Semiconductor die including a transistor coupled to a contact layer wherein the contact layer includes a metal contact having a sidewall with a reduced height to promote connectivity with an adjacent via

Abstract

Aspects disclosed include a semiconductor die including a transistor coupled to a contact layer wherein the contact layer includes a metal contact having a sidewall with a reduced height to promote connectivity with an adjacent via. The die comprises the contact layer adjacent to an epitaxial layer of the transistor. The contact layer comprises a metal contact adjacent to the epitaxial layer and having a first height. The metal contact comprises a plurality of sidewalls wherein at least one of the plurality of sidewalls has a second height which is less than the first height resulting in increased metal at a surface of the metal contact. The die further comprising a via layer adjacent to the contact layer. The via layer comprising a via adjacent to the surface of the metal contact increasing the connectivity between the via and the metal contact.