Integrated device and method of forming the same
TW202630828APending Publication Date: 2026-07-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114108391
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-13
- Filing Date
- 2025-03-06
- Publication Date
- 2026-07-16
Abstract
Some embodiments relate to an integrated device, including: a substrate having a first refractive index, a first side, a second side, and a first and second region extending between the first side and the second side; a lower insulative grid structure within the substrate, the lower insulative grid structure having a first plurality of insulative segments arranged in a grid pattern and having a second refractive index, and extending between the first region of the substrate and the second region of the substrate; an upper insulative grid structure overlying the lower grid structure and comprising a second plurality of insulative segments that have outer sidewalls that are substantially aligned with outer sidewalls of the first plurality of insulative segments, the second plurality of insulative segments having a third refractive index that is greater than the second refractive index and lower than the first refractive index.
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