Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device is provided, including an epitaxial structure, a first electrode and a second electrode. The epitaxial structure includes adjacent first and second parts. The first part includes a first semiconductor structure and an active region, and has a first upper surface and a first side surface. The second part includes a second semiconductor structure and has a first bottom surface and a second side surface. The active region is located between the first semiconductor structure and the second semiconductor structure. The first electrode covers the first bottom surface. The second electrode covers the first upper surface. In a cross-sectional view, the first side surface is directly connected to the second side surface, and a ratio of the maximum width of the active region to the maximum width of the second part is in a range of

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