Nanostructure field-effect transistor devices and methods of forming

Abstract

A dielectric layer is formed at a bottom of a source / drain opening for a p-type source / drain region of a nanostructure field-effect transistor (NSFET) device. Next, a source / drain region with a multi-layered structure is formed in the source / drain opening over the dielectric layer. Forming the source / drain region includes forming a first epitaxial material in the source / drain opening, the first epitaxial material including discrete portions disposed along sidewalls of a channel material of the NSFET device exposed to the source / drain opening. A second epitaxial material is then formed on the first epitaxial material and partially fills the source / drain opening. The second epitaxial material may extend continuously from a first discrete portion of the first epitaxial material to a second discrete portion of the first epitaxial material.