Optoelectronic, thermoelectric, photonic, materials and devices, fabricated on the back side surface of CMOS wafers

Abstract

A CMOS-integrated optoelectronic and / or thermoelectric device includes a CMOS silicon wafer having a front side and a back side, at least one CMOS device fabricated on the front side of the CMOS silicon wafer, at least one optoelectronic and / or thermoelectric device monolithically integrated on the back side of the CMOS silicon wafer, and at least one electrical connecting region electrically coupling the at least one optoelectronic and / or thermoelectric device and the at least one CMOS device. The at least one optoelectronic and / or thermoelectric device includes at least one heterojunction epitaxial layer. The at least one heterojunction epitaxial layer is pseudomorphically grown and strained to one or more crystallographic orientations of silicon.