Glass interposer with through glass via and method for fabricating the same
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- E&R ENG CORP
- Filing Date
- 2025-01-13
- Publication Date
- 2026-07-16
Smart Images

Figure TWG2TA001068025_001 
Figure TWG2TA001068025_002 
Figure TWG2TA001068025_003
Abstract
Claims
1. A method for manufacturing a glass interposer with conductive holes, comprising: providing a glass substrate having a first surface and a second surface opposite to each other, wherein, A first support member is attached to the second surface of the glass substrate without a through-hole to support the glass substrate; a through-hole is formed in the glass substrate with the first support member attached, wherein the through-hole forms a first opening and a second opening on the first surface and the second surface, respectively; a sublayer is formed on the inner wall surface of the through-hole and the first surface of the glass substrate; a second support member is attached to the first surface of the glass substrate and the first support member is removed; an electroplating voltage is applied to the seed layer of the glass substrate to electroplat the through-hole to deposit metal material inside it to form a conductive pillar; the second support member is removed to expose the first surface of the glass substrate.
2. The method for manufacturing a glass interlayer with conductive holes as described in claim 1, wherein, In the step of providing the glass substrate, the thickness of the glass substrate is less than 100 μm.
3. The method for manufacturing a glass interlayer with conductive holes as described in claim 1, wherein, In the step of forming the through hole, a laser modification and etching process is performed on the first surface of the glass substrate to form the through hole extending from the first surface to the second surface, wherein the diameter of the first opening is larger than the diameter of the second opening.
4. The method for manufacturing a glass interlayer with conductive holes as described in claim 1, wherein, In the step of forming the seed layer, a metallic material is deposited by physical vapor deposition to form the seed layer.
5. The method for manufacturing a glass interlayer with conductive holes as described in claim 1, wherein, In the step of electroplating the through hole to deposit metal material inside it to form the conductive pillar, the metal material completely fills the through hole; the two ends of the conductive pillar are flush with the first surface and the second surface, respectively.
6. The method for manufacturing a glass interlayer with conductive holes as described in claim 1, wherein, The first carrier is attached to the second surface of the glass substrate through an adhesive layer; the second carrier is attached to the first surface of the glass substrate through another adhesive layer.
7. The method for manufacturing a glass interlayer with conductive holes as described in claim 6, wherein, In the step of removing the first carrier, a laser beam is used to irradiate the first carrier to separate it from the adhesive layer, and then plasma is used to remove the remaining adhesive layer on the second surface; In the step of removing the second carrier, a laser beam is used to irradiate the second carrier to separate it from the adhesive layer, and then plasma is used to remove the remaining adhesive layer on the first surface.
8. A method for manufacturing a glass interlayer with conductive holes as described in claim 1, wherein, After removing the second carrier, the process further includes: removing the seed layer on the first surface of the glass substrate.
9. A glass interlayer with conductive holes, manufactured using the method for manufacturing a glass interlayer with conductive holes as described in any one of claims 1 to 8.