Semiconductor device and method of manufacturing the same

Abstract

A semiconductor substrate includes a p-type substrate region, an n-type buried layer on the p-type substrate region, and a p-type semiconductor layer on the n-type buried layer. A DTI region is formed in a trench that penetrates through the p-type semiconductor layer and the n-type buried layer, reaching the p-type substrate region. A plurality of scallops are formed at a side surface of the trench. A size of each of a plurality of first scallops formed at the side surface of the trench in the p-type semiconductor layer is larger than a size of each of a plurality of second scallops formed at the side surface of the trench in the n-type buried layer.