 each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms; and n 5 represents an integer of 1 or more and 10 or less.

[12] The resin composition described in any one of [1] to

[11] , wherein the aforementioned maleimine compound (BA-2) comprises one or more of the group consisting of maleimine compounds represented by the following formula (5) and maleimine compounds represented by the following formula (6). In formula [Chemical Engineering 5], R8 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and R9 each independently represents a hydrogen atom or a methyl group. In formula [Chemical Engineering 6], R10 each independently represents a hydrogen atom, an alkyl group with 1 to 5 carbon atoms, or a phenyl group, and n4 represents an integer from 1 to 10.

[13] The resin composition described in any one of [1] to

[12] further contains a fluxing agent (C).

[14] The resin composition described in

[13] wherein the fluxing agent (C) comprises a rosin-based resin.

[15] The resin composition described in any one of [1] to

[14] further contains a curing catalyst (E).

[16] The resin composition described in

[15] wherein the curing catalyst (E) comprises one or more compounds selected from the group consisting of organic peroxides and imidazole compounds.

[17] The resin composition described in any one of [1] to

[16] wherein the content of the aforementioned aminotriphenol varnish resin (A) is 1 to 60 parts by mass relative to 100 parts by mass of the aforementioned aminotriphenol varnish resin (A) and the aforementioned compound (B).

[18] The resin composition described in any one of [1] to

[17] , wherein the content of the aforementioned compound (B) is 40 to 85 parts by mass relative to 100 parts by mass of the aforementioned aminotriphenolic varnish resin (A) and the aforementioned compound (B).

[19] The resin composition described in any one of [1] to

[18] is used as a bottom filler.

[20] A laminate comprising: a support substrate, and a resin composition layer laminated on the aforementioned support substrate and containing the resin composition described in any one of [1] to

[19] .

[21] The laminate described in

[20] , wherein the thickness of the aforementioned resin composition layer is in the range of 5 to 500 μm.

[22] A semiconductor wafer having a resin composition layer comprising: a semiconductor wafer, and a layer laminated on the aforementioned semiconductor wafer and formed using the resin composition described in any one of [1] to

[19] .

[23] A semiconductor wafer mounting substrate having a resin composition layer comprises: a semiconductor wafer mounting substrate, and a layer stacked on the aforementioned semiconductor wafer mounting substrate and formed using a resin composition as described in any one of [1] to

[19] .

[24] A semiconductor device comprising: a semiconductor wafer having a resin composition layer as described in

[22] .

[25] A semiconductor device comprising: a semiconductor wafer mounting substrate having a resin composition layer as described in

[23] . [Effects of the invention].

[0011] According to the present invention, a resin composition with low porosity and excellent wafer adhesion, a laminate, a semiconductor wafer having a resin composition layer, a substrate for mounting a semiconductor wafer having a resin composition layer, and a semiconductor device can be provided.

Implementation Method

[0012] Hereinafter, a configuration for implementing the present invention (hereinafter referred to as "this configuration") will be described. Furthermore, the following configuration is merely an example to illustrate the present invention, and the present invention is not limited to this configuration.

[0013] Furthermore, in this embodiment, "(meth)acryloxy" means both "acryloxy" and its corresponding "methacryloxy", "(meth)acrylonitrile" means both "acrylonitrile" and its corresponding "methacrylonitrile", "(meth)acrylic acid" means both "acrylic acid" and its corresponding "methacrylic acid", "(meth)acrylate" means both "acrylate" and its corresponding "methacrylate", and "(meth)allyl" means both "allyl" and its corresponding "methylallyl". Also, unless otherwise specified, the "~" in this specification means that the values ​​at both ends are included as an upper and lower limit value, and the upper and lower limits are set to have the same unit.

[0014] Furthermore, in this embodiment, "solid resin component" or "solid resin component in resin composition" refers to the component in the resin composition excluding inorganic filler (D), hardening catalyst (E), and solvent unless otherwise specified. "100 parts by mass of solid resin component" means that the total of the component in the resin composition excluding inorganic filler (D), hardening catalyst (E), and solvent is 100 parts by mass.

[0015] [Resin Composition] The resin composition of this embodiment contains: aminotriphenylphenolic varnish resin (A) (hereinafter also referred to as "resin (A)"), one or more compounds (B) selected from the group consisting of maleic anhydride compound (BA) (hereinafter also referred to as "compound (BA)") and citronellal anhydride compound (BB) (hereinafter also referred to as "compound (BB)"), and inorganic filler (D), wherein the aforementioned inorganic filler (D) comprises inorganic filler (D1) having one or more functional groups (d) selected from the group consisting of (meth)acrylate, vinyl, styrene, and phenyl, and the aforementioned compound (B) comprises compound (B1) and compound (B2), the aforementioned compound Compound (B1) is selected from one or more compounds in the group consisting of maleimide compound (BA-1) with a weight average molecular weight of 3,000 or more and 9,500 or less, and limonene imide compound (BB-1) with a weight average molecular weight of 3,000 or more and 9,500 or less. Compound (B2) is selected from one or more compounds in the group consisting of maleimide compound (BA-2) with a weight average molecular weight of 300 or more and less than 3,000, and limonene imide compound (BB-2) with a weight average molecular weight of 300 or more and less than 3,000. The aforementioned weight average molecular weight is a value converted to standard polystyrene using gel permeation chromatography. Because of this configuration, the resin composition of this embodiment exhibits excellent low porosity and wafer adhesion. Due to these properties, the resin composition of this embodiment can be ideally used as an underfill material for flip-chip mounting.

[0016] The reason why a resin composition with low porosity and excellent wafer adhesion can be obtained in this embodiment has not been explained, but the inventors infer as follows. Generally, resin compositions with maleimide compounds and / or limonene imide compounds as the main components cannot obtain sufficient wafer adhesion and are not easy to suppress voids caused by heat during semiconductor wafer mounting or thermosetting (post-curing), or peeling from the cured wafer and substrate. Here, the aminotrimethylphenolic varnish resin (A) has a trimethylamine backbone, so it can react well with maleimide groups and / or limonene imide groups. Therefore, resin (A) can ideally control the rate of free radical polymerization of compound (B), and the resin composition containing resin (A) and compound (B) can be cured while adhering to the uneven edges present on the surface of the wafer and substrate. Therefore, this resin composition exhibits excellent anchoring effect on semiconductor wafers and substrates, and demonstrates excellent low porosity, resulting in good wafer adhesion. Furthermore, resin (A) is based on a phenolic varnish resin backbone bonded to a triac, thus retaining a large number of hydroxyl and amino groups even after curing. Therefore, after curing, these groups and the silanol groups on the wafer surface still form good chemical bonds, resulting in even better wafer adhesion in addition to the aforementioned anchoring effect and the chemical bonds formed therein. Such an effect is insufficient from a practical point of view for phenolic varnish resins without a triac backbone. Considering the above, a resin composition containing resin (A) and compound (B) exhibits excellent wafer adhesion, and with such a resin composition, porosity can be ideally suppressed even during semiconductor wafer mounting and thermal curing (post-curing). Furthermore, it is believed that even after semiconductor wafer mounting and post-curing, the peeling of cured material from the wafer and substrate can still be ideally suppressed. In addition, the inorganic filler (D1) contained in the resin composition of this embodiment has specific functional groups (d), and these functional groups (d) have high reactivity with the compound (B). Therefore, it is believed that the heat generated during semiconductor wafer mounting and post-curing will form a strong chemical bond between the compound (B) and the inorganic filler (D1). It is believed that this will suppress voids that may occur during semiconductor wafer mounting and post-curing, and that the peeling of cured material from the wafer and substrate can still be effectively suppressed even after semiconductor wafer mounting and post-curing. As described above, it is presumed that through the synergistic interaction between resin (A) and compound (B) and between compound (B) and inorganic filler (D1), the resin composition of this embodiment will possess excellent wafer adhesion. Furthermore, by using such a resin composition, voids that are typically generated by heat during semiconductor wafer mounting and thermal curing (post-curing) can be ideally suppressed. Also, considering the same point, it is presumed that even after semiconductor wafer mounting and post-curing, the peeling of cured material from the wafer and substrate can still be ideally suppressed. However, the reasons are not limited to this.

[0017] [Aminotrifluorophenolic varnish resin (A)] In the resin composition of this embodiment, considering the viewpoint that it can obtain excellent reactivity with compound (B) and can obtain a resin composition with low porosity and excellent wafer adhesion, it contains aminotrifluorophenolic varnish resin (A). The aminotrifluorophenolic varnish resin (A) can be a phenol-formaldehyde resin (phenolic resin) having a trifluoro ring within its molecule, or a known resin can be used. Such aminotrifluorophenolic varnish resin (A) can be manufactured using known methods, for example, by modifying phenolic resin with nitrogen compounds such as melamine. Aminotriphenolic varnish resin (A) can be used alone or in appropriate mixtures of two or more.

[0018] In the resin composition of this embodiment, the content of aminotriphenolic varnish resin (A) is preferably 1 to 60 parts by mass relative to a total of 100 parts by mass of aminotriphenolic varnish resin (A) and compound (B), considering that it can obtain good reactivity with compound (B) and better low porosity and wafer adhesion. Considering that compound (B) can achieve excellent reactivity and further excellent low porosity and wafer adhesion, the content of aminotriphenolic resin (A) relative to 100 parts by weight of aminotriphenolic resin (A) and compound (B) is preferably 15-60 parts by weight, even better at 15-50 parts by weight, even better at 17-45 parts by weight, and even more ideal at 20-40 parts by weight.

[0019] The aminotrifluorophenolic varnish resin (A), considering its excellent reactivity with compound (B) and the potential for further improvements in low porosity and wafer adhesion, preferably has a weight-average molecular weight of 300-9,500, more preferably 500-5,000. Furthermore, in this specification, the weight-average molecular weight is a value converted to standard polystyrene using GPC (gel permeation chromatography).

[0020] Aminotrifluorophenolic varnish resin (A), considering that it can obtain excellent reactivity with compound (B) and further excellent low porosity and wafer adhesion, its nitrogen content in 100% by weight of aminotrifluorophenolic varnish resin is preferably 10-25% by weight, and 15-25% by weight is more preferred.

[0021] The aminotrifluorophenolic varnish resin (A), considering its excellent reactivity with compound (B) and the further excellent low porosity and wafer adhesion, preferably has a hydroxyl equivalent of 80~200 g / eq., more preferably 100~180 g / eq., and even more preferably 130~170 g / eq., considering the further excellent reactivity and lower porosity with compound (B) and the further excellent wafer adhesion. Furthermore, in this embodiment, the hydroxyl equivalent is expressed as the number of mg of potassium hydroxide required to acetylate the hydroxyl groups contained in 1 g of the aminotrifluorophenolic varnish resin. Specifically, the measurement is based on JIS K 0070.

[0022] Aminotriphenylphenolic varnish resin (A), considering that it can obtain better reactivity with compound (B) and can obtain further better low porosity and wafer adhesion, preferably includes one or more compounds selected from the group consisting of compounds represented by formula (1) and compounds represented by formula (2).

[0023] [Chemical 7]

[0024] In formula (1), R1 independently represents a hydrogen atom, a methyl group, or an ethyl group. Considering the possibility of obtaining further improved reactivity with compound (B), as well as further improved low porosity and wafer adhesion, R1 should preferably be a hydrogen atom or a methyl group. l, m, and n independently represent integers from 0 to 10. Considering the possibility of obtaining further improved reactivity with compound (B), as well as further improved low porosity and wafer adhesion, l, m, and n should preferably be integers from 1 to 6. (l+m+n) represents integers from 1 to 20. Considering that it can achieve further improved reactivity with compound (B), as well as further improved low porosity and wafer adhesion, (l+m+n) should preferably be an integer from 3 to 18. In addition, the compound represented by formula (1) can also be, for example, a mixture of compounds containing the base of R1 in formula (1) or compounds with different values ​​of R1; compounds with different values ​​of l, m, and n; and compounds with different values ​​of (l+m+n).

[0025] [Chemical 8]

[0026] In formula (2), R2 independently represents a hydrogen atom, a methyl group, or an ethyl group. Considering the need for further improved reactivity of the compound (B), and further improved low porosity and wafer adhesion, R2 should preferably be a hydrogen atom or a methyl group. o, p, q, r, and s should each independently represent an integer from 0 to 10. Considering the need for further improved reactivity of the compound (B), and further improved low porosity and wafer adhesion, o, p, q, r, and s should each independently represent an integer from 1 to 4. (o+p+q+r+s) represents an integer from 1 to 20. Considering the need for further improved reactivity of the compound (B), and further improved low porosity and wafer adhesion, (o+p+q+r+s) should preferably be an integer from 5 to 20. In addition, the compound represented by formula (2) may also be, for example, a mixture of compounds containing the R 2 group in formula (2) or compounds with different values ​​of R 2; compounds with different values ​​of o, p, q, r, and s; and compounds with different values ​​of (o+p+q+r+s).

[0027] Considering that the compound (B) can obtain further superior reactivity, as well as further superior low porosity and wafer adhesion, the aminotriphenolic varnish resin (A) is preferably a mixture of the compound represented by formula (1) and the compound represented by formula (2). Considering that the compound (B) can obtain further superior reactivity, as well as further superior low porosity and wafer adhesion, the mass ratio of the compound represented by formula (1) to the compound represented by formula (2) (parts by mass of the compound represented by formula (1):parts by mass of the compound represented by formula (2)) is preferably 50:50 to 90:10, and more preferably 60:40 to 85:15.

[0028] Aminotriphenylphenolic varnish resin (A) can also be commercially available products, such as: LA-1356 (trade name), LA-3018-50P (trade name), LA-7052 (trade name), LA-7054 (trade name), and LA-7751 (trade name) manufactured by DIC.

[0029] [Compound (B)] The resin composition of this embodiment, from the viewpoint of low porosity and excellent wafer adhesion, contains one or more compounds (B) selected from the group consisting of maleimide compounds (BA) and limonene imide compounds (BB). There is no particular limitation if compound (B) contains one or more of the group consisting of maleimide groups and limonene imide groups. Compound (B) should preferably not exhibit reactivity with the flux activator (C) described later. Compound (B) can be used alone or in combination of two or more.

[0030] In this embodiment, the compound (B) preferably contains a maleimide compound (BA), considering its superior reactivity with the aminotriphenyl phenolic varnish resin (A) and the resulting superior low porosity and wafer adhesion. Furthermore, compared to epoxy compounds, the maleimide compound (BA) is less prone to significant reaction with flux activators during storage or due to heat treatment, thus reducing the likelihood of flux activator deactivation.

[0031] Compound (B) includes compound (B1) and compound (B2), wherein compound (B1) is selected from one or more of the group consisting of maleimide compound (BA-1) with a weight average molecular weight of 3,000 or more and 9,500 or less and limonimide compound (BB-1) with a weight average molecular weight of 3,000 or more and 9,500 or less, and compound (B2) is selected from one or more of the group consisting of maleimide compound (BA-2) with a weight average molecular weight of 300 or more and less than 3,000 and limonimide compound (BB-2) with a weight average molecular weight of 300 or more and less than 3,000.

[0032] The resin composition of this embodiment, by containing compounds (B1) and (B2) as compound (B), further enhances the low porosity and wafer adhesion. The reasons for this are not yet clearly explained, but the inventors deduce the following: It is speculated that by containing the relatively high molecular weight compound (B1), the resin composition can alleviate the stress generated during curing shrinkage during semiconductor wafer mounting or thermosetting (post-curing). Therefore, the improved adhesion effect brought about by the use of resin (A) will be further enhanced. Furthermore, the resin composition also contains the relatively low molecular weight compound (B2). Therefore, the crosslinking density can be improved during semiconductor wafer mounting or thermosetting (post-curing), and the stress relief brought about by the presence of resin (A) and compound (B1) can further enhance the exhibited adhesion. However, the reasons are not limited to this.

[0033] Compound (B1) may include a maleimide compound (BA-1) from the viewpoint that it can obtain even better low porosity and wafer adhesion.

[0034] Compound (B2) may include a maleimide compound (BA-2) from the viewpoint that it can obtain even better low porosity and wafer adhesion.

[0035] Maleimine compound (BA-1), considering the possibility of obtaining even better low porosity and wafer adhesion, its weight average molecular weight should preferably be 3,200 or more and 8,000 or less, preferably 3,300 or more and 6,000 or less.

[0036] Limonene imine compound (BB-1), considering the possibility of obtaining even better low porosity and wafer adhesion, its weight average molecular weight should preferably be above 3,200 and below 8,000, and more preferably above 3,300 and below 6,000.

[0037] Maleimine compound (BA-2), considering the possibility of obtaining even better low porosity and wafer adhesion, its weight average molecular weight should preferably be above 350 and below 2,800, and preferably above 400 and below 2,500.

[0038] Limonene imine compound (BB-2), considering the possibility of obtaining even better low porosity and wafer adhesion, its weight average molecular weight should preferably be above 350 and below 2,800, and preferably above 400 and below 2,500.

[0039] (Maleimimine Compound (BA)) There are no particular limitations on whether the maleimimine compound (BA) is a resin or compound having one or more maleimimine groups in its molecule. One type of maleimimine compound (BA) or a mixture of two or more types may be used. Examples of such maleimimine compounds (BA) include: N-phenylmaleimimine, N-hydroxyphenylmaleimimine, bis(4-maleimiminephenyl)methane, 4,4-diphenylmethane bismaleimimine, bis(3,5-dimethyl-4-maleimiminephenyl)methane, bis(3-ethyl-5-methyl-4-maleimiminephenyl)methane, bis(3,5-diethyl-4-maleimiminephenyl)methane, phenylmethane maleimimine, o- Benzenebismaleimide, m-Benzenebismaleimide, p-Benzenebismaleimide, 2,2-bis(4-(4-maleiminophenoxy)-phenyl)propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, 4-methyl-1,3-epenylphenylbismaleimide, 1,6-bismaleimide-(2,2,4-trimethyl)hexane, 4,4-diphenyl ether bismaleimide, 4,4-diphenyl bismaleimide 1,3-bis(3-maleiminophenoxy)benzene, 1,3-bis(4-maleiminophenoxy)benzene, polyphenylmethane maleimide, phenolic varnish resin type maleimide compounds, biphenyl aralkyl type maleimide compounds, 2,2-bis(4-(4-maleiminophenoxy)phenyl)propane, 1,2-bis(maleimino)ethane, 1,4-bis(maleimino)butane, 1,6-bis(maleimino)hexane, N The compounds (B) include N'-1,3-epenylphenyldimaleimide, N,N'-1,4-epenylphenyldimaleimide, N-phenylmaleimide, maleimide compounds represented by formula (3), bismaleimide compounds containing a constituent unit represented by formula (4) and containing maleimide groups at both ends of the molecular chain, maleimide compounds represented by formula (5), maleimide compounds represented by formula (6), and maleimide compounds represented by formula (7). Compound (B) may also be included in the resin composition of this embodiment in the form of a prepolymer obtained by polymerizing maleimide compounds, or a prepolymer obtained by polymerizing maleimide compounds and other compounds such as amine compounds.

[0040] [Chemical 9]

[0041] In formula (3), n3 represents an integer from 1 to 30.

[0042] [Chemical 10]

[0043] In formula (4), R 11 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. R 12 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. R 13 each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. n 5 each independently represents an integer of 1 or more and 10 or less. In addition, a detailed description of the constituent units represented by formula (4) is given below.

[0044] [Chemical 11]

[0045] In formula (5), R8 independently represents a hydrogen atom, a methyl group, or an ethyl group. R9 independently represents a hydrogen atom or a methyl group.

[0046] [Chemical 12]

[0047] In formula (6), R 10 independently represents a hydrogen atom, an alkyl group with 1 to 5 carbon atoms, or a phenyl group. n4 represents an integer from 1 to 10. R 10 is preferably a hydrogen atom.

[0048] [Chemical 13]

[0049] In formula (7), R10 independently represents a hydrogen atom or a methyl group, n2 represents an integer greater than or equal to 1, and preferably represents an integer from 1 to 10.

[0050] Next, the structure of a bismaleimine compound containing the constituent unit represented by formula (4) and containing maleimine groups at both ends of the molecular chain will be described. The bismaleimine compound may also have multiple constituent units represented by formula (4), in which case R11, R12, and R13 in the multiple constituent units represented by formula (4) may be the same or different. Furthermore, the bismaleimine compound may also be a mixture of compounds in which at least one of the values ​​of R11, R12, and R13 in the constituent unit represented by formula (4) and the constituent unit of formula (4) in the bismaleimine compound is a different compound. In the constituent unit represented by formula (4), R11 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. R 11, considering the view that the resin composition has ideal viscosity when mounting the resin composition layer of the wafer, and that the increase in melt viscosity during mounting can be ideally controlled, preferably a linear or branched alkyl group, with a linear alkyl group being more preferred.

[0051] The number of carbon atoms in the alkyl group is preferably 2 to 14, and 4 to 12 is even better, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer of the wafer and that the increase in melt viscosity during mounting can be more ideally controlled. Examples of linear or branched alkyl groups include: methylene, ethyl alkyl, propyl alkyl, 2,2-dimethylpropyl alkyl, butyl alkyl, pentyl alkyl, hexyl alkyl, heptyl alkyl, octyl alkyl, nonyl alkyl, decyl alkyl, undecyl alkyl, dodecyl alkyl, tridecyl alkyl, tetradecyl alkyl, pentadecyl alkyl, hexadecyl alkyl, neopentyl alkyl, dimethyl butyl alkyl, methyl hexyl alkyl, ethyl hexyl alkyl, dimethyl hexyl alkyl, trimethyl hexyl alkyl, dimethyl heptyl alkyl, trimethyl heptyl alkyl, tetramethyl heptyl alkyl, ethyl heptyl alkyl, methyl octyl alkyl, nonyl alkyl, methyl decyl alkyl, methyl undecyl alkyl, methyl dodecyl alkyl, methyl tridecyl alkyl, methyl tetradecyl alkyl, and methyl pentadecyl alkyl.

[0052] The number of carbon atoms in the alkenyl group is preferably 2 to 14, and more preferably 4 to 12, considering that the resin composition layer of the wafer has a more ideal viscosity and that the increase in melt viscosity during installation can be more ideally controlled. Examples of linear or branched alkenyl groups include: vinyl, 1-methylvinyl, allyl, propenyl, isopropenyl, 1-butenyl, 2-butenyl, 1-pentenyl, 2-pentenyl, isopentenyl, cyclopentenyl, cyclohexenyl, and dicyclopentadienyl.

[0053] In the constituent unit represented by formula (4), R 12 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. Considering that the resin composition has an ideal viscosity when mounting the resin composition layer of the wafer, and that the increase in melt viscosity during mounting can be ideally controlled, R 12 is preferably a linear or branched alkyl group, and a linear alkyl group is more preferred.

[0054] The carbon number of the alkyl group is preferably 2 to 14, and more preferably 4 to 12, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer of the wafer, and that the increase in melt viscosity during mounting can be more ideally controlled. Linear or branched alkyl groups can refer to R 11 mentioned above.

[0055] The carbon number of the enyl group is preferably 2 to 14, and more preferably 4 to 12, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer of the wafer, and that the increase in melt viscosity during mounting can be more ideally controlled. For linear or branched enyl groups, refer to R 11 mentioned above.

[0056] In the constituent units represented by formula (4), R11 and R12 can be the same or different. Considering the view that it is easier to synthesize bismaleimine compounds, they should be the same.

[0057] In the constituent unit represented by formula (4), R 13 independently represents a hydrogen atom, a straight-chain or branched alkyl group having 1 to 16 carbon atoms, or a straight-chain or branched alkenyl group having 2 to 16 carbon atoms. Considering that the resin composition has an ideal viscosity when mounting the resin composition layer of the wafer, and that the increase in melt viscosity during mounting can be ideally controlled, R 13 is preferably a hydrogen atom or a straight-chain or branched alkyl group having 1 to 16 carbon atoms. It is even better if 1 to 5 of the R 13 groups are straight-chain or branched alkyl groups having 1 to 16 carbon atoms, and the remaining group (R 13) is a hydrogen atom. It is even better if 1 to 3 of the R 13 groups are straight-chain or branched alkyl groups having 1 to 16 carbon atoms, and the remaining group (R 13) is a hydrogen atom.

[0058] The number of carbon atoms in the alkyl group is preferably 2 to 14, and more preferably 4 to 12, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer of the wafer, and that the increase in melt viscosity during mounting can be more ideally controlled. Examples of linear or branched alkyl groups include: methyl, ethyl, n-propyl, isopropyl, 1-ethylpropyl, n-butyl, 2-butyl, isobutyl, tributyl, n-pentyl, 2-pentyl, tributyl, 2-methylbutyl, 3-methylbutyl, 2,2-dimethylpropyl, n-hexyl, 2-hexyl, 3-hexyl, n-heptyl, n-octyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylpentane-3-yl, and n-nonyl.

[0059] The number of carbon atoms in the alkenyl group is preferably 2 to 14, with 4 to 12 being more preferable, considering that the resin composition layer has a more ideal viscosity during mounting and that the increase in melt viscosity during mounting can be more effectively controlled. Examples of linear or branched alkenyl groups include vinyl, allyl, 4-pentenyl, isopropenyl, isopentenyl, 2-heptenyl, 2-octenyl, and 2-nonenyl.

[0060] In the constituent unit represented by formula (4), n5 represents an integer from 1 to 10.

[0061] Dimaleimide compounds have maleimide groups at both ends of their molecular chains. "Both ends" refers to the ends of the molecular chains of a bismaleimide compound. For example, when the constituent unit represented by formula (4) is located at the end of the molecular chain of a bismaleimide compound, it means that a maleimide group is present at the end of the R 11 molecular chain, or at the end of the molecular chain containing the N atom of the maleimide ring, or at the ends on both sides. Bismaleimide compounds may also have maleimide groups other than at the ends of their molecular chains. The maleimide group is represented by formula (8), where the N atom is bonded to the molecular chain of the bismaleimide compound. Furthermore, the maleimine groups bonded to bismaleimine compounds can be all the same or different, but the maleimine groups at both ends of the molecular chain should preferably be the same.

[0062] [Chemical 14]

[0063] In formula (8), R 11 each independently represents a hydrogen atom or a straight-chain or branched alkyl group having 1 to 4 carbon atoms. From the viewpoint of more ideally reacting with resin (A), R 11 should preferably be a hydrogen atom. From the viewpoint of more ideally reacting with resin (A), the number of carbon atoms of the alkyl group should preferably be 1 to 3, and 1 to 2 is more preferred. The straight-chain or branched alkyl group can refer to R 13 mentioned above.

[0064] Examples of such bismaleimine compounds include maleimine compounds represented by formula (9). They can be used alone or in combination of two or more compounds with different numbers of repetitions of a in formula (9).

[0065] [Chemical 15]

[0066] In formula (9), a represents an integer from 1 to 10. Considering that the resin composition layer of the wafer has a more ideal viscosity and the increase of melt viscosity during installation can be more ideally controlled, a is preferably an integer from 1 to 6. The maleimide compound represented by formula (9) can also be a mixture of different compounds.

[0067] Considering that the resin (A) can achieve better reactivity, lower porosity and better wafer adhesion, and a resin composition with excellent solvent solubility, the maleimide compound (BA) preferably contains, among the above, 2'-bis(4-(4-maleiminophenoxy)phenyl)propane, 1,2-bis(maleimino)ethane, 1,4-bis(maleimino)butane, 1,6-bis(maleimino)hexane, N,N'-1,3-epenylphenyldimaleimide, N,N'-1,4-epenylphenyldimaleimide, N-phenylmaleimide, maleimide compound represented by formula (3) above, containing the constituent unit represented by formula (4) above, and in the molecular chain It is more preferable to contain one or more of the following groups: bismaleimide compounds with maleimide groups at both ends, maleimide compounds represented by formula (5) above, maleimide compounds represented by formula (6) above, and maleimide compounds represented by formula (7) above, and preferably containing one or more of the following groups: bismaleimide compounds with maleimide groups at both ends of the molecular chain, maleimide compounds represented by formula (5) above, maleimide compounds represented by formula (6) above, and maleimide compounds represented by formula (7) above. Furthermore, considering that the maleimide compound (BA) has the potential to achieve further superior reactivity with the resin (A) and further superior low porosity, wafer adhesion, and solvent solubility, it is preferable to include one or more of the following groups: maleimide compounds represented by formula (3) above, bismaleimide compounds containing the constituent unit represented by formula (4) above and maleimide groups at both ends of the molecular chain, maleimide compounds represented by formula (5) above, and maleimide compounds represented by formula (6) above.

[0068] Maleimine compound (BA-1), considering that it can obtain further superior reactivity with resin (A) and further superior low porosity, wafer adhesion and solvent solubility, preferably contains one or more of the group consisting of maleimine compound represented by formula (3) above, constituent unit represented by formula (4) above and bismaleimine compound containing maleimine groups at both ends of the molecular chain.

[0069] Maleimine compound (BA-2), considering that it can obtain further superior reactivity with resin (A) and further superior low porosity, wafer adhesion and solvent solubility, preferably contains one or more of the group consisting of maleimine compounds represented by formula (5) above and maleimine compounds represented by formula (6) above.

[0070] Mandimidin compounds may also be commercially available. Examples of 2,2'-bis(4-(4-maleiminophenoxy)phenyl)propane include: BMI-80 (trade name) produced by K.I. Chemical Co., Ltd. Examples of maleimimidin compounds represented by formula (3) include: BMI-1000P (trade name, n3=14 (average value) in formula (3), weight average molecular weight: 3,700) produced by K.I. Chemical Co., Ltd., BMI-650P (trade name, n3=9 (average value) in formula (3)), BMI-250P (trade name, n3=3~8 (average value) in formula (3)), CUA-4 (trade name, n3=1 in formula (3)), etc. Examples of bismaleimine compounds containing the constituent unit represented by formula (4) and containing maleimine groups at both ends of the molecular chain include: MIZ-001 manufactured by Nippon Kayaku (stock) (trade name, containing maleimine compound represented by formula (9), and being a mixture of a series 1 to 6 (integers) in formula (9), weight average molecular weight: 3,900). Examples of maleimine compounds represented by formula (5) include: BMI-70 manufactured by K.I. Chemical (stock) (trade name; bis(3-ethyl-5-methyl-4-maleiminophenyl)methane, weight average molecular weight: 550). Examples of maleimide compounds represented by formula (6) include: MIR-3000-70MT manufactured by Nippon Kayaku Co., Ltd. (trade name, where R 10 in formula (6) consists entirely of hydrogen atoms and is a mixture of n4 series 1 to 10, with a weight average molecular weight of 1,050). Examples of maleimide compounds represented by formula (7) include: BMI-2300 manufactured by Yamato Kasei Corporation.

[0071] (Limonene diimide compound (BB)) There are no particular limitations on limonene diimide compounds (BB), but examples include: o-phenylbisimide, m-phenylbisimide, p-phenylbisimide, 4,4-diphenylmethanebisimide, 2,2-bis[4-(4-limonene diimide phenoxy)phenyl]propane, bis(3,5-dimethyl-4-limonene diimide phenyl)methane, bis(3-ethyl-5-methyl-4-limonene diimide phenyl)methane, bis(3,5-diethyl-4-limonene diimide phenyl)methane, 1,3-epoxymethylbis(limonene diimide), N-[3-bis(trimethylsilyl)amino-1-propane] [3-[3-bis(triethylsilyl)amino-1-propyl] limonene, N-[3-bis(triphenylsilyl)amino-1-propyl] limonene, N,N'-(m-phenylenediamine)di-limonene, and N-[3-(methylenesuccinimidemethyl)benzyllimonene, limonene compounds represented by formula (10), di-limonene compounds containing the constituent unit represented by formula (4) above and containing limonene groups at both ends of the molecular chain, limonene compounds represented by formula (11), and limonene compounds represented by formula (12). Additionally, di-limonene compounds may refer to the above-mentioned dimaleimide compounds. The detailed description of the constituent units represented by formula (4) is as described above. Regarding the limonene imine group, in formula (8) above, at least one group in R 11 is methyl. Otherwise, refer to the structure of formula (8). Limonene imine compound (BB) can be used with one or more of the same compounds.

[0072] Considering that the resin (A) can achieve better reactivity, lower porosity and better wafer adhesion, and a resin composition with good solvent solubility, the limonene imine compound (BB) preferably contains one or more of the following groups: a limonene imine compound represented by formula (10), a bis-limonene imine compound containing a constituent unit represented by formula (4) and bis-limonene imine compounds containing limonene imine groups at both ends of the molecular chain, a limonene imine compound represented by formula (11), and a limonene imine compound represented by formula (12).

[0073] The limonene imine compound (BB-1) is preferably a limonene imine compound represented by the following formula (10) and / or a bis-limonene imine compound containing the constituent unit represented by the above formula (4) and containing limonene imine groups at both ends of the molecular chain.

[0074] [Chemical 16]

[0075] In formula (10), n 6 represents an integer from 1 to 30.

[0076] The limonene imide compound (BB-2) is preferably a limonene imide compound represented by formula (11) and / or a limonene imide compound represented by formula (12), considering that it can obtain further superior reactivity with resin (A) and further superior low porosity, wafer adhesion and solvent solubility.

[0077] [Chemical 17]

[0078] In formula (11), R8 each independently represents a hydrogen atom, a methyl group, or an ethyl group. R9 each independently represents a hydrogen atom or a methyl group.

[0079] [Chemical 18]

[0080] In formula (12), R 10 independently represents a hydrogen atom or a methyl group, and n4 represents an integer greater than or equal to 1, preferably an integer from 1 to 10. R 10 is preferably a hydrogen atom.

[0081] In the resin composition of this embodiment, there is no particular limitation on the content of compound (B). Considering the view that it can obtain even better low porosity and wafer adhesion, the content is preferably 40 to 85 parts by mass relative to 100 parts by mass of aminotriphenolic varnish resin (A) and compound (B), more preferably 50 to 85 parts by mass, even more preferably 55 to 83 parts by mass, and even more preferably 60 to 80 parts by mass.

[0082] In the resin composition of this embodiment, considering the possibility of obtaining further superior reactivity with resin (A) and further superior low porosity, wafer adhesion, and solvent solubility, the content of compound (B1) is preferably 45 parts by mass or more and 90 parts by mass or less, more preferably 45 parts by mass or more and 85 parts by mass or less, and even more preferably 45 parts by mass or more and 78 parts by mass or less, relative to a total of 100 parts by mass of compounds (B1) and (B2). Furthermore, the content of compound (B2) is preferably 10 parts by mass or more and 55 parts by mass or less, more preferably 15 parts by mass or more and 55 parts by mass or less, and even more preferably 22 parts by mass or more and 55 parts by mass or less, relative to a total of 100 parts by mass of compounds (B1) and (B2).

[0083] In the resin composition of this embodiment, considering the possibility of obtaining further superior reactivity with resin (A), and further superior low porosity, wafer adhesion, and solvent solubility, the content of maleimide compound (BA-1) is preferably 45 to 90 parts by mass, more preferably 45 to 85 parts by mass, and even more preferably 45 to 78 parts by mass, relative to a total of 100 parts by mass of compounds (BA-1) and (BA-2). Furthermore, the content of maleimide compound (BA-2) is preferably 10 to 55 parts by mass, more preferably 15 to 55 parts by mass, and even more preferably 22 to 55 parts by mass, relative to a total of 100 parts by mass of compounds (BA-1) and (BA-2).

[0084] In the resin composition of this embodiment, considering the possibility of obtaining even better low porosity and wafer adhesion, the content of the limonene imide compound (BB-1) is preferably 45 to 90 parts by mass, more preferably 45 to 85 parts by mass, and even more preferably 45 to 78 parts by mass, relative to a total of 100 parts by mass of compounds (BB-1) and (BB-2). Furthermore, the content of the limonene imide compound (BB-2) is preferably 10 to 55 parts by mass, more preferably 15 to 55 parts by mass, and even more preferably 22 to 55 parts by mass, relative to a total of 100 parts by mass of compounds (BB-1) and (BB-2).

[0085] In the resin composition of this embodiment, considering the possibility of obtaining better low porosity and wafer adhesion, the content (total amount) of resin (A) and compound (B) relative to 100 parts by mass of resin solids is preferably 30 parts by mass or more, more preferably 50 parts by mass or more, more preferably 70 parts by mass or more, and may also be 80 parts by mass or more. The upper limit of the content (total amount) of resin (A) and compound (B) relative to 100 parts by mass of resin solids may also be less than 100 parts by mass or less than 95 parts by mass.

[0086] [Fluoride Activator (C)] In order to enable flux activity during flip-chip mounting, the resin composition of this embodiment preferably contains a flux activator (C). There are no particular limitations on whether the flux activator (C) is an organic compound having one or more acidic sites in its molecule. The acidic sites are preferably, for example, phosphate groups, phenolic hydroxyl groups, carboxyl groups, and sulfonic acid groups. Considering that using the resin composition of this embodiment as an underfill material in a semiconductor device would more effectively prevent the migration and corrosion of solder, copper, and other metals constituting the junction, phenolic hydroxyl groups or carboxyl groups are preferred. The flux activator (C) can be used alone or in appropriate mixtures of two or more.

[0087] There are no particular restrictions on the flux activator (C). In order to fully implement the removal of the oxide film at the joint, the acid dissociation constant pKa should be 3.8 or higher and 15.0 or lower. Considering the balance between the storage stability of the varnish and the storage stability of the laminate (with a bottom filler material that supports the substrate) containing the resin composition and the flux activity, it is more preferable to have a value of 4.0 or higher and 14.0 or lower.

[0088] The weight average molecular weight or molecular weight of the flux activator (C) in the resin composition of this embodiment is not particularly limited. However, considering the viewpoint that the flux activity should not evaporate before the bonding process is completed, i.e., before the oxide film at the joint is removed, the weight average molecular weight or molecular weight should preferably be 200 or more, preferably 250 or more. In order to have the mobility as a flux activator and obtain sufficient flux activity, the weight average molecular weight or molecular weight of the flux activator (C) should preferably be 8000 or less, preferably 1000 or less, and even more preferably 600 or less.

[0089] The fluxing agent (C) is not particularly limited, but can be listed as follows: rosin-based resins such as rosin acid, neoabietic acid, dehydroabietic acid, pimaric acid, isoparinic acid, palustric acid, bisphenolic acid, dihydroabietic acid, tetrahydroabietic acid, hydrogenated rosin esters, and rosin-modified maleic acid resins; diamine-based resins such as N,N'-bis(sulfinyl)-1,2-propanediamine and N,N'-bis(sulfinyl)-1,3-propanediamine; and 2-[bis(4-hydroxyphenyl)methyl]benzoic acid. These fluxing agents (C) are ideal from the perspective of good solubility in solvents, good storage stability of varnishes and good storage stability of bottom fillers with supporting substrates. Fluxing agents (C) containing rosin-based resins are even better.

[0090] Among these, considering the viewpoint of preventing deactivation caused by compound (B), it is preferable that the flux activator (C) includes one or more of the group consisting of dehydrorosinic acid, bisphenol A, dihydrorosinic acid, tetrahydrorosinic acid, hydrogenated rosin ester, rosin-modified maleic acid resin, N,N'-bis(sulfenyl)-1,2-propanediamine, and N,N'-bis(sulfenyl)-1,3-propanediamine. Furthermore, it is even more desirable that these flux activators have low reactivity and hardly cause any reaction with resin (A) and compound (B), while maintaining sufficient flux activity necessary for oxide film removal. Moreover, considering the possibility of obtaining even better flux activity, it is even more desirable if the flux activator (C) is a hydrogenated rosin ester.

[0091] Commercially available fluxing agents (C) may be used. Examples of rosin-based resins include: PINECRYSTAL (registered trademark, hereinafter the same) series KR-85 (trade name, hereinafter the same), KR-612, KR-614, KE-100, KE-311, PE-590, KE-359, KE-604, KR-120, KR-140, KR-614, D-6011, and KR-50M; MALKYD No.32 (all manufactured by Arakawa Chemical Industry Co., Ltd.), etc.

[0092] In the resin composition of this embodiment, there is no particular limitation on the content of flux activator (C). However, considering the reliability of insulation and ensuring sufficient flux activity during installation, it is preferable to have 5 to 70 parts by mass relative to a total of 100 parts by mass of aminotriphenolic varnish resin (A) and compound (B), preferably 10 to 50 parts by mass, and even more preferably 15 to 40 parts by mass.

[0093] [Inorganic Filler (D)] In the resin composition of this embodiment, an inorganic filler (D) is further contained to improve flame retardancy, improve thermal conductivity, and reduce the coefficient of thermal expansion. By using the inorganic filler (D), the flame retardancy and thermal conductivity of the hardened material such as the film formed using the resin composition of this embodiment can be improved, and the coefficient of thermal expansion can be reduced. In addition, the minimum melt viscosity of the resin composition can be ideally controlled. From the viewpoint of suitability for use as a bottom filler, the minimum melt viscosity of the resin composition should preferably be 200 Pa·s or more and 30,000 Pa·s or less. In particular, since the resin composition of this embodiment contains the inorganic filler (D1) as detailed later as the inorganic filler (D), the low porosity and wafer adhesion are improved.

[0094] The inorganic filler (D) is not particularly limited, and may include various known inorganic compounds, not limited to the following, but may include: natural silica, fused silica, amorphous silica, and hollow silica; aluminum compounds such as boehmite, aluminum hydroxide, alumina, and aluminum nitride; magnesium compounds such as magnesium oxide and magnesium hydroxide; calcium compounds such as calcium carbonate and calcium sulfate; molybdenum compounds such as molybdenum oxide and zinc molybdate; boron nitride; barium sulfate; talc such as natural talc and calcined talc; mica; and glasses such as short fibrous glass, spherical glass, and micronized glass (e.g., E glass, T glass, D glass). Furthermore, when it is desired to impart electrical conductivity or anisotropic conductivity to the resin composition of this embodiment, the inorganic filler (D) may also use metal particles such as gold, silver, nickel, copper, tin alloys, and palladium. Among these, considering the improvement of the flame retardancy and reduction of the coefficient of thermal expansion of the resin composition, the inorganic filler (D) preferably includes one or more of the following: silicon dioxide, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide. It is more preferable that it includes one or more of the following: silicon dioxide, alumina, and boron nitride, with silicon dioxide being even more preferred. These inorganic fillers (D) can be used alone or in appropriate mixtures of two or more.

[0095] In the inorganic filler (D), the surface of the inorganic compound in the above-mentioned specific example does not originally contain functional groups such as (meth)acrylate, vinyl, styrene, or phenyl. On the other hand, the inorganic filler (D) in this embodiment includes an inorganic filler (D1) having one or more functional groups (d) selected from the group consisting of (meth)acrylate, vinyl, styrene, and phenyl. In addition, in this embodiment, "phenyl" ("-C6H5") means that it is directly bonded to silicon or carbon atoms, and is distinguished from, for example, phenyl (aminophenyl) directly bonded to nitrogen atoms. The functional groups (d) in such inorganic filler (D1) have high reactivity with compound (B), so it is believed that a strong chemical bond will be formed between compound (B) and inorganic filler (D1) due to the heat during semiconductor wafer mounting and post-curing. It is believed that the results can suppress voids that may occur after semiconductor wafer mounting and post-curing, and can ideally suppress the peeling of hardened material from the wafer and substrate even after semiconductor wafer mounting and post-curing.

[0096] In this embodiment, the functional group (d) is not particularly limited as long as it includes at least one group selected from the group consisting of (meth)acrylic acid, vinyl, styrene, and phenyl. Considering the low porosity and wafer adhesion, it is preferable to include silicon atoms, and it is ideal if the silicon atoms are directly bonded to one or more groups selected from the group consisting of (meth)acrylic acid, vinyl, styrene, and phenyl. Such a functional group (d) directly bonded to one or more groups selected from the group consisting of (meth)acrylic acid, vinyl, styrene, and phenyl is preferably a group selected from the group consisting of (meth)acrylic alkylsilyl, vinylsilyl, styrenesilyl, and phenylsilyl, and more preferably a group selected from the group consisting of (meth)acrylic alkylsilyl and vinylsilyl. The number of carbon atoms in the alkyl moiety of (meth)acryloxyalkylsilyl is preferably 1 to 6, and 1 to 3 is more preferred.

[0097] In this embodiment, the inorganic filler (D1), considering low porosity and wafer adhesion, preferably comprises a reaction product of a compound (d1) having a functional group (d) and an inorganic filler (d2) not having that functional group (d). There are no particular limitations on whether the compound (d1) can introduce a predetermined functional group onto the surface of the inorganic filler (d2). Examples include silane coupling agents containing at least one selected from the group consisting of (meth)acrylate, vinyl, styrene, and phenyl. Such silane coupling agents can appropriately be those commonly used in the surface treatment of inorganic materials. Specific examples are not limited to the following, but may include: vinyl silane coupling agents such as vinyltrimethoxysilane and γ-(meth)acryloxypropyltrimethoxysilane (silane compounds having (meth)acrylate and / or vinyl groups); phenyl silane coupling agents such as trimethoxyphenylsilane (silane compounds having phenyl groups); styrene silane coupling agents such as styrenetrimethoxysilane (silane compounds having styrene groups), etc. These silane coupling agents can be used alone or in appropriate mixtures of two or more. Of the above, considering the low porosity and wafer adhesion, compound (d1) preferably includes one or more of the group consisting of vinyl silane coupling agents (silane compounds having (meth)acrylate and / or vinyl groups) and styrene silane coupling agents (silane compounds having styrene groups), preferably including vinyl silane coupling agents, even more preferably including one or more of the group consisting of vinyltrialkoxysilane and γ-(meth)acryloxypropyltrialkoxysilane, and even more preferably including one or more of the group consisting of vinyltrimethoxysilane and γ-(meth)acryloxypropyltrimethoxysilane. There are no particular limitations on the inorganic filler (d2). As long as it can contain inorganic compounds that serve as inorganic filler (D), the aforementioned specific examples can be used. Considering low porosity and wafer adhesion, it is preferable to include one or more compounds selected from the group consisting of silicon dioxide, aluminum hydroxide, alumina, borosilicate, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide, with silicon dioxide being more preferred. There are no particular limitations on the preparation method of the above reaction product. Various known methods can be appropriately employed for the treatment using a silane coupling agent. For example, when the inorganic filler (d2) is silicon dioxide, the above treatment can be carried out in the gas phase or in the liquid phase. Furthermore, there are no particular limitations on the content of functional groups (d) in the inorganic filler (D1). When the inorganic filler (d2) is silicon dioxide, the content of functional groups (d) can be 1 to 10 parts by mass relative to 100 parts by mass of silicon dioxide.

[0098] In addition, when the inorganic filler (d2) is silicon dioxide, specific examples of the above reaction products are not limited to the following, but can be listed as follows: 0.3μmSV-EM1 (trade name) surface-treated with vinyltrimethoxysilane manufactured by Admatechs, SC1050-MLQ (trade name) surface-treated with vinyltrimethoxysilane, SC2050-MNU (trade name) surface-treated with vinyltrimethoxysilane, YA050C-MJE (trade name) surface-treated with 3-methylacryloxypropyltrimethoxysilane, Y50SV-AM1 (trade name) surface-treated with vinyltrimethoxysilane, Y50SP-AM1 (trade name) surface-treated with phenyltrimethoxysilane, etc. Considering the low porosity and wafer adhesion of the above, the commercially available products of the above reaction should preferably include one or more of the following products selected from the group consisting of YA050C-MJE (trade name), Y50SV-AM1 (trade name), and Y50SP-AM1 (trade name), and it is more preferable to include one or more of the following products selected from the group consisting of YA050C-MJE (trade name) and Y50SV-AM1 (trade name).

[0099] The average particle size of the inorganic filler (D) is not particularly limited. Considering the use of the resin composition of this embodiment as the bottom filler, it is preferable to have a particle size of 3 μm or less, preferably 1 μm or less, and also 0.1 μm or less, in order to achieve narrower pitch and narrower gap between the electrodes arranged on the wafer. The lower limit of its average particle size is not particularly limited, for example, it is 10 nm. Furthermore, in this embodiment, the "average particle size" of the inorganic filler (D) refers to the median particle size of the inorganic filler (D). Here, the median particle size means that when the particle size distribution of the powder is divided into two groups based on a certain particle size, the volume of the particles on the larger particle size side and the volume of the particles on the smaller particle size side each account for 50% of the total powder. The average particle size (median particle size) of the inorganic filler (D) is measured using a wet laser diffraction-scattering method.

[0100] In the resin composition of this embodiment, there is no particular limitation on the content of inorganic filler (D). Considering the reliability of insulation and ensuring sufficient flux activity during installation, it is preferable to be 20-500 parts by mass, more preferably 50-400 parts by mass, and even more preferably 70-300 parts by mass, relative to 100 parts by mass of the total aminotriphenolic varnish resin (A) and compound (B). The upper limit of the content of inorganic filler (D) can also be 250 parts by mass. Furthermore, considering low porosity and wafer adhesion, the content of inorganic filler (D1) is preferably 20-500 parts by mass, more preferably 50-400 parts by mass, and even more preferably 70-300 parts by mass, relative to 100 parts by mass of the total aminotriphenolic varnish resin (A) and compound (B). The upper limit of the content of inorganic filler (D1) can also be 250 parts by mass.

[0101] [Curing Catalyst (E)] The resin composition of this embodiment preferably contains a curing catalyst (E). When the resin composition contains a curing catalyst (E), the reaction rate between the resin (A) and the compound (B) and the polymerization rate of the compound (B) can be more ideally controlled, and a resin composition with appropriate formability can be obtained. There are no particular restrictions on whether the curing catalyst (E) is a compound that can promote the reaction between the resin (A) and the compound (B) and the polymerization reaction of the compound (B). One type of curing catalyst (E) can be used alone or two or more types can be used in combination.

[0102] The curing catalyst (E) in this embodiment is not particularly limited, and examples include: organic peroxides, imidazole compounds, azo compounds, and tertiary amines such as triethylamine and tributylamine and their derivatives. Among these, considering the viewpoint of obtaining good reaction rate and polymerization rate, and good curing rate, the curing catalyst (E) preferably includes one or more compounds selected from the group consisting of organic peroxides and imidazole compounds, and it is more preferable to include both organic peroxides and imidazole compounds.

[0103] In this embodiment, there is no particular limitation on the content of the curing catalyst (E). Considering the viewpoint of obtaining a good curing speed, it is preferable to be 0.05 to 10 parts by mass relative to the total of 100 parts by mass of aminotriphenolic varnish resin (A) and compound (B), and more preferably 0.05 to 8 parts by mass.

[0104] (Organic peroxide) In this embodiment, the organic peroxide is not particularly limited to a compound that releases active substances (free radicals) upon heating, which can promote the reaction between resin (A) and compound (B) and the polymerization reaction of compound (B). Known organic peroxides can be used. One type of organic peroxide can be used alone or two or more types can be used in combination.

[0105] In this embodiment, there is no particular limitation on the 10-hour half-life temperature of the organic peroxide, but it is preferable to be above 100°C, and from a manufacturability point of view, above 110°C is even better. In order to achieve high temperature in the solvent removal step during manufacturing, the organic peroxide should preferably meet the aforementioned range of 10-hour half-life temperature.

[0106] Organic peroxides include, for example: dicumyl peroxide, di(2-tert-butylperoxyisopropyl)benzene, 1,1,3,3-tetramethylbutyl hydroperoxide, 2,5-dimethyl-2,5-bis(tert-butylperoxy)hexyne-3, benzoyl peroxide, di(tert-butyl)peroxide, methyl ethyl ketone peroxide, and cyclohexanone peroxide, etc.; ketal peroxides such as 1,1-di(tert-butylperoxy)cyclohexane and 2,2-di(4,4-di(tert-butylperoxy)cyclohexyl)propane; hydrogen peroxides such as tert-butyl hydroperoxide, menthane hydroperoxide, dicumyl peroxide, isocumyl peroxide, and tert-butyl hydroperoxide, etc.; di(2-tert-butylperoxy)isopropyl)cyclohexane peroxide, etc. Dialkyl peroxides, including propylbenzene, 2,5-dimethyl-2,5-di(tert-butyl peroxide)hexane, tert-butyl peroxide, di(tert-hexyl)peroxide, 2,5-dimethyl-2,5-di(tert-butyl peroxide)hexyn-3, α,α'-di(tert-butyl peroxide)diisopropylbenzene, and di(tert-butyl)peroxide; diacyl peroxides, including benzoyl peroxide and di(4-methylbenzoyl)peroxide; di-n-propyl peroxide and diisopropyl peroxide; and peroxide esters, including 2,5-dimethyl-2,5-di(benzoyl peroxide)hexane, tert-hexyl peroxide, tert-butyl peroxide, and tert-butyl peroxide-2-ethylhexanoate. Considering the possibility of obtaining better reaction and hardening rates, it is advisable to select one or more from the group consisting of dicumyl peroxide, di(2-tert-butylperoxide), 1,1,3,3-tetramethylbutylperoxide, 2,5-dimethyl-2,5-bis(tert-butylperoxide)hexyn-3, α,α'-di(tert-butylperoxide)dicumyl peroxide, and tert-butylperoxide.

[0107] In the resin composition of this embodiment, there is no particular limitation on the content of organic peroxide. Considering the view that a better reaction rate and curing rate can be obtained, it is preferable to contain 0.05 to 10 parts by mass relative to a total of 100 parts by mass of aminotriphenolic varnish resin (A) and compound (B), and it is more preferable to contain 0.05 to 8 parts by mass.

[0108] (Imidazole compound) There are no particular restrictions on the imidazole compound as long as it can promote the reaction between resin (A) and compound (B) and the polymerization reaction of compound (B). Known imidazole compounds can be used. One imidazole compound or two or more compounds can be used in combination.

[0109] Imidazole compounds include, for example, 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 2,4,5-triphenylimidazole, etc. Among them, 2-ethyl-4-methylimidazole is preferred from the perspective of easier adjustment of reaction rate and hardening rate.

[0110] In the resin composition of this embodiment, there is no particular limitation on the content of imidazole compound. Considering that it is easier to adjust the reaction rate and curing rate, it is preferable to be 0.05 parts to 10 parts by mass, and more preferably 0.05 parts to 8 parts by mass, relative to a total of 100 parts by mass of aminotriphenolic varnish resin (A) and compound (B).

[0111] (Azo compound) There are no particular restrictions on the azo compound used, as long as it can promote the reaction between resin (A) and compound (B) and the polymerization reaction of compound (B). Known azo compounds can be used. One azo compound or two or more can be used in combination. Examples of azo compounds include: 2,2'-azobisbutyronitrile, 2,2'-azobis(2,4-dimethylpentanonitrile), and 2,2'-azobis(4-methoxy-2,4-dimethylpentanonitrile), etc.

[0112] In the resin composition of this embodiment, there is no particular limitation on the content of azo compound. Considering the view that a better reaction rate and curing rate can be obtained, it is preferable to contain 0.05 to 10 parts by mass relative to the total 100 parts by mass of aminotriphenolic varnish resin (A) and compound (B), and it is more preferable to contain 0.05 to 8 parts by mass.

[0113] [Other Components] In addition to containing aminotriphenolic varnish resin (A), compound (B), and inorganic filler (D), the resin composition of this embodiment may also contain the above-mentioned fluxing agent (C) and hardening catalyst (E), as well as one or more other components.

[0114] Other components are not particularly limited, but examples include: flexibility-imparting components. There are no particular limitations on flexibility-imparting components that impart flexibility to layers containing resin compositions. Examples of such components include, in addition to, aminotriphenyl phenolic resin (A), compounds (B), fluxing agents (C), inorganic fillers (D), and curing catalysts (E), polyimides, polyamide-imides, polystyrene, polyolefins, styrene-butadiene rubber (SBR), isoprene rubber (IR), butadiene rubber (BR), (meth)acrylonitrile butadiene rubber (NBR), polyurethane, polypropylene, (meth)acrylic acid oligomers, (meth)acrylic acid polymers, and thermoplastic polymers such as polysiloxane. These flexibility-imparting components can be used alone or in appropriate mixtures of two or more.

[0115] The resin composition of this embodiment may also contain other components, that is, it may contain a silane coupling agent, which is different from the inorganic filler (D1). Examples of such silane coupling agents used in the preparation of the inorganic filler (D1) have been cited. There is no particular limitation on the content of the silane coupling agent, which may be set to about 0.05 to 20 parts by mass relative to 100 parts by mass of the total aminotriphenolic varnish resin (A) and compound (B).

[0116] In the resin composition of this embodiment, a wetting and dispersing agent may also be included as another component to further improve the manufacturability of the laminate and the dispersibility of the filler. There are no particular limitations on the wetting and dispersing agent if it is a commonly used wetting and dispersing agent such as a coating. Examples include: BYK Corporation's DISPERBYK-110 (trade name), DISPERBYK-111 (trade name), DISPERBYK-180 (trade name), DISPERBYK-161 (trade name), BYK-W996 (trade name), BYK-W9010 (trade name), and BYK-W903 (trade name). These wetting and dispersing agents can be used alone or in appropriate mixtures of two or more. There are no particular restrictions on the content of wetting and dispersing agents when using them. However, considering the viewpoint of further improving the manufacturability of the laminate, it is advisable to set it to 0.1 to 5 parts by weight, and preferably 0.5 to 3 parts by weight, relative to 100 parts by weight of inorganic filler (D). In addition, when using two or more wetting and dispersing agents in combination, their total amount should conform to the aforementioned ratio.

[0117] The resin composition of this embodiment may also contain other thermosetting resins or compounds (hereinafter also referred to as "other thermosetting resins") that are different from the aminotrichlorophenolic varnish resin (A) and compound (B) as other components. Examples of other thermosetting resins include: cyanate compounds, benzo[a]pyrene compounds, aromatic primary amine compounds, epoxy compounds, phenolic compounds, modified polyphenylene ether compounds, alkenyl-substituted nadic amide compounds, oxetane resins, and compounds having polymerizable unsaturated groups. These other thermosetting resins may be used alone or appropriately mixed in combination of two or more. In this embodiment, considering low porosity and wafer adhesion, one or more compounds (F) selected from the group consisting of cyanate compounds, benzo[a]pyrene compounds, and aromatic primary amine compounds may be included. The content of compound (F) relative to the total of 100 parts by mass of aminotriphenolic varnish resin (A), compound (B) and compound (F) can be 1 to 50 parts by mass, 3 to 35 parts by mass, or 5 to 30 parts by mass.

[0118] The resin composition of this embodiment may contain various additives as other components for various purposes, without impairing the desired properties. Examples of additives include: tackifiers, lubricants, defoamers, leveling agents, gloss agents, flame retardants, and ion trapping agents. These additives may be used alone or in appropriate mixtures of two or more. The content of these additives in the resin composition of this embodiment is not particularly limited, and is generally 0.01 to 10 parts by mass relative to 100 parts by mass of the total aminotriphenolic varnish resin (A) and compound (B).

[0119] [Ideal Uses of the Resin Composition] The resin composition of this embodiment exhibits excellent low porosity and wafer adhesion. When the resin composition of this embodiment is used as an underfill material in the form of a laminate, it is particularly suitable as a pre-coated underfill material, exhibiting excellent low porosity and wafer adhesion, as well as excellent bonding and insulation reliability. Due to its various excellent characteristics, the resin composition of this embodiment is more useful as an underfill material, and even more useful as a pre-coated underfill material. Furthermore, the laminate system will be described later.

[0120] The resin composition of this embodiment is ideal as an underfill material, and even more ideal for use as a pre-coated underfill material. Therefore, the sheet and the layer containing the resin composition (also referred to as the "resin composition layer") obtained by using the resin composition are preferably in a semi-cured state (B-level). Furthermore, detailed descriptions of the sheet and the resin composition layer are provided below. By being in a semi-cured state, the sheet and the resin composition layer can achieve further superior low porosity and wafer adhesion. In this embodiment, the semi-cured state (B-level) refers to a state where the components contained in the sheet or resin composition layer have not yet actively begun to react (cured), but the sheet or resin composition layer is in a dry state, that is, a state where the solvent is evaporated to a non-adhesive degree by heating. It also includes a state where no heating is required and the material is not yet cured, but only the solvent is evaporated. In this embodiment, the minimum melt viscosity of the semi-cured state (B-level) is typically 50,000 Pa·s or less. The lower limit of the minimum melt viscosity is, for example, 10 Pa·s or more. Considering suitability for use as a bottom filler, the minimum melt viscosity in the semi-cured state (Stage B) should ideally be 200 Pa·s or higher and 30,000 Pa·s or lower. Furthermore, in this embodiment, the minimum melt viscosity is determined using the following method: A resin composition is laminated onto a support substrate using a laminator to obtain a resin sheet with a thickness of approximately 0.4 to 0.6 mm. This resin sheet is used as a sample, and its melt viscosity is measured using a rheometer (HAAKE MARS60, Thermo Fisher Scientific). The measurement is performed using a disposable parallel plate with an 8 mm diameter, within a temperature range of 40°C to 300°C, at a heating rate of 10°C / min, a frequency of 10.0 rad / s, and a strain of 0.1%. The minimum melt viscosity refers to the viscosity at its lowest value within the temperature range of 40°C to 300°C.

[0121] [Manufacturing Method of Resin Composition] The manufacturing method of the resin composition in this embodiment is not particularly limited as long as the aforementioned composition is obtainable. The resin composition can be prepared, for example, by appropriately mixing an aminotriphenolic varnish resin (A), a compound (B), an inorganic filler (D), and, as needed, a fluxing agent (C), a curing catalyst (E), and other components. It can also be prepared as a varnish in which these components are dissolved or dispersed in an organic solvent, as needed. The varnish is ideally suited for use in the fabrication of laminates. Specific manufacturing methods can be found in the laminate manufacturing methods and examples described later.

[0122] There are no particular limitations on the organic solvent, provided that it can ideally dissolve or disperse each component in the resin composition of this embodiment without impairing the effect of the resin composition of this embodiment. Examples of organic solvents include: alcohols such as methanol, ethanol, and propanol; ketones such as acetone, methyl ethyl ketone (hereinafter sometimes abbreviated as "MEK"), and methyl isobutyl ketone; amides such as dimethylacetamide and dimethylformamide; and aromatic hydrocarbons such as toluene and xylene. These organic solvents can be used alone or in appropriate mixtures of two or more.

[0123] [Resin Sheet] The resin sheet contains the resin composition of this embodiment. Specifically, the resin sheet has a support substrate and a resin layer disposed on one or both sides of the support substrate, and the resin layer contains the resin composition of this embodiment. This resin sheet is also called a laminated resin sheet. The resin layer of the resin sheet preferably has an uncured state (A-stage) resin composition coated onto the support substrate to make it semi-cured (B-stage). The manufacturing method of such a resin sheet is preferably a method for manufacturing a composite of a B-stage resin layer and a support substrate. Specifically, methods such as making a varnish from the uncured state (A-stage) resin composition, applying the varnish to a support substrate such as a copper foil using a known method such as a coating rod, and then heating it in a dryer at 100~200°C for 1~60 minutes to make it semi-cured (B-stage) and manufacturing a resin sheet can be cited. In addition, in this embodiment, the uncured state (A-stage) refers to a state in which the resin composition is almost uncured and has not gelled. The resin composition applied to the support substrate of the resin sheet is, for example, a mixture of the components of the resin composition (which may or may not contain solvent), or a varnish in which the mixture is dissolved or dispersed in a solvent, and is in an uncured state (A-stage).

[0124] There are no particular limitations on the supporting substrate, and examples include: polyethylene film, polypropylene film, polycarbonate film, polyethylene terephthalate film, ethylene tetrafluoroethylene copolymer film, and polyimide film and other organic films; release films with release agents coated on the surface of these films; conductor foils such as copper foil and aluminum foil; and plate-shaped materials such as glass plates, SUS plates, and FRP.

[0125] There are no particular limitations on the coating method. Examples include: applying a solution of resin composition dissolved in a solvent onto a support substrate using a coating rod, a die coater, a doctor blade, or a Baker applicator.

[0126] Among resin sheets, a single-layer resin sheet can be obtained by forming a resin composition into a sheet shape. The manufacturing method of a single-layer resin sheet can be carried out in accordance with conventional methods and is not particularly limited. For example, in the manufacturing method of a resin sheet, a solution of resin composition dissolved in a solvent is coated onto a support substrate and dried, and then the support substrate is peeled off from the resin sheet or etched. Alternatively, a single-layer resin sheet can be obtained by forming a sheet shape by supplying a solution of resin composition dissolved in a solvent into a mold having a sheet-shaped mold cavity and drying it, without using a support substrate.

[0127] When making resin sheets or single-layer resin sheets, there are no particular restrictions on the drying conditions when removing the solvent. If the temperature is low, the solvent is likely to remain in the resin composition. If the temperature is high, the resin composition will harden. Therefore, it is advisable to dry at a temperature of 20~170°C for 1~90 minutes.

[0128] The thickness of the resin layer of the resin sheet or single-layer resin sheet can be adjusted by the concentration of the resin composition solution and the coating thickness, and there is no particular limitation. Generally speaking, if the coating thickness is too thick, the solvent is more likely to remain during drying, so it should be 0.1~500μm.

[0129] The resin sheet or single-layer resin sheet can be used, for example, as a material for forming wiring circuits in a substrate for mounting semiconductor wafers and semiconductor chips.

[0130] [Laminated Body] By coating the resin composition of this embodiment onto a support substrate, a laminate containing a resin composition layer with low porosity and excellent wafer adhesion can be obtained. That is, the laminate of this embodiment includes a support substrate and a resin composition layer containing the resin composition of this embodiment laminated on the support substrate. Such a laminate can be obtained by forming the resin composition of this embodiment in the form of a layer onto the support substrate. There are no particular limitations on the support substrate, and a polymer film can be used. Examples of materials for polymer films include: vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyethylene, polypropylene, polybutene, polybutadiene, ethylene-propylene copolymer, polymethylpentene, ethylene-vinyl acetate copolymer, and ethylene-vinyl alcohol copolymer; polyester resins such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyurethane resins; polyimide resins; and polyamide resins. Supporting substrates include: films containing these resins, and release films with a release agent coated on their surface. Among them, films containing one or more resins selected from the group consisting of polyester resins, polyimide resins, and polyamide resins, and release films having a release agent coated on the surface of these films are preferred. Films containing polyethylene terephthalate, which is a type of polyester resin, or release films having a release agent coated on the surface of films containing polyethylene terephthalate are even more preferred.

[0131] There is no particular limitation on the thickness of the support substrate. However, considering the ease of manufacturing the laminate, such as better stability of the coating thickness when coating the resin composition onto the support substrate, and better transportability of the laminate, a thickness of 10 to 100 μm is preferable. The lower limit of the support substrate thickness, considering the need to better ensure yield when manufacturing the laminate, is preferably 10 μm or more, even more preferably 20 μm or more, and even more preferably 25 μm or more. The upper limit of the support substrate thickness, considering that the support substrate will not ultimately exist as a component of the semiconductor device but will be peeled off during the process, and considering the manufacturing cost of the laminate, is preferably 80 μm or less, even more preferably 50 μm or less.

[0132] There are no particular limitations on the method of manufacturing the laminate of this embodiment by forming a resin composition layer on a support substrate, i.e., forming a resin composition layer. Examples of such manufacturing methods include: applying a varnish containing a dissolved or dispersed resin composition of this embodiment in an organic solvent to the surface of a support substrate, heating and / or drying under reduced pressure to remove the solvent, thereby curing the resin composition of this embodiment and forming a resin composition layer. There are no particular limitations on the drying conditions; the ratio of organic solvent to the resin composition layer is typically 10 parts by mass or less, and preferably 5 parts by mass or less, relative to the total amount (100 parts by mass) of the resin composition layer. The drying conditions vary depending on the type and amount of organic solvent in the varnish. For example, when a varnish containing 10 to 200 parts by mass of methyl ethyl ketone is produced relative to 100 parts by mass of the total amount of aminotriphenolic varnish resin (A) and compound (B), drying at 90 to 160°C for 2 to 15 minutes under 1 atmosphere pressure is a general standard. The thickness of the resin composition layer in the laminate of this embodiment is not particularly limited. However, considering the viewpoint that the resin composition layer can better remove lower molecular weight volatile components during drying, and considering the viewpoint that it can more effectively and reliably perform its function as a laminate, a range of 5 to 500 μm is ideal, and a range of 10 to 100 μm is more preferred. After manufacturing the laminate of this embodiment, a protective film may also be laminated on the side opposite to the side of the laminate that has the supporting substrate for preservation purposes.

[0133] [Semiconductor wafer with resin composition layer and semiconductor wafer mounting substrate with resin composition layer] The semiconductor wafer with resin composition layer of this embodiment includes a semiconductor wafer and a layer (resin composition layer) stacked on the semiconductor wafer and formed using the resin composition of this embodiment. The semiconductor wafer mounting substrate with resin composition layer of this embodiment includes a semiconductor wafer mounting substrate and a layer (resin composition layer) stacked on the semiconductor wafer mounting substrate and formed using the resin composition of this embodiment. Furthermore, the semiconductor wafer with resin composition layer of this embodiment may also be specifically designed to include a semiconductor wafer and a layer (resin composition layer) containing the resin composition of this embodiment stacked on the semiconductor wafer. The semiconductor wafer mounting substrate with resin composition layer of this embodiment may also be specifically designed to include a semiconductor wafer mounting substrate and a layer (resin composition layer) containing the resin composition of this embodiment stacked on the semiconductor wafer mounting substrate.

[0134] There are no particular limitations on the method for fabricating the semiconductor wafer with a resin composition layer according to this embodiment. For example, the semiconductor wafer can be bonded to the resin composition layer of the stacked body of this embodiment on the side where electrodes are formed, i.e., the side that is bonded to the substrate, and the support substrate in the stacked body can be peeled off. Then, it can be slicing using a slicing saw or the like to obtain the semiconductor wafer with the resin composition layer. Furthermore, there are no particular limitations on the method for fabricating the semiconductor wafer mounting substrate with a resin composition layer according to this embodiment. For example, it can be obtained by bonding the wafer mounting side of the semiconductor wafer mounting substrate to the resin composition layer of the stacked body of this embodiment and peeling off the support substrate in the stacked body.

[0135] There are no particular limitations on the method of bonding the laminate of this embodiment to a semiconductor wafer or a semiconductor wafer mounting substrate, and a vacuum pressure laminator can be ideally used. In this case, it is preferable to use an elastomer such as rubber to press and bond the laminate of this embodiment. There are no particular limitations on the lamination conditions if they are conditions commonly used by those skilled in the art to which this invention pertains, such as a temperature of 50-140°C, a contact pressure in the range of 1-11 kgf / cm², and an ambient pressure reduction of less than 20 hPa. After the lamination step, the bonded laminate can also be smoothed by hot pressing with a metal plate. The lamination step and the smoothing step can be performed continuously using a commercially available vacuum pressure laminator. In any case, the support substrate of the laminate bonded to the semiconductor wafer or semiconductor wafer mounting substrate is removed before the flip-chip mounting of the wafer.

[0136] [Semiconductor Device] The semiconductor device of this embodiment includes a semiconductor wafer having a resin composition layer and / or a semiconductor wafer mounting substrate having a resin composition layer. There are no particular limitations on the method of manufacturing the semiconductor device of this embodiment; for example, the method of mounting the semiconductor wafer having a resin composition layer on the semiconductor wafer mounting substrate. Alternatively, the semiconductor wafer can be mounted on the semiconductor wafer mounting substrate having a resin composition layer. The method of mounting the semiconductor wafer having a resin composition layer on the semiconductor wafer mounting substrate, and the method of mounting the semiconductor wafer on the semiconductor wafer mounting substrate having a resin composition layer, can ideally use a flip-chip bonder corresponding to the thermoforming process. Furthermore, this embodiment simply describes the case of flip-chip mounting of the semiconductor wafer on the semiconductor wafer mounting substrate; however, it is also possible to flip-chip mount the semiconductor wafer on an object other than the semiconductor wafer mounting substrate. For example, the resin composition of this embodiment can also be used at the junction between a semiconductor wafer and a semiconductor chip when a semiconductor chip is mounted on a semiconductor wafer, or at the junction between individual semiconductor chips in a wafer stack where semiconductor chips are interconnected via TSV (Through Silicon Via), etc., and the effects of this embodiment can be obtained in either case. [Example]

[0137] Hereinafter, this embodiment will be described in more detail using examples and comparative examples. This embodiment is not limited to any of the following examples. The parts by mass are based on a total of 100 parts by mass of the total amount of aminotriphenolic varnish resin (A) and compound (B).

[0138] [Preparation of Resin Composition and Laminate] (Example 1) 45 parts by mass (equivalent to 27 parts by mass) of PHENOLITE (registered trademark) LA-1356 (trade name, DIC (stock), weight average molecular weight: 1,500, nitrogen content: 19% by mass, hydroxyl equivalent: 146 g / eq., non-volatile component: 60% by mass) as amino-based triphenolic varnish resin (A), and 40.5 parts by mass of maleimide compound (BMI-1000P (trade name), K.I. chemical compound (stock, n3=14 (average value), weight average molecular weight: 3,700) represented by formula (3) as compound B), 22.5 parts by mass of bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane (BMI-70 (trade name), K.I. Chemical Co., Ltd., weight average molecular weight 550) as compound 2 (B); 14.3 parts by mass of maleimide compound represented by formula (6) (MIR-3000-70MT (trade name), Nippon Kayaku Co., Ltd., non-volatile component 70% by mass, weight average molecular weight: 1050) as compound 3 (B) (equivalent to 10 parts by mass based on non-volatile component); 25 parts by mass of hydrogenated rosin ester (PINECRYSTAL (registered trademark) KR-140 (trade name), Arakawa Chemical Industry Co., Ltd., acid dissociation constant pKa: 4.7, weight average molecular weight: 521) as fluxing agent (C); As an inorganic filler (D), 400 parts by mass of slurry silica (YA050C-MJE (trade name), Admatechs (stock), methacrylate silane surface-treated silica, 50% by mass of solids, dispersion medium: MEK, average particle size: 50nm) (equivalent to 200 parts by mass of non-volatile components); as the first curing catalyst (E), 2 parts by mass of 2-ethyl-4-methylimidazolium (2E4MZ, Shikoku Chemical Industry (stock), 50% by mass of non-volatile components) (equivalent to 1 part by mass of non-volatile components); and as the second curing catalyst (E), α,α'-di(tributylperoxide)diisopropylbenzene (PERBUTYL) (equivalent to organic peroxide). (Registered Trademark) P, Nippon Yushi (Stock), 10-hour half-life temperature: 119.20℃) 4 parts by mass were mixed and stirred in a hot water bath at 60℃ using a high-speed stirrer for 40 minutes. Then MEK was added to obtain a varnish with a solid content of 60% by mass. The varnish was coated on a polyethylene terephthalate film (TR1-38 (trade name, support substrate), UNITIKA (Stock)) with a thickness of 38μm and a release agent coating on the surface. It was then heated and dried at 100℃ for 5 minutes under 1 atm to obtain a laminate with a resin composition layer thickness of 30μm.In addition, LA-1356 (trade name, manufactured by DIC), which is an aminotriphenolic varnish resin (A), is a mixture of compounds represented by formula (1) (a mixture of compounds represented by formula (1), and the mixture contains a group of compounds in which R1 is independently a hydrogen atom or a methyl group, l, m, n are independently integers from 1 to 6, and (l+m+n) is an integer from 3 to 18) and a mixture of compounds represented by formula (2) (a mixture of compounds represented by formula (2), and the mixture contains a group of compounds in which R2 is independently a hydrogen atom or a methyl group, o, p, q, r, and s are independently integers from 1 to 4, and (o+p+q+r+s) is an integer from 5 to 20), and the mass ratio of the compound represented by formula (1) (mixture) to the compound represented by formula (2) (formula (1): formula (2)) in the mixture is 65 (parts by mass): 35 (parts by mass). Furthermore, YA050C-MJE is the reaction product of silicon dioxide and 3-methylacryloxypropyltrimethoxysilane. That is, YA050C-MJE is evaluated as having functional groups on the surface of silicon dioxide that have a structure obtained by reacting at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (13).

[0139] [Chemistry 19]

[0140] (Example 2) YA050C-MJE, which served as the inorganic filler (D) in Example 1, was replaced with 400 parts by mass of slurry silica (Y50SV-AM1 (trade name), Admatechs (stock), vinyl silane surface-treated silica, solid content 50% by mass, dispersion medium: MEK, average particle size: 50 nm) (equivalent to 200 parts by mass of non-volatile components). Otherwise, the process was the same as in Example 1, and a varnish was prepared. Using this varnish, the process was the same as in Example 1, and a laminate with a resin composition layer thickness of 30 μm was obtained. Y50SV-AM1 is a reaction product of silica and vinyltrimethoxysilane. That is, YA050C-MJE is evaluated as having a functional group that has a structure obtained by reacting at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (14).

[0141] [Chemical 20]

[0142] (Example 3) YA050C-MJE, which served as the inorganic filler (D) in Example 1, was replaced with 400 parts by mass of slurry silica (Y50SP-AM1 (trade name), Admatechs (stock), phenylsilane-treated silica, 50% by mass of solids, dispersion medium: MEK, average particle size: 50 nm) (equivalent to 200 parts by mass of non-volatile components). Otherwise, the process was the same as in Example 1, and a varnish was prepared. Using this varnish, the process was the same as in Example 1, and a laminate with a resin composition layer thickness of 30 μm was obtained. Y50SP-AM1 is a reaction product of silica and phenyltrimethoxysilane. That is, YA050C-MJE is evaluated as having a functional group that has a structure obtained by reacting at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (15).

[0143] [Chemistry 21]

[0144] (Example 4) The amount of YA050C-MJE used in Example 1 was changed to 200 parts by mass (equivalent to 100 parts by mass in terms of non-volatile components), and the amounts of LA-1356, BMI-70, and MIR-3000-70MT were changed to 20 parts by mass (equivalent to non-volatile components), 27.3 parts by mass (equivalent to non-volatile components), and 12.2 parts by mass (equivalent to non-volatile components), respectively. Otherwise, the process was carried out in the same manner as in Example 1, and a varnish was obtained. Using this varnish, the process was carried out in the same manner as in Example 1, and a laminate with a resin composition layer thickness of 30 μm was obtained.

[0145] (Comparative Example 1) YA050C-MJE, which served as the inorganic filler (D) in Example 1, was replaced with 400 parts by mass of slurry silica (YA050C-MJM (trade name), Admatechs (stock), phenylaminosilane surface-treated silica, 50% by mass of solids, dispersion medium: MEK, average particle size: 50 nm) (equivalent to 200 parts by mass of non-volatile components). Otherwise, the process was the same as in Example 1, and a varnish was prepared. Using this varnish, the process was the same as in Example 1, and a laminate with a resin composition layer thickness of 30 μm was obtained. Furthermore, YA050C-MJM is a reaction product of silica and phenylaminopropyltrimethoxysilane. That is, YA050C-MJM is evaluated as having a functional group that has a structure obtained by reacting at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (16).

[0146] [Chemistry 22]

[0147] (Comparative Example 2) The amount of YA050C-MJE used in Example 1 was changed to 200 parts by mass (equivalent to 100 parts by mass in terms of non-volatile components), and LA-1356 was not used. The amounts of BMI-70 and MIR-3000-70MT were changed to 41.5 parts by mass (equivalent to non-volatile components) and 18 parts by mass (equivalent to non-volatile components), respectively. Otherwise, the process was the same as in Example 1, and a varnish was prepared. Using this varnish, the process was the same as in Example 1, and a laminate with a resin composition layer thickness of 30 μm was obtained.

[0148] (Comparative Example 3) Without using BMI-1000P from Example 1, the amounts of LA-1356, BMI-70, and MIR-3000-70MT were changed to 45 parts by weight (converted to non-volatile components), 38 parts by weight (converted to non-volatile components), and 17 parts by weight (converted to non-volatile components), respectively. Otherwise, the process was the same as in Example 1, and a varnish was obtained. Using this varnish, the process was the same as in Example 1, and a laminate with a resin composition layer thickness of 30 μm was obtained.

[0149] (Comparative Example 4) Without using BMI-70 and MIR-3000-70MT from Example 1, and changing the amounts of LA-1356 and BMI-1000P to 40 parts by weight (converted to non-volatile components) and 60 parts by weight (converted to non-volatile components), respectively, the process was the same as in Example 1 to obtain a varnish. Using this varnish, the process was the same as in Example 1 to obtain a laminate with a resin composition layer thickness of 30 μm.

[0150] [Evaluation of the Stacked Structure] The stacked structures obtained in Examples 1-4 and Comparative Examples 1-2 were evaluated as follows. The results are shown in Table 1. (1) Evaluation of the gap after semiconductor wafer mounting The obtained stacked structure was cut into 8mm × 8mm squares. The cut stacked structure was laminated to the 15μm copper circuit surface of the pad portion of the semiconductor wafer mounting substrate (WALTS-KIT CC80(W)-0105JY (trade name)) in such a way that it contacted the resin composition layer in the cut stacked structure. Thereafter, the polyethylene terephthalate film in the stacked structure was peeled off. Then, using a flip-chip bonder (LFB-2301 (trade name), Shinkawa (stock)), under conditions of 85°C platform temperature, 120°C bond head temperature, 100N load, and 1 second, the wafer with Cu pillars composed of copper and solder as electrodes is positioned in contact with the release surface of the resin composition layer and hot-pressed. Then, it is further hot-pressed under conditions of 260°C bond head temperature, 50N load, and 4 seconds to complete the mounting. The mounted sample (semiconductor wafer / resin composition layer / semiconductor wafer mounting substrate) is imaged using an ultrasonic precision flaw detection image processing device (μ-SDS (trade name), KJTD (stock)). The image data is used to confirm whether there are voids in the resin composition layer within the area of ​​the semiconductor wafer mounting portion. The evaluation is as follows: if the proportion of the area occupied by voids relative to the total area occupied by the resin composition layer within the semiconductor wafer mounting area is less than 10%, it is rated A; if it is 10% or more but less than 20%, it is rated B; if it is 20% or more but less than 30%, it is rated C; and if it is 30% or more, it is rated D. Furthermore, the smaller the proportion of the area occupied by voids, the higher the insulation reliability of the laminate is considered to be, especially if the proportion of the area occupied by voids is less than 10%, it is rated as a laminate with very high insulation reliability.

[0151] (2) Evaluation of voids after thermosetting The obtained laminate was cut into 8mm×8mm squares. The cut laminate was laminated to the 15μm copper circuit surface of the pad portion of the semiconductor wafer mounting substrate (WALTS-KIT CC80(W)-0105JY (trade name)) in such a way that it contacted the resin composition layer in the cut laminate. Thereafter, the polyethylene terephthalate film in the laminate was peeled off. Then, using a flip-chip bonder (LFB-2301 (trade name), Shinkawa Corporation), under conditions of 85°C base temperature, 120°C wire bonding head temperature, 100N load, and 1 second time, the wafer with Cu pillars composed of copper and solder as electrodes is positioned in contact with the release surface of the resin composition layer and hot-pressed. Then, it is further hot-pressed under conditions of 260°C wire bonding head temperature, 50N load, and 4 seconds to complete the mounting. After mounting, an explosion-proof dryer (ESPEC SPHH-201 (trade name)) is used to heat-treat the wafer at 180°C for 2 hours to harden it. The hardened sample (semiconductor wafer / resin composition layer / semiconductor wafer mounting substrate) is then imaged using an ultrasonic precision flaw detection image processing device (μ-SDS (trade name), KJTD Corporation) to obtain image data, and the image data is used to confirm whether there are voids in the resin composition layer within the area of ​​the semiconductor wafer mounting portion. The evaluation is as follows: if the proportion of the area occupied by voids relative to the total area occupied by the resin composition layer within the semiconductor wafer mounting area is less than 10%, it is rated A; if it is 10% or more but less than 20%, it is rated B; if it is 20% or more but less than 30%, it is rated C; and if it is 30% or more, it is rated D. Furthermore, the smaller the proportion of the area occupied by voids, the higher the insulation reliability of the laminate is considered to be, especially if the proportion of the area occupied by voids is less than 10%, it is rated as a laminate with very high insulation reliability.

[0152] (3) Evaluation of the adhesion of the thermo-cured wafer: The obtained laminate was cut into 8mm × 8mm squares. The cut laminate was laminated to the 15μm copper circuit surface of the pad portion of the semiconductor wafer mounting substrate (WALTS-KIT CC80(W)-0105JY (trade name)) in such a way that it contacted the resin composition layer in the cut laminate. Subsequently, the polyethylene terephthalate film in the laminate was peeled off. Then, using a flip-chip bonder (LFB-2301 (trade name), Shinkawa (stock)), under conditions of 85°C base temperature, 120°C wire bonding head temperature, 100N load, and 1 second time, the wafer with Cu pillars composed of copper and solder as electrodes was hot-pressed in contact with the release surface of the resin composition layer. This was followed by further hot-pressing at 260°C wire bonding head temperature, 50N load, and 4 seconds for installation. After installation, the wafer was hardened by heat treatment at 180°C for 2 hours in an explosion-proof dryer (ESPEC SPHH-201 (trade name)). The hardened sample (semiconductor wafer / resin composition layer / semiconductor wafer mounting substrate) was then cleaned using a rotary polishing apparatus (MetaServ 3000 (trade name), BUEHLER) to remove only the semiconductor wafer, resulting in a laminate (A) of the resin composition layer and the semiconductor wafer mounting substrate. The peeling status was confirmed by visually observing the surface of the resin composition layer in the laminate (A) and checking whether the wiring layer from the semiconductor wafer adhered to the surface. When the wiring layer remained completely on the resin composition layer side, it was considered that no peeling had occurred, marked as A. When a portion of the wiring layer was missing, it was considered that partial peeling had occurred, marked as B. When the semiconductor wafer detached during the semiconductor wafer removal process, it was considered that peeling had occurred, marked as C. Furthermore, when rated A, since the semiconductor wafer did not detach from the resin composition layer, the wafer adhesion was excellent, and therefore the laminate was evaluated as having very high insulation reliability. When rated B, in this evaluation of wafer adhesion, partial peeling occurred, but the semiconductor device could still operate without problems, and therefore the laminate was evaluated as having good wafer adhesion and high insulation reliability. Also, in Table 1, when the wafer adhesion could not be measured after semiconductor wafer mounting due to numerous gaps between the semiconductor wafer and the resin composition layer, and many unbonded portions, it was recorded as "E".

[0153] [Table 1] Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Gaps after semiconductor wafer mounting A A A A D C B B Thermo-cured voids A A A A D C B B Adhesion of thermo-cured wafers A A B A E C C C

[0154] This application is based on Japanese Patent Application No. 2021-169227, filed on October 15, 2021, and Japanese Patent Application No. 2022-026578, filed on February 24, 2022, the contents of which are incorporated herein by reference. [Industrial Applicability]

[0155] The resin composition of this embodiment has excellent low porosity and wafer adhesion, and therefore can be ideally used as a material for stacked bodies, semiconductor wafers having resin composition layers, semiconductor wafer mounting substrates having resin composition layers, and semiconductor devices. The resin composition is ideal as an underfill material, and even more ideal as a pre-coated underfill material.

Claims

1. A resin composition comprising: an aminotriphenyl phenolic varnish resin (A), a compound (B) selected from the group consisting of maleimide compounds (BA) and limonene imide compounds (BB), and an inorganic filler (D); the inorganic filler (D) comprising an inorganic filler (D1) having a functional group (d) selected from the group consisting of (meth)acrylate, vinyl, styrene, and phenyl groups; the compound (B) comprising compound (B1) and compound (B2); the compound (B1) being a compound (BA-1) selected from the group consisting of maleimide compounds (BA-1) with a weight average molecular weight of 3,000 or more and 9,500 or less, and limonene imide compounds (BB-1) with a weight average molecular weight of 3,000 or more and 9,500 or less. The compound (B2) is selected from one or more of the following groups: maleic anhydride compounds (BA-2) with a weight average molecular weight of 300 or more but less than 3,000 and citronellal anhydride compounds (BB-2) with a weight average molecular weight of 300 or more but less than 3,000. The weight average molecular weight of each compound is a value converted to standard polystyrene by gel permeation chromatography.

2. The resin composition as claimed in claim 1, wherein, The functional group (d) also contains silicon atoms.

3. The resin composition as claimed in claim 1 or 2, wherein, The inorganic filler (D1) comprises a reaction product of a compound (d1) having the functional group (d) and an inorganic filler (d2) not having the functional group (d).

4. The resin composition as claimed in claim 3, wherein, The compound (d1) having a functional group (d) comprises one or more silane compounds selected from the group consisting of silane compounds having (meth)acrylic acid groups and / or vinyl groups and silane compounds having styrene groups.

5. The resin composition as claimed in claim 3, wherein, The inorganic filler (d2) comprises one or more of the following: silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide.

6. The resin composition as claimed in claim 3, wherein, The compound (d1) having a functional group (d) comprises one or more silane compounds selected from the group consisting of silane compounds having (meth)acrylic acid groups and / or vinyl groups and silane compounds having styrene groups, and the inorganic filler (d2) comprises one or more silane compounds selected from the group consisting of silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide.

7. The resin composition as claimed in claim 1 or 2, wherein, The inorganic filler (D) has an average particle size of less than 3 μm.

8. The resin composition as claimed in claim 1 or 2, wherein, The content of the inorganic filler (D) is 20 to 500 parts by mass relative to the total of 100 parts by mass of the aminotriphenolic varnish resin (A) and the compound (B).

9. The resin composition as claimed in claim 1, wherein, The aminotriphenylphenolic varnish resin (A) comprises one or more compounds selected from the group consisting of compounds represented by formula (1) and compounds represented by formula (2); in formula (1), R1 independently represents a hydrogen atom, methyl, or ethyl, l, m, and n independently represent integers from 0 to 10, and (l+m+n) represents integers from 1 to 20; in formula (2), R2 independently represents a hydrogen atom, methyl, or ethyl, o, p, q, r, and s independently represent integers from 0 to 10, and (o+p+q+r+s) represents integers from 1 to 20.

10. The resin composition as claimed in claim 1 or 2, wherein, The content of compound (B1) is 45 parts by mass or more and 90 parts by mass or less relative to the total of 100 parts by mass of compound (B1) and compound (B2), and the content of compound (B2) is 10 parts by mass or more and 55 parts by mass or less relative to the total of 100 parts by mass of compound (B1) and compound (B2).

11. The resin composition as claimed in claim 1 or 2, wherein, The maleimine compound (BA-1) comprises one or more of the following groups: maleimine compounds selected from those represented by formula (3) and bismaleimine compounds containing the constituent units represented by formula (4) and maleimine groups at both ends of the molecular chain; wherein, n3 represents an integer from 1 to 30; wherein, R11 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms, R12 represents a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms, R13 each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms, and n5 represents an integer from 1 to 10.

12. The resin composition as claimed in claim 1 or 2, wherein, The maleimide compound (BA-2) comprises one or more of the group consisting of maleimide compounds represented by formula (5) and maleimide compounds represented by formula (6); wherein R 8 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and R 9 each independently represents a hydrogen atom or a methyl group; wherein R 10 each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group, and n4 represents an integer from 1 to 10.

13. The resin composition of claim 1 or 2 further contains fluxing agent (C).

14. The resin composition as claimed in claim 13, wherein, The fluxing agent (C) contains rosin-based resins.

15. The resin composition of claim 1 or 2 further contains a hardening catalyst (E).

16. The resin composition as claimed in claim 15, wherein, The curing catalyst (E) comprises one or more compounds selected from the group consisting of organic peroxides and imidazole compounds.

17. The resin composition as claimed in claim 1 or 2, wherein, The content of the aminotriphenolic varnish resin (A) is 1 to 60 parts by mass relative to the total of 100 parts by mass of the aminotriphenolic varnish resin (A) and the compound (B).

18. The resin composition as claimed in claim 1 or 2, wherein, The content of compound (B) is 40 to 85 parts by mass relative to the total of 100 parts by mass of the aminotriphenolic varnish resin (A) and compound (B).

19. The resin composition of either claim 1 or 2 is used as a subfiller.

20. A laminate comprising: a support substrate, and a resin composition layer laminated on the support substrate and containing a resin composition as claimed in any one of claims 1 to 19.

21. The stack-up as described in claim 20, wherein, The thickness of the resin composition layer ranges from 5 to 500 μm.

22. A semiconductor wafer having a resin composition layer, comprising: a semiconductor wafer, and a layer stacked on the semiconductor wafer and formed using a resin composition as claimed in any one of claims 1 to 19.

23. A semiconductor wafer mounting substrate having a resin composition layer, comprising: a semiconductor wafer mounting substrate, and a layer stacked on the semiconductor wafer mounting substrate and formed using a resin composition as claimed in any one of claims 1 to 19.

24. A semiconductor device comprising: a semiconductor wafer having a resin composition layer as claimed in claim 22 or a substrate for mounting a semiconductor wafer having a resin composition layer as claimed in claim 23.