Photocathode device for sub-nanosecond gating and method for the manufacturing thereof, and visible light detection device
TW202630817APending Publication Date: 2026-07-16PHOTONIS NETHERLANDS
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- PHOTONIS NETHERLANDS
- Filing Date
- 2025-11-14
- Publication Date
- 2026-07-16
Smart Images

Figure TWG2TA001069040_001 
Figure TWG2TA001069040_002
Abstract
Photocathode device for sub-nanosecond gating comprising an active photo-emissions region surrounded by an electrode region, the device comprising: - a substrate; - a photocathode layer deposited on the substrate; wherein the device also comprises: - a conductive underlayer deposited between the substrate and the photocathode layer in the active photo-emission region and preferably in the electrode region; - a layer of aluminium oxide deposited between the conductive underlayer and the photocathode layer. Method of manufacturing of the photocathode device, and visible light detection device comprising the photocathode device.
Need to check novelty before this filing date? Find Prior Art