Electrostatic discharge protection circuit and control system

Abstract

An　electrostatic discharge (ESD) protection circuit coupled between a first transmission line and a second transmission line and including a depletion-type transistor and an ESD device is provided. The drain of the depletion-type transistor is coupled to the first transmission line. The gate of the depletion-type transistor is coupled to the second transmission line. The ESD device is coupled between the source of the depletion-type transistor and the second transmission line and comprises a PN junction. When an ESD event occurs on the first transmission line and the second transmission line receives a ground voltage, an ESD current passes through the depletion-type transistor and enters the ESD device. When the source voltage of the depletion-type transistor is larger than the reverse breakdown voltage of the PN junction, the ESD current passes through the PN junction and enters the second transmission line.

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