System and method for an extended buried oxide layer for silicon photonic integrated circuits

Abstract

A device and method of manufacturing a semiconductor device with integrated photonic and electronic components is described. The method may include: providing a silicon-on-insulator (SOI) wafer having a silicon handle wafer, a buried oxide (BOX) layer, and a silicon waveguide layer; forming a photonic integrated circuit (PIC) including one or more of the waveguide or a metal layer; removing the silicon wafer to expose the BOX layer; and extending the BOX layer by one or more of: depositing oxide and planarizing onto the BOX layer to increase BOX layer thickness to an extended BOX layer, or fusion bonding a second wafer with a surface oxide layer. The device may include a photonic integrated circuit (PIC), an additional oxide layer, and an integrated optical component positioned to reflect or reshape optical signals within a waveguide layer vertically.