Gas control system for semiconductor apparatus

Abstract

A gas control system comprises a first processing chamber where the first semiconductor process is performed, a first discharge pipe connected to the first process chamber and through which a gas used in the first semiconductor process is discharged, a first inlet pipe connected to the first discharge pipe, an energy loss member connected to the first inlet pipe to lose energy of the gas provided through the first inlet pipe, a sub-pipe through which the gas passing through the energy loss member is discharged, a main pipe connected to the sub pipe, a first energy adjustment member disposed in the first inlet pipe to control a first energy of the gas passing through the first inlet pipe, and a second energy adjustment member disposed in the sub-pipe to control a second energy of the gas passing through the sub-pipe, wherein the gas is provided to the energy loss member through the first discharge pipe and the first inlet pipe, and then the gas is discharged to the outside through the sub-pipe and the main pipe, and the first energy of the gas in the first inlet pipe is controlled to a predetermined value by the first energy control member, and the second energy of the gas in the sub-pipe is controlled to a predetermined value by the second energy control member.

Images