Semiconductor device and method for preparing the same

Abstract

The present disclosure provides a semiconductor device including a source / drain structure, a dielectric layer, first contact structures, a polysilicon stack, and a second contact structure. The source / drain structure is disposed over a semiconductor substrate. The dielectric layer is disposed over the source / drain structure. The first contact structures penetrate through the dielectric layer and the source / drain structure. The second contact structure is disposed over the polysilicon stack. The polysilicon stack and the second contact structure are disposed between two of the plurality of first contact structures. Each of the first contact structures includes a first liner and a first conductive layer surrounding by the first liner.