Semiconductor structure and method for forming the same

Abstract

A method includes: providing a plurality of fins that extend vertically above a substrate and a contiguous gate structure that extends over the plurality of fins; forming an opening in the contiguous gate structure with a metal gate cut between a pair of fins, wherein forming the opening includes etching a partial opening to a current depth and performing an etching cycle including: depositing a protective layer on sidewalls of the partial opening; and extending, via etching, the partial opening a predetermined incremental depth below the current depth; and repeating the etching cycle for at least 10 cycles to achieve a desired gate cut length.