Semiconductor structure and bonded device structure and method of fabricating the same
TW202630966APending Publication Date: 2026-07-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-02-19
- Publication Date
- 2026-07-16
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Abstract
Bonded device structures and methods of fabrication thereof that provide improved uniformity of redistribution layer (RDL) pad surfaces. The RDL pads are formed by depositing (e.g., electroplating) a metal material on a semiconductor device structure, and performing a planarization process to provide discrete RDL pads having uniform, substantially flat upper surfaces with minimal differences in surface elevation. Passivation layer(s) and a bonding layer are formed over RDL pads, and bonding pad vias contact the upper surfaces of the RDL pads. The flatness of the RDL pads may be enhanced by providing dielectric-filled slots filled in at least some of the RDL pads and / or non-functional “dummy” RDL pads between functional RDL pads to mitigate non-uniformities during the planarization process. Improved uniformity and flatness of the RDL pads may enhance the reliability and performance of bonded device structures.
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