Semiconductor structure and method for forming the same

Abstract

A semiconductor structure is provided. The semiconductor structure includes a first source / drain feature over a first fin element, a second source / drain feature over a second fin element and a first gate stack and a second gate stack across the first fin element and the second fin element. The semiconductor structure further includes a dielectric layer covering the second source / drain feature and the first source / drain feature, an isolation feature interposed between the first source / drain feature and the second source / drain feature, and between the first gate stack and the second gate stack. The semiconductor structure further includes a contact structure in the dielectric layer and electrically coupled to the first source / drain feature by way of a silicide layer.