Crystalline oxide semiconductor thin films and sputtering targets
TW202627137APending Publication Date: 2026-07-01KOBELCO RES INST INC
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Patent Information
- Application Number
- TW115107414
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-11-08
- Filing Date
- 2025-01-21
- Publication Date
- 2026-07-01
Abstract
The crystalline oxide semiconductor thin film disclosed herein contains In and B elements, wherein the ratio of the In content (atomic %) to the B content (atomic %) satisfies the following formula 1, and the average grain size on the surface observed by electron microscopy is 0.25 μm or more. B / (In+B)≤0.20 ····(1)
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