Method of forming semiconductor structure and device structure

Abstract

A semiconductor structure may be provided by: forming a semiconductor device in an upper portion of a substrate; forming through-substrate via structures in the upper portion of the substrate; thinning the substrate by removing material portions of the substrate from a backside, whereby backside end surfaces of the through-substrate via structures are exposed; forming at least one backside isolation layer by implanting ions of at least one non-electrical dopant element into a backside portion of the substrate; and forming backside bump structures on the backside end surfaces of the through-substrate via structures.