Process for producing a carrier substrate, and carrier substrate

Abstract

The invention relates to a process for producing a carrier substrate, comprising the following steps: - providing a temporary substrate formed of a first material and comprising a first face, a second face opposite the first face and a lateral surface connecting the first and second faces; - depositing on the temporary substrate a support semiconductor layer made of polycrystalline silicon carbide, said first material being different from polycrystalline silicon carbide, the support semiconductor layer being deposited at least on the first face and on the lateral surface of the temporary substrate; - cutting the temporary substrate in a plane parallel to the plane of said temporary substrate so as to obtain a part of the temporary substrate, referred to as the reduced temporary substrate, covered with the semiconductor layer on its first face and on its lateral surface; - removing the reduced temporary substrate so as to obtain the carrier substrate formed by the support semiconductor layer previously deposited on the first face and on the lateral surface of the reduced temporary substrate, said carrier substrate comprising a base wall and a lateral wall extending from the base wall, the inner volume delimited by the base wall and the lateral wall being hollow.

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