Silicon (110) substrate and processing method of silicon (110) substrate

Abstract

This invention relates to a silicon (110) substrate, characterized in that the silicon (110) substrate has an off-angle greater than 0.23° and less than 0.5°, and the silicon (110) substrate is an annealed substrate subjected to heat treatment at 1000°C or higher with a doping concentration of 1E16 atoms / cm3 or less, and no protrusion defects are detected. Therefore, this invention provides a silicon (110) substrate and a method for processing the silicon (110) substrate to suppress the generation of minute protrusion defects. none

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