Material layer deposition methods, semiconductor processing systems, and related computer program products

Abstract

A material layer deposition method includes supporting a substrate in a preclean module and exposing the substrate to a preclean etchant while supported within the preclean module. The substrate is transferred to a deposition module and exposed to an adsorbate while supported within the deposition module. A material layer is the deposited onto the substrate while supported within the deposition module subsequent to exposing the substrate to the adsorbate. Semiconductor processing systems and computer program products are also described.

Description

[Technical Field]

[0001] This disclosure is generally related to the manufacture of semiconductor components, and more particularly to the deposition of material layers onto a substrate during the manufacture of semiconductor components. [Previous Technology]

[0002] Semiconductor components, such as integrated circuits and power electronic components, are typically manufactured using material layers deposited onto a substrate. The material layer is generally deposited by: loading the substrate into a deposition reactor, heating the substrate to the desired deposition temperature, and exposing the substrate to a material layer precursor, such as using an epitaxial process, to allow the material layer to be deposited onto the substrate. Once the material layer is deposited onto the substrate, the substrate is typically removed from the deposition reactor and transported for further processing, suitable for semiconductor components under manufacture.

[0003] In some semiconductor components, the performance of the semiconductor component may be affected by oxygen-containing substances residing on the surface of the substrate at the start of the material layer deposition process. For example, oxygen-containing substances residing on the surface of the substrate may affect surface roughness or otherwise interrupt epitaxial growth on the substrate surface, thereby potentially altering other desired electrical properties in the material layer. Oxygen-containing substances residing on the surface of the substrate at the start of the deposition process can also be incorporated into the material layer as interfacial oxygen, thereby also potentially altering the electrical properties of the material layer. Such oxygen-containing substances can reside on the surface of the substrate by exposing the substrate to oxygen in the environment contained within the semiconductor processing system used for the material deposition operation (e.g., a loading lock and / or substrate transfer chamber connected to the reactor used for the material layer deposition operation).

[0004] Various countermeasures exist to limit oxygen-containing substances residing on the substrate surface at the start of the material layer deposition process. For example, the substrate may undergo a pre-deposition etching operation, such as in a pre-cleaning module, to remove oxygen-containing substances residing on the substrate surface. Alternatively (or additionally), the substrate may undergo a pre-deposition baking operation, wherein the substrate is heated to remove oxygen-containing materials that may reside on the substrate surface. While generally satisfactory for its intended purpose, additional oxygen-containing substances may be acquired after pre-cleaning of the etched surface, such as those attributable to the presence within the semiconductor processing system, and the pre-deposition baking operation may be limited in temperature and / or duration by the thermal budget associated with the semiconductor components manufactured using the material layers subsequently deposited onto the substrate.

[0005] Such systems and methods are generally satisfactory for their intended purpose. However, there is still a need for improved material layer deposition methods, semiconductor processing systems, and related computer software products. This disclosure provides a solution to this need. [Summary of the Invention]

[0006] A method for depositing a material layer is provided. The method includes: supporting a substrate in a pre-cleaning module; and exposing the substrate to a pre-cleaning etchant while it is supported in the pre-cleaning module. The substrate is then transferred to a deposition module and exposed to an adsorbate while it is supported in the deposition module. After exposing the substrate to the adsorbate, a material layer is deposited on the substrate while it is supported in the deposition module.

[0007] In addition to one or more of the features described above, or as an alternative, other embodiments may include: exposing the substrate to a pre-cleaning etchant, including exposing the substrate to a fluorinated material provided via a spray head, while fixing the substrate relative to the spray head. An oxygen-containing substance may be removed from one upper surface of the substrate using the fluorinated material.

[0008] In addition to one or more of the features described above, or as an alternative, other embodiments may include: the transfer substrate further includes exposing the substrate to an environment containing an oxygen-containing substance before supporting the substrate within the deposition module.

[0009] In addition to one or more of the features described above, or as an alternative, other embodiments may include: delivering oxygen-containing material to the deposition module during the transfer of the substrate to the deposition module.

[0010] In addition to one or more of the features described above, or as an alternative, other embodiments may include: exposing the substrate to an adsorbate, including exposing the substrate to a doped material. The adsorbate may include at least one of an arsenic-containing material and a phosphorus-containing material.

[0011] In addition to one or more of the features described above, or as an alternative, other embodiments may include: the adsorbate may be composed of at least one of an arsenic-containing material and a phosphorus-containing material, or substantially composed of the latter.

[0012] In addition to one or more of the features described above, or as an alternative, other embodiments may include: the adsorbate includes at least one of arsine (AsH3) and phosphine (PH3).

[0013] In addition to one or more of the features described above, or as an alternative, other embodiments may include: the adsorbate may consist of at least one of arsine (AsH 3) and phosphine (PH 3) or substantially consist of the adsorbate.

[0014] In addition to one or more of the features described above, or as an alternative, other embodiments may include: transferring the substrate from the pre-cleaning module to the deposition module includes attaching an oxygen-containing material surface to one of the upper surfaces of the substrate. Exposing the substrate to the adsorbate may include using the adsorbate to displace the surface-attached oxygen-containing material from the upper surface of the substrate.

[0015] In addition to one or more of the features described above, or as an alternative, other embodiments may include: transferring the substrate from the pre-cleaning module to the deposition module including delivering an oxygen-containing material into the interior of one of the deposition modules. Exposing the substrate to the adsorbate may include passivating one of the upper surfaces of the substrate with the adsorbate to prevent the adsorbate from adhering the oxygen-containing material to the upper surface of the substrate.

[0016] In addition to one or more of the features described above, or as an alternative, other embodiments may include: supporting the substrate in the deposition module including fixing the substrate relative to a deposition chamber body. Exposing the substrate to the adsorbate may include exposing the substrate to the adsorbate while fixing the substrate relative to the deposition chamber body.

[0017] In addition to one or more of the features described above, or as an alternative, other embodiments may include: supporting the substrate in the deposition module including fixing the substrate relative to a deposition chamber body. Exposing the substrate to the adsorbate may include exposing the substrate to the adsorbate while fixing the substrate relative to the deposition chamber body.

[0018] In addition to one or more of the features described above, or as an alternative, other embodiments may include: supporting the substrate in the deposition module including positioning the substrate on a plurality of lifting pins, the lifting pins protruding above a substrate support member supported for rotation about one of the rotation axes within the deposition chamber. Exposing the substrate to the adsorbate may include exposing the substrate to the adsorbate while positioning the substrate on the lifting pins, the substrate being positioned above the substrate support member and fixed relative to the deposition chamber.

[0019] In addition to one or more of the features described above, or as an alternative, other embodiments may include: supporting the substrate in the deposition module by placing the substrate on the substrate support via a retracting lifting pin. Exposing the substrate to the adsorbate may include exposing the substrate to the adsorbate while placing the substrate on the substrate support and rotatably fixing it relative to the deposition chamber.

[0020] In addition to one or more of the features described above, or as an alternative, other embodiments may include: supporting the substrate in the deposition module including rotating the substrate about a rotation axis. Exposing the substrate to the adsorbate may include exposing the substrate to the adsorbate while the substrate is rotating about the rotation axis.

[0021] In addition to one or more of the features described above, or as an alternative, other embodiments may include: supporting the substrate in the deposition module including heating the substrate to a predetermined material layer deposition temperature. Exposing the substrate to the adsorbate may include exposing the substrate to the adsorbate during heating the substrate to the predetermined deposition temperature.

[0022] In addition to one or more of the features described above, or as an alternative, other embodiments may include: depositing a material layer onto a substrate further comprising rotating the substrate about a rotation axis. Depositing a material layer onto a substrate may include exposing the substrate to additional adsorbates such that the adsorbate contributes a dopant to the material layer.

[0023] In addition to one or more of the features described above, or as an alternative, other embodiments may include: depositing a material layer by heating the substrate to a predetermined material layer deposition temperature; exposing the substrate to a silicon-containing material layer precursor; and exposing the substrate to an additional adsorbate. The adsorbate may contribute a dopant to the material layer during the deposition of the material layer onto the substrate.

[0024] In addition to one or more of the features described above, or as an alternative, other embodiments may include: keeping the substrate within the deposition module between exposing the substrate to the adsorbate and depositing the material layer onto the substrate.

[0025] A semiconductor processing system is provided. The semiconductor processing system includes: a pre-cleaning module having a pre-cleaning etchant source; and a transfer chamber connected to the pre-cleaning module and including a substrate transfer robot, the substrate transfer robot being supported to move relative to the pre-cleaning module within the transfer chamber. A deposition module including an adsorbate source and a material layer precursor source is connected to the deposition module. A controller is operatively connected to the pre-cleaning module, the substrate transfer robot, and the deposition module. The controller includes a processor configured to communicate with a memory and, in response to instructions recorded on the memory, perform the following operations: supporting a substrate within the pre-cleaning module; exposing the substrate to a pre-cleaning etchant provided by the pre-cleaning etchant source while supported within the pre-cleaning module; transferring the substrate to the deposition module using the substrate transfer robot; exposing the substrate to an adsorbate provided by the adsorbate source while supported within the deposition module; and depositing a material layer onto the substrate using the material layer precursor source while the substrate is supported within the deposition module. The material layer is deposited onto the substrate after the substrate is exposed to the adsorbate, and before the material layer is deposited, the adsorbate displaces one of the oxygen-containing substances residing on the substrate from the substrate to limit the interfacial oxygen incorporated between the substrate and the material layer.

[0026] In addition to one or more of the features described above, or as an alternative, other embodiments may include: a substrate comprising a pattern having a silicon surface portion and a dielectric surface portion. The pre-cleaning etchant exposing the substrate to the pre-cleaning module may include removing an oxide from the silicon surface portion of the pattern.

[0027] In addition to one or more of the features described above, or as an alternative, other embodiments may include: a substrate comprising a pattern having a silicon surface portion and a dielectric surface portion. Transferring the substrate from a pre-cleaning module to a deposition module may include depositing an oxygen-containing material onto the silicon surface portion of the pattern.

[0028] In addition to one or more of the features described above, or as an alternative, other embodiments may include: a substrate comprising a pattern having a silicon surface portion and a dielectric surface portion. Exposing the substrate to an adsorbate includes displacing an oxygen-containing substance residing on the silicon surface portion of the substrate.

[0029] Another computer program product is provided. The computer program product includes: a non-transitory machine-readable medium having a plurality of program modules thereon having instructions recorded thereon, the instructions causing the processor to perform the following operations when read by a processor: supporting a substrate in a pre-cleaning module of a semiconductor processing system; exposing the substrate to a pre-cleaning etchant while it is supported in the pre-cleaning module; transferring the substrate to a deposition module of a semiconductor processing system via a transfer chamber of the semiconductor processing system; exposing the substrate to an adsorbate in the deposition module; and depositing a material layer onto the substrate while it is supported in the deposition module after the substrate has been exposed to the adsorbate.

[0030] This invention is provided to introduce a series of concepts in a simplified form. These concepts will be further described in detail in the following detailed description of specific embodiments of the disclosed content. This invention is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

Implementation Method

[0032] Reference is now made to the accompanying drawings, wherein like reference numerals identify similar structural features or configurations of this disclosure. For purposes of explanation and illustration and not limitation, partial views of embodiments of the semiconductor processing system according to this disclosure are shown in FIG1 and are generally designated by reference character 100. Other embodiments or configurations of the semiconductor processing system, material layer deposition method, and related computer program products according to this disclosure are provided in FIGS. 2 to 14, as will be described. The systems and methods of this disclosure can be used to deposit silicon-containing epitaxial material layers onto a substrate without introducing interface contaminants such as oxygen between the material layer and the substrate, such as during the fabrication of source and drain structures of transistor components in integrated circuits, but this disclosure is not limited to material layers used for source and drain structures, or generally any particular type of semiconductor component or component integration.

[0033] Although certain specific examples and embodiments are disclosed below, those skilled in the art will understand that the invention extends beyond the specific examples and / or uses disclosed herein, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited to the specific examples described below.

[0034] As used herein, the term "substrate" can refer to any (one or more) underlying materials, including any (one or more) underlying materials that can be modified or on which components, circuits, or films can be formed. "Substrate" can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. Substrate can be in any form, such as powder, plate, or workpiece. Substrate in plate form can include wafers of various shapes and sizes, and can include 300 mm silicon wafers. Substrate can be made of semiconductor materials, including, for example, silicon, germanium silicon, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. Substrate can be a blanket-type substrate (e.g., unpatterned) or may include patterns.

[0035] Referring to FIG1, a semiconductor processing system 100 is shown. The semiconductor processing system 100 may include a loading port 102, a front-end module 104, and a loading lock 106. The semiconductor processing system 100 may also include a transfer module 108, a pre-cleaning module 110, a deposition module 112, and a controller 114. Although shown and described herein as having a specific configuration, such as a clustered platform including four processing modules, it should be understood and appreciated that the semiconductor processing system 100 may have different configurations in other embodiments of this disclosure and remain within the scope of this disclosure.

[0036] Loading port 102 can be connected to front-end module 104 and is configured to hold pod 2 containing substrate 4 thereon. In some embodiments, substrate 4 may include a pattern 6 having silicon surface portions 8 and non-silicon surface portions 10, such as dielectric or nitride surface portions. According to some embodiments, substrate 4 may be a blanket-type substrate without a pattern. In the illustrated embodiment, semiconductor processing system 100 has three loading ports. Those skilled in the art will understand from this disclosure that semiconductor processing system 100 may have fewer or more loading ports and remain within the scope of this disclosure.

[0037] The front-end module 104 can be connected to the loading port 102 and includes a front housing 116 for accommodating the front-end substrate transfer robot 118. The front-end substrate transfer robot 118 can be configured within the front housing 116 and supported for movement within the housing relative to the loading port 102. The front-end substrate transfer robot 118 can be further configured to transfer substrates, such as substrate 4, between the loading port 102 and the loading lock 106.

[0038] Load lock 106 is connectable to front-end module 104 and includes a load lock chamber 120, a transfer stage 122, and a front-end gate valve 124. Load lock chamber 120 accommodates transfer stage 122 and is connected to front-end housing 116 via front-end gate valve 124. Transfer stage 122 may be configured to support one or more substrates, such as substrate 4, during transfer between front-end module 104 and transfer module 108. Front-end gate valve 124 may couple load lock chamber 120 to front-end housing 116 and is configured to provide selective communication between load lock chamber 120 and front-end housing 116. In the illustrated embodiment, semiconductor processing system 100 has two load locks. Those skilled in the art will understand from this disclosure that semiconductor processing system 100 may have fewer or additional load locks and remain within the scope of this disclosure.

[0039] Referring to FIG. 2, the transfer module 108 may include a transfer chamber 126, a rear gate valve 128, and a rear substrate transfer robot 130. The transfer chamber 126 may accommodate the rear substrate transfer robot 130 and is connected to the loading lock chamber 120 via the rear gate valve 128. The rear substrate transfer robot 130 may be configured to transfer substrates, such as substrate 4, between transfer stage 122 modules (e.g., pre-cleaning module 110 and / or deposition module 112) connected to the transfer module 108. The rear substrate transfer robot 130 may be further configured to transfer substrates between modules connected to the transfer chamber 126, for example, between the pre-cleaning module 110 and the deposition module 112 (shown in FIG. 1). The rear gate valve 128 may couple the transfer chamber 126 to the loading lock chamber 120 and is configured to provide selective communication between the transfer chamber 126 and the loading lock chamber 120. Although shown and described herein as having a single transfer module 108, it should be understood and appreciated that the semiconductor processing system 100 may have two or more transfer chambers and remain within the scope of this disclosure.

[0040] Referring to FIG. 3, the pre-cleaning module 110 may be configured to pre-clean a substrate (e.g., substrate 4) using a dry etching technique. In this regard, the pre-cleaning module 110 may be configured to remove oxides (e.g., oxides 30 bonded to silicon forming substrate 4) from an upper surface of substrate 4, such as the silicon surface portion 8 of pattern 6 (shown in FIG. 1) on substrate 4. In the illustrated embodiment, the pre-cleaning module includes a pre-cleaning chamber 132, a pre-cleaning gate valve 134, and a pre-cleaning stage 136. As shown and described herein, the pre-cleaning module 110 also includes a spray head 138, a transfer tube 140, and a pre-cleaning etchant source 142. As those skilled in the art will understand from this disclosure, the pre-cleaning module 110 may have different configurations in other embodiments and remain within the scope of this disclosure.

[0041] The pre-cleaning chamber 132 houses the pre-cleaning stage 136 and is connected to the transfer chamber 126 via a pre-cleaning gate valve 134. The pre-cleaning gate valve 134 is configured to provide selective communication between the pre-cleaning chamber 132 and the transfer chamber 126 to transfer the substrate 4 between the pre-cleaning stage 136 and the deposition module 112 using a back-end substrate transfer robot 130. The pre-cleaning stage 136 is disposed inside the pre-cleaning chamber 132 and is fluidly coupled to the transfer tube 140 via a spray head 138. The spray head 138 is fixed within the pre-cleaning chamber 132 between the pre-cleaning stage 136 and the transfer tube 140 and is configured to deliver the pre-cleaning etchant 12 to the substrate 4 when placed on the pre-cleaning stage 136.

[0042] Transfer tube 140 connects pre-cleaning etchant source 142 to pre-cleaning chamber 132 and fluidly couples pre-cleaning etchant source 142 to pre-cleaning chamber 132 therethrough. Consideredly, pre-cleaning etchant source 142 includes pre-cleaning etchant 12 and is configured to provide pre-cleaning etchant 12 to pre-cleaning chamber 132 via transfer tube 140. Pre-cleaning etchant 12 is selected to chemically remove oxide 30 from the upper surface 16 of substrate 4, for example, by breaking the bonds between silicon atoms and oxygen atoms in silicon oxide on the upper surface 16 of substrate 4 (e.g., on the silicon surface portion 8 of pattern 6 (shown in FIG. 1)). In some embodiments, pre-cleaning etchant 12 may comprise a fluorinated material.

[0043] According to some embodiments, the pre-cleaning etchant 12 may include hydrofluoric acid (HF). In such embodiments, the hydrofluoric acid may be generated in situ, for example, at the upper surface 16 of the substrate 4, such as by delivering anhydrous hydrogen fluoride (aHF) and water (H2O) vapor to the substrate 4 in a coordinated or sequential manner. It is also contemplated that the pre-cleaning etchant source 142 may be connected to the pre-cleaning chamber 132 via a remote plasma unit 144, and the remote plasma unit 144 may deliver the pre-cleaning etchant 12 as one or more free radical substances to the substrate 4.

[0044] Referring to FIG4, the deposition module 112 may include a deposition gate valve 146, a deposition chamber 148, and a heater element array 150. The deposition module 112 may also include a separator 152, a substrate support 154, and a support member 156. The deposition module 112 may further include a shaft member 158, a plurality of lifting pins 160, a lifting and rotating module 162, and a precursor configuration 164. The deposition chamber 148 is configured to support the substrate during the deposition of a material layer onto the substrate (e.g., deposition of material layer 14 (shown in FIG8) onto substrate 4) and is coupled to the transfer chamber 126 via the deposition gate valve 146. The deposition gate valve 146 is configured to provide selective fluid communication between the transfer chamber 126 and the deposition chamber 148, such that when the lifting pin 160 protrudes above the substrate support 154 before the material layer is deposited, the rear substrate transfer robot 130 (shown in FIG. 1) can position the substrate 4 on the lifting pin 160 and retrieve the substrate 4 from the lifting pin after the material layer 14 is deposited.

[0045] The deposition chamber 148 includes a transparent body 166 at least partially formed of a transmissive material 168, extending between an injection end 170 and a longitudinally opposite discharge end 172. An injection flange 174 is connected to the injection end 170 of the transparent body 166, coupling a deposition gate valve 146 to the transparent body 166 and fluidly coupling a precursor configuration 164 to the interior 176 of the transparent body 166. A discharge flange 178 is connected to the discharge end 172 of the transparent body 166, fluidly coupling the interior 176 of the transparent body 166 to a discharge source 180, and is configured to deliver residual precursors and / or reaction products 34 generated by the deposition module 112 to the external environment of the semiconductor processing system 100 (shown in FIG. 1) during the deposition of the material layer 14 (shown in FIG. 8) onto the substrate 4. Consideration has been made to the fact that the heater element array 150 includes a plurality of lamps (e.g., linear lamps and / or spot lamps) supported outside the transparent body 166, the lamps being configured to radiatively heat the substrate 4 using infrared electromagnetic radiation transmitted via the transmissive material 168. In some embodiments, the transparent body 166 may have a flat upper and / or lower surface. According to some embodiments, the transparent body 166 may define an arcuate profile and / or have a dome-shaped shape. It has also been considered that, according to some embodiments, by means of a non-limiting embodiment, the transmissive material 168 forming the transparent body 166 may include a ceramic material, such as sapphire or quartz.

[0046] The separator 152 is housed within the interior 176 of the transparent body 166, dividing the interior 176 of the transparent body 166 into an upper chamber 182 and a lower chamber 184, and has an aperture 186 extending through the separator 152 and fluidly coupling the upper chamber 182 to the lower chamber 184. The substrate support 154 is supported to rotate R about a rotation axis 188 within the aperture 186 (shown in FIG. 7), and a lifting pin 160 is slidably housed therein to move between an extended position 190 and a retracted position 192 (shown in FIG. 5), and is configured to place the substrate 4 thereon during the deposition of the material layer 14 (shown in FIG. 8). The support member 156 is disposed within the lower chamber 184, rotated R relative to the substrate support 154 and coupled to the shaft member 158. A shaft member 158 extends through the lower wall of the transparent body 166, is rotatably fixed relative to the support member 156 by a radius R, and operatively connects the lifting and rotating module 162 to the substrate support 154 to allow the substrate support 154 to rotate about a rotation axis 188. In some embodiments, the separator 152 may be formed of an opaque material 194, such as silicon carbide and / or carbon-containing materials such as graphite, which are opaque to infrared electromagnetic radiation emitted by the heater element array 150. According to some embodiments, the substrate support 154 may be formed of an opaque material 194. It has also been considered that, according to some embodiments, the lifting and rotating module 162 may be operatively connected to a lifting pin actuator 196 extending around the shaft member 158 to move the lifting pin 160 between a retracted position 192 and an extended position 190. Suitable embodiments of lifting pin actuators include those shown and described in U.S. Patent No. 10,770,336 to Hill et al., issued September 8, 2020, the contents of which are incorporated herein by reference.

[0047] Precursor configuration 164 is connected to deposition module 112 and includes adsorbate source 198 and material layer precursor source 101. Precursor configuration 164 may also include dopant source 103, deposition etchant source 105, and purge or carrier gas source 107. Adsorbate source 198 is configured to provide adsorbate 18 to deposition module 112, and deposition chamber 148 allows adsorbate to flow across substrate 4 to expose substrate 4 to adsorbate 18. In some embodiments, adsorbate 18 may include (e.g., composed of or substantially composed of arsenic-containing materials) arsenic-containing materials. Suitable embodiments of arsenic-containing materials include arsine (AsH3). According to some embodiments, adsorbate 18 may include (e.g., composed of or substantially composed of phosphorus-containing materials) phosphorus-containing materials. Suitable embodiments of phosphorus-containing materials include phosphine (PH3). Consideration has been made to the possibility that the adsorbate 18 may include (e.g., composed of or substantially composed of) the following: an oxygen-free compound that has a higher affinity for the exposed silicon surface compared to oxygen-containing substances such as water and oxygen, and that the higher affinity causes the adsorbate 18 to displace oxygen-containing substances from the surface and / or passivate the exposed silicon surface by occupying surface sites that would otherwise be available for oxygen-containing substances to reside in the surrounding environment of the substrate 4.

[0048] A material layer precursor source 101 is configured to provide a material layer precursor 20 to a deposition module 112. A deposition chamber 148 allows the material layer precursor to flow across a substrate 4, exposing the substrate 4 to the material layer precursor 20, thereby depositing a material layer 14 (shown in FIG. 8) onto the substrate 4. A dopant source 103 is configured to provide a doped precursor 22 to the deposition chamber. The deposition chamber 148 also allows the doped precursor to flow across the substrate 4, exposing the substrate 4 to the doped precursor 22 during the deposition of the material layer 14. A deposition etchant source 105 and a purge or carrier gas source 107 are similarly configured to provide a deposition etchant 24 and a purge or carrier gas 26 to the deposition chamber 148, respectively. Consideration is that during the deposition of the material layer 14 onto the substrate 4, the deposition chamber 148 then allows the deposition etchant 24 and the purge or carrier gas 26 to flow through the substrate. In some embodiments, the material layer precursor 20 may include a silicon-containing precursor, such as a silicon-containing material suitable for depositing an epitaxial silicon material layer onto the substrate 4. Examples of suitable silicon-containing precursors include silane (SiH3) and dichlorosilane (H2SiCl2). According to some embodiments, the doped precursor 22 may include n-type or p-type dopants, such as arsenic (As) or phosphorus (P). The deposition etchant 24 may include a halide-containing material such as hydrochloric acid (HCl), and the purge or carrier gas 26 may include hydrogen (H2) or nitrogen (N2). It has also been considered that, in some embodiments, the adsorbate source 198 and the dopant source 103 may be a common source, and whether the adsorbate 18 is used to displace oxygen-containing substances from the upper surface 16 of the substrate or to contribute dopant to the developing material layer is determined by the conditions within the deposition chamber 148, such as the presence or absence of the material layer precursor 20.

[0049] Continuing to refer to FIG. 1, the deposition of material layer 14 (shown in FIG. 8) onto a substrate can be achieved by transferring substrate 4 to a pre-cleaning module 110. Once in the pre-cleaning module 110, the pre-cleaning module 110 provides a pre-cleaning etchant 12 to remove contaminants, such as oxide 30, from the surface of substrate 4. The back-end substrate transfer robot 130 then transfers substrate 4 to deposition module 112 under pre-cleaning conditions (e.g., removal of oxide 30 from the upper surface 16 of substrate 4). Once positioned within deposition module 112, substrate 4 is heated by heater element array 150 (shown in FIG. 3) and exposed to material layer precursor 20 (shown in FIG. 3), such that material layer 14 (shown in FIG. 8) is deposited onto the upper surface 16 of substrate 4. Substrate 4 is then removed from deposition module 112, returned to pod 2 via transfer module 108 and front-end module 104, and conveyed for further processing, suitable for semiconductor components being manufactured using material layer 14.

[0050] Material layer deposition can be achieved by a controller 114, which is operatively connected to a module of the semiconductor processing system 100 via a component interface 109 and a wired or wireless connection 111. In the illustrated embodiment, the controller 114 includes a processor 113 connected to the component interface 109, a user interface 115 operatively associated with the processor 113, and a memory 117 including a non-transitory machine-readable medium having a plurality of program modules 119 recorded on the medium. The plurality of program modules 119 include instructions that, when read by the processor 113, cause the processor 113 to perform certain operations. In operation is the operation of method 200 (shown in FIG. 8), and as will be described, the memory 117 and the plurality of program modules 119 form a computer program product 300 in this respect, by which the processor 113 can execute method 200. Although shown and described herein with a particular architecture, it should be understood and appreciated that controller 114 may have other architectures in other embodiments, such as a distributed architecture, and remain within the scope of this disclosure.

[0051] As explained above, in some semiconductor processing systems, contaminants, including oxygen-containing material 32 (shown in FIG. 2), can penetrate into the transfer chamber 126 during operation. For example, oxygen-containing materials such as water (H₂O) vapor and oxygen (O₂) can penetrate into the transfer chamber 126 during substrate transfer between the front-end module 104 and the transfer chamber 126. Residual etchant and / or etchant product materials can penetrate into the transfer chamber 126 as contaminants during substrate transfer between the pre-cleaning module 110 and the transfer chamber 126. Furthermore, residual precursors and / or reaction products can penetrate into the transfer chamber 126 as contaminants during substrate transfer between the deposition module 112 and the transfer module 108.

[0052] Once such contaminants enter the transfer chamber 126, they can adhere to the exposed silicon on the upper surface 16 of the substrate 4 during the transfer between the pre-cleaning module 110 and the deposition module 112, thereby carrying the oxygen-containing material 28 (shown in FIG. 5) attached to the surface of the substrate 4. The contaminants can also (or alternatively) be transferred to the deposition module 112 during the transfer of the substrate 4 to the deposition chamber 158. Once carried by the substrate 4 into the deposition chamber 158 (or transferred using the substrate 4 into the deposition chamber 158), the contaminants and / or oxygen-containing materials can reside on the upper surface 16 of the substrate 4 (e.g., bonded to or not bonded to the exposed silicon atoms on the upper surface 16 of the substrate 4). To limit (or prevent) the co-emergence of such contaminants with interfacial contaminants between the upper surface 14 of the substrate 4 and the material layer 14 (shown in FIG8), instructions recorded in a plurality of program modules 119 include an operation of exposing the substrate 4 to adsorbate 18 from the upper surface 16 of the substrate 4 to displace contaminants including oxygen-containing substances before depositing the material layer 14, as shown in FIG5 to FIG7.

[0053] Referring to FIG. 5, the substrate 4 may be exposed to the adsorbate 18, while being fixed relative to the deposition chamber 148 and supported on a plurality of lifting pins 160 above the substrate support 154. The adsorbate 18 may displace at least a portion of the oxygen-containing material 28 adhering to the upper surface 16 of the substrate 4, for example from the silicon surface portion 8 (shown in FIG. 1) of pattern 6 (shown in FIG. 1). In this regard, it is considered that the adsorbate 18 may be preferred over unbound oxygen-containing materials, such as oxygen or moisture, residing on the upper surface 16 of the substrate 4. In the case of preference over oxygen-containing materials, the adsorbate displaces the oxygen-containing materials, thereby eliminating the presence of oxygen-containing materials on the upper surface 16 of the substrate 4 at the start of the deposition of the material layer 14, and thus preventing the oxygen-containing materials from being incorporated as interfacial oxygen between the material layer 14 and the substrate 4. Alternatively (or additionally), the adsorbate 18 may compete with the oxygen-containing substance 32 in the deposition chamber 148, thereby passivating the upper surface 16 of the substrate 4 and limiting (or preventing) the oxygen-containing substance 32 from adhering to the upper surface 16 of the substrate.

[0054] Referring to FIG. 6, the substrate 4 may be placed on the substrate support 154 and fixed relative to the deposition chamber 148, for example, by moving a plurality of lifting pins 160 from an extended position (shown in FIG. 4) to a retracted position 192, while being exposed to the adsorbate 18. The adsorbate 18 may displace at least a portion of the oxygen-containing material 28 adhering to the upper surface 16 of the substrate 4, for example, from the silicon surface portion 8 (shown in FIG. 1) of pattern 6 (shown in FIG. 1). As an alternative to simultaneous exposure while positioned on the lifting pins 160, or in addition to simultaneous exposure while positioned on the lifting pins 160, simultaneous exposure to the adsorbate 18 while placed on the substrate support 154 may be performed. Alternatively (or additionally), the adsorbate 18 may compete with the oxygen-containing material 32 within the deposition chamber 148, thereby passivating the upper surface 16 of the substrate 4 and limiting (or preventing) the adsorption of the oxygen-containing material 32 onto the upper surface 16 of the substrate.

[0055] Referring to FIG. 7, the substrate 4 may be exposed to the adsorbate 18 while rotating on the substrate support 154 relative to the deposition chamber 148, for example, when the lifting and rotating module 162 rotates the substrate support 154 about the rotation axis 188. The adsorbate 18 may displace at least a portion of the oxygen-containing material 28 adhering to the upper surface 16 of the substrate 4, for example, from the silicon surface portion 8 (shown in FIG. 1) of pattern 6 (shown in FIG. 1). As an alternative to being exposed to the adsorbate 18 while positioned on the lifting pin 160 and / or while placed on the substrate support 154 and fixed relative to the deposition chamber 148, exposure to the adsorbate 18 may be performed simultaneously with the substrate support 154. As an alternative to either (or both) being exposed to the adsorbate 18 while positioned on the lifting pin 160 and while placed on the substrate support 154 and fixed relative to the deposition chamber 148, exposure to the adsorbate 18 may be performed while rotating with the substrate support 154. Alternatively (or additionally), the adsorbate 18 may compete with the oxygen-containing substance 32 in the deposition chamber 148, thereby passivating the upper surface 16 of the substrate 4 and limiting (or preventing) the oxygen-containing substance 32 from adhering to the upper surface 16 of the substrate.

[0056] Referring to FIG8, a material layer 14 may be deposited onto the substrate 4 after the substrate 4 has been exposed to the adsorbate 18. In some embodiments, depositing the material layer 14 onto the substrate 4 may include exposing the substrate to the adsorbate 18 together with exposing the substrate 4 to the material layer precursor 20. In this respect, the adsorbate 18 may be used as a dopant precursor during the deposition of the material layer 14, such that dopants within the adsorbate 18 may be made available for incorporation into the material layer 14 during deposition by co-flushing the deposition etchant 24.

[0057] In some embodiments, the substrate 4 may be exposed to an arsenic-containing material before the material layer precursor is provided to the substrate, such that the arsenic-containing material displaces oxygen-containing substances, such as oxygen and / or moisture, from the upper surface 16 of the substrate 4, and thereafter co-flows with the material layer precursor so that the arsenic contained in the arsenic-containing material is incorporated into the material layer 14. The substrate 4 may be exposed to a phosphorus-containing material before the material layer precursor is provided to the substrate, such that the phosphorus-containing material displaces oxygen-containing substances, such as oxygen and / or moisture, from the upper surface 16 of the substrate 4, and thereafter co-flows with the material layer precursor so that the phosphorus contained in the phosphorus-containing material is incorporated into the material layer 14.

[0058] Referring to Figures 9 to 14, a material layer deposition method 200 is shown. As shown in Figure 9, method 200 includes transferring a substrate to a pre-cleaning module, for example, transferring substrate 4 (shown in Figure 1) to pre-cleaning module 110 (shown in Figure 1), as shown by box 202. Method 200 also includes exposing the substrate to an etchant, such as pre-cleaning etchant 12 (shown in Figure 3), while it is supported within the pre-cleaning module, as shown by box 204. Method 200 further includes transferring the substrate from the pre-cleaning module to a deposition module, such as deposition module 112 (shown in Figure 1), as shown by box 206. Once transferred to the deposition module, the substrate is exposed to an adsorbate, such as adsorbate 18 (shown in Figure 4), as shown by box 208. Once exposed to the adsorbate, a material layer is deposited onto the substrate, such as material layer 14 (shown in Figure 8), as shown by box 210. In some embodiments, the substrate may include a pattern having a silicon surface portion and a dielectric surface portion, for example, a pattern of a silicon surface portion 8 (shown in FIG. 1) and a non-silicon surface portion 10 (shown in FIG. 1), as shown by box 212. According to some embodiments, the substrate may be a blanket-covered substrate without a pattern, as shown by box 214.

[0059] Supporting the substrate within the pre-cleaning module (frame 202) may include supporting the substrate on a rotatably fixed substrate support. Supporting the substrate within the pre-cleaning module (frame 202) may include supporting the substrate between the pre-cleaning substrate support and a spray head, such as between the pre-cleaning table 136 (shown in FIG. 3) and the spray head 138 (shown in FIG. 3). Supporting the substrate within the pre-cleaning module (frame 202) may include fluidly coupling the substrate to an etchant source, such as the pre-cleaning etchant source 142 (shown in FIG. 3), via the spray head. Supporting the substrate within the pre-cleaning module (frame 202) may include fluidly coupling the substrate to the etchant source via a remote plasma unit, such as the remote plasma unit 144 (shown in FIG. 3), to provide a first etchant as a free radical substance to the substrate via the spray head.

[0060] As shown in FIG10, exposing the substrate to a pre-cleaning etchant (box 204) may include exposing the substrate to a fluorine-containing material, as shown by box 216. For example, a fluorine radical substance may be delivered from an etchant source to the substrate. Hydrofluoric acid (HF) may be delivered to the surface of the substrate, as shown by box 218. Hydrofluoric acid (HF) precursors, such as anhydrous hydrogen fluoride (aHF) and water vapor may be delivered to the surface of the substrate, as shown by box 220. aHF and water vapor may arrive at the substrate concurrently, for example, under temperature and pressure conditions that do not produce hydrofluoric acid (HF), also as shown by box 220. aHF and water vapor may be delivered sequentially to the substrate, thereby generating hydrofluoric acid in situ using water adsorbed from the surface of the substrate (e.g., at the surface of the substrate). The pre-cleaning etchant may flow by fluidly coupling a pre-cleaning etchant source, such as pre-cleaning etchant source 142 (shown in FIG3), to a spray nozzle on the substrate, as shown by box 222. Considering that exposing the substrate to a pre-cleaning etchant (box 204) may include removing oxygen-containing material (bonded material), such as oxide 30 (shown in FIG. 2), from the upper surface of the substrate, as shown by box 224.

[0061] As shown in FIG11, transferring the substrate from the pre-cleaning module to the deposition module (box 206) may include exposing the substrate to contaminants residing within the transfer body, as shown by box 226. Transferring the substrate from the pre-cleaning module to the deposition module may include depositing oxygen-containing material after the substrate has been exposed to oxygen-containing material in the environment within the transfer chamber and / or transferring oxygen-containing material from the substrate to the deposition module, for example, depositing it onto a silicon surface portion of the substrate, as shown by box 228. In this way (or where), oxygen-containing material may be deposited and resided after pre-cleaning the substrate (e.g., unbonded or weakly bonded due to the affinity between the silicon surface and the oxygen-containing material), as shown by box 230. Before depositing a material layer onto the substrate, for example, before depositing a material layer onto the substrate, oxygen-containing material may be deposited onto the substrate, as shown by box 232. After pre-cleaning in the pre-cleaning module and before depositing the material layer onto the substrate in the deposition module, oxygen-containing materials can be deposited onto the substrate without unloading it from the semiconductor processing system, for example without transferring the substrate to the loading lock 106 (shown in FIG1).

[0062] As shown in FIG12, exposing the substrate to an adsorbate (box 208) may include exposing the substrate to a doped material, such as a doped material subsequently used during the deposition of a material layer onto the substrate (box 210), as shown by box 234. Exposing the substrate to an adsorbate (box 208) may include exposing the substrate to an adsorbate comprising (e.g., composed of or substantially composed of arsenic-containing materials) an arsenic-containing material, as shown by box 236. Exposing the substrate to an adsorbate (box 208) may include exposing the substrate to an adsorbate comprising (e.g., composed of or substantially composed of phosphorus-containing materials) a phosphorus-containing material, as shown by box 238. In some embodiments, the arsenic-containing material may include (e.g., composed of or substantially composed of arsine) arsine (AsH3), as shown by box 240. According to some embodiments, the phosphorus-containing material may include (e.g., composed of or substantially composed of phosphine) phosphine (PH 3), as shown in box 242. Consideredly, according to some embodiments, adsorbates displace oxygen-containing substances residing on the upper surface of the substrate, such as those included on the silicon portions of a pattern on the substrate, as shown in box 244.

[0063] As shown in FIG13, replacing oxygen-containing material with adsorbate (box 244) may include supporting the substrate within a deposition chamber, such as deposition chamber 148 (shown in FIG4), and fixing the substrate relative to the deposition chamber body, as shown in box 246. The substrate may be exposed to the adsorbate while being fixed relative to the deposition chamber body, as shown in box 248. Replacing oxygen-containing material with adsorbate (box 244) may include positioning the substrate on a plurality of lifting pins protruding above a substrate support, such as a plurality of lifting pins 160 (shown in FIG4) protruding above a substrate support 154 (shown in FIG4), as shown in box 250.

[0064] In some embodiments, the substrate may be exposed to the adsorbate while positioned on a plurality of lifting pins protruding above the substrate support, as shown in box 252. Displacing oxygen-containing material from the substrate (box 244) may include placing the substrate on the substrate support by retracting the lifting pins via the substrate support, as shown in box 254. The substrate may be exposed to the adsorbate while positioned on the substrate support, as shown in box 256. According to some embodiments, the substrate may be heated while positioned on the substrate support and exposed to the adsorbate, such as during heating to a predetermined deposition temperature, as shown in box 258. It has also been considered that, according to some embodiments, the substrate may be rotated by the substrate support while exposed to the adsorbate, as shown in box 260.

[0065] As shown in FIG. 14, depositing a material layer onto a substrate (box 210) may include, for example, heating the substrate to a predetermined deposition temperature using a heater element array 150 (shown in FIG. 4), as shown in box 262. Depositing a material layer onto a substrate (box 210) may include exposing the substrate to a silicon-containing material included in a material layer precursor, such as material layer precursor 20 (shown in FIG. 4), as shown in box 264. Depositing a material layer onto a substrate (box 210) may include, for example, exposing the substrate to additional adsorbates such that the adsorbate contributes dopants to the silicon-containing material layer deposited onto the substrate, as shown in box 266. As shown in boxes 268 and 270, the substrate may then be exposed to additional adsorbates and a second material layer may subsequently be deposited onto the material layer, such as in embodiments where the material layer is a low-resistivity material layer formed of n-EPI and the second layer is a barrier layer, as shown in box 272. Consideration has been made to the possibility that the substrate may be retained within the deposition module between the deposition of the first material layer and the second material layer, as shown in box 274.

[0066] The deposition of epitaxial material layers can be affected by the chemical state and / or roughness of the surface on which the material layers are grown. For example, oxygen-containing substances residing on the surface of a substrate at a density of approximately 1e 13 atoms per square centimeter may interrupt the deposition of some epitaxial layers, thereby potentially altering the electrical properties of the material layers. Although pre-deposition baking and / or surface pre-cleaning can be used to desorb oxygen-containing substances before material layer deposition, baking may be limited to certain types of substrates, such as the thermal sensitivity of patterned substrates, and additional oxygen-containing substances may be acquired by the pre-cleaned substrate before deposition during the transfer between the pre-cleaning module where pre-cleaning occurs and the deposition module where material layer deposition occurs. Without being limited by any particular theory or operating method, it is believed that oxidation of the substrate surface may occur during the transfer of the pre-cleaned substrate to the deposition module due to the intermixing of gases residing in the deposition module and the substrate transfer module that couples the deposition module to the pre-cleaning module.

[0067] In the embodiments described herein, the surface of the substrate may be passivated with an adsorbate prior to the deposition of a material layer onto the substrate to prevent the adsorption of oxygen-containing substances (e.g., oxides) residing on the surface of the substrate. In some embodiments, the adsorbate may have a chemical substance similar to the chemical substance of the material layer deposited onto the substrate, such as adsorbate molecules having the same atoms as those used as dopants in the material layer deposited onto the substrate. In this regard, the substrate may be exposed to an adsorbate including arsenic, and the material layer subsequently deposited onto the substrate may include arsenic, such as by using arsine (AsH3) as an adsorbate and both the dopant material provided during the deposition of the material layer onto the substrate. In another embodiment, the substrate may be exposed to an adsorbate including phosphorus prior to the deposition of a material layer onto the substrate, and the substrate may subsequently be exposed to a dopant material including phosphorus during the deposition of the material layer onto the substrate, such as by using phosphine (PH3) as an adsorbate and both the dopant material provided during the deposition of the material layer onto the substrate.

[0068] Advantageously, the applicant's experiments show that adsorbate exposure during material layer deposition prior to material layer deposition can limit interfacial oxygen coalescence between the substrate and the epitaxial material layer deposited on the surface of the substrate. The applicant's experiments also show that adsorbate exposure prior to depositing a so-called barrier material layer onto the epitaxial material layer can limit (or completely eliminate) oxide regrowth during the stabilization of the deposition operation of stacking films onto the substrate. For a further advantage, exposing the substrate (or material layer) to the adsorbate prior to material layer deposition can exacerbate material layer transformation, for example, by increasing the concentration of dopant or incorporation components at the interface between the material layer and the underlying material layer or substrate. Furthermore, in embodiments where arsine (AsH₃) is used as the adsorbate, the coalesced arsenic atoms can occupy previously usable surface sites on the substrate (or the material layer on which another material layer is to be deposited), thereby preventing such oxygen adsorbates from entering these surface sites and effectively displacing oxygen adsorbates from the surface sites on the substrate or the material layer on which another material layer is to be deposited.

[0069] The specific embodiments shown and described are illustrative of the invention and its preferred mode and are not intended to limit the scope of the embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to indicate exemplary functional relationships and / or physical couplings between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and / or may not exist in some specific examples.

[0070] It should be understood that the configurations and / or methods described herein are illustrative in nature, and such specific examples or embodiments are not intended to be limiting, as many variations may exist. The specific conventions or methods described herein may represent one or more of any number of processing strategies. Thus, the various actions illustrated may be performed in the illustrated sequence, in other sequences, or in some cases omitted. The subject matter of this disclosure includes all novel but non-obvious combinations and sub-combinations of the various processes, systems, and configurations disclosed herein, as well as other features, functions, actions, and / or properties, and any and all equivalents thereof. [Simplified Explanation of the Diagram]

[0031] Figure 1 is a plan view of a semiconductor processing system according to the present disclosure, schematically showing a pre-cleaning module connected to a deposition module by a transfer module including a substrate transfer robot; Figure 2 is a cross-sectional side view of the transfer module of Figure 1 according to an embodiment, schematically showing a substrate transferred between the transfer module and the pre-cleaning module; Figure 3 is a cross-sectional side view of the pre-cleaning module of Figure 1 according to an embodiment, schematically showing a substrate supported in a pre-cleaning chamber below a spray head and pre-cleaned using a pre-cleaning etchant delivered via the spray head; Figure 4 is a cross-sectional side view of the deposition module of Figure 1 according to an embodiment, schematically showing a precursor configuration including an adsorbate source for passivating the substrate and an oxygen-containing substance introduced into the deposition module during positioning of the substrate within the deposition module; Figure 5 is a cross-sectional side view of the deposition module of Figure 1 according to an embodiment of the present disclosure, schematically showing the substrate exposed to the adsorbate while positioned on a lifting pin and above a substrate support within the deposition module. Figure 6 is a cross-sectional side view of the deposition module of Figure 1 according to an embodiment of the present disclosure, schematically showing the substrate exposed to adsorbate while placed on a substrate support within the deposition module; Figure 7 is a cross-sectional side view of the deposition module of Figure 1 according to an embodiment of the present disclosure, schematically showing the substrate exposed to adsorbate while rotating and heating within the deposition module; Figure 8 is a cross-sectional side view of the deposition module of Figure 1 according to an embodiment, showing the material layer deposited on the upper surface of the substrate using a material layer precursor and adsorbate as dopant sources; Figure 9 is a block diagram of a material layer deposition method according to the present disclosure, showing the operation of the method according to exemplary and non-limiting embodiments; Figure 10 is a block diagram of a portion of the material layer deposition method of Figure 9 according to an embodiment, showing the operation of pre-cleaning the substrate by exposing it to an etchant; Figure 11 is a block diagram of a portion of the material layer deposition method of Figure 9 according to an embodiment, showing the operation of transferring the pre-cleaned substrate to the deposition module via a contaminated environment. Figures 12 and 13 are block diagrams of a portion of the material layer deposition method of Figure 9 according to an embodiment, showing the operation of exposing the substrate to the adsorbate before depositing the material layer onto the substrate; and Figure 14 is a block diagram of a portion of the material layer deposition method of Figure 9 according to an embodiment, showing the operation of depositing the material layer onto the substrate after exposing the substrate to the adsorbate. It will be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the figures may be enlarged relative to other elements to aid in a better understanding of the specific examples illustrated in this disclosure.

Claims

1. A method for depositing a material layer, comprising: supporting a substrate in a pre-cleaning module; exposing the substrate to a pre-cleaning etchant while it is supported in the pre-cleaning module; transferring the substrate to a deposition module; exposing the substrate to an adsorbate while it is supported in the deposition module; and depositing a material layer onto the substrate while it is supported in the deposition module after exposing the substrate to the adsorbate.

2. As in request item 1, where, Exposing the substrate to the pre-cleaning etchant includes: exposing the substrate to a fluorinated material provided via a spray head while fixing the substrate relative to the spray head; and using the fluorinated material to remove an oxygen-containing substance from an upper surface of the substrate.

3. As in request item 1, where, The transfer of the substrate further includes: exposing the substrate to an environment containing an oxygen-containing substance; depositing the oxygen-containing substance onto an upper surface of the substrate before supporting the substrate in the deposition module; and transferring the oxygen-containing substance to at least one of the deposition modules.

4. As in request item 1, where, Exposing the substrate to the adsorbate includes exposing the substrate to a doped material.

5. As in request item 1, where, The adsorbate includes at least one of an arsenic-containing material and a phosphorus-containing material.

6. As in request item 1, wherein, The adsorbate includes at least one of arsine (AsH3) and phosphine (PH3).

7. As in request item 1, wherein, Transferring the substrate from the pre-cleaning module to the deposition module includes attaching an oxygen-containing material to one of the upper surfaces of the substrate, and exposing the substrate to the adsorbate includes using the adsorbate to displace the oxygen-containing material attached to the surface from the upper surface of the substrate.

8. As in request item 1, where, Supporting the substrate in the deposition module includes fixing the substrate relative to a deposition chamber body, and exposing the substrate to the adsorbate includes exposing the substrate to the adsorbate while fixing the substrate relative to the deposition chamber body.

9. As in request item 8, wherein, Supporting the substrate in the deposition module includes positioning the substrate on a plurality of lifting pins that protrude above a substrate support member supported for rotation about one of the rotation axes within the deposition module, and exposing the substrate to the adsorbate includes exposing the substrate to the adsorbate while positioning the substrate on the lifting pins and above the substrate support member.

10. As in request item 8, wherein, Supporting the substrate in the deposition module includes placing the substrate on the substrate support by retracting several lifting pins via a substrate support, and exposing the substrate to the adsorbate includes exposing the substrate to the adsorbate while placing the substrate on the substrate support and rotatably fixing it relative to the deposition module.

11. As in request item 8, wherein, Supporting the substrate in the deposition module includes rotating the substrate about a rotation axis, and exposing the substrate to the adsorbate includes exposing the substrate to the adsorbate while rotating the substrate about the rotation axis.

12. As in request item 8, wherein, Supporting the substrate in the deposition module includes heating the substrate to a predetermined material layer deposition temperature, and exposing the substrate to the adsorbate includes exposing the substrate to the adsorbate while heating the substrate to the predetermined deposition temperature.

13. As in request item 9, wherein, Depositing the material layer onto the substrate further includes rotating the substrate about the rotation axis, and wherein depositing the material layer onto the substrate includes exposing the substrate to the additional adsorbate such that an additional adsorbate contributes a dopant to the material layer.

14. As in request item 1, wherein, Depositing the material layer includes: heating the substrate to a predetermined material layer deposition temperature; exposing the substrate to a silicon-containing material layer precursor; and exposing the substrate to an additional adsorbate, wherein the additional adsorbate contributes a dopant to the material layer during the deposition of the material layer onto the substrate.

15. As in request item 1, wherein, The substrate is kept within the deposition module between exposing the substrate to the adsorbate and depositing the material layer onto the substrate.

16. A semiconductor processing system comprising: a pre-cleaning module having a pre-cleaning etchant source; a transfer chamber connected to the pre-cleaning module and including a substrate transfer robot supported for movement relative to the pre-cleaning module within the transfer chamber; a deposition module connected to the transfer chamber and having an adsorbate source and a material layer precursor source; and a controller operatively connected to the pre-cleaning module, the substrate transfer robot, and the deposition module, the controller including a processor configured to communicate with a memory and, in response to instructions recorded on the memory, to perform the following operations: supporting a substrate within the pre-cleaning module; exposing the substrate, while supported within the pre-cleaning module, to a pre-cleaning etchant provided by the pre-cleaning etchant source; transferring the substrate to the deposition module using the substrate transfer robot; and exposing the substrate, while supported within the deposition module, to an adsorbate provided by the adsorbate source. While the substrate is supported within the deposition module, a material layer is deposited onto the substrate using a material layer precursor source, wherein the material layer is deposited onto the substrate after the substrate has been exposed to the adsorbate; and wherein, Prior to depositing the material layer, one of the oxygen-containing substances residing on the substrate is replaced from the substrate to limit the incorporation of interfacial oxygen between the substrate and the material layer.

17. The system as described in request item 16, wherein, The substrate includes a pattern having a silicon surface portion and a dielectric surface portion, wherein exposing the substrate to the pre-cleaning etchant includes removing an oxide from the silicon surface portion of the pattern.

18. The system as described in request item 16, wherein, The substrate includes a pattern having a silicon surface portion and a dielectric surface portion, wherein transferring the substrate from the pre-cleaning module to the deposition module includes depositing the oxygen-containing material onto the silicon surface portion of the pattern.

19. The system as described in request item 16, wherein, The substrate includes a pattern having a silicon surface portion and a dielectric surface portion, wherein exposing the substrate to the adsorbate includes displacing the oxygen-containing substance residing on the silicon surface portion of the substrate.

20. A computer program product comprising: a non-transitory machine-readable medium having a plurality of program modules thereon having instructions recorded thereon, the instructions causing a processor, when read by a processor, to perform the following operations: supporting a substrate in a pre-cleaning module of a semiconductor processing system; exposing the substrate to a pre-cleaning etchant while supported in the pre-cleaning module; transferring the substrate to a deposition module of the semiconductor processing system via a transfer chamber; exposing the substrate to an adsorbate in the deposition module; and depositing a material layer onto the substrate while it is supported in the deposition module after exposing the substrate to the adsorbate.

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