Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes an active area and a junction termination area, each including a drain electrode, a first epitaxial layer of a first conductivity type disposed on the drain electrode, and a second epitaxial layer of the first conductivity type disposed on the first epitaxial layer. The junction termination area further includes a first junction termination area etched on a portion of the second epitaxial layer , and a second junction termination area that is not etched. A field oxide layer is disposed on a portion of the first junction termination area. A doped region of a second conductivity type is disposed to extend from beneath the field oxide layer to the second junction termination area.