Semiconductor memory device

Abstract

A semiconductor memory device includes a memory cell structure which includes a channel pattern, a bit line connected to a first portion of the channel pattern, a data storage structure connected to a second portion of the channel pattern, and a word line intersecting the channel pattern between the first portion and the second portion, a substrate which faces the memory cell structure in a first direction, the substrate including a first region and a second region different from each other, a first insulation pattern which defines an active region inside the first region, an active pattern which protrudes from the active region, a gate structure which intersects the active pattern, on the active pattern, a second insulation pattern inside the second region, and a through via which extends in the first direction and penetrates the second insulation pattern.

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