Inspection device and inspection method using the same

Abstract

An inspection device and an inspection method are disclosed. The inspection device includes a stage, a plurality of micro-light-emitting elements disposed on the stage, an electron beam emitting unit configured to emit electron beams to the plurality of micro-light-emitting elements, an optical detection unit configured to detect light emitted from the plurality of micro-light-emitting elements, and an electron beam directing unit disposed between the electron beam emitting unit and the plurality of micro-light-emitting elements.

Description

[Technical Field]

[0001] This invention relates to an inspection device and a method thereof capable of non-contact inspection of the defects of micro light-emitting devices. [Previous Technology]

[0002] Currently commercially available displays are represented by LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diodes). Recently, there has been active development on OLED displays, but OLED displays suffer from short lifespan and poor yield rates in mass production.

[0003] A light-emitting diode (LED) is a type of light-emitting device that emits light when an electric current is applied. LEDs are highly energy-efficient because they can emit light with low voltage. Recently, the brightness of LEDs has been greatly improved, making them suitable for various devices such as backlight units in liquid crystal displays, electroluminescent panels, monitors, and home appliances.

[0004] Light-emitting diodes containing compounds such as GaN and AlGaN have many advantages, such as a wide and easily adjustable bandgap energy, and can therefore be used in a variety of light-emitting devices, light-receiving devices, and various diodes. In particular, they have advantages such as low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness.

[0005] Recently, research has been conducted on a technology for using miniature light-emitting devices, fabricated in a way that miniaturizes light-emitting diodes, as pixels in displays. Regarding such miniature light-emitting devices, since many light-emitting devices are fabricated on a single chip, it is important to accurately inspect whether the light-emitting devices are defective.

[0006] However, devices for inspection that emit light from multiple micro-light-emitting devices in a non-contact manner are not yet commercially available. [Summary of the Invention]

[0007] (The problem to be solved by the invention)

[0008] An embodiment of the present invention provides an inspection device for inspecting micro light-emitting devices by causing them to emit light in a non-contact manner.

[0009] The problem to be solved in the embodiments is not limited to this, and may also include the purpose or effect that can be grasped from the measures or implementation methods used to solve the problem as described below.

[0010] (Measures taken to solve the problem)

[0011] An inspection apparatus according to one aspect of the present invention includes: a stage on which a plurality of micro light-emitting devices are disposed; an electron beam irradiation unit that irradiates the plurality of micro light-emitting devices with an electron beam; a light detection unit that acquires an image of the light emitted from the plurality of micro light-emitting devices; an electron beam induction unit disposed between the electron beam irradiation unit and the plurality of micro light-emitting devices; and a control unit that determines whether the plurality of micro light-emitting devices are defective based on the light image acquired by the light detection unit.

[0012] The electron beam induction section described above may include a plurality of through holes through which the electron beam passes.

[0013] The ratio of the first distance to the second distance (first distance: second distance) can be from 1:0.6 to 1:0.99, wherein the first distance is the distance between the electron beam irradiation part and the micro light-emitting device, and the second distance is the distance between the electron beam irradiation part and the electron beam induction part.

[0014] The electron beam induction unit may include: a first electron beam induction unit disposed between the electron beam irradiation unit and the plurality of micro light-emitting devices; and a second electron beam induction unit disposed between the first electron beam induction unit and the plurality of micro light-emitting devices.

[0015] The electron beam irradiation section described above may include: an electrode layer; a plurality of emitters formed on the electrode layer to emit electrons toward the plurality of micro light-emitting devices; and a gate electrode configured to be spaced apart from the electrode layer, wherein the emitters may include carbon nanotubes.

[0016] The voltage level applied to the electron beam induction section may be higher than the voltage level applied to the gate electrode.

[0017] The above-mentioned multiple micro light-emitting devices may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. When irradiated by an electron beam, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer each emit light.

[0018] The inspection device described above may include a filter that blocks a portion of the light incident on the light detection unit. The filter allows the first light emitted from the active layer to pass through and blocks the second light emitted from the first conductive semiconductor layer or the second conductive semiconductor layer.

[0019] The inspection device described above may include a filter array that blocks a portion of the light incident on the light detection unit. The filter array includes: a first filter that selectively allows light of a first band of all wavelengths of the first light emitted from the active layer of the plurality of micro light-emitting devices to pass through; and a second filter that selectively allows light of a second band of all wavelengths of the first light that is different from the first band to pass through. The first light may be one of blue light, green light, and red light.

[0020] The filter array described above may include a driving unit that selectively configures the first filter and the second filter onto the light detection unit.

[0021] The above-mentioned inspection device may include a vibration unit that applies vibration to the electron beam irradiation section.

[0022] The above-mentioned inspection device may include a moving component that moves the stage or the electron beam induction section. When the stage or the electron beam induction section moves, the micro light-emitting device that overlaps with the electron beam induction section can be exposed to the through hole of the electron beam induction section.

[0023] The above-mentioned inspection device may include: a chamber in which the stage, the electron beam irradiation unit and the electron beam induction unit are disposed; and a vacuum pump that creates a vacuum inside the chamber.

[0024] The above-mentioned inspection device may include: a housing that houses the electron beam irradiation part and the electron beam induction part; and a moving module that moves the housing so that the electron beam emitted from the housing can irradiate only a portion of the plurality of micro light-emitting devices.

[0025] The aforementioned housing can be configured to tilt with reference to an imaginary line perpendicular to the aforementioned stage.

[0026] An inspection method according to one aspect of the present invention includes: a step of forming a vacuum inside a chamber; a step of irradiating a plurality of micro light-emitting devices disposed inside the chamber with an electron beam; a step of measuring the luminous intensity of the plurality of micro light-emitting devices; and a step of determining whether the plurality of micro light-emitting devices are defective, wherein the electron beam is accelerated and injected into the plurality of micro light-emitting devices by an electron beam induction unit disposed between an electron beam irradiation unit and the plurality of micro light-emitting devices.

[0027] (Effects of the invention)

[0028] According to an embodiment of the present invention, an inspection apparatus is provided that performs inspection by causing micro light-emitting devices to emit light in a non-contact manner, thereby improving the inspection speed of multiple micro light-emitting devices and preventing damage to the light-emitting devices.

[0029] The various beneficial advantages and effects of the present invention are not limited to the above-described contents, and will be more easily understood in the process of explaining the specific embodiments of the present invention.

Implementation Method

[0031] The present invention can be implemented with various modifications and can have various embodiments, and therefore specific embodiments are illustrated and described in the accompanying drawings. However, this is not intended to limit the present invention to specific implementations, but should be understood to include all modifications, equivalents or substitutions that fall within the spirit and technical scope of the present invention.

[0032] Terms including ordinal numbers such as "second" and "first" can be used to describe various constituent elements, but the constituent elements are not limited by the terms. The terms are used only for the purpose of distinguishing one constituent element from other constituent elements. For example, without departing from the scope of the invention, a second constituent element can be named a first constituent element, and similarly, a first constituent element can be named a second constituent element. The term "and / or" includes a combination of multiple related described items or one of multiple related described items.

[0033] When referring to a constituent element as being "connected" or "linked" to another constituent element, although it may be directly connected or linked to the other constituent element, it should be understood that there may be other constituent elements between them. Conversely, when referring to a constituent element as being "directly connected" or "directly linked" to another constituent element, it should be understood that there are no other constituent elements between them.

[0034] The terminology used in this application is for illustrative purposes only and is not intended to limit the scope of the invention. Singular expressions include plural expressions unless they have a clearly different meaning in the context. In this application, terms such as "comprising" or "having" are intended to specify the presence of features, numbers, steps, actions, constituent elements, components, or combinations thereof described in the specification, and should be understood not to preclude the presence or additional possibilities of one or more other features or numbers, steps, actions, constituent elements, components, or combinations thereof.

[0035] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art. Terms as defined in commonly used dictionaries shall be interpreted as having a meaning consistent with the meaning of the relevant technical context, and shall not be interpreted as having an ideal or excessive formal meaning unless expressly defined in this application.

[0036] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The same reference numerals will be used for the same or corresponding constituent elements that are not related to the reference numerals in the drawings, and repeated descriptions of them will be omitted.

[0037] FIG1 is a conceptual diagram of an inspection device according to a first embodiment of the present invention.

[0038] Referring to FIG1, the inspection apparatus according to the embodiment includes: a stage 530 on which a plurality of micro light-emitting devices 100 are disposed; an electron beam irradiation unit 200 which irradiates the plurality of micro light-emitting devices 100 with an electron beam; an electron beam induction unit 300 disposed between the electron beam irradiation unit 200 and the plurality of micro light-emitting devices 100; and a chamber 500 in which a vacuum is formed inside.

[0039] The chamber 500 accommodates the stage 530, the electron beam irradiation unit 200 and the electron beam induction unit 300, and forms a vacuum inside, thereby preventing electron beam scattering.

[0040] The chamber 500 can maintain a vacuum of less than 10⁻⁵ Torr and can be used continuously for more than 10,000 hours, but is not necessarily limited to this. It can be adjusted to meet various conditions for irradiating the micro-light-emitting device 100 with an electron beam. A vacuum pump 520 is provided in the chamber 500, thereby enabling the adjustment of the vacuum pressure in the chamber 500.

[0041] A sub-chamber (not shown) for accommodating multiple wafers and a transport component (not shown) for placing the wafers on the stage 530 may be further arranged in the chamber 500.

[0042] The substrate 10, on which multiple micro-light-emitting devices 100 are disposed, can be fixed to the stage 530. The substrate 10 may be a sapphire (Al₂O₃) wafer used as a growth substrate, but is not limited thereto, and may also be a variety of substrates used to dispose of the micro-light-emitting devices 100. For example, the substrate 10 may be a transfer substrate used for transferring the micro-light-emitting devices 100, or it may be a display panel after the transfer is completed.

[0043] The micro-light-emitting device 100 can be a light-emitting diode or an organic light-emitting diode with a size of 1 μm to 200 μm. Examplely, the size of the micro-light-emitting device 100 can be 10 μm to 60 μm, but it is not limited to this; various sizes of light-emitting devices can be used. Examplely, the micro-light-emitting device 100 can be a small-sized light-emitting device of 200 μm to 500 μm, or it can be an RGB light-emitting device of 1000 μm or larger.

[0044] The micro light-emitting device 100 can be one of a blue light-emitting device, a green light-emitting device, and a red light-emitting device. Since the micro light-emitting device 100 performs the function of a pixel of a display, it can be designed to have a certain band of RGB. However, it is not limited to this, and the micro light-emitting device 100 can also be a white light-emitting device.

[0045] The micro-light-emitting device 100 may be a state in which the light-emitting structure is separated into multiple parts on the growth substrate, but it is not necessarily limited to this. It may also be a state in which some semiconductor layers are interconnected. That is, the micro-light-emitting device 100 can be defined as a semiconductor structure in which each active layer is separated and can emit light independently.

[0046] The micro light-emitting device 100 can be grown on a substrate using methods such as metal-organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and sputtering.

[0047] The electron beam irradiation unit 200 may include a first electrode layer 210 and a plurality of emitters 220 formed on the first electrode layer 210 and emitting electrons toward a plurality of micro-light-emitting devices 100. The emitted electrons may move toward the plurality of micro-light-emitting devices. Here, an electron is a negatively charged particle, and an electron beam (electron ray) can be defined as a continuous flow of electrons with kinetic energy and directionality.

[0048] The first electrode layer 210 may contain Al, Ag, Cu, Ti, Pt, Ni, Ir, or Rh, but is not necessarily limited thereto. By way of example, the first electrode layer 210 may also be made of a transparent electrode such as ITO.

[0049] The emitter 220 may include carbon nanotubes (CNTs), but is not limited to them. It can be made of a variety of materials and structures that can emit electrons.

[0050] Of the plurality of carbon nanotubes constituting the emitter 220, at least a portion may have a shape extending in the vertical direction from the first electrode layer 210 toward the stage 530. However, this is not a limitation, and the plurality of carbon nanotubes may also have a shape extending in the horizontal direction.

[0051] Multiple emitters 220 can be uniformly arranged on the first electrode layer 210. Therefore, electrons emitted from the multiple emitters 220 can uniformly irradiate the multiple micro light-emitting devices 100.

[0052] The gate electrode 230 may be configured to be separated from the plurality of emitters 220 by an insulating layer 240. The gate electrode 230 may be configured above the emitters 220, but is not limited thereto, and may be configured at various locations that can form an electric field with the first electrode layer 210.

[0053] The first power supply unit 410 can apply voltage to the first electrode layer 210 and the gate electrode 230. A negative voltage can be applied to the first electrode layer 210 and a positive voltage can be applied to the gate electrode 230.

[0054] The first power supply unit 410 drives a high voltage of 1000V to 3000V with pulses of 1kHz or less. When a high voltage pulse is applied, an electric field can be formed between the first electrode layer 210 and the gate electrode 230. Therefore, electrons emitted from the emitter 220 can move towards the micro-light-emitting device 100. The following describes the case where electrons are accelerated towards the micro-light-emitting device 100 to form an electron beam.

[0055] The electron beam induction section 300 may be disposed between the electron beam irradiation section 200 and the plurality of micro light-emitting devices 100. The electron beam induction section 300 may be a second gate electrode disposed apart from the first electrode layer 210 of the electron beam irradiation section 200 to form an electric field.

[0056] The second power supply unit 420 can apply a positive voltage of 8000V to 12000V to the electron beam induction unit 300 to accelerate the electron beam. The electron beam accelerated by the electron beam induction unit 300 irradiates the multiple micro light-emitting devices 100, thereby enabling the multiple micro light-emitting devices 100 to emit light.

[0057] The electron beam induction section 300 may be configured to be closer to the micro light-emitting device 100 than the electron beam irradiation section 200.

[0058] The ratio of the first distance d1 to the second distance d2 (first distance: second distance) can be from 1:0.6 to 1:0.99, where the first distance d1 is the distance between the electron beam irradiation section 200 and the micro-light-emitting device 100, and the second distance d2 is the distance between the electron beam irradiation section 200 and the electron beam induction section 300. When the distance ratio is less than 1:0.6 (for example, 1:0.4), the distance between the electron beam induction section 300 and the micro-light-emitting device 100 becomes greater, and the electron beam may not be able to be incident on the micro-light-emitting device 100 with sufficient energy. Furthermore, when the distance ratio is greater than 1:0.99, the electron beam induction section 300 is too close to the micro-light-emitting device 100, and therefore, the uniformity of the electron beam decreases.

[0059] The electron beam inducing section 300 may have a plurality of through holes 310 to allow the electron beam to pass through. Examplely, the electron beam inducing section 300 may have a mesh shape. However, it is not limited to this; the electron beam inducing section 300 may have various structures that allow the electron beam to pass through while simultaneously forming an electric field capable of accelerating the electron beam. Examplely, the electron beam inducing section 300 may also be composed of electrodes through which the electron beam can pass.

[0060] The electron beam induction unit 300 or the stage 530 can be moved relative to each other to improve uniformity. The moving component (320 in FIG. 5A) moves the electron beam induction unit 300 left and right, thereby exposing the micro-light-emitting device 100, which is overlapped with and blocked by the electron beam induction unit 300, to the through-hole 310 of the electron beam induction unit 300 so as to receive electron beam irradiation. However, it is not limited to this, the stage 530 can also be moved left and right.

[0061] This electron beam induction unit 300 can have several advantages. According to the embodiment, since the electron beam induction unit 300 is disposed between the electron beam irradiation unit 200 and the micro-light-emitting device 100, it is not necessary to apply voltage to the micro-light-emitting device 100. In terms of a structure that requires connecting the micro-light-emitting device 100 to a power source, the circuit would become very complex since multiple micro-light-emitting devices 100 would need to be connected to a power source separately.

[0062] Furthermore, regarding the configuration of electrodes on the back side of the substrate 10 or the stage 530, a strong electric field cannot be formed, making it difficult to sufficiently accelerate the electron beam. As a result, the electron beam cannot be sufficiently injected into the light-emitting device, thus making it difficult to achieve sufficient luminous intensity even when the device is functioning normally.

[0063] The light detection unit 600 is capable of acquiring light images emitted by multiple micro light-emitting devices 100. The light detection unit 600 may be a camera equipped with a CCD, but is not necessarily limited to this, and can be used without restriction with various imaging devices capable of acquiring light images of the micro light-emitting devices 100.

[0064] The photodetector 600 can be disposed on the window 510 of the chamber 500 to measure the luminous intensity of the plurality of micro light-emitting devices 100. Light emitted from the plurality of micro light-emitting devices 100 can pass through the substrate 10 and be incident on the photodetector 600.

[0065] However, the position of the light detection unit 600 is not limited to this, and it can be varied. For example, the light detection unit 600 and the window 510 can also be arranged on the side of the chamber 500 or at the bottom of the electron beam irradiation unit 200. That is, the light detection unit 600 can be arranged at various positions that can measure the luminous intensity of the micro light-emitting device 100.

[0066] The light detection unit 600 can convert the collected light intensity (spectrum) or wavelength signal into an electrical signal and transmit it to the control unit 700. The control unit 700 may include a main processor that controls the entire inspection device.

[0067] The control unit 700 controls the operation of the electron beam irradiation unit 200, the first power supply unit 410 and the second power supply unit 420, and processes the measurement signal of the photodetector 600 to output mapping data including the evaluation result of the micro light-emitting device 100, and is able to detect defective devices.

[0068] The control unit 700 can be implemented by a memory (not shown) and a processor (not shown). The memory stores various data of algorithms used to control the operation of each component in the inspection device or programs that reproduce the algorithms, and the processor uses the data stored in the memory to perform the aforementioned operations. In this case, the memory and the processor can each be implemented by a separate chip, but are not necessarily limited to this; the memory and the processor can also be implemented by a single chip.

[0069] The control unit 700 may be connected to a storage unit (not shown) that stores processed data. This storage unit may be implemented by at least one of the following storage media: ROM (Read Only Memory), PROM (Programmable ROM), EPROM (Erasable Programmable ROM), EEPROM (Electrically Erasable Programmable ROM), and non-volatile memory devices such as flash memory, or volatile memory devices such as RAM (Random Access Memory), or storage media such as hard disk drive (HDD) and CD-ROM, but is not necessarily limited to these.

[0070] Figure 2 is a diagram showing the state of a light-emitting device emitting light when irradiated by an electron beam, Figure 3 is a diagram showing the principle of a light-emitting device emitting light by means of an electron beam, and Figure 4 is a diagram showing the state of light emitted from a light-emitting device being selectively incident through a filter.

[0071] Referring to Figures 2 and 3, each micro-light-emitting device 100 may include a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130. The first conductive semiconductor layer 110 may be specifically implemented using compound semiconductors of group III-V, group II-VI, etc., and a first dopant may be doped in the first conductive semiconductor layer 110.

[0072] The first conductivity semiconductor layer 110 may be formed from one or more of the following materials: a semiconductor material having the compositional formula Al xIn yGa 1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, but is not limited thereto. When the first dopant is an n-type dopant such as Si, Ge, Sn, Se, or Te, the first conductivity semiconductor layer 110 may be an n-type nitride semiconductor layer.

[0073] The active layer 120 may be disposed on the first conductive semiconductor layer 110. Alternatively, the active layer 120 may be disposed between the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130.

[0074] The active layer 120 is a layer in which electrons (or holes) injected through the first conductive semiconductor layer 110 and holes (or electrons) injected through the second conductive semiconductor layer 130 recombine. The active layer 120 transitions to a lower energy level as electrons and holes recombine, and can generate light with a corresponding wavelength.

[0075] The active layer 120 may have any of the following structures: single-well structure, multi-well structure, single quantum well structure, multi-quantum well (MQW) structure, quantum dot structure, or quantum wire structure. The structure of the active layer 120 is not limited to these. The active layer 120 can generate light in the visible light band.

[0076] The second conductivity semiconductor layer 130 may be disposed on the active layer 120. The second conductivity semiconductor layer 130 may be specifically implemented by a compound semiconductor of group III-V, group II-VI, etc., and a second dopant may be doped in the second conductivity semiconductor layer 130.

[0077] The second conductivity semiconductor layer 130 can be formed from a semiconductor material having the composition In x5Al y2Ga 1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity semiconductor layer 130 doped with the second dopant can be a p-type semiconductor layer.

[0078] Referring to Figures 2 and 3, an electron beam passing through the via 310 of the electron beam induction section 300 can irradiate each semiconductor layer of the micro light-emitting device 100. When the electron beam irradiates the micro light-emitting device 100, the electron beam collides in the semiconductor layer, thereby generating electron-hole pairs. The generated electron-hole pairs can emit visible light through recombination.

[0079] The intensity of visible light emitted from the micro-light-emitting device 100 can be proportional to the intensity (or density) of the electron beam. Therefore, the intensity (or density) of the electron beam can be adjusted to detect the light emitted from the micro-light-emitting device 100 and thus determine whether it is unqualified.

[0080] The micro light-emitting device 100 can be any of the blue, green, and red light-emitting devices. Therefore, the micro light-emitting device 100 can emit light in the blue, green, or red wavelength bands.

[0081] The electron beam injected into the micro light-emitting device 100 can be injected not only into the active layer 120, but also into the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130. Therefore, the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 can also emit light.

[0082] Examplely, when the micro light-emitting device 100 is a blue light-emitting device, the first light L1 in the blue band emitted from the active layer 120 and the second light L2 and L3 in the yellow band emitted from the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 will mix and be emitted to the outside.

[0083] Referring to FIG4, the filter 800 disposed in front of the light detection unit 600 can allow only the first light L1 to pass through and block the second light L2 and L3. Therefore, only the intensity of the first light L1 can be measured, and thus it is possible to accurately determine whether the micro light-emitting device 100 is defective.

[0084] The filter 800 can be a variety of bandpass filters that allow only the wavelength of the first light L1 to pass through. For example, the filter 800 can alternately stack multiple high refractive index layers 801 and multiple low refractive index layers 802 to allow only light of a specific wavelength to pass through, but the structure of the filter 800 is not necessarily limited to this.

[0085] The filter 800 can be selectively applied depending on the inspection method. In inspection methods without a filter, if the object of inspection is a blue micro-device and the intensity of blue and yellow light in the detection wavelength is within a predetermined range, it can be judged as a normal device; if the intensity of blue and yellow light deviates from a predetermined ratio, it can be judged as a defective device. For example, if the intensity of blue light is very low, the micro-light-emitting device can be judged as defective. In cases where defect is judged in this way, the filter can be omitted.

[0086] Since the embodiment is a cathodoluminescence (CL) method that causes the micro light-emitting device 100 to emit light by irradiating an electron beam, it can emit light without damaging the light-emitting device, and multiple micro light-emitting devices can emit light simultaneously by irradiating an electron beam, thus speeding up the inspection.

[0087] A scanning electron microscope (SEM) is a microscope widely used for observing small microstructures and shapes of solids. It has a deep focal depth and is easy to observe three-dimensional images. Therefore, it is an analytical device that can observe complex surface structures or three-dimensional shapes such as crystal shapes at high magnification.

[0088] A scanning electron microscope consists of an electron gun that generates and accelerates an electron beam, a convex lens and an objective lens that focus the electron beam, and a deflection coil that adjusts the path of the electron beam until it reaches the sample after leaving the filament. However, the scanning electron microscope determines the chemical composition by irradiating a local area with an electron beam, which differs from this embodiment where the electron beam is irradiated over a large area.

[0089] A field emission display is a display that uses an array of field emission emitters 220, which serve as a cold cathode electron beam source, arranged in a matrix configuration to emit electron beams onto a phosphor to produce cathode luminescence. However, unlike other displays, a field emission display is not a structure that emits light from a light-emitting diode.

[0090] In addition, the PL (Photoluminescence) method is a method of generating light by injecting light into the sample and using its energy to excite and recombine it. In contrast, the cathodoluminescence (CL) method of the embodiment is a method of generating light by injecting the field-emitted electron beam into the light-emitting diode after it is accelerated by the electric field. The two are different in this respect.

[0091] FIG5A is a diagram showing the grid shape of the electron beam induction section, FIG5B is a diagram showing the cross-sectional shape of the electron beam induction section, FIG5C is a first variation of FIG5A, FIG5D is a second variation of FIG5A, FIG6A is a diagram showing the electron beam irradiation section, and FIG6B is a variation of FIG6A.

[0092] Referring to FIG5A, the electron beam induction section 300 may have a grid shape in which a plurality of through holes 310 are formed on the frame 311. Although the through holes 310 are illustrated as quadrilaterals, the through holes 310 may also have various polygonal or circular shapes.

[0093] In the electron beam induction section 300, the area of ​​the plurality of through holes 310 can be 80% to 95% of the total area. Preferably, the area of ​​the through holes 310 is increased so that the electron beam irradiates the micro light-emitting device 100 uniformly. However, when the area of ​​the through holes 310 is greater than 95%, the area of ​​the electron beam induction section 300 becomes smaller, and thus the effect of accelerating the electron beam may be reduced.

[0094] Referring to FIG5B, the electron beam induction section 300 may have a first surface 300a opposite to the electron beam irradiation section 200 and a second surface 300b opposite to a plurality of micro light-emitting devices, and the second surface 300b may have curvature. Therefore, the area of ​​the second surface 300b may be larger than the area of ​​the first surface 300a.

[0095] According to this configuration, the electron beam passing through the electron beam induction section 300 is bent due to the attraction with the second surface 300b, thus enabling more uniform illumination of the multiple micro-light-emitting devices 100.

[0096] Referring to FIG5C, the electron beam inducing portion 300 may include a plurality of through holes 310 formed by extending elongating in one direction. That is, the electron beam inducing portion 300 may have various shapes besides a grid shape. The area of ​​the electron beam inducing portion 300 may have an area corresponding to the area of ​​the plurality of light-emitting devices 100, but is not necessarily limited thereto. By way of example, as shown in FIG5D, the electron beam inducing portion 300 may also include at least one through hole 310 formed by extending elongating in one direction. That is, the area of ​​one through hole 310 may be larger than the area of ​​one or more light-emitting devices.

[0097] According to the embodiment, it is important that the electron beam can uniformly irradiate the multiple micro-light-emitting devices 100. Therefore, various configurations can be selected for the emitter 220 to emit a uniform electron beam.

[0098] Referring to FIG6A, the first electrode layer 210 is disposed on the support substrate 250, and the emitter 220 can be formed from multiple carbon nanotubes. Multiple carbon nanotubes can be grown directly on the first electrode layer 210, or they can be transferred onto the first electrode layer 210 after growth on another substrate. If the other substrate is a conductive substrate, the conductive substrate itself can also be stacked on the first electrode layer 210.

[0099] Multiple carbon nanotubes may be divided by an insulating layer 240. The gate electrode 230 may be disposed on the upper part of the insulating layer 240, but the position of the gate electrode 230 is not particularly limited.

[0100] Referring to FIG6B, the emitter 220 is formed with a pointed end, and thus can also have a structure that facilitates the emission of electrons. In addition, the configuration of the electron beam irradiation section 200 can also be applied to the configuration of all known emitters that emit electrons.

[0101] Figure 7 is a graph showing the luminous intensity of the measured micro-light-emitting devices, and Figure 8 is a photograph of the measured micro-light-emitting devices.

[0102] Referring to Figures 7 and 8, the control unit can collect the luminous intensity (optical image) of multiple micro-light-emitting devices 100 collected by the photodetector unit to generate mapping data. The control unit can determine that a defective device 101 with a luminous intensity weaker than a predetermined luminous intensity or that does not emit light is defective.

[0103] During the transcription process, only normal devices 102, excluding defective devices 101, can be selectively transcribed. Furthermore, if an inspection is performed after the transcription is completed, defective devices deemed unqualified can be selectively removed or repaired.

[0104] FIG9 is a conceptual diagram of an inspection device according to a second embodiment of the present invention, FIG10 is a conceptual diagram of an inspection device according to a third embodiment of the present invention, FIG11 is a diagram showing a filter array, FIG12 is a diagram showing the state of rotation of the filter array, and FIG13 is a diagram showing the process of filtering wavelengths through the filter.

[0105] Referring to FIG9, the inspection apparatus according to the embodiment has a plurality of electron beam induction units 300 arranged in the vertical direction, thereby enabling effective acceleration of the electron beam. In this case, the voltage level applied to the first electron beam induction unit 301 arranged at the lower part and the voltage level applied to the second electron beam induction unit 302 arranged at the upper part may be different. Examplely, the voltage level applied to the second electron beam induction unit 302 arranged at the upper part may be higher.

[0106] Furthermore, a vibration unit 250 is provided in the electron beam irradiation section 200, thereby enabling vibration to be applied to the electron beam irradiation section 200. Therefore, the direction of the emitted electron beam can be adjusted to further improve the uniformity of the electron beam. Alternatively, vibration can also be applied to the first electron beam induction section 301 and the second electron beam induction section 302.

[0107] The electron beam induction section 300 or the stage 530 can also be moved relative to each other to improve uniformity. The moving component (not shown) moves the electron beam induction section 300 or the stage 530 left and right, thereby exposing the micro light-emitting device 100 that is overlapped with and blocked by the electron beam induction section 300 to the through hole of the electron beam induction section 300 to be irradiated by the electron beam.

[0108] The gate electrode may be omitted from the electron beam irradiation section 200. In this case, an electric field is formed between the first electrode layer 210 and the electron beam induction section 300, which enables electron emission.

[0109] Referring to FIG10, the inspection apparatus according to the embodiment can filter only light of the desired wavelength band emitted from the micro-light-emitting device 100. For example, if the desired peak wavelength in the blue micro-light-emitting device 100 is 423 nm, the first to third filters 810, 820, and 830 can be used to block other wavelength bands of blue light. Therefore, it is possible to filter micro-light-emitting devices 100 having the desired wavelength band.

[0110] Referring to Figures 11 and 12, the filter array PA1 may include: a first filter 810 that selectively allows light of a first band out of all bands of the first light emitted from the active layer of the plurality of micro-light-emitting devices 100 to pass through; a second filter 820 that selectively allows light of a second band different from the first band out of all bands of the first light to pass through; and a third filter 830 that selectively allows light of a third band to pass through. The plurality of filters 810, 820, and 830 may be selectively disposed at the lower part of the light detection unit 600 via the driving unit 840. The first light may be one of the blue, green, and red bands.

[0111] Referring to Figure 13, illustratively, a blue micro-light-emitting device can emit blue light with a peak value in the 440nm to 460nm wavelength range. Although multiple blue micro-light-emitting devices are grown on a single wafer, their main peak values ​​will differ slightly due to slightly different growth conditions. In this case, the emission wavelength of each blue micro-light-emitting device 100 can have a wavelength range of approximately 5nm. That is, the full width at half maximum (FWHM) of the main peak of the blue light emitted from each light-emitting device will be very narrow.

[0112] For example, in the case of 100 blue micro-light-emitting devices, although they all emit blue light, 32 can have a wavelength range of 440nm to 445nm, 38 can have a wavelength range of 446nm to 450nm, and the remaining 30 can have a wavelength range of 451nm to 455nm.

[0113] Therefore, when the first filter 810 is made to have a transmission band CA1 of 440 nm to 445 nm, the first filter 810 can be used to classify only blue micro-light-emitting devices with wavelengths of 440 nm to 445 nm. That is, for devices with wavelengths of 446 nm to 460 nm, although they actually emit blue light, it is blocked by the first filter 810, so the photodetector 600 will detect that they do not emit light.

[0114] When the second filter 820 is made to have a transmission band CA2 of 446 nm to 450 nm, the second filter 820 can be used to classify only the blue micro light-emitting devices 100 with wavelengths of 446 nm to 450 nm.

[0115] Furthermore, if the third filter 830 is made to have a transmission band CA3 of 451 nm to 455 nm, then only blue micro-light-emitting devices 100 with wavelengths of 451 nm to 455 nm can be classified and inspected using the third filter 830. However, the number of filters and the range of transmission bands can be freely modified.

[0116] Therefore, even among multiple blue micro-light-emitting devices 100 grown on a single wafer, devices with the desired blue wavelength can be precisely classified. Since the micro-light-emitting devices 100 are used as pixels of a display, configuring devices with the same peak wavelength in the blue wavelength range is beneficial in terms of color uniformity.

[0117] Alternatively, after sorting out the first to third blue micro-light-emitting devices 100, they can be uniformly mixed and transferred onto the panel. In this case, the first blue micro-light-emitting devices (or the second and third blue micro-light-emitting devices) will not be densely packed in one part, which is beneficial to the color uniformity.

[0118] Although the above description uses blue micro-light-emitting devices as an example, green micro-light-emitting devices and red micro-light-emitting devices can also be classified in the same way.

[0119] FIG14 is a conceptual diagram of an inspection device according to a fourth embodiment of the present invention, FIG15 is a diagram showing a plurality of light-emitting devices connected in part, and FIG16 is a modified example of FIG15.

[0120] Referring to Figures 14 and 15, in the case of multiple micro-light-emitting devices, although the active layer 120 and the second conductive semiconductor layer 130 are separated from each other, the first conductive semiconductor layer 110 can be connected to each other. This light-emitting structure can be in the case where the light-emitting diode fabrication has not yet been completed.

[0121] In this case, by applying a positive voltage to the first conductive semiconductor layer 110 using the third power supply unit 430, the electron beam that has passed through the electron beam induction unit 300 can be further accelerated. At this time, if an electric field is sufficiently formed between the first conductive semiconductor layer 110 and the electron beam irradiation unit 200, the electron beam induction unit 300 can be omitted.

[0122] Referring to FIG16, the multiple micro-light-emitting devices 100 may also be in a state where the transfer to the display panel 20 is completed. Even when the transfer process of the multiple micro-light-emitting devices 100 is completed, it is still necessary to inspect for defective devices before the panel assembly is completed. Since the embodiment can make the micro-light-emitting devices emit light in a non-contact manner, it has the advantage that inspection can be performed even after the transfer to the panel is completed.

[0123] FIG17 is a conceptual diagram of an inspection apparatus according to a fifth embodiment of the present invention, and FIG18A and FIG18B are diagrams showing the process of scanning a line-shaped inspection area.

[0124] Referring to FIG17, the inspection apparatus can perform inspection using an electron beam irradiation module 910. The electron beam irradiation module 910 may include a housing 930 that houses the electron beam irradiation section 200 and the electron beam induction section 300. The electron beam irradiation section 200 and the electron beam induction section 300 may be irradiated with electron beams only to a portion of a plurality of micro-light-emitting devices 100.

[0125] The housing 930 includes a transmission section 920 that irradiates only a portion of the light-emitting device with an electron beam, and is movable in one direction via a moving module 940. With this configuration, the area of ​​the electron beam irradiation section 200 and the electron beam induction section 300 can be reduced, and inspection can be performed regardless of the size of the wafer.

[0126] Referring to Figures 18A and 18B, the electron beam irradiated by the electron beam irradiation module 910 can irradiate in a linear manner and can move in one direction along the irradiation areas SN1 and SN2 in a line scanning manner to continuously cause the micro light-emitting device 100 to emit light. However, it is not limited to this. The electron beam irradiated by the electron beam irradiation module 910 can also irradiate the 1 o'clock region, 5 o'clock region, 7 o'clock region and 11 o'clock region of the substrate 10 in a clockwise or counterclockwise direction in sequence.

[0127] FIG19 is a conceptual diagram of an inspection device according to a sixth embodiment of the present invention.

[0128] Referring to FIG19, the first electron beam irradiation module 910 and the second electron beam irradiation module 910 can be configured to be tilted with reference to a line perpendicular to the stage 530. The electron beam emitted from the first electron beam irradiation module 910 and the electron beam emitted from the second electron beam irradiation module 910 can collectively irradiate the multiple micro-light-emitting devices 100. If the multiple micro-light-emitting devices 100 can be collectively irradiated by the first electron beam irradiation module 910, the second electron beam irradiation module 910 can be omitted.

[0129] According to this configuration, the light detection unit 600 has the advantage of being able to directly capture the light emitted by multiple light-emitting devices. This configuration is suitable for situations where the intensity of light emitted from the light-emitting devices is weak due to the excessive thickness of the substrate 10, or where the substrate 10, such as a display panel substrate or a GaAs substrate, does not transmit light very well.

[0130] The first electron beam irradiation module 910 and / or the second electron beam irradiation module 910 may also irradiate only a portion of the area of ​​the plurality of micro-light-emitting devices. At this time, the stage 530 can move horizontally. Therefore, the plurality of micro-light-emitting devices 100 can emit light sequentially. Therefore, the control unit 700 can analyze the optical image acquired by the photodetector 600 to sequentially detect defective devices. Alternatively, defective devices can also be detected after all scanning is completed.

[0131] FIG20 is a conceptual diagram of an inspection apparatus according to a seventh embodiment of the present invention, FIG21 is a top view of an electron beam induction section, and FIG22 is a diagram showing the state of movement of the electron beam induction section.

[0132] Referring to Figures 20 and 21, the inspection apparatus according to the embodiment includes: a stage 530 on which a plurality of micro light-emitting devices 100 are disposed; an electron beam irradiation unit 200 which irradiates the plurality of micro light-emitting devices 100 with an electron beam; an electron beam induction unit 300 disposed in a portion of the region between the electron beam irradiation unit 200 and the plurality of micro light-emitting devices 100; and a chamber 500 in which a vacuum is formed inside.

[0133] The electron beam induction section 300 may include at least one through hole 310. Although two rectangular through holes 310 are illustrated in the embodiment, the number of through holes 310 may be one or more than three. In addition, the shape of the through hole may also be a variety of shapes other than rectangular (circular, polygonal).

[0134] The electron beam induction unit 300 is disposed in a portion of the area between the electron beam irradiation unit 200 and the plurality of micro light-emitting devices 100, and can be moved in one direction by the moving member 320.

[0135] Referring to FIG22, the electron beam induction unit 300 moves in one direction via the moving member 320, thereby the electron beam can be accelerated sequentially. According to this configuration, when the electron beam is emitted as a whole by the electron beam irradiation unit 200, the electron beam will be accelerated relative to the location where the electron beam induction unit 300 moves.

[0136] That is, since the electron beam is emitted as a whole in the electron beam irradiation section 200, some of the normal light-emitting devices 100 can emit light. However, since the electron beam is not sufficiently accelerated, the emitted light image may be relatively dark. Or, since the electron beam is not effectively incident, some of the normal light-emitting devices 100 may not emit light. Such an optical image will be processed as invalid.

[0137] However, at the location of the electron beam induction section 300, since the sufficiently accelerated electron beam is incident on the light-emitting device, a relatively bright optical image can be detected. Therefore, as the electron beam induction section 300 moves, the electron beam can be accelerated sequentially, and the light emission images in the areas where the electron beam is accelerated can be acquired sequentially to detect normal devices. According to this configuration, it has the advantage of being able to perform inspections without being limited by the substrate area of ​​the micro light-emitting device.

[0138] FIG23 is a flowchart illustrating an inspection method according to an embodiment of the present invention, FIG24A is a diagram showing the state of the electron beam uniformity being measured by the electron beam measuring unit, and FIG24B is a diagram showing the state of the first electrode layer and the electron beam measuring unit being divided into multiple regions.

[0139] Referring to Figures 1 and 23, an inspection method according to an embodiment of the present invention may include: a step of forming a vacuum inside a chamber 500 (S10); a step of irradiating an electron beam onto a micro-light-emitting device 100 disposed inside the chamber 500 (S20); a step of measuring the luminous intensity of the micro-light-emitting device 100 (S30); and a step of determining whether the micro-light-emitting device 100 is unqualified (S40).

[0140] In the step (S10) of forming a vacuum inside the chamber 500, if the micro light-emitting device 100 is disposed inside the chamber 500, the vacuum pump can be turned on to adjust the vacuum inside the chamber 500 to below 10⁻⁵ Torr. If the vacuum inside the chamber 500 is adjusted to below 10⁻⁵ Torr, electron beam scattering can be prevented to form plasma.

[0141] In the step (S20) of irradiating the micro light-emitting device 100 disposed inside the chamber 500 with an electron beam, the electron beam irradiation section 200 is driven with a high voltage of 3000V to 5000V with a pulse of less than 1KHz, and the electron beam induction section 300 is applied with a positive voltage of 8000V to 12000V, thereby accelerating the electron beam.

[0142] If an electron beam irradiates the micro-light-emitting device 100, the electron beam collides in the active layer, thereby generating electron-hole pairs. The generated electron-hole pairs can be bound in the well layer by the blocking layer of the active layer. The bound electrons and holes can emit visible light through recombination.

[0143] The intensity of visible light emitted from the micro-light-emitting device 100 can be proportional to the intensity (or density) of the electron beam. Therefore, the intensity (or density) of the electron beam can be adjusted to detect the light emitted from the micro-light-emitting device 100 and thus determine whether it is unqualified.

[0144] In the step (S30) of measuring the luminous intensity of the micro light-emitting device 100, the light detection unit 600 can acquire images of multiple micro light-emitting devices 100 emitting light. The light detection unit 600 can be a camera, but is not limited to this, and can be used without limitation with various detection devices capable of detecting whether the micro light-emitting device 100 is emitting light.

[0145] The light detection unit 600 can convert the collected light image into an electrical signal and then transmit it to the control unit 700.

[0146] At this time, the filter 800 can also be used to selectively transmit only a portion of the wavelength of the first light emitted from the light-emitting device. For a detailed explanation of this, the descriptions in Figures 10 to 13 can be applied as is.

[0147] In the step (S40) of determining whether the micro light-emitting device 100 is unqualified, the light emitted from each micro light-emitting device 100 can be detected and the micro light-emitting device 100 that emits light below a specified reference intensity can be determined as unqualified.

[0148] According to the embodiment, between the step of forming a vacuum (S10) and the step of irradiating an electron beam (S20), the following steps may be included: measuring the electron beam intensity in a plurality of irradiation regions of an electron beam irradiation unit 200 disposed inside the chamber 500; and adjusting the electron beam intensity in an irradiation region that is outside a predetermined intensity range among the plurality of irradiation regions.

[0149] Referring to Figures 24A and 24B, in the step of measuring the electron beam intensity, the electron beam measuring unit 30 can first measure the uniformity of the electron beam before irradiating the micro-light-emitting device 100 with the electron beam. The electron beam measuring unit 30 can be arranged between the electron beam irradiation unit 200 and the stage 530 when the measurement is performed by the driving unit (not shown), and can be disengaged from the electron beam irradiation unit 200 and the stage 530 once the measurement is completed.

[0150] The electron beam measuring unit 30 can be divided into multiple sensing regions P1 to P24. The multiple sensing regions P1 to P24 can be configured to match each other with multiple irradiation regions S1 to S24. Therefore, the electron beam inhomogeneity of which irradiation region can be determined by using the values ​​measured in the multiple sensing regions P1 to P24.

[0151] In the step of adjusting the electron beam intensity, locations where the electron beam intensity is relatively uneven can be detected and adjusted so that the electron beam intensity in the corresponding area matches a predetermined reference range (or average intensity).

[0152] For example, the voltage level of the irradiated area can be increased for locations where the electron beam intensity is weak, and the voltage level of the irradiated area can be decreased for locations where the electron beam intensity is strong.

[0153] Although the above description focuses on embodiments, it is merely illustrative and does not limit the invention. Those skilled in the art will understand that various modifications and applications not illustrated above can be made without departing from the essential characteristics of the embodiments. For example, the constituent elements specifically shown in the embodiments can be implemented through modifications. Moreover, differences related to these modifications and applications should be interpreted as being included within the scope of the invention as defined in the appended claims. [Simplified Explanation of the Diagram]

[0030] FIG1 is a conceptual diagram of an inspection apparatus according to a first embodiment of the present invention. FIG2 is a diagram showing the state in which a light-emitting device emits light due to irradiation by an electron beam. FIG3 is a diagram showing the principle of light emission by means of an electron beam. FIG4 is a diagram showing the state in which light emitted from a light-emitting device is selectively incident through a filter. FIG5A is a diagram showing the grid shape of an electron beam induction section. FIG5B is a diagram showing the cross-sectional shape of an electron beam induction section. FIG5C is a first variation of FIG5A. FIG5D is a second variation of FIG5A. FIG6A is a diagram showing an electron beam irradiation section. FIG6B is a variation of FIG6A. FIG7 is a diagram showing the luminous intensity of a plurality of micro light-emitting devices measured. FIG8 is a photograph of a plurality of micro light-emitting devices measured. FIG9 is a conceptual diagram of an inspection apparatus according to a second embodiment of the present invention. FIG10 is a conceptual diagram of an inspection apparatus according to a third embodiment of the present invention. FIG11 is a diagram showing a filter array. FIG12 is a diagram showing the state in which the filter array is rotated. FIG13 is a diagram showing the process of filtering wavelengths through a filter. Figure 14 is a conceptual diagram of an inspection apparatus according to a fourth embodiment of the present invention. Figure 15 is a diagram showing a plurality of light-emitting devices partially connected. Figure 16 is a variation of Figure 15. Figure 17 is a conceptual diagram of an inspection apparatus according to a fifth embodiment of the present invention. Figures 18A and 18B are diagrams showing the process of scanning a linear inspection area. Figure 19 is a conceptual diagram of an inspection apparatus according to a sixth embodiment of the present invention. Figure 20 is a conceptual diagram of an inspection apparatus according to a seventh embodiment of the present invention. Figure 21 is a top view of an electron beam induction section. Figure 22 is a diagram showing the state of movement of the electron beam induction section. Figure 23 is a flowchart showing an inspection method according to an embodiment of the present invention. Figure 24A is a diagram showing the state of the electron beam uniformity being measured by the electron beam measurement section. Figure 24B is a diagram showing the state of the first electrode layer and the electron beam measurement section being divided into multiple regions.

Claims

1. An inspection device, comprising: A stage on which multiple micro-light-emitting devices are configured; An electron beam irradiation unit irradiates the plurality of micro light-emitting devices with an electron beam; a light detection unit acquires an image of the light emitted from the plurality of micro light-emitting devices; an electron beam induction unit is disposed between the electron beam irradiation unit and the plurality of micro light-emitting devices; and a control unit determines whether the plurality of micro light-emitting devices are defective based on the light image acquired by the light detection unit.

2. The inspection apparatus as claimed in claim 1, wherein, The electron beam induction section includes at least one through-hole through which the electron beam passes.

3. The inspection apparatus as described in claim 2, wherein, The electron beam induction section has a grid shape.

4. The inspection apparatus as described in claim 2, wherein, At least one through-hole in the electron beam induction section is formed to extend long in one direction.

5. The inspection apparatus as described in claim 2, wherein, The electron beam induction unit has an area corresponding to a portion of the stage, and the electron beam induction unit moves in one direction between the stage and the electron beam irradiation unit.

6. The inspection apparatus as claimed in claim 1, wherein, The ratio of the first distance to the second distance is 1:0.6 to 1:0.99, wherein the first distance is the distance between the electron beam irradiation part and the micro light-emitting device, and the second distance is the distance between the electron beam irradiation part and the electron beam induction part.

7. The inspection apparatus as claimed in claim 1, wherein, The electron beam induction section includes: a first electron beam induction section disposed between the electron beam irradiation section and a plurality of micro light-emitting devices; and a second electron beam induction section disposed between the first electron beam induction section and the plurality of micro light-emitting devices.

8. The inspection apparatus as claimed in claim 1, wherein, The electron beam irradiation section includes: an electrode layer; a plurality of emitters formed on the electrode layer to emit electrons toward the plurality of micro-light-emitting devices; and a gate electrode configured to be spaced apart from the electrode layer, the emitters including carbon nanotubes.

9. The inspection apparatus as claimed in claim 8, wherein, The voltage level applied to the electron beam induction section is higher than the voltage level applied to the gate electrode.

10. The inspection apparatus as claimed in claim 1, wherein, The plurality of micro light-emitting devices include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. When irradiated by an electron beam, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer each emit light.

11. The inspection apparatus as claimed in claim 10, wherein, It includes a filter that blocks a portion of the light incident on the light detection unit. The filter allows first light emitted from the active layer to pass through and blocks second light emitted from the first conductive semiconductor layer or the second conductive semiconductor layer.

12. The inspection apparatus as claimed in claim 10, wherein, The device includes a filter array that blocks a portion of the light incident on the light detection unit. The filter array includes: a first filter that selectively allows light of a first band of all wavelengths of the first light emitted from the active layer of the plurality of micro-light-emitting devices to pass through; and a second filter that selectively allows light of a second band of all wavelengths of the first light that is different from the first band to pass through. The first light is one of blue light, green light, and red light.

13. The inspection apparatus as claimed in claim 12, wherein, The filter array includes a drive unit that selectively configures the first filter and the second filter onto the photodetector.

14. The inspection apparatus as claimed in claim 1, wherein, This includes a vibration unit that applies vibration to the electron beam irradiation section.

15. The inspection apparatus as claimed in claim 2, wherein, The stage or the electron beam induction section moves in one direction, thereby exposing the micro light-emitting device overlapping with the electron beam induction section to the through-hole of the electron beam induction section.

16. The inspection apparatus as claimed in claim 1, wherein, include: The chamber contains the stage, the electron beam irradiation unit, and the electron beam induction unit. And a vacuum pump, which creates a vacuum inside the chamber.

17. The inspection apparatus as claimed in claim 1, wherein, include: A housing that houses the electron beam irradiation unit and the electron beam induction unit; And a moving module that moves the housing so that the electron beam emitted from the housing only irradiates a portion of the plurality of micro light-emitting devices, and the irradiated area of ​​the electron beam is moved in one direction by the moving module.

18. The inspection apparatus as claimed in claim 17, wherein, The housing is configured to tilt with reference to an imaginary line perpendicular to the stage.

19. An inspection method, comprising: The step of creating a vacuum inside the chamber; The step of irradiating an electron beam onto multiple micro-light-emitting devices disposed inside the cavity; The steps include measuring the luminous intensity of the plurality of micro-light-emitting devices and determining whether the plurality of micro-light-emitting devices are defective. The electron beam is accelerated and injected into the plurality of micro-light-emitting devices by an electron beam induction unit disposed between the electron beam irradiation unit and the plurality of micro-light-emitting devices.

20. The inspection method as described in claim 19, wherein, In the step of measuring the luminescence intensity, a portion of the wavelengths of the first light emitted from the active layer of the plurality of micro-light-emitting devices are selectively transmitted.

Images