Integrated circuit device and manufacturing method thereof

Abstract

An integrated circuit (IC) device includes a substrate having a front side and a back side opposite the front side along a thickness direction of the substrate, an active region over the front side of the substrate, a first doped region of a first dopant type over the active region, a second doped region of a second dopant type over the active region, and a back side via extending from the back side, through the substrate, to the front side, and in electrical contact with the first doped region. The second dopant type is different from the first dopant type. The first doped region and the second doped region configured as an anode and a cathode of a diode.