Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat

TW202630462APending Publication Date: 2026-07-16ASM IP HLDG BV
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
ASM IP HLDG BV
Filing Date
2021-10-07
Publication Date
2026-07-16

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Abstract

Examples of a method of manufacturing a semiconductor device includes, in treatment of a substrate with the use of a plasma, acquiring an RF waveform from a reactor through an Ether CAT in real time, the RF waveform being a waveform relating to an electric power to be applied to an RF plate, and adjusting, by using the RF waveform, the electric power to be applied to the RF plate.
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