Semiconductor devices

Abstract

A semiconductor device includes a bit line structure, first and second gate structures and a channel. The bit line structure extends in a first direction. The first gate structure includes a first gate electrode extending in a second direction, a gate barrier pattern on the first gate electrode, a capping pattern on the gate barrier pattern, and a first gate insulation pattern on the bit line structure. The first gate insulation pattern is on sidewalls of the first gate electrode, the gate barrier pattern and the capping pattern. The channel extends in a third direction on a sidewall of the first gate structure. The second gate structure includes a second gate insulation pattern and a second gate electrode on the bit line structure. The second gate insulation pattern is on a sidewall of the channel. The second gate electrode is on a sidewall of the second gate insulation pattern.