A photoresist stripping liquid capable of protecting gaas and pi substrates and application thereof

Abstract

This invention belongs to the field of photoresist stripping technology after etching in semiconductor manufacturing processes, and particularly relates to a photoresist stripping solution capable of protecting GaAs and PI substrates and its application. The photoresist stripping solution provided by this invention comprises a cyclic organic amine, an alcohol ether organic solvent, a diol, and an azole corrosion inhibitor; the cyclic organic amine has the chemical formula shown in formula (I), where R1 and R2 are independently -H, -CH3, -NH2, -C6H5, -CH3C6H5, -CH3CH2OH, or -CH3CH2NH2, and R3 is -H or -CH3; the diol is an aliphatic diol containing 2 to 6 carbon atoms; the photoresist stripping solution does not contain any of the following: water, aprotic polar solvents, oxidants, halogen compounds, hydroxylamine, quaternary ammonium bases, and inorganic bases. The photoresist stripping solution provided by this invention does not corrode GaAs and PI substrates and has excellent photoresist dissolving ability.