Semiconductor structure and methods of forming the same

Abstract

This disclosure is directed to a structure of a semiconductor device and a method of forming the structure. The structure includes a fin structure on a substrate. The fin structure includes channel layers. The structure further includes a gate structure surrounding each of the channel layers, a source / drain (S / D) region adjacent to the fin structure and in contact with the channel layers, an insulating layer adjacent to the S / D region, and a dielectric layer on the S / D region and the insulating layer. The structure further includes an S / D contact structure through the dielectric layer and in contact with the S / D region and the insulating layer. A bottom surface of the S / D contact structure is below a top surface of a bottommost channel layer of the channel layers.