Non-volatile memory device having vertical channels and methods of fabrication thereof

Abstract

Semiconductor devices and methods of manufacturing the same are provided. The semiconductor devices may include a non-volatile memory (NVM) transistor form over a substrate having a buried lower source / drain (S / D) junction, an upper S / D junction, a vertical channel having a cylindrical shape disposed between the upper and lower S / D junctions, a cylindrical memory film stack surrounding the vertical channel, and a gate layer disposed around the memory film stack. The semiconductor devices may also include word lines surrounding the vertical channels, bit lines and source lines connecting multiple NVM transistors. Other embodiments are also described.

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