Manufacturing method of semiconductor device

Abstract

A manufacturing method of a semiconductor device comprises : preparing a semiconductor stacked body including a sacrificial layer stacked above a substrate, a first barrier layer stacked on the sacrificial layer and having a lower etching rate with respect to a predetermined etchant than an etching rate of the sacrificial layer, and a semiconductor layer stacked on the first barrier layer and having a first surface on the substrate side, the first surface of the semiconductor layer being in contact with first barrier layer, making the first surface of the semiconductor layer smaller than a surface of the first barrier layer in contact with the first surface, forming a protection film so as to cover the semiconductor layer except for the first surface after the first surface is made smaller, the protection film having resistivity to the predetermined etchant for removing the sacrificial layer, removing the sacrificial layer using the predetermined etchant after the protection film is formed, and separating the semiconductor layer from the substrate.