Memory device

Abstract

This invention relates to a memory device. The memory device of this embodiment includes a memory cell comprising a switching layer between a first conductive layer and a third conductive layer, and a resistance-changing layer between the third conductive layer and a second conductive layer. The switching layer comprises: a first oxide selected from Mg, Y, La, Ce, Zr, Hf, Al, Ti, and Si; a second element selected from Zn, Ga, In, Sn, and Bi; a third element selected from P, As, Sb, Bi, S, Se, and Te; and a fourth element selected from the group consisting of V, Nb, Ta, Cr, B, Ga, and Si. The switching layer includes a first region, a second region, and a third region, with the first region disposed between the second and third regions. The first region contains the first oxide, and the second and third regions contain a fourth oxide of the fourth element.