Epi chamber with full wafer laser heating
TW202629335APending Publication Date: 2026-07-16APPLIED MATERIALS INC
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2021-09-02
- Publication Date
- 2026-07-16
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Abstract
An apparatus for heating a substrate within a thermal processing chamber is disclosed. The apparatus includes a chamber body, a gas inlet, a gas outlet, an upper window, a lower window, a substrate support, and an upper heating device. The upper heating device is a laser heating device and includes one or more laser assemblies. The laser assemblies include light sources, a cooling plate, optical fibers, and irradiation windows.
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