Semiconductor device including double side word line and method of manufacturing the same

Abstract

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a first word line, a second word line, and a channel layer. The bit line is disposed on the substrate and extends along a first direction. The first word line is disposed on the substrate and extends along a second direction substantially perpendicular to the first direction. The second word line is disposed on the substrate and extending along the second direction. The channel layer is disposed between the first word line and the second word line and extending along the second direction.