Annealed transistor and method for annealing a field-effect transistor

Abstract

A method of forming a transistor includes providing a substrate with a silicon dioxide layer disposed thereon and a gate electrode on the silicon dioxide layer. A thin-film oxide layer is formed on the gate electrode and the silicon dioxide layer. The thin-film oxide layer is annealed by applying plasma generated from diatomic oxygen using an oxygen source. This plasma annealing process modifies the thin-film oxide layer, enhancing its dielectric properties and interface quality with the channel layer. The method results in various types of transistors, including thin-film transistors, amorphous oxide semiconductor transistors, and ferroelectric field-effect transistors, which can be configured as switches, amplifiers, or memory devices.

Images