Stacked semiconductor device and method of manufacturing the stacked semiconductor device

Abstract

Provided is a stacked semiconductor device which includes: a substrate; a 1st source / drain region on the substrate; and a 2nd source / drain region vertically above the 1st source / drain region, the 2nd source / drain region vertically overlapping a 1st portion, among the 1st portion and a 2nd portion, of the 1st source / drain region, wherein a 1st portion of a top surface of the substrate vertically below the 1st portion of the 1st source / drain region and a 2nd portion of the top surface of the substrate vertically below the 2nd portion of the 1st source / drain region are coplanar or aligned.