Automated silicon photonics bonding interface enhancement

Abstract

A silicon photonic device includes a substrate formed from a silicon-containing material and patterned to comprise a first waveguide and a second waveguide defining a first trench extending between the first waveguide and the second waveguide. The first waveguide and second waveguide have upper surfaces exposed for bonding to an epitaxially grown layer. The first trench being exposed to the epitaxially grown layer. A support structure is formed within the first trench and extends upward to an upper surface at a height of the upper surfaces of the first waveguide and second waveguide. The support structure is optically non-functional.