Oxide semiconductor films and thin film transistors

Abstract

The purpose of this disclosure is to provide a crystalline oxide semiconductor film with high carrier mobility. An example oxide semiconductor film of this disclosure is disposed on a substrate. The oxide semiconductor film contains In as an element and has a grain boundary line density of less than 27 / μm. The grain boundary line density is a value obtained using EBSD analysis, defining boundaries with an orientation difference of 2° or more as grain boundaries.

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