Method for manufacturing silicon carbide substrates and silicon carbide substrates with growth layers

Abstract

The present invention addresses the problem of providing a novel method for manufacturing a silicon carbide substrate to suppress warping of the substrate. The method comprises: a first processing step, which includes: a first thermal etching step, wherein a silicon carbide substrate having a first surface and a second surface opposite to the first surface is heated and thermally etched onto either the first surface or the second surface; and a first growth step, wherein a silicon carbide growth layer is formed on the other surface; and a second processing step, which includes: a second growth step, wherein a silicon carbide growth layer is formed on the surface thermally etched in the first thermal etching step; and a second thermal etching step, wherein the surface on which the silicon carbide growth layer was formed in the first growth step is thermally etched.