Manufacturing method of semiconductor device

Abstract

Provided are semiconductor structures and methods for fabricating semiconductor structures. A method includes in a first device region and in a second device region: forming a stack of first epitaxial layers and second epitaxial layers; forming a sacrificial gate over the stack; etching the stack to form a cavity having a bottom surface; removing the first epitaxial layers to form gaps; and depositing an interposer material over the bottom surface and in the gaps; in the first device region: performing an anisotropic etch of the interposer material located over the bottom surface; and in the first device region and in the second device region: performing an isotropic etch of the interposer material to remove the interposer material located over the bottom surface and to laterally recess the interposer material in the gaps.

Images